TY  - JOUR
AU  - Peruško, Davor
AU  - Cizmovic, M.
AU  - Petrović, Suzana
AU  - Siketic, Z.
AU  - Mitrić, Miodrag
AU  - Pelicon, P.
AU  - Dražić, Goran
AU  - Kovač, Janez
AU  - Milinović, Velimir
AU  - Milosavljević, Momir
PY  - 2013
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5457
AB  - Multilayered 5x(Al/Ti) structures, deposited on a Si substrate to a total thickness of 130 nm, were treated by unfocused Nd:YAG laser pulses (150 ps) with energies of 85 and 65 mJ. Irradiations were performed in air with 10, 50 and 100 successive laser pulses. Characterizations were done by using Rutherford backscattering spectrometry (RBS), elastic recoil detection analysis (ERDA), x-ray diffraction (XRD) and transmission electron microscopy (TEM). The results obtained show that laser irradiation, at either energy, induced almost full intermixing of deposited layers and formation of intermetallic compounds, but this was more pronounced for the applied laser pulses with a higher energy. The intermixed layer-silicon interface remains intact for all numbers of applied laser pulses and for both energies. The formation of an oxide layer on the sample surfaces was also observed, the thickness of which is greater for the higher laser beam energy.
T2  - Laser Physics
T1  - Laser irradiation of nano-metric Al/Ti multilayers
VL  - 23
IS  - 3
DO  - 10.1088/1054-660X/23/3/036005
ER  - 

@article{
author = "Peruško, Davor and Cizmovic, M. and Petrović, Suzana and Siketic, Z. and Mitrić, Miodrag and Pelicon, P. and Dražić, Goran and Kovač, Janez and Milinović, Velimir and Milosavljević, Momir",
year = "2013",
abstract = "Multilayered 5x(Al/Ti) structures, deposited on a Si substrate to a total thickness of 130 nm, were treated by unfocused Nd:YAG laser pulses (150 ps) with energies of 85 and 65 mJ. Irradiations were performed in air with 10, 50 and 100 successive laser pulses. Characterizations were done by using Rutherford backscattering spectrometry (RBS), elastic recoil detection analysis (ERDA), x-ray diffraction (XRD) and transmission electron microscopy (TEM). The results obtained show that laser irradiation, at either energy, induced almost full intermixing of deposited layers and formation of intermetallic compounds, but this was more pronounced for the applied laser pulses with a higher energy. The intermixed layer-silicon interface remains intact for all numbers of applied laser pulses and for both energies. The formation of an oxide layer on the sample surfaces was also observed, the thickness of which is greater for the higher laser beam energy.",
journal = "Laser Physics",
title = "Laser irradiation of nano-metric Al/Ti multilayers",
volume = "23",
number = "3",
doi = "10.1088/1054-660X/23/3/036005"
}

Peruško, D., Cizmovic, M., Petrović, S., Siketic, Z., Mitrić, M., Pelicon, P., Dražić, G., Kovač, J., Milinović, V.,& Milosavljević, M.. (2013). Laser irradiation of nano-metric Al/Ti multilayers. in Laser Physics, 23(3).
https://doi.org/10.1088/1054-660X/23/3/036005

Peruško D, Cizmovic M, Petrović S, Siketic Z, Mitrić M, Pelicon P, Dražić G, Kovač J, Milinović V, Milosavljević M. Laser irradiation of nano-metric Al/Ti multilayers. in Laser Physics. 2013;23(3).
doi:10.1088/1054-660X/23/3/036005 .

Peruško, Davor, Cizmovic, M., Petrović, Suzana, Siketic, Z., Mitrić, Miodrag, Pelicon, P., Dražić, Goran, Kovač, Janez, Milinović, Velimir, Milosavljević, Momir, "Laser irradiation of nano-metric Al/Ti multilayers" in Laser Physics, 23, no. 3 (2013),
https://doi.org/10.1088/1054-660X/23/3/036005 . .

TY  - JOUR
AU  - Milosavljević, Momir
AU  - Milinović, Velimir
AU  - Peruško, Davor
AU  - Grce, Ana
AU  - Stojanović, Mirjana
AU  - Pjević, Dejan J.
AU  - Mitrić, Miodrag
AU  - Kovač, Janez
AU  - Homewood, Kevin P.
PY  - 2011
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/4487
AB  - The effects of argon ion irradiation on structural changes in Ta/Ti multilayers deposited on Si wafers were investigated. The starting structures consisted of sputter deposited 10 alternate Ta (similar to 23 nm) and Ti (similar to 17 nm) layers of a total thickness similar to 200 nm. They were irradiated at room temperature with 200 key Ar(+), to the fluences from 5 x 10(15) to 2 x 10(16) ions/cm(2). The projected ion range was around mid-depth of the multilayered structure, and maximum displacements per atom similar to 130. It was found that, despite of the relatively heavy ion irradiation, individual nanocrystalline Ta and Ti layers remain unmixed, keeping the same level of interface planarity. The changes observed in the mostly affected region are increase in lateral dimensions of crystal grains in individual layers, and incorporation of bubbles and defects that cause some stretching of the crystal lattice. Absence of interlayer mixing is assigned to Ta-Ti immiscibility (reaction enthalpy Delta H(f) = +2 kJ/mol). It is estimated that up to similar to 5 at.% interface mixing induced directly by collision cascades could be compensated by dynamic demixing due to chemical driving forces in the temperature relaxation regime. The results can be interesting towards developing radiation tolerant materials based on multilayered structures. (C) 2011 Elsevier B.V. All rights reserved.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation
VL  - 269
IS  - 19
SP  - 2090
EP  - 2097
DO  - 10.1016/j.nimb.2011.06.017
ER  - 

@article{
author = "Milosavljević, Momir and Milinović, Velimir and Peruško, Davor and Grce, Ana and Stojanović, Mirjana and Pjević, Dejan J. and Mitrić, Miodrag and Kovač, Janez and Homewood, Kevin P.",
year = "2011",
abstract = "The effects of argon ion irradiation on structural changes in Ta/Ti multilayers deposited on Si wafers were investigated. The starting structures consisted of sputter deposited 10 alternate Ta (similar to 23 nm) and Ti (similar to 17 nm) layers of a total thickness similar to 200 nm. They were irradiated at room temperature with 200 key Ar(+), to the fluences from 5 x 10(15) to 2 x 10(16) ions/cm(2). The projected ion range was around mid-depth of the multilayered structure, and maximum displacements per atom similar to 130. It was found that, despite of the relatively heavy ion irradiation, individual nanocrystalline Ta and Ti layers remain unmixed, keeping the same level of interface planarity. The changes observed in the mostly affected region are increase in lateral dimensions of crystal grains in individual layers, and incorporation of bubbles and defects that cause some stretching of the crystal lattice. Absence of interlayer mixing is assigned to Ta-Ti immiscibility (reaction enthalpy Delta H(f) = +2 kJ/mol). It is estimated that up to similar to 5 at.% interface mixing induced directly by collision cascades could be compensated by dynamic demixing due to chemical driving forces in the temperature relaxation regime. The results can be interesting towards developing radiation tolerant materials based on multilayered structures. (C) 2011 Elsevier B.V. All rights reserved.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation",
volume = "269",
number = "19",
pages = "2090-2097",
doi = "10.1016/j.nimb.2011.06.017"
}

Milosavljević, M., Milinović, V., Peruško, D., Grce, A., Stojanović, M., Pjević, D. J., Mitrić, M., Kovač, J.,& Homewood, K. P.. (2011). Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 269(19), 2090-2097.
https://doi.org/10.1016/j.nimb.2011.06.017

Milosavljević M, Milinović V, Peruško D, Grce A, Stojanović M, Pjević DJ, Mitrić M, Kovač J, Homewood KP. Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2011;269(19):2090-2097.
doi:10.1016/j.nimb.2011.06.017 .

Milosavljević, Momir, Milinović, Velimir, Peruško, Davor, Grce, Ana, Stojanović, Mirjana, Pjević, Dejan J., Mitrić, Miodrag, Kovač, Janez, Homewood, Kevin P., "Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 269, no. 19 (2011):2090-2097,
https://doi.org/10.1016/j.nimb.2011.06.017 . .

TY  - JOUR
AU  - Petrović, Suzana
AU  - Peruško, Davor
AU  - Gaković, Biljana M.
AU  - Mitrić, Miodrag
AU  - Kovač, Janez
AU  - Zalar, A.
AU  - Milinović, Velimir
AU  - Bogdanović-Radović, Ivančica
AU  - Milosavljević, Momir
PY  - 2010
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6861
AB  - In this work we have studied the influence of thermal annealing on the structural and electrical properties of W-Ti thin films, deposited on n-type (100) silicon wafers. The films were deposited by d.c. sputtering from a 90:10 wt.%W-Ti target, using Ar ions, to a thickness of similar to 170 nm. After deposition the samples were annealed at 400 to 700 degrees C for 60 min, in a nitrogen ambient. Structural characterizations were performed by X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) and transmission electron microscopy (TEM). A four-point probe was used for electrical characterization. It was found that the as-deposited films exhibit a polycrystalline structure in the form of columnar grains (2050 nm in diameter). Only b.c.c. W phase could be registered in the films, while any presence of crystalline Ti was hindered in XRD and electron diffraction patterns. Annealing at up to 600 degrees C resulted in an increase of the mean grain size in the films, and a decrease of their sheet resistance. For these annealing temperatures we did not register any interaction at the W-Ti/Si interface. However. upon annealing at 700 degrees C, a progressed interaction between the film and the substrate occurred. Structural analyses suggest the formation of both W and Ti silicides. The estimated thickness of the formed metal-silicide layer is approximately 125 nm. Sheet resistance increased rapidly after annealing at 700 degrees C, because a large portion of the original metallic film was consumed in the reaction with silicon. (C) 2009 Elsevier B.V. All rights reserved.
T2  - Surface and Coatings Technology
T1  - Effects of thermal annealing on structural and electrical properties of sputtered W-Ti thin films
VL  - 204
IS  - 12-13
SP  - 2099
EP  - 2102
DO  - 10.1016/j.surfcoat.2009.09.048
ER  - 

@article{
author = "Petrović, Suzana and Peruško, Davor and Gaković, Biljana M. and Mitrić, Miodrag and Kovač, Janez and Zalar, A. and Milinović, Velimir and Bogdanović-Radović, Ivančica and Milosavljević, Momir",
year = "2010",
abstract = "In this work we have studied the influence of thermal annealing on the structural and electrical properties of W-Ti thin films, deposited on n-type (100) silicon wafers. The films were deposited by d.c. sputtering from a 90:10 wt.%W-Ti target, using Ar ions, to a thickness of similar to 170 nm. After deposition the samples were annealed at 400 to 700 degrees C for 60 min, in a nitrogen ambient. Structural characterizations were performed by X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) and transmission electron microscopy (TEM). A four-point probe was used for electrical characterization. It was found that the as-deposited films exhibit a polycrystalline structure in the form of columnar grains (2050 nm in diameter). Only b.c.c. W phase could be registered in the films, while any presence of crystalline Ti was hindered in XRD and electron diffraction patterns. Annealing at up to 600 degrees C resulted in an increase of the mean grain size in the films, and a decrease of their sheet resistance. For these annealing temperatures we did not register any interaction at the W-Ti/Si interface. However. upon annealing at 700 degrees C, a progressed interaction between the film and the substrate occurred. Structural analyses suggest the formation of both W and Ti silicides. The estimated thickness of the formed metal-silicide layer is approximately 125 nm. Sheet resistance increased rapidly after annealing at 700 degrees C, because a large portion of the original metallic film was consumed in the reaction with silicon. (C) 2009 Elsevier B.V. All rights reserved.",
journal = "Surface and Coatings Technology",
title = "Effects of thermal annealing on structural and electrical properties of sputtered W-Ti thin films",
volume = "204",
number = "12-13",
pages = "2099-2102",
doi = "10.1016/j.surfcoat.2009.09.048"
}

Petrović, S., Peruško, D., Gaković, B. M., Mitrić, M., Kovač, J., Zalar, A., Milinović, V., Bogdanović-Radović, I.,& Milosavljević, M.. (2010). Effects of thermal annealing on structural and electrical properties of sputtered W-Ti thin films. in Surface and Coatings Technology, 204(12-13), 2099-2102.
https://doi.org/10.1016/j.surfcoat.2009.09.048

Petrović S, Peruško D, Gaković BM, Mitrić M, Kovač J, Zalar A, Milinović V, Bogdanović-Radović I, Milosavljević M. Effects of thermal annealing on structural and electrical properties of sputtered W-Ti thin films. in Surface and Coatings Technology. 2010;204(12-13):2099-2102.
doi:10.1016/j.surfcoat.2009.09.048 .

