TY  - JOUR
AU  - Gloginjić, Marko
AU  - Erich, Marko
AU  - Kokkoris, Michael
AU  - Liarokapis, Efthymios
AU  - Fazinić, Stjepko
AU  - Karlušić, Marko
AU  - Tomić Luketić, Kristina
AU  - Petrović, Srđan M.
PY  - 2021
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/9858
AB  - The hexagonal silicon carbide (6H-SiC) is one of materials used in nuclear applications, and as such is exposed to crystal damage inducing by variety of energetic particles like neutrons. In this article the 6H-SiC crystal lattice damage was introduced by the 4 MeV C3+ and 4 MeV Si3+ channelling ion implantation at the room temperature. The implantation of C and Si ions (so called self-ions) to the set of different fluences, achieves a 6H-SiC crystal lattice damage more similar to what the exposure to neutrons would produce. The 6H-SiC crystal damage has been investigated by the Elastic Backscattering spectra taken in the channeling orientation (EBS/C). EBS/C spectra of the implanted 6H-SiC samples were taken with 1.725 MeV and 1.860 MeV protons. By fitting the EBS/C spectra, the quantitative 6H-SiC crystal damage depth profiles were obtained. Further, the cross section of crystal's implanted region has been scanned with the micro-Raman (μR) technique for a comparison. In this way, the qualitative analysis of a non-crystalline phase as a function of the crystal depth was independently determined. Additionally, a scanning electron microscopy (SEM) image was taken of the implanted crystal cross sections. The comparison of the crystal damage profiles obtained by fitting EBS/C spectra with the corresponding ones obtained with the μR and SEM techniques shows very good consistency between them.
T2  - Journal of Nuclear Materials
T1  - The quantitative 6H-SiC crystal damage depth profiling
VL  - 555
SP  - 153143
DO  - 10.1016/j.jnucmat.2021.153143
ER  - 

@article{
author = "Gloginjić, Marko and Erich, Marko and Kokkoris, Michael and Liarokapis, Efthymios and Fazinić, Stjepko and Karlušić, Marko and Tomić Luketić, Kristina and Petrović, Srđan M.",
year = "2021",
abstract = "The hexagonal silicon carbide (6H-SiC) is one of materials used in nuclear applications, and as such is exposed to crystal damage inducing by variety of energetic particles like neutrons. In this article the 6H-SiC crystal lattice damage was introduced by the 4 MeV C3+ and 4 MeV Si3+ channelling ion implantation at the room temperature. The implantation of C and Si ions (so called self-ions) to the set of different fluences, achieves a 6H-SiC crystal lattice damage more similar to what the exposure to neutrons would produce. The 6H-SiC crystal damage has been investigated by the Elastic Backscattering spectra taken in the channeling orientation (EBS/C). EBS/C spectra of the implanted 6H-SiC samples were taken with 1.725 MeV and 1.860 MeV protons. By fitting the EBS/C spectra, the quantitative 6H-SiC crystal damage depth profiles were obtained. Further, the cross section of crystal's implanted region has been scanned with the micro-Raman (μR) technique for a comparison. In this way, the qualitative analysis of a non-crystalline phase as a function of the crystal depth was independently determined. Additionally, a scanning electron microscopy (SEM) image was taken of the implanted crystal cross sections. The comparison of the crystal damage profiles obtained by fitting EBS/C spectra with the corresponding ones obtained with the μR and SEM techniques shows very good consistency between them.",
journal = "Journal of Nuclear Materials",
title = "The quantitative 6H-SiC crystal damage depth profiling",
volume = "555",
pages = "153143",
doi = "10.1016/j.jnucmat.2021.153143"
}

Gloginjić, M., Erich, M., Kokkoris, M., Liarokapis, E., Fazinić, S., Karlušić, M., Tomić Luketić, K.,& Petrović, S. M.. (2021). The quantitative 6H-SiC crystal damage depth profiling. in Journal of Nuclear Materials, 555, 153143.
https://doi.org/10.1016/j.jnucmat.2021.153143

Gloginjić M, Erich M, Kokkoris M, Liarokapis E, Fazinić S, Karlušić M, Tomić Luketić K, Petrović SM. The quantitative 6H-SiC crystal damage depth profiling. in Journal of Nuclear Materials. 2021;555:153143.
doi:10.1016/j.jnucmat.2021.153143 .

