Ion beam mixing at crystalline and amorphous Fe/Si interfaces
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Ion beam irradiation of a-Si/Fe/c-Si trilayers with 350-MeV Au ions and of Fe/a-Si bilayers with 250-keV Xe ions were carried out in order to measure the interface mixing rates and microstructure, phase formation, and magnetic polarization in the regimes of electronic and nuclear stopping. For Fe/a-Si and nuclear stopping, an enhancement of the interface mixing rate of 1.75 +/- 0.15 was observed relative to Fe/c-Si. For electronic stopping, the enhancement is 3.21 +/- 0.34. A plausible explanation of this enhancement lies in the much smaller thermal conductivity in a-Si relative to c-Si, which prolongates the relaxation phase of the ion-induced thermal spikes.
Кључне речи:ion beam mixing / swift heavy ions / silicides
Извор:AIP Conference Proceedings, 2006, 876, 209-+
- Deutsche Forschungsgemeinschaft, Ministry of Science and Environmental Protection of the Republic of Serbia 
- 23rd Summer School and International Symposium on Physics of Ionized Gases, Aug 28-Sep 01, 2006, Natl Park Kopaonik, Serbia
ISSN: 0094-243X (print)