Petrović, Suzana, Peruško, Davor, Gaković, Biljana M., Mitrić, Miodrag, Kovač, Janez, Zalar, A., Milinović, Velimir, Bogdanović-Radović, Ivančica, Milosavljević, Momir, "Effects of thermal annealing on structural and electrical properties of sputtered W-Ti thin films" in Surface and Coatings Technology, 204, no. 12-13 (2010):2099-2102,
https://doi.org/10.1016/j.surfcoat.2009.09.048 . .

TY  - JOUR
AU  - Milosavljević, Momir
AU  - Peruško, Davor
AU  - Milinović, Velimir
AU  - Stojanović, Zoran A.
AU  - Zalar, Anton
AU  - Kovač, Janez
AU  - Jeynes, Chris
PY  - 2010
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/3893
AB  - Structural changes in multilayered AlN/TiN nanocomposites upon Ar(+) ion irradiation were investigated. Reactive sputtering was used to deposit (AlN/TiN) x 5 multilayers on Si(1 0 0), to a total thickness of similar to 270 nm. Argon was implanted at 200 keV, to 5 x 10(15)-4 x 10(16) ions cm(-2). The as-deposited multilayers had a very fine columnar nanocrystalline structure, the width of individual grains was up to similar to 10 nm. It was found that this immiscible system exhibits a high ion radiation stability, the AlN and TiN layers remaining well separated, with sharp interfaces. Ion irradiation induced small local density changes and only a slight increase in individual grains, in the region where most damage was deposited by the impact ions. For the highest irradiation fluence there was also some migration of Ti into AlN in this region, which was assigned to excess nitrogen within the AlN layers. Due to these small structural changes, ion irradiation enhanced the mechanical strength of the multilayered nanocomposites.
T2  - Journal of Physics. D: Applied Physics
T1  - Ion irradiation stability of multilayered AlN/TiN nanocomposites
VL  - 43
IS  - 6
DO  - 10.1088/0022-3727/43/6/065302
ER  - 

@article{
author = "Milosavljević, Momir and Peruško, Davor and Milinović, Velimir and Stojanović, Zoran A. and Zalar, Anton and Kovač, Janez and Jeynes, Chris",
year = "2010",
abstract = "Structural changes in multilayered AlN/TiN nanocomposites upon Ar(+) ion irradiation were investigated. Reactive sputtering was used to deposit (AlN/TiN) x 5 multilayers on Si(1 0 0), to a total thickness of similar to 270 nm. Argon was implanted at 200 keV, to 5 x 10(15)-4 x 10(16) ions cm(-2). The as-deposited multilayers had a very fine columnar nanocrystalline structure, the width of individual grains was up to similar to 10 nm. It was found that this immiscible system exhibits a high ion radiation stability, the AlN and TiN layers remaining well separated, with sharp interfaces. Ion irradiation induced small local density changes and only a slight increase in individual grains, in the region where most damage was deposited by the impact ions. For the highest irradiation fluence there was also some migration of Ti into AlN in this region, which was assigned to excess nitrogen within the AlN layers. Due to these small structural changes, ion irradiation enhanced the mechanical strength of the multilayered nanocomposites.",
journal = "Journal of Physics. D: Applied Physics",
title = "Ion irradiation stability of multilayered AlN/TiN nanocomposites",
volume = "43",
number = "6",
doi = "10.1088/0022-3727/43/6/065302"
}

Milosavljević, M., Peruško, D., Milinović, V., Stojanović, Z. A., Zalar, A., Kovač, J.,& Jeynes, C.. (2010). Ion irradiation stability of multilayered AlN/TiN nanocomposites. in Journal of Physics. D: Applied Physics, 43(6).
https://doi.org/10.1088/0022-3727/43/6/065302

Milosavljević M, Peruško D, Milinović V, Stojanović ZA, Zalar A, Kovač J, Jeynes C. Ion irradiation stability of multilayered AlN/TiN nanocomposites. in Journal of Physics. D: Applied Physics. 2010;43(6).
doi:10.1088/0022-3727/43/6/065302 .

Milosavljević, Momir, Peruško, Davor, Milinović, Velimir, Stojanović, Zoran A., Zalar, Anton, Kovač, Janez, Jeynes, Chris, "Ion irradiation stability of multilayered AlN/TiN nanocomposites" in Journal of Physics. D: Applied Physics, 43, no. 6 (2010),
https://doi.org/10.1088/0022-3727/43/6/065302 . .

TY  - JOUR
AU  - Peruško, Davor
AU  - Milinović, Velimir
AU  - Mitrić, Miodrag
AU  - Petrović, Suzana
AU  - Jeynes, C.
AU  - Milosavljević, Momir
PY  - 2009
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/3905
AB  - Aluminum/titanium multilayers were sputter deposited on (100) Si wafers and irradiated with 200keV Ar(+) and N(2)(+) ions. Irradiation fluences were in the range from 5 . 10(15) to 4 . 10(16) ions cm(-2), for argon ions, and 1 . 10(17) to 2 . 10(17) ions cm(-2) for nitrogen. The samples were analyzed by Rutherford backscattering spectroscopy (RBS), transmission electron microscopy (TEM), and X-ray diffraction (XRD). Nano-hardness measurements were performed by Vickers method. Irradiation with argon ions induces mixing between Ti and Al layers, which is most pronounced in the vicinity of the projected range of implanted species. TEM cross-section analysis shows significant growth of grain size with the increase of Ar ion fluence. Implantation with nitrogen ions, up to these high fluences, causes a full intermixing of Al/Ti layers, resulting in multilayered structures with different content of Al, Ti, and N. In the latter case, nitrogen ion irradiation, probably, induces the formation of nitrides of titanium, aluminum, and AlTi. Nano-hardness measurements show significant increase of hardness for all applied ion fluences.
T2  - Materials and Manufacturing Processes
T1  - Ion Beam Modification of Al/Ti Multilayers
VL  - 24
IS  - 10-11
SP  - 1130
EP  - 1133
DO  - 10.1080/10426910903032246
ER  - 

@article{
author = "Peruško, Davor and Milinović, Velimir and Mitrić, Miodrag and Petrović, Suzana and Jeynes, C. and Milosavljević, Momir",
year = "2009",
abstract = "Aluminum/titanium multilayers were sputter deposited on (100) Si wafers and irradiated with 200keV Ar(+) and N(2)(+) ions. Irradiation fluences were in the range from 5 . 10(15) to 4 . 10(16) ions cm(-2), for argon ions, and 1 . 10(17) to 2 . 10(17) ions cm(-2) for nitrogen. The samples were analyzed by Rutherford backscattering spectroscopy (RBS), transmission electron microscopy (TEM), and X-ray diffraction (XRD). Nano-hardness measurements were performed by Vickers method. Irradiation with argon ions induces mixing between Ti and Al layers, which is most pronounced in the vicinity of the projected range of implanted species. TEM cross-section analysis shows significant growth of grain size with the increase of Ar ion fluence. Implantation with nitrogen ions, up to these high fluences, causes a full intermixing of Al/Ti layers, resulting in multilayered structures with different content of Al, Ti, and N. In the latter case, nitrogen ion irradiation, probably, induces the formation of nitrides of titanium, aluminum, and AlTi. Nano-hardness measurements show significant increase of hardness for all applied ion fluences.",
journal = "Materials and Manufacturing Processes",
title = "Ion Beam Modification of Al/Ti Multilayers",
volume = "24",
number = "10-11",
pages = "1130-1133",
doi = "10.1080/10426910903032246"
}

Peruško, D., Milinović, V., Mitrić, M., Petrović, S., Jeynes, C.,& Milosavljević, M.. (2009). Ion Beam Modification of Al/Ti Multilayers. in Materials and Manufacturing Processes, 24(10-11), 1130-1133.
https://doi.org/10.1080/10426910903032246

Peruško D, Milinović V, Mitrić M, Petrović S, Jeynes C, Milosavljević M. Ion Beam Modification of Al/Ti Multilayers. in Materials and Manufacturing Processes. 2009;24(10-11):1130-1133.
doi:10.1080/10426910903032246 .

Peruško, Davor, Milinović, Velimir, Mitrić, Miodrag, Petrović, Suzana, Jeynes, C., Milosavljević, Momir, "Ion Beam Modification of Al/Ti Multilayers" in Materials and Manufacturing Processes, 24, no. 10-11 (2009):1130-1133,
https://doi.org/10.1080/10426910903032246 . .

TY  - JOUR
AU  - Peruško, Davor
AU  - Mitrić, Miodrag
AU  - Milinović, Velimir
AU  - Petrović, Suzana
AU  - Milosavljević, Momir
PY  - 2008
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/3388
AB  - We have studied the effects of nitrogen pre-implantation of AISI C1045 steel substrates on the microstructure and microhardness of deposited TiN coatings. The substrates were implanted at 40 keV, to the fluences from 5 x 10(16) to 5 x 10(17) ions/cm(2), which was followed by deposition of 1.3-mu m thick TiN coatings by reactive sputtering. Structural characterization of the samples was performed by standard and grazing incidence X-ray diffraction analysis, Rutherford backscattering spectroscopy and transmission electron microscopy. Microhardness was measured by the Vickers method. Nitrogen implantation up to 2 x 10(17) ions/cm(2) induces the formation of Fe(2)N phase in the near surface region of the substrates, which becomes more pronounced for higher fluences. Microstructure of the deposited TiN coatings shows a strong dependence on ion beam pre-treatment of the substrates. The layers grown on non-implanted substrates have a (200) TiN preferential orientation, and those grown on implanted substrates have (111) TiN preferential orientation. The change in preferred orientation of the layers is assigned to a developed surface topography of the substrates induced by ion implantation, and possible effects of distorted and altered crystalline structure at the surface. Ion implantation and deposition of TiN coatings induce an increase of microhardness of this low performance steel for more than eight times.
T2  - Journal of Materials Science
T1  - The effects of pre-implantation of steel substrates on the structural properties of TiN coatings
VL  - 43
IS  - 8
SP  - 2625
EP  - 2630
DO  - 10.1007/s10853-008-2477-5
ER  - 

@article{
author = "Peruško, Davor and Mitrić, Miodrag and Milinović, Velimir and Petrović, Suzana and Milosavljević, Momir",
year = "2008",
abstract = "We have studied the effects of nitrogen pre-implantation of AISI C1045 steel substrates on the microstructure and microhardness of deposited TiN coatings. The substrates were implanted at 40 keV, to the fluences from 5 x 10(16) to 5 x 10(17) ions/cm(2), which was followed by deposition of 1.3-mu m thick TiN coatings by reactive sputtering. Structural characterization of the samples was performed by standard and grazing incidence X-ray diffraction analysis, Rutherford backscattering spectroscopy and transmission electron microscopy. Microhardness was measured by the Vickers method. Nitrogen implantation up to 2 x 10(17) ions/cm(2) induces the formation of Fe(2)N phase in the near surface region of the substrates, which becomes more pronounced for higher fluences. Microstructure of the deposited TiN coatings shows a strong dependence on ion beam pre-treatment of the substrates. The layers grown on non-implanted substrates have a (200) TiN preferential orientation, and those grown on implanted substrates have (111) TiN preferential orientation. The change in preferred orientation of the layers is assigned to a developed surface topography of the substrates induced by ion implantation, and possible effects of distorted and altered crystalline structure at the surface. Ion implantation and deposition of TiN coatings induce an increase of microhardness of this low performance steel for more than eight times.",
journal = "Journal of Materials Science",
title = "The effects of pre-implantation of steel substrates on the structural properties of TiN coatings",
volume = "43",
number = "8",
pages = "2625-2630",
doi = "10.1007/s10853-008-2477-5"
}

Peruško, D., Mitrić, M., Milinović, V., Petrović, S.,& Milosavljević, M.. (2008). The effects of pre-implantation of steel substrates on the structural properties of TiN coatings. in Journal of Materials Science, 43(8), 2625-2630.
https://doi.org/10.1007/s10853-008-2477-5

Peruško D, Mitrić M, Milinović V, Petrović S, Milosavljević M. The effects of pre-implantation of steel substrates on the structural properties of TiN coatings. in Journal of Materials Science. 2008;43(8):2625-2630.
doi:10.1007/s10853-008-2477-5 .