Gloginjić, Marko, Erich, Marko, Kokkoris, Michael, Liarokapis, Efthymios, Fazinić, Stjepko, Karlušić, Marko, Tomić Luketić, Kristina, Petrović, Srđan M., "The quantitative 6H-SiC crystal damage depth profiling" in Journal of Nuclear Materials, 555 (2021):153143,
https://doi.org/10.1016/j.jnucmat.2021.153143 . .

TY  - CONF
AU  - Kokkoris, Michael
AU  - Androulakaki, Effrossyni G.
AU  - Czyzycki, Mateusz
AU  - Erich, Marko
AU  - Karydas, Andreas G.
AU  - Leani, Juan J.
AU  - Migliori, Alessandro
AU  - Ntemou, Eleni
AU  - Paneta, Valentina
AU  - Petrović, Srđan M.
PY  - 2019
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/8396
AB  - Synchrotron-radiation based techniques have recently emerged as serious competitors to traditional nuclear analytical ones, not only in the characterization of various materials, but also when the depth profiling of ultra-thin surface layers is concerned. The main goal of the present work was to investigate the applicability of Grazing Incidence X-Ray Fluorescence (GIXRF) and Rutherford/Elastic Backscattering Spectrometry (RBS/EBS) techniques with respect to the accurate quantitative determination of the retained doses of Ar ions deep implanted in random direction of Si [1 1 1] polished crystalline wafers. RBS/EBS measurements with protons and deuterons were taken along with GIXRF ones, the results were compared and an attempt was made to explain the occurring similarities and differences, along with the advantages and weaknesses of each applied analytical technique.
C3  - Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
T1  - Argon ions deeply implanted in silicon studied by Rutherford/Elastic Backscattering and Grazing Incidence X-ray Fluorescence spectroscopy
VL  - 450
SP  - 144
EP  - 148
DO  - 10.1016/j.nimb.2018.08.048
ER  - 

@conference{
author = "Kokkoris, Michael and Androulakaki, Effrossyni G. and Czyzycki, Mateusz and Erich, Marko and Karydas, Andreas G. and Leani, Juan J. and Migliori, Alessandro and Ntemou, Eleni and Paneta, Valentina and Petrović, Srđan M.",
year = "2019",
abstract = "Synchrotron-radiation based techniques have recently emerged as serious competitors to traditional nuclear analytical ones, not only in the characterization of various materials, but also when the depth profiling of ultra-thin surface layers is concerned. The main goal of the present work was to investigate the applicability of Grazing Incidence X-Ray Fluorescence (GIXRF) and Rutherford/Elastic Backscattering Spectrometry (RBS/EBS) techniques with respect to the accurate quantitative determination of the retained doses of Ar ions deep implanted in random direction of Si [1 1 1] polished crystalline wafers. RBS/EBS measurements with protons and deuterons were taken along with GIXRF ones, the results were compared and an attempt was made to explain the occurring similarities and differences, along with the advantages and weaknesses of each applied analytical technique.",
journal = "Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms",
title = "Argon ions deeply implanted in silicon studied by Rutherford/Elastic Backscattering and Grazing Incidence X-ray Fluorescence spectroscopy",
volume = "450",
pages = "144-148",
doi = "10.1016/j.nimb.2018.08.048"
}

Kokkoris, M., Androulakaki, E. G., Czyzycki, M., Erich, M., Karydas, A. G., Leani, J. J., Migliori, A., Ntemou, E., Paneta, V.,& Petrović, S. M.. (2019). Argon ions deeply implanted in silicon studied by Rutherford/Elastic Backscattering and Grazing Incidence X-ray Fluorescence spectroscopy. in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 450, 144-148.
https://doi.org/10.1016/j.nimb.2018.08.048

Kokkoris M, Androulakaki EG, Czyzycki M, Erich M, Karydas AG, Leani JJ, Migliori A, Ntemou E, Paneta V, Petrović SM. Argon ions deeply implanted in silicon studied by Rutherford/Elastic Backscattering and Grazing Incidence X-ray Fluorescence spectroscopy. in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 2019;450:144-148.
doi:10.1016/j.nimb.2018.08.048 .

