Effects of the Ar ions pre-amorphization of Si substrateon interface mixing of Fe/Si bilayers
АуториBibić, Nataša M.
Lieb, K. P.
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Ion beam mixing of Fe/Si bilayers, induced by 100 keV (40)Arions at room temperature was investigated. Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were applied for structural characterization. The main focus of this study was on the influence of the substrate structure on interface mixing. The influence of the substrate structure is due to the two classes of irradiated bilayers, Fe thin films deposited on crystalline or pre-amorphized Si substrates. An about 76% higher efficiency of atomic transport across the pre-amorphized Fe/a-Si interface as compared to that of Fe/c-Si bilayers was observed.
Кључне речи:Amorphous semi-conductors / ion beam mixing / RBS / SEM / TEM
Извор:Journal of Microscopy, Oxford, 2008, 232, 3, 539-541
- Deutsche Forschungsgemeinschaft, Ministry of Science of the Republic of Serbia 
ISSN: 0022-2720 (print)