Peruško, Davor, Mitrić, Miodrag, Milinović, Velimir, Petrović, Suzana, Milosavljević, Momir, "The effects of pre-implantation of steel substrates on the structural properties of TiN coatings" in Journal of Materials Science, 43, no. 8 (2008):2625-2630,
https://doi.org/10.1007/s10853-008-2477-5 . .

TY  - JOUR
AU  - Bibić, Nataša M.
AU  - Milinović, Velimir
AU  - Milosavljević, Momir
AU  - Schrempel, F.
AU  - Šiljegović, Milorad
AU  - Lieb, K. P.
PY  - 2008
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/3575
AB  - Ion beam mixing of Fe/Si bilayers, induced by 100 keV (40)Arions at room temperature was investigated. Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were applied for structural characterization. The main focus of this study was on the influence of the substrate structure on interface mixing. The influence of the substrate structure is due to the two classes of irradiated bilayers, Fe thin films deposited on crystalline or pre-amorphized Si substrates. An about 76% higher efficiency of atomic transport across the pre-amorphized Fe/a-Si interface as compared to that of Fe/c-Si bilayers was observed.
T2  - Journal of Microscopy, Oxford
T1  - Effects of the Ar ions pre-amorphization of Si substrateon interface mixing of Fe/Si bilayers
VL  - 232
IS  - 3
SP  - 539
EP  - 541
DO  - 10.1111/j.1365-2818.2008.02143.x
ER  - 

@article{
author = "Bibić, Nataša M. and Milinović, Velimir and Milosavljević, Momir and Schrempel, F. and Šiljegović, Milorad and Lieb, K. P.",
year = "2008",
abstract = "Ion beam mixing of Fe/Si bilayers, induced by 100 keV (40)Arions at room temperature was investigated. Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were applied for structural characterization. The main focus of this study was on the influence of the substrate structure on interface mixing. The influence of the substrate structure is due to the two classes of irradiated bilayers, Fe thin films deposited on crystalline or pre-amorphized Si substrates. An about 76% higher efficiency of atomic transport across the pre-amorphized Fe/a-Si interface as compared to that of Fe/c-Si bilayers was observed.",
journal = "Journal of Microscopy, Oxford",
title = "Effects of the Ar ions pre-amorphization of Si substrateon interface mixing of Fe/Si bilayers",
volume = "232",
number = "3",
pages = "539-541",
doi = "10.1111/j.1365-2818.2008.02143.x"
}

Bibić, N. M., Milinović, V., Milosavljević, M., Schrempel, F., Šiljegović, M.,& Lieb, K. P.. (2008). Effects of the Ar ions pre-amorphization of Si substrateon interface mixing of Fe/Si bilayers. in Journal of Microscopy, Oxford, 232(3), 539-541.
https://doi.org/10.1111/j.1365-2818.2008.02143.x

Bibić NM, Milinović V, Milosavljević M, Schrempel F, Šiljegović M, Lieb KP. Effects of the Ar ions pre-amorphization of Si substrateon interface mixing of Fe/Si bilayers. in Journal of Microscopy, Oxford. 2008;232(3):539-541.
doi:10.1111/j.1365-2818.2008.02143.x .

Bibić, Nataša M., Milinović, Velimir, Milosavljević, Momir, Schrempel, F., Šiljegović, Milorad, Lieb, K. P., "Effects of the Ar ions pre-amorphization of Si substrateon interface mixing of Fe/Si bilayers" in Journal of Microscopy, Oxford, 232, no. 3 (2008):539-541,
https://doi.org/10.1111/j.1365-2818.2008.02143.x . .

TY  - JOUR
AU  - Peruško, Davor
AU  - Webb, M. J.
AU  - Milinović, Velimir
AU  - Timotijević, B.
AU  - Miosavljevic, M.
AU  - Jeynes, C.
AU  - Webb, R. P.
PY  - 2008
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6762
AB  - A comparative study of the structural changes induced in Al/Ti and AlN/TiN multilayers by argon ion irradiation is presented. The layers were deposited on Si substrates, by ion sputtering in case of pure metals, and reactive ion sputtering in case of metal-nitrides, to a total thickness of similar to 270 nm. The multilayered structures consisted of 10 alternative similar to 27 nm layers of each component. For ion irradiation, we used 200 keV Ar+ ions having a projected range around mid-depth of the multilayered structures. Implantations were performed at room temperature, to the fluences from 5 x 10(15) to 4 x 10(16) ions/cm(2). Structural characterization included Rutherford backscattering analysis and transmission electron microscopy. The obtained results demonstrate that AlN/TiN multilayered system exhibits a much higher irradiation stability compared to the Al/Ti system. In Al/Ti multilayers, we observe a progressed intermixing with increasing the ion fluence, the behavior being closer to the ballistic than to the thermal spike model. In AlN/TiN system, no interface mixing was registered for any of the applied irradiation fluencies. Different behavior compared to Al/Ti system is assigned to immiscibility of AlN and TiN. (C) 2008 Elsevier B.V. All rights reserved.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - On the ion irradiation stability of Al/Ti versus AlN/TiN multilayers
VL  - 266
IS  - 8
SP  - 1749
EP  - 1753
DO  - 10.1016/j.nimb.2008.02.034
ER  - 

@article{
author = "Peruško, Davor and Webb, M. J. and Milinović, Velimir and Timotijević, B. and Miosavljevic, M. and Jeynes, C. and Webb, R. P.",
year = "2008",
abstract = "A comparative study of the structural changes induced in Al/Ti and AlN/TiN multilayers by argon ion irradiation is presented. The layers were deposited on Si substrates, by ion sputtering in case of pure metals, and reactive ion sputtering in case of metal-nitrides, to a total thickness of similar to 270 nm. The multilayered structures consisted of 10 alternative similar to 27 nm layers of each component. For ion irradiation, we used 200 keV Ar+ ions having a projected range around mid-depth of the multilayered structures. Implantations were performed at room temperature, to the fluences from 5 x 10(15) to 4 x 10(16) ions/cm(2). Structural characterization included Rutherford backscattering analysis and transmission electron microscopy. The obtained results demonstrate that AlN/TiN multilayered system exhibits a much higher irradiation stability compared to the Al/Ti system. In Al/Ti multilayers, we observe a progressed intermixing with increasing the ion fluence, the behavior being closer to the ballistic than to the thermal spike model. In AlN/TiN system, no interface mixing was registered for any of the applied irradiation fluencies. Different behavior compared to Al/Ti system is assigned to immiscibility of AlN and TiN. (C) 2008 Elsevier B.V. All rights reserved.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "On the ion irradiation stability of Al/Ti versus AlN/TiN multilayers",
volume = "266",
number = "8",
pages = "1749-1753",
doi = "10.1016/j.nimb.2008.02.034"
}

Peruško, D., Webb, M. J., Milinović, V., Timotijević, B., Miosavljevic, M., Jeynes, C.,& Webb, R. P.. (2008). On the ion irradiation stability of Al/Ti versus AlN/TiN multilayers. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 266(8), 1749-1753.
https://doi.org/10.1016/j.nimb.2008.02.034

Peruško D, Webb MJ, Milinović V, Timotijević B, Miosavljevic M, Jeynes C, Webb RP. On the ion irradiation stability of Al/Ti versus AlN/TiN multilayers. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2008;266(8):1749-1753.
doi:10.1016/j.nimb.2008.02.034 .

Peruško, Davor, Webb, M. J., Milinović, Velimir, Timotijević, B., Miosavljevic, M., Jeynes, C., Webb, R. P., "On the ion irradiation stability of Al/Ti versus AlN/TiN multilayers" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 266, no. 8 (2008):1749-1753,
https://doi.org/10.1016/j.nimb.2008.02.034 . .

TY  - JOUR
AU  - Bibić, Nataša M.
AU  - Lieb, K. P.
AU  - Milinović, Velimir
AU  - Mitrić, Miodrag
AU  - Šiljegović, Milorad
AU  - Zhang, Kun
PY  - 2008
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6767
AB  - Heavy-ion irradiation of ferromagnetic thin layers changes their micromagnetic and microstructural properties, due to the production of defects, relaxation or build-up of stress, or changes of grain size. When the ion range exceeds the layer thickness, ion mixing processes take place, leading to the formation of silicide phases. The present study deals with CO(30 or 55 nm)/Si bilayers irradiated at room temperature with 100- or 200 keV Xe ions to fluences of up to 15 x 10(15)/cm(2). The Si(100) wafers were either crystalline or pre-amorphized by 1 keV Ar+ implantation. Rutherford backscattering spectroscopy, in-plane magneto-optical Kerr effect, and X-ray diffraction served to analyse the samples before and after irradiation. The results will be compared with those obtained for other heavy-ions for Co/Si bilayers and in similar studies on Fe/Si bilayers. (C) 2008 Elsevier B.V. All rights reserved.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Xenon-ion irradiation of Co/Si bilayers: Effects of interface structure and ion energy
VL  - 266
IS  - 10
SP  - 2498
EP  - 2502
DO  - 10.1016/j.nimb.2008.03.033
ER  - 

@article{
author = "Bibić, Nataša M. and Lieb, K. P. and Milinović, Velimir and Mitrić, Miodrag and Šiljegović, Milorad and Zhang, Kun",
year = "2008",
abstract = "Heavy-ion irradiation of ferromagnetic thin layers changes their micromagnetic and microstructural properties, due to the production of defects, relaxation or build-up of stress, or changes of grain size. When the ion range exceeds the layer thickness, ion mixing processes take place, leading to the formation of silicide phases. The present study deals with CO(30 or 55 nm)/Si bilayers irradiated at room temperature with 100- or 200 keV Xe ions to fluences of up to 15 x 10(15)/cm(2). The Si(100) wafers were either crystalline or pre-amorphized by 1 keV Ar+ implantation. Rutherford backscattering spectroscopy, in-plane magneto-optical Kerr effect, and X-ray diffraction served to analyse the samples before and after irradiation. The results will be compared with those obtained for other heavy-ions for Co/Si bilayers and in similar studies on Fe/Si bilayers. (C) 2008 Elsevier B.V. All rights reserved.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Xenon-ion irradiation of Co/Si bilayers: Effects of interface structure and ion energy",
volume = "266",
number = "10",
pages = "2498-2502",
doi = "10.1016/j.nimb.2008.03.033"
}

Bibić, N. M., Lieb, K. P., Milinović, V., Mitrić, M., Šiljegović, M.,& Zhang, K.. (2008). Xenon-ion irradiation of Co/Si bilayers: Effects of interface structure and ion energy. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 266(10), 2498-2502.
https://doi.org/10.1016/j.nimb.2008.03.033

Bibić NM, Lieb KP, Milinović V, Mitrić M, Šiljegović M, Zhang K. Xenon-ion irradiation of Co/Si bilayers: Effects of interface structure and ion energy. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2008;266(10):2498-2502.
doi:10.1016/j.nimb.2008.03.033 .

Bibić, Nataša M., Lieb, K. P., Milinović, Velimir, Mitrić, Miodrag, Šiljegović, Milorad, Zhang, Kun, "Xenon-ion irradiation of Co/Si bilayers: Effects of interface structure and ion energy" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 266, no. 10 (2008):2498-2502,
https://doi.org/10.1016/j.nimb.2008.03.033 . .