Kokkoris, Michael, Androulakaki, Effrossyni G., Czyzycki, Mateusz, Erich, Marko, Karydas, Andreas G., Leani, Juan J., Migliori, Alessandro, Ntemou, Eleni, Paneta, Valentina, Petrović, Srđan M., "Argon ions deeply implanted in silicon studied by Rutherford/Elastic Backscattering and Grazing Incidence X-ray Fluorescence spectroscopy" in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 450 (2019):144-148,
https://doi.org/10.1016/j.nimb.2018.08.048 . .

TY  - JOUR
AU  - Flessa, Aikaterini
AU  - Ntemou, Eleni
AU  - Kokkoris, Michael
AU  - Liarokapis, Efthymios
AU  - Gloginjić, Marko
AU  - Petrović, Srđan M.
AU  - Erich, Marko
AU  - Fazinić, Stjepko
AU  - Karlušić, Marko
AU  - Tomić, Kristina
PY  - 2019
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/8439
AB  - A 6H-SiC single crystal implanted in channeling mode by 4-MeV C+3 and Si+3 ions at various doping levels has been examined by scanning electron microscopy (SEM) and micro-Raman spectroscopy in order to study the lattice distortions inflicted by the impinging ions. C ions create zones of strongly damaged regions, parallel to the front face of the wafer with width increasing with the amount of doping. As expected, Si has induced considerably more lattice distortions than C, and more than one order of magnitude less doping induces apparently the same effect as C. Despite the large laser spot size compared with the boundaries of the distorted regions, micro-Raman data provided results agreeing with the SEM pictures and the Monte Carlo calculations using the SRIM-2013 software. From the evolution of the crystalline peaks in the Raman spectra obtained across the damaged area, one can conclude that the impinging ions do not accommodate as defects in the lattice but mostly displace the ions breaking the bonds and destroying the long range order. The spatial correlation model that takes into consideration the intensity variation at the laser spot and the anticipated from Monte Carlo calculations for the collision events can reproduce the trend of the strong transversal optical phonon width indicating nanocrystallites of a few nanometers size in the most damaged area. © 2019 John Wiley & Sons, Ltd.
T2  - Journal of Raman Spectroscopy
T1  - Raman mapping of 4‐MeV C and Si channeling implantation of 6H‐SiC
VL  - 50
IS  - 8
SP  - 1186
EP  - 1196
DO  - 10.1002/jrs.5629
ER  - 

@article{
author = "Flessa, Aikaterini and Ntemou, Eleni and Kokkoris, Michael and Liarokapis, Efthymios and Gloginjić, Marko and Petrović, Srđan M. and Erich, Marko and Fazinić, Stjepko and Karlušić, Marko and Tomić, Kristina",
year = "2019",
abstract = "A 6H-SiC single crystal implanted in channeling mode by 4-MeV C+3 and Si+3 ions at various doping levels has been examined by scanning electron microscopy (SEM) and micro-Raman spectroscopy in order to study the lattice distortions inflicted by the impinging ions. C ions create zones of strongly damaged regions, parallel to the front face of the wafer with width increasing with the amount of doping. As expected, Si has induced considerably more lattice distortions than C, and more than one order of magnitude less doping induces apparently the same effect as C. Despite the large laser spot size compared with the boundaries of the distorted regions, micro-Raman data provided results agreeing with the SEM pictures and the Monte Carlo calculations using the SRIM-2013 software. From the evolution of the crystalline peaks in the Raman spectra obtained across the damaged area, one can conclude that the impinging ions do not accommodate as defects in the lattice but mostly displace the ions breaking the bonds and destroying the long range order. The spatial correlation model that takes into consideration the intensity variation at the laser spot and the anticipated from Monte Carlo calculations for the collision events can reproduce the trend of the strong transversal optical phonon width indicating nanocrystallites of a few nanometers size in the most damaged area. © 2019 John Wiley & Sons, Ltd.",
journal = "Journal of Raman Spectroscopy",
title = "Raman mapping of 4‐MeV C and Si channeling implantation of 6H‐SiC",
volume = "50",
number = "8",
pages = "1186-1196",
doi = "10.1002/jrs.5629"
}

