Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation
Homewood, Kevin P.
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The effects of argon ion irradiation on structural changes in Ta/Ti multilayers deposited on Si wafers were investigated. The starting structures consisted of sputter deposited 10 alternate Ta (similar to 23 nm) and Ti (similar to 17 nm) layers of a total thickness similar to 200 nm. They were irradiated at room temperature with 200 key Ar(+), to the fluences from 5 x 10(15) to 2 x 10(16) ions/cm(2). The projected ion range was around mid-depth of the multilayered structure, and maximum displacements per atom similar to 130. It was found that, despite of the relatively heavy ion irradiation, individual nanocrystalline Ta and Ti layers remain unmixed, keeping the same level of interface planarity. The changes observed in the mostly affected region are increase in lateral dimensions of crystal grains in individual layers, and incorporation of bubbles and defects that cause some stretching of the crystal lattice. Absence of interlayer mixing is assigned to Ta-Ti immiscibility (reaction en...thalpy Delta H(f) = +2 kJ/mol). It is estimated that up to similar to 5 at.% interface mixing induced directly by collision cascades could be compensated by dynamic demixing due to chemical driving forces in the temperature relaxation regime. The results can be interesting towards developing radiation tolerant materials based on multilayered structures. (C) 2011 Elsevier B.V. All rights reserved.
Кључне речи:Ta/Ti multilayers / Nanocrystalline structure / Ion implantation / Radiation tolerance
Извор:Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 2011, 269, 19, 2090-2097
- SPIRIT - Support of Public and Industrial Research using Ion Beam Technology (EU-227012)
- Физички процеси у синтези нових наноструктурних материјала (RS-171023)
- SILAMPS - Silicon integrated lasers and optical amplifiers (EU-226470)
- Slovenian Research Agency [P2-0082]