TY  - JOUR
AU  - Peruško, Davor
AU  - Milosavljević, Momir
AU  - Milinović, Velimir
AU  - Timotijević, B.
AU  - Zalar, A.
AU  - Kovač, Janez
AU  - Pracek, B.
AU  - Jeynes, C.
PY  - 2008
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6768
AB  - We have studied the effects of high fluence nitrogen ion implantation on the structural changes in Al/Ti multilayers, with the aim of achieving multilayered metal-nitrides. The starting structures consisted of 10 alternate sputter-deposited Al and Ti films, with a total thickness of 270 nm, on (100) Si substrates. They were implanted with 200 keV N-2(+), to 1 x 10(17) and 2 x 10(17) at/cm(2), the projected range being around half-depth of the multilayers. Structural characterization was performed by Rutherford backscattering, Auger electron spectroscopy and transmission electron microscopy. It was found that ion implantation to the higher fluence induces a full intermixing of Al/Ti layers, resulting in a multilayered structure with different content of Al, Ti and N. The applied method can be interesting for preparation of graded (AI,Ti)N multilayers, with a controlled content of nitrogen and a controlled level of Al-Ti intermixing within the structures. (C) 2008 Elsevier B.V. All rights reserved.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - High fluence nitrogen implantation in Al/Ti multilayers
VL  - 266
IS  - 10
SP  - 2503
EP  - 2506
DO  - 10.1016/j.nimb.2008.03.034
ER  - 

@article{
author = "Peruško, Davor and Milosavljević, Momir and Milinović, Velimir and Timotijević, B. and Zalar, A. and Kovač, Janez and Pracek, B. and Jeynes, C.",
year = "2008",
abstract = "We have studied the effects of high fluence nitrogen ion implantation on the structural changes in Al/Ti multilayers, with the aim of achieving multilayered metal-nitrides. The starting structures consisted of 10 alternate sputter-deposited Al and Ti films, with a total thickness of 270 nm, on (100) Si substrates. They were implanted with 200 keV N-2(+), to 1 x 10(17) and 2 x 10(17) at/cm(2), the projected range being around half-depth of the multilayers. Structural characterization was performed by Rutherford backscattering, Auger electron spectroscopy and transmission electron microscopy. It was found that ion implantation to the higher fluence induces a full intermixing of Al/Ti layers, resulting in a multilayered structure with different content of Al, Ti and N. The applied method can be interesting for preparation of graded (AI,Ti)N multilayers, with a controlled content of nitrogen and a controlled level of Al-Ti intermixing within the structures. (C) 2008 Elsevier B.V. All rights reserved.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "High fluence nitrogen implantation in Al/Ti multilayers",
volume = "266",
number = "10",
pages = "2503-2506",
doi = "10.1016/j.nimb.2008.03.034"
}

Peruško, D., Milosavljević, M., Milinović, V., Timotijević, B., Zalar, A., Kovač, J., Pracek, B.,& Jeynes, C.. (2008). High fluence nitrogen implantation in Al/Ti multilayers. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 266(10), 2503-2506.
https://doi.org/10.1016/j.nimb.2008.03.034

Peruško D, Milosavljević M, Milinović V, Timotijević B, Zalar A, Kovač J, Pracek B, Jeynes C. High fluence nitrogen implantation in Al/Ti multilayers. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2008;266(10):2503-2506.
doi:10.1016/j.nimb.2008.03.034 .

Peruško, Davor, Milosavljević, Momir, Milinović, Velimir, Timotijević, B., Zalar, A., Kovač, Janez, Pracek, B., Jeynes, C., "High fluence nitrogen implantation in Al/Ti multilayers" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 266, no. 10 (2008):2503-2506,
https://doi.org/10.1016/j.nimb.2008.03.034 . .

TY  - JOUR
AU  - Popović, Maja
AU  - Stojanović, Milan
AU  - Peruško, Davor
AU  - Novaković, Mirjana M.
AU  - Radović, Ivan
AU  - Milinović, Velimir
AU  - Timotijević, B.
AU  - Mitrić, Miodrag
AU  - Milosavljević, Momir
PY  - 2008
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6769
AB  - A study of ion beam modification of structural and electrical properties of TiN thin films is presented. The layers were deposited by reactive ion sputtering on (100) Si and glass slide substrates to a thickness of similar to 240 nm. After deposition the structures were implanted with argon ions at 120 keV, to the fluences from 1 x 10(15) to 1 x 10(16) ions/cm(2). The ion energy was chosen to give the projected ion range within the deposited layers, to minimize the influence of the substrate on the induced structural changes. Structural analysis of the samples was performed by cross-sectional transmission electron microscopy, X-ray diffraction and Rutherford backscattering spectrometry. Electrical characterization included sheet resistivity measurements with a four point probe. It was found that the as-deposited layers have columnar structure, individual columns stretching from the substrate to the surface and being a few tens of nanometers wide.Ion irradiation rearranges their crystalline structure, which remains polycrystalline, but the columns are broken, and nanocrystals of the same phase are formed. The structural changes can be nicely correlated to the measured electrical resistivity. (C) 2008 Elsevier B.V. All rights reserved.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Ion beam modification of structural and electrical properties of TiN thin films
VL  - 266
IS  - 10
SP  - 2507
EP  - 2510
DO  - 10.1016/j.nimb.2008.03.032
ER  - 

@article{
author = "Popović, Maja and Stojanović, Milan and Peruško, Davor and Novaković, Mirjana M. and Radović, Ivan and Milinović, Velimir and Timotijević, B. and Mitrić, Miodrag and Milosavljević, Momir",
year = "2008",
abstract = "A study of ion beam modification of structural and electrical properties of TiN thin films is presented. The layers were deposited by reactive ion sputtering on (100) Si and glass slide substrates to a thickness of similar to 240 nm. After deposition the structures were implanted with argon ions at 120 keV, to the fluences from 1 x 10(15) to 1 x 10(16) ions/cm(2). The ion energy was chosen to give the projected ion range within the deposited layers, to minimize the influence of the substrate on the induced structural changes. Structural analysis of the samples was performed by cross-sectional transmission electron microscopy, X-ray diffraction and Rutherford backscattering spectrometry. Electrical characterization included sheet resistivity measurements with a four point probe. It was found that the as-deposited layers have columnar structure, individual columns stretching from the substrate to the surface and being a few tens of nanometers wide.Ion irradiation rearranges their crystalline structure, which remains polycrystalline, but the columns are broken, and nanocrystals of the same phase are formed. The structural changes can be nicely correlated to the measured electrical resistivity. (C) 2008 Elsevier B.V. All rights reserved.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Ion beam modification of structural and electrical properties of TiN thin films",
volume = "266",
number = "10",
pages = "2507-2510",
doi = "10.1016/j.nimb.2008.03.032"
}

Popović, M., Stojanović, M., Peruško, D., Novaković, M. M., Radović, I., Milinović, V., Timotijević, B., Mitrić, M.,& Milosavljević, M.. (2008). Ion beam modification of structural and electrical properties of TiN thin films. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 266(10), 2507-2510.
https://doi.org/10.1016/j.nimb.2008.03.032

Popović M, Stojanović M, Peruško D, Novaković MM, Radović I, Milinović V, Timotijević B, Mitrić M, Milosavljević M. Ion beam modification of structural and electrical properties of TiN thin films. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2008;266(10):2507-2510.
doi:10.1016/j.nimb.2008.03.032 .

Popović, Maja, Stojanović, Milan, Peruško, Davor, Novaković, Mirjana M., Radović, Ivan, Milinović, Velimir, Timotijević, B., Mitrić, Miodrag, Milosavljević, Momir, "Ion beam modification of structural and electrical properties of TiN thin films" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 266, no. 10 (2008):2507-2510,
https://doi.org/10.1016/j.nimb.2008.03.032 . .

TY  - CONF
AU  - Novaković, Mirjana M.
AU  - Popović, Maja
AU  - Milosavljević, Momir
AU  - Peruško, Davor
AU  - Milinović, Velimir
AU  - Radović, Ivan
AU  - Bibić, Nataša M.
PY  - 2008
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6827
AB  - This paper presents a study of the structure and composition of Cr-N thin films as a function of deposition parameters and ion irradiation. Thin films were deposited by reactive ion sputtering on (100) Si substrates, to a thickness of 240-280 nm, at different nitrogen partial pressures. After deposition the samples were irradiated with 120 keV argon ions, to the fluences of 1 x 10(15) and 1 x 10(16) ions/cm(2). Structural characterization of the samples was performed by Rutherford backscattering spectrometry, x-ray diffraction and cross-sectional transmission electron microscopy. It was found that the film composition, Cr2N or CrN, strongly depends on the nitrogen partial pressure during deposition. Ion irradiation induces local microstructural changes, formation of nanoparticles mid defects.
C3  - Publications of the Astronomical Observatory of Belgrade
T1  - Microstructural Changes of Chromium-Nitride Thin Films Induced By Argon Ion Implantation
IS  - 84
SP  - 201
EP  - 204
UR  - https://hdl.handle.net/21.15107/rcub_vinar_6827
ER  - 

@conference{
author = "Novaković, Mirjana M. and Popović, Maja and Milosavljević, Momir and Peruško, Davor and Milinović, Velimir and Radović, Ivan and Bibić, Nataša M.",
year = "2008",
abstract = "This paper presents a study of the structure and composition of Cr-N thin films as a function of deposition parameters and ion irradiation. Thin films were deposited by reactive ion sputtering on (100) Si substrates, to a thickness of 240-280 nm, at different nitrogen partial pressures. After deposition the samples were irradiated with 120 keV argon ions, to the fluences of 1 x 10(15) and 1 x 10(16) ions/cm(2). Structural characterization of the samples was performed by Rutherford backscattering spectrometry, x-ray diffraction and cross-sectional transmission electron microscopy. It was found that the film composition, Cr2N or CrN, strongly depends on the nitrogen partial pressure during deposition. Ion irradiation induces local microstructural changes, formation of nanoparticles mid defects.",
journal = "Publications of the Astronomical Observatory of Belgrade",
title = "Microstructural Changes of Chromium-Nitride Thin Films Induced By Argon Ion Implantation",
number = "84",
pages = "201-204",
url = "https://hdl.handle.net/21.15107/rcub_vinar_6827"
}

Novaković, M. M., Popović, M., Milosavljević, M., Peruško, D., Milinović, V., Radović, I.,& Bibić, N. M.. (2008). Microstructural Changes of Chromium-Nitride Thin Films Induced By Argon Ion Implantation. in Publications of the Astronomical Observatory of Belgrade(84), 201-204.
https://hdl.handle.net/21.15107/rcub_vinar_6827

Novaković MM, Popović M, Milosavljević M, Peruško D, Milinović V, Radović I, Bibić NM. Microstructural Changes of Chromium-Nitride Thin Films Induced By Argon Ion Implantation. in Publications of the Astronomical Observatory of Belgrade. 2008;(84):201-204.
https://hdl.handle.net/21.15107/rcub_vinar_6827 .

Novaković, Mirjana M., Popović, Maja, Milosavljević, Momir, Peruško, Davor, Milinović, Velimir, Radović, Ivan, Bibić, Nataša M., "Microstructural Changes of Chromium-Nitride Thin Films Induced By Argon Ion Implantation" in Publications of the Astronomical Observatory of Belgrade, no. 84 (2008):201-204,
https://hdl.handle.net/21.15107/rcub_vinar_6827 .