Flessa, A., Ntemou, E., Kokkoris, M., Liarokapis, E., Gloginjić, M., Petrović, S. M., Erich, M., Fazinić, S., Karlušić, M.,& Tomić, K.. (2019). Raman mapping of 4‐MeV C and Si channeling implantation of 6H‐SiC. in Journal of Raman Spectroscopy, 50(8), 1186-1196.
https://doi.org/10.1002/jrs.5629

Flessa A, Ntemou E, Kokkoris M, Liarokapis E, Gloginjić M, Petrović SM, Erich M, Fazinić S, Karlušić M, Tomić K. Raman mapping of 4‐MeV C and Si channeling implantation of 6H‐SiC. in Journal of Raman Spectroscopy. 2019;50(8):1186-1196.
doi:10.1002/jrs.5629 .

Flessa, Aikaterini, Ntemou, Eleni, Kokkoris, Michael, Liarokapis, Efthymios, Gloginjić, Marko, Petrović, Srđan M., Erich, Marko, Fazinić, Stjepko, Karlušić, Marko, Tomić, Kristina, "Raman mapping of 4‐MeV C and Si channeling implantation of 6H‐SiC" in Journal of Raman Spectroscopy, 50, no. 8 (2019):1186-1196,
https://doi.org/10.1002/jrs.5629 . .

TY  - JOUR
PY  - 2018
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/7586
AB  - This work reports on the induced diamond crystal amorphization by 4 MeV carbon ions implanted in the < 1 0 0 > oriented crystal and its determination by application of RBS/C and EBS/C techniques. The spectra from the implanted samples were recorded for 1.2, 1.5, 1.75 and 1.9 MeV protons. For the two latter ones the strong resonance of the nuclear elastic scattering (12)c(p,p(0))C-12 at 1.737 MeV was explored. The backscattering channeling spectra were successfully fitted and the ion beam induced crystal amorphization depth profile was determined using a phenomenological approach, which is based on the properly defined Gompertz type dechanneling functions for protons in the < 1 0 0 > diamond crystal channels and the introduction of the concept of ion beam amorphization, which is implemented through our newly developed computer code CSIM.
T2  - Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms
T1  - Channeling implantation of high energy carbon ions in a diamond crystal: Determination of the induced crystal amorphization
VL  - 416
SP  - 89
EP  - 93
DO  - 10.1016/j.nimb.2017.12.001
ER  - 

@article{
year = "2018",
abstract = "This work reports on the induced diamond crystal amorphization by 4 MeV carbon ions implanted in the < 1 0 0 > oriented crystal and its determination by application of RBS/C and EBS/C techniques. The spectra from the implanted samples were recorded for 1.2, 1.5, 1.75 and 1.9 MeV protons. For the two latter ones the strong resonance of the nuclear elastic scattering (12)c(p,p(0))C-12 at 1.737 MeV was explored. The backscattering channeling spectra were successfully fitted and the ion beam induced crystal amorphization depth profile was determined using a phenomenological approach, which is based on the properly defined Gompertz type dechanneling functions for protons in the < 1 0 0 > diamond crystal channels and the introduction of the concept of ion beam amorphization, which is implemented through our newly developed computer code CSIM.",
journal = "Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms",
title = "Channeling implantation of high energy carbon ions in a diamond crystal: Determination of the induced crystal amorphization",
volume = "416",
pages = "89-93",
doi = "10.1016/j.nimb.2017.12.001"
}

