Enhanced interface mixing of Fe/Si bilayers on preamorphized silicon substrates
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Ion-beam mixing of Fe/Si bilayers, induced at room temperature by 100 keV Ar-40(+), 180 keV Kr-86(+), and 250 keV Xe-132(+) ions, was investigated. The study focuses on the influence of the preamorphization of the Si(100) substrates by 1.0 keV Ar-ion irradiation. Rutherford backscattering spectroscopy as well as scanning and transmission electron microscopies were applied for structural characterization. The mixing rate across the preamorphized Fe/Si interface was, on average, by 76% higher than that of crystalline Si. (c) 2007 American Institute of Physics.
Извор:Applied Physics Letters, 2007, 90, 5
ISSN: 0003-6951 (print)