Ion beam assisted deposition of TiN thin films on Si substrate
Само за регистроване кориснике
2006
Аутори
Milinović, VelimirMilosavljević, Momir
Popović, Maja
Novaković, Mirjana M.
Peruško, Davor
Radović, Ivan
Bibić, Nataša M.
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
In this paper we present a study of the formation of TiN thin films during the IBAD process. We have analyzed the effects of process parameters such as Ar+ ion energy, ion incident angle, Ti evaporation rates and partial pressure of N-2 on preferred orientation and resistivity of TiN layers. TiN thin films were grown by evaporation of Ti in the presence of N-2 and simultaneously bombarded with Ar+ ions. Base pressure in the IBAD chamber was 1(.)10(-6) mbar. The partial pressure of Ar during deposition was (3.1 - 6.6)(.)10(-6) mbar and partial pressure of N-2 was 6.0(.)10(-6) - 1.1(.)10(-5) mbar. The substrates used were Si (100) wafers. TiN thin layers were deposited to a thickness of 85 - 360 nm at deposition rates of Ti from 0.05 to 0.25nm/s. Argon ion energy was varied from 1.5 to 2.0 keV and the angle of ion beam incidence from 0 to 30 degrees. All samples were analyzed by Rutherford backscattering spectrometry (RBS). The changes in concentration profiles of titanium, nitrogen and ...silicon were determined with 900 keV He++ ion beam. The RBS spectra were analyzed with the demo version of WiNDF code. We have also used X-ray diffraction (XRD) for phase identification. The resistivity of samples was measured with four-point probe method. The results clearly show that TiN thin layer grows with (111) and (200) preferred orientation, depending on the IBAD deposition parameters. Consequently, the formation of TiN thin layers with well-controlled crystalline orientation occurs. Also, it was found that the variations in TiN film resistivity could be mainly attributed to the ion beam induced damage during the IBAD process.
Кључне речи:
nitride / RBS / thin film / XRDИзвор:
Materials Science Forum, 2006, 518, 155-160Напомена:
- Recent Developments in Advanced Materials and Processes, 7th Conference of the Yugoslav-Materials-Research-Society (Yu-MRS), Sep 12-16, 2005, Herceg Novi, Montenegro
DOI: 10.4028/www.scientific.net/MSF.518.155
ISSN: 0255-5476
WoS: 000239351800027
Scopus: 2-s2.0-37849043604
Колекције
Институција/група
VinčaTY - JOUR AU - Milinović, Velimir AU - Milosavljević, Momir AU - Popović, Maja AU - Novaković, Mirjana M. AU - Peruško, Davor AU - Radović, Ivan AU - Bibić, Nataša M. PY - 2006 UR - https://vinar.vin.bg.ac.rs/handle/123456789/6600 AB - In this paper we present a study of the formation of TiN thin films during the IBAD process. We have analyzed the effects of process parameters such as Ar+ ion energy, ion incident angle, Ti evaporation rates and partial pressure of N-2 on preferred orientation and resistivity of TiN layers. TiN thin films were grown by evaporation of Ti in the presence of N-2 and simultaneously bombarded with Ar+ ions. Base pressure in the IBAD chamber was 1(.)10(-6) mbar. The partial pressure of Ar during deposition was (3.1 - 6.6)(.)10(-6) mbar and partial pressure of N-2 was 6.0(.)10(-6) - 1.1(.)10(-5) mbar. The substrates used were Si (100) wafers. TiN thin layers were deposited to a thickness of 85 - 360 nm at deposition rates of Ti from 0.05 to 0.25nm/s. Argon ion energy was varied from 1.5 to 2.0 keV and the angle of ion beam incidence from 0 to 30 degrees. All samples were analyzed by Rutherford backscattering spectrometry (RBS). The changes in concentration profiles of titanium, nitrogen and silicon were determined with 900 keV He++ ion beam. The RBS spectra were analyzed with the demo version of WiNDF code. We have also used X-ray diffraction (XRD) for phase identification. The resistivity of samples was measured with four-point probe method. The results clearly show that TiN thin layer grows with (111) and (200) preferred orientation, depending on the IBAD deposition parameters. Consequently, the formation of TiN thin layers with well-controlled crystalline orientation occurs. Also, it was found that the variations in TiN film resistivity could be mainly attributed to the ion beam induced damage during the IBAD process. T2 - Materials Science Forum T1 - Ion beam assisted deposition of TiN thin films on Si substrate VL - 518 SP - 155 EP - 160 DO - 10.4028/www.scientific.net/MSF.518.155 ER -
@article{ author = "Milinović, Velimir and Milosavljević, Momir and Popović, Maja and Novaković, Mirjana M. and Peruško, Davor and Radović, Ivan and Bibić, Nataša M.", year = "2006", abstract = "In this paper we present a study of the formation of TiN thin films during the IBAD process. We have analyzed the effects of process parameters such as Ar+ ion energy, ion incident angle, Ti evaporation rates and partial pressure of N-2 on preferred orientation and resistivity of TiN layers. TiN thin films were grown by evaporation of Ti in the presence of N-2 and simultaneously bombarded with Ar+ ions. Base pressure in the IBAD chamber was 1(.)10(-6) mbar. The partial pressure of Ar during deposition was (3.1 - 6.6)(.)10(-6) mbar and partial pressure of N-2 was 6.0(.)10(-6) - 1.1(.)10(-5) mbar. The substrates used were Si (100) wafers. TiN thin layers were deposited to a thickness of 85 - 360 nm at deposition rates of Ti from 0.05 to 0.25nm/s. Argon ion energy was varied from 1.5 to 2.0 keV and the angle of ion beam incidence from 0 to 30 degrees. All samples were analyzed by Rutherford backscattering spectrometry (RBS). The changes in concentration profiles of titanium, nitrogen and silicon were determined with 900 keV He++ ion beam. The RBS spectra were analyzed with the demo version of WiNDF code. We have also used X-ray diffraction (XRD) for phase identification. The resistivity of samples was measured with four-point probe method. The results clearly show that TiN thin layer grows with (111) and (200) preferred orientation, depending on the IBAD deposition parameters. Consequently, the formation of TiN thin layers with well-controlled crystalline orientation occurs. Also, it was found that the variations in TiN film resistivity could be mainly attributed to the ion beam induced damage during the IBAD process.", journal = "Materials Science Forum", title = "Ion beam assisted deposition of TiN thin films on Si substrate", volume = "518", pages = "155-160", doi = "10.4028/www.scientific.net/MSF.518.155" }
Milinović, V., Milosavljević, M., Popović, M., Novaković, M. M., Peruško, D., Radović, I.,& Bibić, N. M.. (2006). Ion beam assisted deposition of TiN thin films on Si substrate. in Materials Science Forum, 518, 155-160. https://doi.org/10.4028/www.scientific.net/MSF.518.155
Milinović V, Milosavljević M, Popović M, Novaković MM, Peruško D, Radović I, Bibić NM. Ion beam assisted deposition of TiN thin films on Si substrate. in Materials Science Forum. 2006;518:155-160. doi:10.4028/www.scientific.net/MSF.518.155 .
Milinović, Velimir, Milosavljević, Momir, Popović, Maja, Novaković, Mirjana M., Peruško, Davor, Radović, Ivan, Bibić, Nataša M., "Ion beam assisted deposition of TiN thin films on Si substrate" in Materials Science Forum, 518 (2006):155-160, https://doi.org/10.4028/www.scientific.net/MSF.518.155 . .