TY  - CONF
AU  - Popović, Maja
AU  - Novaković, Mirjana
AU  - Milosavljević, Momir
AU  - Peruško, Davor
AU  - Milinović, Velimir
AU  - Radović, Ivan
AU  - Bibić, Nataša M.
PY  - 2008
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6828
AB  - A study of ion beam modification of structural and electrical properties of TiN thin films is presented. The layers, were deposited by reactive ion sputtering on (100) Si substrates to a thickness of similar to 240 nm. After deposition the structures were implanted with argon ions at 120 keV, to the fluences from 1 x 10(15) - 1 x 10(16) ions/cm(2). Structural analysis of the samples was performed by cross-sectional transmission electron microscopy, x-ray diffraction and Rutherford backscattering spectrometry. It was found that the as-deposited layers have a columnar structure, individual columns stretching from the substrate to the surface and being a few tells of nanometers wide. Ion irradiation rearranges their crystalline structure, which remains polycrystalline, but the columns are broken, and nanocrystals of the same phase are formed.
C3  - Publications of the Astronomical Observatory of Belgrade
T1  - Ion Beam Modification of Reactively Sputtered TiN Thin Films
IS  - 84
SP  - 205
EP  - 208
UR  - https://hdl.handle.net/21.15107/rcub_vinar_6828
ER  - 

@conference{
author = "Popović, Maja and Novaković, Mirjana and Milosavljević, Momir and Peruško, Davor and Milinović, Velimir and Radović, Ivan and Bibić, Nataša M.",
year = "2008",
abstract = "A study of ion beam modification of structural and electrical properties of TiN thin films is presented. The layers, were deposited by reactive ion sputtering on (100) Si substrates to a thickness of similar to 240 nm. After deposition the structures were implanted with argon ions at 120 keV, to the fluences from 1 x 10(15) - 1 x 10(16) ions/cm(2). Structural analysis of the samples was performed by cross-sectional transmission electron microscopy, x-ray diffraction and Rutherford backscattering spectrometry. It was found that the as-deposited layers have a columnar structure, individual columns stretching from the substrate to the surface and being a few tells of nanometers wide. Ion irradiation rearranges their crystalline structure, which remains polycrystalline, but the columns are broken, and nanocrystals of the same phase are formed.",
journal = "Publications of the Astronomical Observatory of Belgrade",
title = "Ion Beam Modification of Reactively Sputtered TiN Thin Films",
number = "84",
pages = "205-208",
url = "https://hdl.handle.net/21.15107/rcub_vinar_6828"
}

Popović, M., Novaković, M., Milosavljević, M., Peruško, D., Milinović, V., Radović, I.,& Bibić, N. M.. (2008). Ion Beam Modification of Reactively Sputtered TiN Thin Films. in Publications of the Astronomical Observatory of Belgrade(84), 205-208.
https://hdl.handle.net/21.15107/rcub_vinar_6828

Popović M, Novaković M, Milosavljević M, Peruško D, Milinović V, Radović I, Bibić NM. Ion Beam Modification of Reactively Sputtered TiN Thin Films. in Publications of the Astronomical Observatory of Belgrade. 2008;(84):205-208.
https://hdl.handle.net/21.15107/rcub_vinar_6828 .

Popović, Maja, Novaković, Mirjana, Milosavljević, Momir, Peruško, Davor, Milinović, Velimir, Radović, Ivan, Bibić, Nataša M., "Ion Beam Modification of Reactively Sputtered TiN Thin Films" in Publications of the Astronomical Observatory of Belgrade, no. 84 (2008):205-208,
https://hdl.handle.net/21.15107/rcub_vinar_6828 .

TY  - JOUR
AU  - Bibić, Nataša M.
AU  - Milinović, Velimir
AU  - Lieb, K. P.
AU  - Milosavljević, Momir
AU  - Schrempel, F.
PY  - 2007
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/3150
AB  - Ion-beam mixing of Fe/Si bilayers, induced at room temperature by 100 keV Ar-40(+), 180 keV Kr-86(+), and 250 keV Xe-132(+) ions, was investigated. The study focuses on the influence of the preamorphization of the Si(100) substrates by 1.0 keV Ar-ion irradiation. Rutherford backscattering spectroscopy as well as scanning and transmission electron microscopies were applied for structural characterization. The mixing rate across the preamorphized Fe/Si interface was, on average, by 76% higher than that of crystalline Si. (c) 2007 American Institute of Physics.
T2  - Applied Physics Letters
T1  - Enhanced interface mixing of Fe/Si bilayers on preamorphized silicon substrates
VL  - 90
IS  - 5
DO  - 10.1063/1.2432952
ER  - 

@article{
author = "Bibić, Nataša M. and Milinović, Velimir and Lieb, K. P. and Milosavljević, Momir and Schrempel, F.",
year = "2007",
abstract = "Ion-beam mixing of Fe/Si bilayers, induced at room temperature by 100 keV Ar-40(+), 180 keV Kr-86(+), and 250 keV Xe-132(+) ions, was investigated. The study focuses on the influence of the preamorphization of the Si(100) substrates by 1.0 keV Ar-ion irradiation. Rutherford backscattering spectroscopy as well as scanning and transmission electron microscopies were applied for structural characterization. The mixing rate across the preamorphized Fe/Si interface was, on average, by 76% higher than that of crystalline Si. (c) 2007 American Institute of Physics.",
journal = "Applied Physics Letters",
title = "Enhanced interface mixing of Fe/Si bilayers on preamorphized silicon substrates",
volume = "90",
number = "5",
doi = "10.1063/1.2432952"
}

Bibić, N. M., Milinović, V., Lieb, K. P., Milosavljević, M.,& Schrempel, F.. (2007). Enhanced interface mixing of Fe/Si bilayers on preamorphized silicon substrates. in Applied Physics Letters, 90(5).
https://doi.org/10.1063/1.2432952

Bibić NM, Milinović V, Lieb KP, Milosavljević M, Schrempel F. Enhanced interface mixing of Fe/Si bilayers on preamorphized silicon substrates. in Applied Physics Letters. 2007;90(5).
doi:10.1063/1.2432952 .

Bibić, Nataša M., Milinović, Velimir, Lieb, K. P., Milosavljević, Momir, Schrempel, F., "Enhanced interface mixing of Fe/Si bilayers on preamorphized silicon substrates" in Applied Physics Letters, 90, no. 5 (2007),
https://doi.org/10.1063/1.2432952 . .

TY  - JOUR
AU  - Novaković, Mirjana M.
AU  - Popović, Maja
AU  - Peruško, Davor
AU  - Radović, Ivan
AU  - Milinović, Velimir
AU  - Milosavljević, Momir
PY  - 2007
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6582
AB  - We present a study of the micro-structural changes induced in Cr-N layers by irradiation with argon ions. The layers were deposited by reactive ion sputtering on (100) Si wafers, to a thickness of 240-280 nm, at different nitrogen partial pressures and different substrate temperatures. The samples were subsequently irradiated with 120 keV Ar+, to 1x10(15) and 1x10(16) ions/cm(2). Structural characterization was performed with Rutherford backscattering spectroscopy, x-ray diffraction analysis and transmission electron microscopy, and we also did electrical resistivity measurements on the samples. It has been found that the layers grow in the form of a polycrystalline columnar structure, with a columnar width of a few tens of nm. The layer composition, Cr2N or CrN, strongly depends on the nitrogen partial pressure during deposition. Ion irradiation induces local micro-structural changes, formation of nano-particles and defects, though the structures retain their polycrystalline nature. The induced crystalline defects yield an increase of electrical resistivity after ion irradiation.
T2  - Materials Science Forum
T1  - Ion Implantation Induced Modifications in Reactively Sputtered Cr-N Layers on Si Substrates
VL  - 555
SP  - 35
EP  - 40
DO  - 10.4028/www.scientific.net/MSF.555.35
ER  - 

@article{
author = "Novaković, Mirjana M. and Popović, Maja and Peruško, Davor and Radović, Ivan and Milinović, Velimir and Milosavljević, Momir",
year = "2007",
abstract = "We present a study of the micro-structural changes induced in Cr-N layers by irradiation with argon ions. The layers were deposited by reactive ion sputtering on (100) Si wafers, to a thickness of 240-280 nm, at different nitrogen partial pressures and different substrate temperatures. The samples were subsequently irradiated with 120 keV Ar+, to 1x10(15) and 1x10(16) ions/cm(2). Structural characterization was performed with Rutherford backscattering spectroscopy, x-ray diffraction analysis and transmission electron microscopy, and we also did electrical resistivity measurements on the samples. It has been found that the layers grow in the form of a polycrystalline columnar structure, with a columnar width of a few tens of nm. The layer composition, Cr2N or CrN, strongly depends on the nitrogen partial pressure during deposition. Ion irradiation induces local micro-structural changes, formation of nano-particles and defects, though the structures retain their polycrystalline nature. The induced crystalline defects yield an increase of electrical resistivity after ion irradiation.",
journal = "Materials Science Forum",
title = "Ion Implantation Induced Modifications in Reactively Sputtered Cr-N Layers on Si Substrates",
volume = "555",
pages = "35-40",
doi = "10.4028/www.scientific.net/MSF.555.35"
}

Novaković, M. M., Popović, M., Peruško, D., Radović, I., Milinović, V.,& Milosavljević, M.. (2007). Ion Implantation Induced Modifications in Reactively Sputtered Cr-N Layers on Si Substrates. in Materials Science Forum, 555, 35-40.
https://doi.org/10.4028/www.scientific.net/MSF.555.35

Novaković MM, Popović M, Peruško D, Radović I, Milinović V, Milosavljević M. Ion Implantation Induced Modifications in Reactively Sputtered Cr-N Layers on Si Substrates. in Materials Science Forum. 2007;555:35-40.
doi:10.4028/www.scientific.net/MSF.555.35 .

Novaković, Mirjana M., Popović, Maja, Peruško, Davor, Radović, Ivan, Milinović, Velimir, Milosavljević, Momir, "Ion Implantation Induced Modifications in Reactively Sputtered Cr-N Layers on Si Substrates" in Materials Science Forum, 555 (2007):35-40,
https://doi.org/10.4028/www.scientific.net/MSF.555.35 . .

TY  - JOUR
AU  - Milinović, Velimir
AU  - Bibić, Nataša M.
AU  - Lieb, K. P.
AU  - Milosavljević, Momir
AU  - Schrempel, F.
PY  - 2007
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6655
AB  - Charge-state equilibration of ions moving in matter occurs within femtoseconds and when penetrating nanometer depths. Ion-beam mixing in bilayers, tens of nm thick, should therefore not depend on the charge state of the projectiles. As the experimental situation for metal/silicon bilayers irradiated with noble-gas ions of different charge-states is ambiguous, we studied interface mixing of Fe/Si(1 0 0) bilayers, induced by 100 keV Ar-40, 180 keV Kr-86 and 250 keV Xe-132 ions, either singly and multiply charged (Ar8+, Kr11+, Xe17+). No significant influence of the ionic charge-state was established for Kr and Xe ions; a slightly higher mixing rate was found for Ar8+ than for Ar1+ irradiation. (c) 2007 Elsevier B.V. All rights reserved.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Interface mixing of Fe/Si bilayers by noble-gas ions: Are there effects of the ionic charge state?
VL  - 257
SP  - 605
EP  - 608
DO  - 10.1016/j.nimb.2007.01.063
ER  - 

@article{
author = "Milinović, Velimir and Bibić, Nataša M. and Lieb, K. P. and Milosavljević, Momir and Schrempel, F.",
year = "2007",
abstract = "Charge-state equilibration of ions moving in matter occurs within femtoseconds and when penetrating nanometer depths. Ion-beam mixing in bilayers, tens of nm thick, should therefore not depend on the charge state of the projectiles. As the experimental situation for metal/silicon bilayers irradiated with noble-gas ions of different charge-states is ambiguous, we studied interface mixing of Fe/Si(1 0 0) bilayers, induced by 100 keV Ar-40, 180 keV Kr-86 and 250 keV Xe-132 ions, either singly and multiply charged (Ar8+, Kr11+, Xe17+). No significant influence of the ionic charge-state was established for Kr and Xe ions; a slightly higher mixing rate was found for Ar8+ than for Ar1+ irradiation. (c) 2007 Elsevier B.V. All rights reserved.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Interface mixing of Fe/Si bilayers by noble-gas ions: Are there effects of the ionic charge state?",
volume = "257",
pages = "605-608",
doi = "10.1016/j.nimb.2007.01.063"
}

Milinović, V., Bibić, N. M., Lieb, K. P., Milosavljević, M.,& Schrempel, F.. (2007). Interface mixing of Fe/Si bilayers by noble-gas ions: Are there effects of the ionic charge state?. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 257, 605-608.
https://doi.org/10.1016/j.nimb.2007.01.063

Milinović V, Bibić NM, Lieb KP, Milosavljević M, Schrempel F. Interface mixing of Fe/Si bilayers by noble-gas ions: Are there effects of the ionic charge state?. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2007;257:605-608.
doi:10.1016/j.nimb.2007.01.063 .

