High fluence nitrogen implantation in Al/Ti multilayers
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We have studied the effects of high fluence nitrogen ion implantation on the structural changes in Al/Ti multilayers, with the aim of achieving multilayered metal-nitrides. The starting structures consisted of 10 alternate sputter-deposited Al and Ti films, with a total thickness of 270 nm, on (100) Si substrates. They were implanted with 200 keV N-2(+), to 1 x 10(17) and 2 x 10(17) at/cm(2), the projected range being around half-depth of the multilayers. Structural characterization was performed by Rutherford backscattering, Auger electron spectroscopy and transmission electron microscopy. It was found that ion implantation to the higher fluence induces a full intermixing of Al/Ti layers, resulting in a multilayered structure with different content of Al, Ti and N. The applied method can be interesting for preparation of graded (AI,Ti)N multilayers, with a controlled content of nitrogen and a controlled level of Al-Ti intermixing within the structures. (C) 2008 Elsevier B.V. All right...s reserved.
Кључне речи:Al/Ti multilayers / ion implantation / hard coatings / RBS / AES / TEM
Извор:Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 2008, 266, 10, 2503-2506
- 9th European Conference on Accelerators in Applied Research and Technology, Sep 03-07, 2007, Florence, Italy
ISSN: 0168-583X (print)