(2018). Channeling implantation of high energy carbon ions in a diamond crystal: Determination of the induced crystal amorphization. in Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 416, 89-93.
https://doi.org/10.1016/j.nimb.2017.12.001

Channeling implantation of high energy carbon ions in a diamond crystal: Determination of the induced crystal amorphization. in Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms. 2018;416:89-93.
doi:10.1016/j.nimb.2017.12.001 .

"Channeling implantation of high energy carbon ions in a diamond crystal: Determination of the induced crystal amorphization" in Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 416 (2018):89-93,
https://doi.org/10.1016/j.nimb.2017.12.001 . .

TY  - JOUR
AU  - Erich, Marko
AU  - Kokkoris, Michael
AU  - Fazinić, Stjepko
AU  - Petrović, Srđan M.
PY  - 2016
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/1186
AB  - In the present work, elastic backscattering channeling spectra, EBS/C, of protons in a (100) diamond crystal were experimentally and theoretically studied via a new computer simulation code. Proton incident energies for EBS/C spectra were in the energy range from 1.0 MeV to 1.9 MeV. The energy range was chosen in order to explore a distinct strong resonance of the C-12(p,p(0))C-12 elastic scattering at 1737 key. The computer simulation code applied for the fitting of the experimental spectra in the random mode was compared with the corresponding SIMNRA results. In the channeling mode, it assumes a Gompertz type sigmoidal dechanneling function, which has two fitting parameters, x(c), and k, the dechanneling range and rate, respectively. It also uses a, ratio of the channeling to random energy losses, as a fitting parameter. It was observed that x(c) increases, k decreases and a stays relatively constant with the proton incident energy. These observations confirm the physical interpretation of the fitting parameters. Also, they constitute the basics for the further development of the code for the quantification of induced amorphization and depth profiling of implanted ions.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - EBS/C proton spectra from a virgin diamond crystal
VL  - 381
SP  - 96
EP  - 102
DO  - 10.1016/j.nimb.2016.05.030
ER  - 

@article{
author = "Erich, Marko and Kokkoris, Michael and Fazinić, Stjepko and Petrović, Srđan M.",
year = "2016",
abstract = "In the present work, elastic backscattering channeling spectra, EBS/C, of protons in a (100) diamond crystal were experimentally and theoretically studied via a new computer simulation code. Proton incident energies for EBS/C spectra were in the energy range from 1.0 MeV to 1.9 MeV. The energy range was chosen in order to explore a distinct strong resonance of the C-12(p,p(0))C-12 elastic scattering at 1737 key. The computer simulation code applied for the fitting of the experimental spectra in the random mode was compared with the corresponding SIMNRA results. In the channeling mode, it assumes a Gompertz type sigmoidal dechanneling function, which has two fitting parameters, x(c), and k, the dechanneling range and rate, respectively. It also uses a, ratio of the channeling to random energy losses, as a fitting parameter. It was observed that x(c) increases, k decreases and a stays relatively constant with the proton incident energy. These observations confirm the physical interpretation of the fitting parameters. Also, they constitute the basics for the further development of the code for the quantification of induced amorphization and depth profiling of implanted ions.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "EBS/C proton spectra from a virgin diamond crystal",
volume = "381",
pages = "96-102",
doi = "10.1016/j.nimb.2016.05.030"
}

Erich, M., Kokkoris, M., Fazinić, S.,& Petrović, S. M.. (2016). EBS/C proton spectra from a virgin diamond crystal. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 381, 96-102.
https://doi.org/10.1016/j.nimb.2016.05.030

Erich M, Kokkoris M, Fazinić S, Petrović SM. EBS/C proton spectra from a virgin diamond crystal. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2016;381:96-102.
doi:10.1016/j.nimb.2016.05.030 .