Milinović, Velimir, Bibić, Nataša M., Lieb, K. P., Milosavljević, Momir, Schrempel, F., "Interface mixing of Fe/Si bilayers by noble-gas ions: Are there effects of the ionic charge state?" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 257 (2007):605-608,
https://doi.org/10.1016/j.nimb.2007.01.063 . .

TY  - JOUR
AU  - Novaković, Mirjana M.
AU  - Popović, Maja
AU  - Peruško, Davor
AU  - Milinović, Velimir
AU  - Radović, Ivan
AU  - Bibić, Nataša M.
AU  - Mitrić, Miodrag
AU  - Milosavljević, Momir
PY  - 2007
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6656
AB  - This paper presents a study of the structure and composition of reactively sputtered Cr-N layers as a function of deposition parameters, and the effects of ion implantation on these structures. The layers were deposited on (1 0 0) Si substrates to a thickness of 240-280 nm, at different nitrogen partial pressure, and subsequently irradiated with 120 keV Ar ions. Structural characterisation of the samples was performed with Rutherford backscattering spectroscopy, transmission electron microscopy and X-ray diffraction analysis. We also measured their electrical resistivity with a four point probe. It was found that the layers grow in form of columnar structures, and their composition, Cr2N or CrN, strongly depends on the nitrogen partial pressure during deposition. Ion irradiation induces local micro-structural changes, formation of nano-particles and defects, which can be nicely correlated to the measured electrical resistivity. (c) 2007 Elsevier B.V. All rights reserved.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Ion implantation induced structural changes in reactively sputtered Cr-N layers on Si substrates
VL  - 257
SP  - 782
EP  - 785
DO  - 10.1016/j.nimb.2007.01.112
ER  - 

@article{
author = "Novaković, Mirjana M. and Popović, Maja and Peruško, Davor and Milinović, Velimir and Radović, Ivan and Bibić, Nataša M. and Mitrić, Miodrag and Milosavljević, Momir",
year = "2007",
abstract = "This paper presents a study of the structure and composition of reactively sputtered Cr-N layers as a function of deposition parameters, and the effects of ion implantation on these structures. The layers were deposited on (1 0 0) Si substrates to a thickness of 240-280 nm, at different nitrogen partial pressure, and subsequently irradiated with 120 keV Ar ions. Structural characterisation of the samples was performed with Rutherford backscattering spectroscopy, transmission electron microscopy and X-ray diffraction analysis. We also measured their electrical resistivity with a four point probe. It was found that the layers grow in form of columnar structures, and their composition, Cr2N or CrN, strongly depends on the nitrogen partial pressure during deposition. Ion irradiation induces local micro-structural changes, formation of nano-particles and defects, which can be nicely correlated to the measured electrical resistivity. (c) 2007 Elsevier B.V. All rights reserved.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Ion implantation induced structural changes in reactively sputtered Cr-N layers on Si substrates",
volume = "257",
pages = "782-785",
doi = "10.1016/j.nimb.2007.01.112"
}

Novaković, M. M., Popović, M., Peruško, D., Milinović, V., Radović, I., Bibić, N. M., Mitrić, M.,& Milosavljević, M.. (2007). Ion implantation induced structural changes in reactively sputtered Cr-N layers on Si substrates. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 257, 782-785.
https://doi.org/10.1016/j.nimb.2007.01.112

Novaković MM, Popović M, Peruško D, Milinović V, Radović I, Bibić NM, Mitrić M, Milosavljević M. Ion implantation induced structural changes in reactively sputtered Cr-N layers on Si substrates. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2007;257:782-785.
doi:10.1016/j.nimb.2007.01.112 .

Novaković, Mirjana M., Popović, Maja, Peruško, Davor, Milinović, Velimir, Radović, Ivan, Bibić, Nataša M., Mitrić, Miodrag, Milosavljević, Momir, "Ion implantation induced structural changes in reactively sputtered Cr-N layers on Si substrates" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 257 (2007):782-785,
https://doi.org/10.1016/j.nimb.2007.01.112 . .

TY  - CONF
AU  - Popović, M.
AU  - Novaković, M.
AU  - Peruško, Davor
AU  - Radović, Ivan
AU  - Milinović, Velimir
AU  - Mitrić, M.
AU  - Milosavljević, M.
PY  - 2007
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12672
AB  - Titanium-nitrude layers are interesting as hard coathings, wear and corrosion protection materials. In general, their functional properties depend on their microstructure, i. e. the mean grain size, grain boundaries, crystalline defects, preferred orientation, surface and interface morphology, etc. Here we present a study of the micro-structural changes induced in TiN layers by irradiation with argon ions. Titanium nitride thin films were deposited by reactive ion sputtering on (100) Si to a thickness of ~250nm. After deposition the films were implanted with 120keV argon ions to the fluences of 1x1015 and 1x1016ions/cm2. Structural characterisation of the samples was performed by cross-sectional transmission electron microscopy, x-ray diffraction and Rutherford backscattering spectrometry. It was found that ion irradiation induces local micro-structural changes, formation of nanoparticles and defects. We also measured their electrical resistivity with a four point probe. The induced crystalline defects yield an increase of electrical resistivity after ion irradiation.
PB  - Belgrade : Institute of Technical Sciences of SASA
C3  - YUCOMAT 2007 : 9th Annual Conference YUCOMAT 2007 : Programme and the book of abstracts
T1  - A study of microstructural changes in TiN thin films induced by ion implantation
SP  - 69
EP  - 69
UR  - https://hdl.handle.net/21.15107/rcub_vinar_12672
ER  - 

@conference{
author = "Popović, M. and Novaković, M. and Peruško, Davor and Radović, Ivan and Milinović, Velimir and Mitrić, M. and Milosavljević, M.",
year = "2007",
abstract = "Titanium-nitrude layers are interesting as hard coathings, wear and corrosion protection materials. In general, their functional properties depend on their microstructure, i. e. the mean grain size, grain boundaries, crystalline defects, preferred orientation, surface and interface morphology, etc. Here we present a study of the micro-structural changes induced in TiN layers by irradiation with argon ions. Titanium nitride thin films were deposited by reactive ion sputtering on (100) Si to a thickness of ~250nm. After deposition the films were implanted with 120keV argon ions to the fluences of 1x1015 and 1x1016ions/cm2. Structural characterisation of the samples was performed by cross-sectional transmission electron microscopy, x-ray diffraction and Rutherford backscattering spectrometry. It was found that ion irradiation induces local micro-structural changes, formation of nanoparticles and defects. We also measured their electrical resistivity with a four point probe. The induced crystalline defects yield an increase of electrical resistivity after ion irradiation.",
publisher = "Belgrade : Institute of Technical Sciences of SASA",
journal = "YUCOMAT 2007 : 9th Annual Conference YUCOMAT 2007 : Programme and the book of abstracts",
title = "A study of microstructural changes in TiN thin films induced by ion implantation",
pages = "69-69",
url = "https://hdl.handle.net/21.15107/rcub_vinar_12672"
}

Popović, M., Novaković, M., Peruško, D., Radović, I., Milinović, V., Mitrić, M.,& Milosavljević, M.. (2007). A study of microstructural changes in TiN thin films induced by ion implantation. in YUCOMAT 2007 : 9th Annual Conference YUCOMAT 2007 : Programme and the book of abstracts
Belgrade : Institute of Technical Sciences of SASA., 69-69.
https://hdl.handle.net/21.15107/rcub_vinar_12672

Popović M, Novaković M, Peruško D, Radović I, Milinović V, Mitrić M, Milosavljević M. A study of microstructural changes in TiN thin films induced by ion implantation. in YUCOMAT 2007 : 9th Annual Conference YUCOMAT 2007 : Programme and the book of abstracts. 2007;:69-69.
https://hdl.handle.net/21.15107/rcub_vinar_12672 .

Popović, M., Novaković, M., Peruško, Davor, Radović, Ivan, Milinović, Velimir, Mitrić, M., Milosavljević, M., "A study of microstructural changes in TiN thin films induced by ion implantation" in YUCOMAT 2007 : 9th Annual Conference YUCOMAT 2007 : Programme and the book of abstracts (2007):69-69,
https://hdl.handle.net/21.15107/rcub_vinar_12672 .

TY  - CONF
AU  - Popović, Maja
AU  - Novaković, Mirjana
AU  - Peruško, Davor
AU  - Radović, Ivan
AU  - Milinović, Velimir
AU  - Stojanović, Z.
AU  - Bibić, Nataša
AU  - Milosavljević, M.
PY  - 2006
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12890
C3  - IBMM 2006 : Ion Beam Modification Materials : Program and Abstracts
T1  - Ion beam modification of TiN thin films - a study of the induced microstructural changes
SP  - 154
EP  - 154
UR  - https://hdl.handle.net/21.15107/rcub_vinar_12890
ER  - 

@conference{
author = "Popović, Maja and Novaković, Mirjana and Peruško, Davor and Radović, Ivan and Milinović, Velimir and Stojanović, Z. and Bibić, Nataša and Milosavljević, M.",
year = "2006",
journal = "IBMM 2006 : Ion Beam Modification Materials : Program and Abstracts",
title = "Ion beam modification of TiN thin films - a study of the induced microstructural changes",
pages = "154-154",
url = "https://hdl.handle.net/21.15107/rcub_vinar_12890"
}

Popović, M., Novaković, M., Peruško, D., Radović, I., Milinović, V., Stojanović, Z., Bibić, N.,& Milosavljević, M.. (2006). Ion beam modification of TiN thin films - a study of the induced microstructural changes. in IBMM 2006 : Ion Beam Modification Materials : Program and Abstracts, 154-154.
https://hdl.handle.net/21.15107/rcub_vinar_12890

Popović M, Novaković M, Peruško D, Radović I, Milinović V, Stojanović Z, Bibić N, Milosavljević M. Ion beam modification of TiN thin films - a study of the induced microstructural changes. in IBMM 2006 : Ion Beam Modification Materials : Program and Abstracts. 2006;:154-154.
https://hdl.handle.net/21.15107/rcub_vinar_12890 .

Popović, Maja, Novaković, Mirjana, Peruško, Davor, Radović, Ivan, Milinović, Velimir, Stojanović, Z., Bibić, Nataša, Milosavljević, M., "Ion beam modification of TiN thin films - a study of the induced microstructural changes" in IBMM 2006 : Ion Beam Modification Materials : Program and Abstracts (2006):154-154,
https://hdl.handle.net/21.15107/rcub_vinar_12890 .

TY  - JOUR
AU  - Milinović, Velimir
AU  - Milosavljević, Momir
AU  - Popović, Maja
AU  - Novaković, Mirjana M.
AU  - Peruško, Davor
AU  - Radović, Ivan
AU  - Bibić, Nataša M.
PY  - 2006
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6600
AB  - In this paper we present a study of the formation of TiN thin films during the IBAD process. We have analyzed the effects of process parameters such as Ar+ ion energy, ion incident angle, Ti evaporation rates and partial pressure of N-2 on preferred orientation and resistivity of TiN layers. TiN thin films were grown by evaporation of Ti in the presence of N-2 and simultaneously bombarded with Ar+ ions. Base pressure in the IBAD chamber was 1(.)10(-6) mbar. The partial pressure of Ar during deposition was (3.1 - 6.6)(.)10(-6) mbar and partial pressure of N-2 was 6.0(.)10(-6) - 1.1(.)10(-5) mbar. The substrates used were Si (100) wafers. TiN thin layers were deposited to a thickness of 85 - 360 nm at deposition rates of Ti from 0.05 to 0.25nm/s. Argon ion energy was varied from 1.5 to 2.0 keV and the angle of ion beam incidence from 0 to 30 degrees. All samples were analyzed by Rutherford backscattering spectrometry (RBS). The changes in concentration profiles of titanium, nitrogen and silicon were determined with 900 keV He++ ion beam. The RBS spectra were analyzed with the demo version of WiNDF code. We have also used X-ray diffraction (XRD) for phase identification. The resistivity of samples was measured with four-point probe method. The results clearly show that TiN thin layer grows with (111) and (200) preferred orientation, depending on the IBAD deposition parameters. Consequently, the formation of TiN thin layers with well-controlled crystalline orientation occurs. Also, it was found that the variations in TiN film resistivity could be mainly attributed to the ion beam induced damage during the IBAD process.
T2  - Materials Science Forum
T1  - Ion beam assisted deposition of TiN thin films on Si substrate
VL  - 518
SP  - 155
EP  - 160
DO  - 10.4028/www.scientific.net/MSF.518.155
ER  - 

@article{
author = "Milinović, Velimir and Milosavljević, Momir and Popović, Maja and Novaković, Mirjana M. and Peruško, Davor and Radović, Ivan and Bibić, Nataša M.",
year = "2006",
abstract = "In this paper we present a study of the formation of TiN thin films during the IBAD process. We have analyzed the effects of process parameters such as Ar+ ion energy, ion incident angle, Ti evaporation rates and partial pressure of N-2 on preferred orientation and resistivity of TiN layers. TiN thin films were grown by evaporation of Ti in the presence of N-2 and simultaneously bombarded with Ar+ ions. Base pressure in the IBAD chamber was 1(.)10(-6) mbar. The partial pressure of Ar during deposition was (3.1 - 6.6)(.)10(-6) mbar and partial pressure of N-2 was 6.0(.)10(-6) - 1.1(.)10(-5) mbar. The substrates used were Si (100) wafers. TiN thin layers were deposited to a thickness of 85 - 360 nm at deposition rates of Ti from 0.05 to 0.25nm/s. Argon ion energy was varied from 1.5 to 2.0 keV and the angle of ion beam incidence from 0 to 30 degrees. All samples were analyzed by Rutherford backscattering spectrometry (RBS). The changes in concentration profiles of titanium, nitrogen and silicon were determined with 900 keV He++ ion beam. The RBS spectra were analyzed with the demo version of WiNDF code. We have also used X-ray diffraction (XRD) for phase identification. The resistivity of samples was measured with four-point probe method. The results clearly show that TiN thin layer grows with (111) and (200) preferred orientation, depending on the IBAD deposition parameters. Consequently, the formation of TiN thin layers with well-controlled crystalline orientation occurs. Also, it was found that the variations in TiN film resistivity could be mainly attributed to the ion beam induced damage during the IBAD process.",
journal = "Materials Science Forum",
title = "Ion beam assisted deposition of TiN thin films on Si substrate",
volume = "518",
pages = "155-160",
doi = "10.4028/www.scientific.net/MSF.518.155"
}

Milinović, V., Milosavljević, M., Popović, M., Novaković, M. M., Peruško, D., Radović, I.,& Bibić, N. M.. (2006). Ion beam assisted deposition of TiN thin films on Si substrate. in Materials Science Forum, 518, 155-160.
https://doi.org/10.4028/www.scientific.net/MSF.518.155

Milinović V, Milosavljević M, Popović M, Novaković MM, Peruško D, Radović I, Bibić NM. Ion beam assisted deposition of TiN thin films on Si substrate. in Materials Science Forum. 2006;518:155-160.
doi:10.4028/www.scientific.net/MSF.518.155 .

Milinović, Velimir, Milosavljević, Momir, Popović, Maja, Novaković, Mirjana M., Peruško, Davor, Radović, Ivan, Bibić, Nataša M., "Ion beam assisted deposition of TiN thin films on Si substrate" in Materials Science Forum, 518 (2006):155-160,
https://doi.org/10.4028/www.scientific.net/MSF.518.155 . .

TY  - CONF
AU  - Milinović, Velimir
AU  - Zhang, Kun
AU  - Bibić, Nataša M.
AU  - Leib, K. P.
AU  - Milosavljević, Momir
AU  - Sahoo, P. K.
PY  - 2006
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6644
AB  - Ion beam irradiation of a-Si/Fe/c-Si trilayers with 350-MeV Au ions and of Fe/a-Si bilayers with 250-keV Xe ions were carried out in order to measure the interface mixing rates and microstructure, phase formation, and magnetic polarization in the regimes of electronic and nuclear stopping. For Fe/a-Si and nuclear stopping, an enhancement of the interface mixing rate of 1.75 +/- 0.15 was observed relative to Fe/c-Si. For electronic stopping, the enhancement is 3.21 +/- 0.34. A plausible explanation of this enhancement lies in the much smaller thermal conductivity in a-Si relative to c-Si, which prolongates the relaxation phase of the ion-induced thermal spikes.
C3  - AIP Conference Proceedings
T1  - Ion beam mixing at crystalline and amorphous Fe/Si interfaces
VL  - 876
SP  - 209
EP  - +
UR  - https://hdl.handle.net/21.15107/rcub_vinar_6644
ER  - 

@conference{
author = "Milinović, Velimir and Zhang, Kun and Bibić, Nataša M. and Leib, K. P. and Milosavljević, Momir and Sahoo, P. K.",
year = "2006",
abstract = "Ion beam irradiation of a-Si/Fe/c-Si trilayers with 350-MeV Au ions and of Fe/a-Si bilayers with 250-keV Xe ions were carried out in order to measure the interface mixing rates and microstructure, phase formation, and magnetic polarization in the regimes of electronic and nuclear stopping. For Fe/a-Si and nuclear stopping, an enhancement of the interface mixing rate of 1.75 +/- 0.15 was observed relative to Fe/c-Si. For electronic stopping, the enhancement is 3.21 +/- 0.34. A plausible explanation of this enhancement lies in the much smaller thermal conductivity in a-Si relative to c-Si, which prolongates the relaxation phase of the ion-induced thermal spikes.",
journal = "AIP Conference Proceedings",
title = "Ion beam mixing at crystalline and amorphous Fe/Si interfaces",
volume = "876",
pages = "209-+",
url = "https://hdl.handle.net/21.15107/rcub_vinar_6644"
}

Milinović, V., Zhang, K., Bibić, N. M., Leib, K. P., Milosavljević, M.,& Sahoo, P. K.. (2006). Ion beam mixing at crystalline and amorphous Fe/Si interfaces. in AIP Conference Proceedings, 876, 209-+.
https://hdl.handle.net/21.15107/rcub_vinar_6644

Milinović V, Zhang K, Bibić NM, Leib KP, Milosavljević M, Sahoo PK. Ion beam mixing at crystalline and amorphous Fe/Si interfaces. in AIP Conference Proceedings. 2006;876:209-+.
https://hdl.handle.net/21.15107/rcub_vinar_6644 .

Milinović, Velimir, Zhang, Kun, Bibić, Nataša M., Leib, K. P., Milosavljević, Momir, Sahoo, P. K., "Ion beam mixing at crystalline and amorphous Fe/Si interfaces" in AIP Conference Proceedings, 876 (2006):209-+,
https://hdl.handle.net/21.15107/rcub_vinar_6644 .

TY  - CONF
AU  - Popović, M.
AU  - Novaković, M.
AU  - Peruško, Davor
AU  - Radović, Ivan
AU  - Milinović, Velimir
AU  - Mitrić, M.
AU  - Bibić, Nataša
AU  - Milosavljević, M.
PY  - 2006
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12671
AB  - study of the microstructural changes in TiN films induced by implantation of nitrogen or argon ions is presented. Titanium nitride thin films were deposited by reactive ion sputtering from a 99.9% Ti target, with an argon ion beam in a nitrogen ambient. The base pressure in the chamber was ~ 2x10-6 mbar, N2 partial pressure 3x10-4 mbar, and Ar partial pressure 1x10-3 mbar. The films were deposited on (100) Si substrates, to a thickness of 200 nm, at a rate of ~ 7 nm/min, at ambient temperature. After deposition the films were implanted with 80 keV nitrogen ions or 120 keV argon ions, to the fluences from 1-15x1015 ions/cm2. The ion beam was uniformly scanned over an area of 2x2 cm2 on the target, and the beam current was held at ~ 1 A/cm2 in order to avoid heating of the samples during ion irradiation. The implantation energy was chosen to give the projected ion range within the deposited layers, in order to minimize the influence of the substrate on the induced structural changes. Structural analysis of the samples was performed by cross-sectional transmission electron microscopy, xray diffraction, and Rutherford backscattering spectrometry. While ion implantation is mainly used to improve adhesion of these layers to the substrate, our primary interest was to study microstructural changes induced within the layers. We have correlated these changes with the ion implantation parameters, i.e. the ion mass, energy and fluence.
PB  - Belgrade : Institute of Technical Sciences of SASA
C3  - YUCOMAT 2006 : 8th Annual Conference YUCOMAT 2006 : Programme and the book of abstracts
T1  - Microstructural changes in TiN thin films induced by ion implantation
SP  - 100
EP  - 100
UR  - https://hdl.handle.net/21.15107/rcub_vinar_12671
ER  - 

@conference{
author = "Popović, M. and Novaković, M. and Peruško, Davor and Radović, Ivan and Milinović, Velimir and Mitrić, M. and Bibić, Nataša and Milosavljević, M.",
year = "2006",
abstract = "study of the microstructural changes in TiN films induced by implantation of nitrogen or argon ions is presented. Titanium nitride thin films were deposited by reactive ion sputtering from a 99.9% Ti target, with an argon ion beam in a nitrogen ambient. The base pressure in the chamber was ~ 2x10-6 mbar, N2 partial pressure 3x10-4 mbar, and Ar partial pressure 1x10-3 mbar. The films were deposited on (100) Si substrates, to a thickness of 200 nm, at a rate of ~ 7 nm/min, at ambient temperature. After deposition the films were implanted with 80 keV nitrogen ions or 120 keV argon ions, to the fluences from 1-15x1015 ions/cm2. The ion beam was uniformly scanned over an area of 2x2 cm2 on the target, and the beam current was held at ~ 1 A/cm2 in order to avoid heating of the samples during ion irradiation. The implantation energy was chosen to give the projected ion range within the deposited layers, in order to minimize the influence of the substrate on the induced structural changes. Structural analysis of the samples was performed by cross-sectional transmission electron microscopy, xray diffraction, and Rutherford backscattering spectrometry. While ion implantation is mainly used to improve adhesion of these layers to the substrate, our primary interest was to study microstructural changes induced within the layers. We have correlated these changes with the ion implantation parameters, i.e. the ion mass, energy and fluence.",
publisher = "Belgrade : Institute of Technical Sciences of SASA",
journal = "YUCOMAT 2006 : 8th Annual Conference YUCOMAT 2006 : Programme and the book of abstracts",
title = "Microstructural changes in TiN thin films induced by ion implantation",
pages = "100-100",
url = "https://hdl.handle.net/21.15107/rcub_vinar_12671"
}

Popović, M., Novaković, M., Peruško, D., Radović, I., Milinović, V., Mitrić, M., Bibić, N.,& Milosavljević, M.. (2006). Microstructural changes in TiN thin films induced by ion implantation. in YUCOMAT 2006 : 8th Annual Conference YUCOMAT 2006 : Programme and the book of abstracts
Belgrade : Institute of Technical Sciences of SASA., 100-100.
https://hdl.handle.net/21.15107/rcub_vinar_12671

Popović M, Novaković M, Peruško D, Radović I, Milinović V, Mitrić M, Bibić N, Milosavljević M. Microstructural changes in TiN thin films induced by ion implantation. in YUCOMAT 2006 : 8th Annual Conference YUCOMAT 2006 : Programme and the book of abstracts. 2006;:100-100.
https://hdl.handle.net/21.15107/rcub_vinar_12671 .

Popović, M., Novaković, M., Peruško, Davor, Radović, Ivan, Milinović, Velimir, Mitrić, M., Bibić, Nataša, Milosavljević, M., "Microstructural changes in TiN thin films induced by ion implantation" in YUCOMAT 2006 : 8th Annual Conference YUCOMAT 2006 : Programme and the book of abstracts (2006):100-100,
https://hdl.handle.net/21.15107/rcub_vinar_12671 .

TY  - THES
AU  - Milinović, Velimir
PY  - 2005
UR  - https://ediss.uni-goettingen.de/handle/11858/00-1735-0000-0006-B585-1
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/7594
AB  - The present study focuses on the changes in the structural and magnetic properties in Fe/Si bilayers induced by heavy-ion irradiation (14N, 40Ar, 84Kr, 132Xe, 197Au). With respect to previous work, in which mainly noble-gas ions of low charge state and several hundred keV energy were investigated, several "non-standard" implantation conditions were considered: (1) The use of chemically active ions such as nitrogen demonstrated the competition between nitride formation and ion beam mixing at the interface. During implantation only iron nitrides were formed; even at the highest nitrogen fluence no silicides were formed. (2) For several noble-gas ions, the effects of ion charge and low-energy Ar+ pre-implantation into the Si wafers were studied. While the interface mixing rate does not depend on the ion charge, pre-amorphization of the Si wafer enhances the mixing rate by a factor 2. (3) Finally, experiments were conducted for swift 350 MeV 197Au26+ ions to measure the mixing rate and the magnetic anisotropy in the regime of electronic stopping. A very high mixing rate of 55(5) nm4 was found and attributed to thermal spikes due to the very high energy density of about 40 keV/nm deposited in the Fe/Si couple.
AB  - Die vorliegende Arbeit beschreibt Veränderungen der strukturellen und magnetischen Eigenschaften von Fe/Si-Doppelschichten nach dem Beschuss mit schweren Ionen (14N, 40Ar, 84Kr, 132Xe, 197Au). Im Vergleich zu anderen Arbeiten, die sich hauptsächlich mit dem Beschuss durch niedrig geladene Edelgasionen bei einigen 100 keV beschäftigen, werden hier verschiedene Nicht-Standard -Implantationsbedingungen betrachtet. Diese sind: (1)der Beschuss mit chemisch aktiven Ionen (i.e. Stickstoff), der zur Bildung von Eisennitridphasen führt. (2)Beobachtungen zum Einfluss der Ionenladung bei Edelgasen und zum Einfluss der Vorimplantation von Ar+-Ionen niedriger Energie. (3)Experimente mit schnellen und schweren Ionen am Beispiel von 350 MeV 197Au26+-Ionen.
PB  - Georg-August-Universität, Göttingen
T1  - Ion-beam mixing of Fe/Si bilayers
T1  - Ionenstrahkmischen von Fe/Si Dopelschichten
UR  - https://hdl.handle.net/21.15107/rcub_vinar_7594
ER  - 

@phdthesis{
author = "Milinović, Velimir",
year = "2005",
abstract = "The present study focuses on the changes in the structural and magnetic properties in Fe/Si bilayers induced by heavy-ion irradiation (14N, 40Ar, 84Kr, 132Xe, 197Au). With respect to previous work, in which mainly noble-gas ions of low charge state and several hundred keV energy were investigated, several "non-standard" implantation conditions were considered: (1) The use of chemically active ions such as nitrogen demonstrated the competition between nitride formation and ion beam mixing at the interface. During implantation only iron nitrides were formed; even at the highest nitrogen fluence no silicides were formed. (2) For several noble-gas ions, the effects of ion charge and low-energy Ar+ pre-implantation into the Si wafers were studied. While the interface mixing rate does not depend on the ion charge, pre-amorphization of the Si wafer enhances the mixing rate by a factor 2. (3) Finally, experiments were conducted for swift 350 MeV 197Au26+ ions to measure the mixing rate and the magnetic anisotropy in the regime of electronic stopping. A very high mixing rate of 55(5) nm4 was found and attributed to thermal spikes due to the very high energy density of about 40 keV/nm deposited in the Fe/Si couple., Die vorliegende Arbeit beschreibt Veränderungen der strukturellen und magnetischen Eigenschaften von Fe/Si-Doppelschichten nach dem Beschuss mit schweren Ionen (14N, 40Ar, 84Kr, 132Xe, 197Au). Im Vergleich zu anderen Arbeiten, die sich hauptsächlich mit dem Beschuss durch niedrig geladene Edelgasionen bei einigen 100 keV beschäftigen, werden hier verschiedene Nicht-Standard -Implantationsbedingungen betrachtet. Diese sind: (1)der Beschuss mit chemisch aktiven Ionen (i.e. Stickstoff), der zur Bildung von Eisennitridphasen führt. (2)Beobachtungen zum Einfluss der Ionenladung bei Edelgasen und zum Einfluss der Vorimplantation von Ar+-Ionen niedriger Energie. (3)Experimente mit schnellen und schweren Ionen am Beispiel von 350 MeV 197Au26+-Ionen.",
publisher = "Georg-August-Universität, Göttingen",
title = "Ion-beam mixing of Fe/Si bilayers, Ionenstrahkmischen von Fe/Si Dopelschichten",
url = "https://hdl.handle.net/21.15107/rcub_vinar_7594"
}

Milinović, V.. (2005). Ion-beam mixing of Fe/Si bilayers. 
Georg-August-Universität, Göttingen..
https://hdl.handle.net/21.15107/rcub_vinar_7594

Milinović V. Ion-beam mixing of Fe/Si bilayers. 2005;.
https://hdl.handle.net/21.15107/rcub_vinar_7594 .

Milinović, Velimir, "Ion-beam mixing of Fe/Si bilayers" (2005),
https://hdl.handle.net/21.15107/rcub_vinar_7594 .

TY  - CONF
AU  - Peruško, Davor
AU  - Bibić, Nataša
AU  - Milinović, Velimir
PY  - 2004
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12895
AB  - Ion implantation represents one surface treatment permitting the wear resistance of materials to be enhanced and their tribological properties to be improved. High dose nitrogen implantations (in the range from 2x1017 – 5x1017 ions/cm2) at 40keV ions energy induce the formation of Fe2N iron nitride in the surface layer of the low quality C.1350 steel. Microhardness measurements show increases of microhardness as much as a factor of 3.
C3  - SFKM 2004 : XVI National Symposium on Condensed Matter Physics : Program and Contributed Papers
T1  - The Effects of Nitrogen Low Energy Ion Implantation on the Microhardness of Steel
SP  - 14
EP  - 17
UR  - https://hdl.handle.net/21.15107/rcub_vinar_12895
ER  - 

@conference{
author = "Peruško, Davor and Bibić, Nataša and Milinović, Velimir",
year = "2004",
abstract = "Ion implantation represents one surface treatment permitting the wear resistance of materials to be enhanced and their tribological properties to be improved. High dose nitrogen implantations (in the range from 2x1017 – 5x1017 ions/cm2) at 40keV ions energy induce the formation of Fe2N iron nitride in the surface layer of the low quality C.1350 steel. Microhardness measurements show increases of microhardness as much as a factor of 3.",
journal = "SFKM 2004 : XVI National Symposium on Condensed Matter Physics : Program and Contributed Papers",
title = "The Effects of Nitrogen Low Energy Ion Implantation on the Microhardness of Steel",
pages = "14-17",
url = "https://hdl.handle.net/21.15107/rcub_vinar_12895"
}

Peruško, D., Bibić, N.,& Milinović, V.. (2004). The Effects of Nitrogen Low Energy Ion Implantation on the Microhardness of Steel. in SFKM 2004 : XVI National Symposium on Condensed Matter Physics : Program and Contributed Papers, 14-17.
https://hdl.handle.net/21.15107/rcub_vinar_12895

Peruško D, Bibić N, Milinović V. The Effects of Nitrogen Low Energy Ion Implantation on the Microhardness of Steel. in SFKM 2004 : XVI National Symposium on Condensed Matter Physics : Program and Contributed Papers. 2004;:14-17.
https://hdl.handle.net/21.15107/rcub_vinar_12895 .

Peruško, Davor, Bibić, Nataša, Milinović, Velimir, "The Effects of Nitrogen Low Energy Ion Implantation on the Microhardness of Steel" in SFKM 2004 : XVI National Symposium on Condensed Matter Physics : Program and Contributed Papers (2004):14-17,
https://hdl.handle.net/21.15107/rcub_vinar_12895 .

TY  - CONF
AU  - Bibić, Nataša
AU  - Milosavljević, M.
AU  - Milinović, Velimir
AU  - Šiljegović, M.
AU  - Peruško, Davor
AU  - Schaaf, P.
AU  - Lieb, K. P.
PY  - 2004
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12893
AB  - In recent years, considerable progress has been made in the understanding of heavyion- induced mixing and reactions of metal/semiconductor bilayers at ion energies, where nuclear stopping prevails. For the study of ion induced reactions in Fe/Si structures, the 30 nm 57Fe/Si bilayers were irradiated with 22 keV N2+, 250 keV Xe+, 100 keV Ar+ and 100 keV Ar8+ ions at fluences in the range of 0.05-2x1017ions/cm2. The structural changes and phase formation induced by irradiation were analyzed by Rutherford backscattering spectroscopy (RBS), X-ray diffraction analyses (XRD) and conversion electron Mössbauer spectroscopy (CEMS). The present article briefly reviews obtained experimental findings and our attempts in modeling the atomic transport processes leading to the growth of compound layers across the metal/semiconductor interface.
C3  - SFKM 2004 : XVI National Symposium on Condensed Matter Physics : Program and Contributed Papers
T1  - Nitrogen and noble-gas ion irraditions of 57Fe/Si bilayers
SP  - 73
EP  - 73
UR  - https://hdl.handle.net/21.15107/rcub_vinar_12893
ER  - 

@conference{
author = "Bibić, Nataša and Milosavljević, M. and Milinović, Velimir and Šiljegović, M. and Peruško, Davor and Schaaf, P. and Lieb, K. P.",
year = "2004",
abstract = "In recent years, considerable progress has been made in the understanding of heavyion- induced mixing and reactions of metal/semiconductor bilayers at ion energies, where nuclear stopping prevails. For the study of ion induced reactions in Fe/Si structures, the 30 nm 57Fe/Si bilayers were irradiated with 22 keV N2+, 250 keV Xe+, 100 keV Ar+ and 100 keV Ar8+ ions at fluences in the range of 0.05-2x1017ions/cm2. The structural changes and phase formation induced by irradiation were analyzed by Rutherford backscattering spectroscopy (RBS), X-ray diffraction analyses (XRD) and conversion electron Mössbauer spectroscopy (CEMS). The present article briefly reviews obtained experimental findings and our attempts in modeling the atomic transport processes leading to the growth of compound layers across the metal/semiconductor interface.",
journal = "SFKM 2004 : XVI National Symposium on Condensed Matter Physics : Program and Contributed Papers",
title = "Nitrogen and noble-gas ion irraditions of 57Fe/Si bilayers",
pages = "73-73",
url = "https://hdl.handle.net/21.15107/rcub_vinar_12893"
}

Bibić, N., Milosavljević, M., Milinović, V., Šiljegović, M., Peruško, D., Schaaf, P.,& Lieb, K. P.. (2004). Nitrogen and noble-gas ion irraditions of 57Fe/Si bilayers. in SFKM 2004 : XVI National Symposium on Condensed Matter Physics : Program and Contributed Papers, 73-73.
https://hdl.handle.net/21.15107/rcub_vinar_12893

Bibić N, Milosavljević M, Milinović V, Šiljegović M, Peruško D, Schaaf P, Lieb KP. Nitrogen and noble-gas ion irraditions of 57Fe/Si bilayers. in SFKM 2004 : XVI National Symposium on Condensed Matter Physics : Program and Contributed Papers. 2004;:73-73.
https://hdl.handle.net/21.15107/rcub_vinar_12893 .

Bibić, Nataša, Milosavljević, M., Milinović, Velimir, Šiljegović, M., Peruško, Davor, Schaaf, P., Lieb, K. P., "Nitrogen and noble-gas ion irraditions of 57Fe/Si bilayers" in SFKM 2004 : XVI National Symposium on Condensed Matter Physics : Program and Contributed Papers (2004):73-73,
https://hdl.handle.net/21.15107/rcub_vinar_12893 .