Erich, Marko, Kokkoris, Michael, Fazinić, Stjepko, Petrović, Srđan M., "EBS/C proton spectra from a virgin diamond crystal" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 381 (2016):96-102,
https://doi.org/10.1016/j.nimb.2016.05.030 . .

TY  - JOUR
AU  - Kopsalis, Ioannis
AU  - Paneta, Valentina
AU  - Kokkoris, Michael
AU  - Liarokapis, Efthymios
AU  - Erich, Marko
AU  - Petrović, Srđan M.
AU  - Fazinić, Stjepko
AU  - Tadić, Tonči
PY  - 2014
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/158
AB  - The effect of ion implantation (4MeV(12)C(2+), 5MeV(16)O(2+), and 8MeV(28)Si(2+)) on [110] silicon wafers in channeling and random orientation is investigated by micro-Raman spectroscopy. The profiles were measured using Scanning Electron Microscope (SEM) showing that the ions were penetrating deeper inside the wafer in the channeling case creating a 1-2 mu m wide strongly modified region and agreeing with the d-nuclear reaction analysis measurements. Micro-Raman spectroscopy was employed for the assessment of the lattice damage, probing the side surface of the cleaved wafers at submicron step. The phonon modifications show strong lattice distortions in zones parallel to the front surface of the wafers and at depths, which agree with the results of the characterization techniques. In these strongly damaged zones, there is a substantial reduction in the phonon intensity, a small shift in wavenumber position, and a large increase in the phonon width. On the basis of a modification of the phonon confinement model that takes under consideration the laser beam profile, the reduction in intensity of scattered light, and the nanocrystallite size distribution from the simulation of the lattice displacements, the main characteristics of the Raman spectra could be reproduced for the random C and O implantations. The results indicate that at a critical doping level, the induced defects and lattice distortions relax by breaking the silicon single crystal into nanocrystallites, thus creating the observed zones of strongly distorted lattice.
T2  - Journal of Raman Spectroscopy
T1  - Probing high-energy ion-implanted silicon by micro-Raman spectroscopy
VL  - 45
IS  - 8
SP  - 650
EP  - 656
DO  - 10.1002/jrs.4507
ER  - 

@article{
author = "Kopsalis, Ioannis and Paneta, Valentina and Kokkoris, Michael and Liarokapis, Efthymios and Erich, Marko and Petrović, Srđan M. and Fazinić, Stjepko and Tadić, Tonči",
year = "2014",
abstract = "The effect of ion implantation (4MeV(12)C(2+), 5MeV(16)O(2+), and 8MeV(28)Si(2+)) on [110] silicon wafers in channeling and random orientation is investigated by micro-Raman spectroscopy. The profiles were measured using Scanning Electron Microscope (SEM) showing that the ions were penetrating deeper inside the wafer in the channeling case creating a 1-2 mu m wide strongly modified region and agreeing with the d-nuclear reaction analysis measurements. Micro-Raman spectroscopy was employed for the assessment of the lattice damage, probing the side surface of the cleaved wafers at submicron step. The phonon modifications show strong lattice distortions in zones parallel to the front surface of the wafers and at depths, which agree with the results of the characterization techniques. In these strongly damaged zones, there is a substantial reduction in the phonon intensity, a small shift in wavenumber position, and a large increase in the phonon width. On the basis of a modification of the phonon confinement model that takes under consideration the laser beam profile, the reduction in intensity of scattered light, and the nanocrystallite size distribution from the simulation of the lattice displacements, the main characteristics of the Raman spectra could be reproduced for the random C and O implantations. The results indicate that at a critical doping level, the induced defects and lattice distortions relax by breaking the silicon single crystal into nanocrystallites, thus creating the observed zones of strongly distorted lattice.",
journal = "Journal of Raman Spectroscopy",
title = "Probing high-energy ion-implanted silicon by micro-Raman spectroscopy",
volume = "45",
number = "8",
pages = "650-656",
doi = "10.1002/jrs.4507"
}

Kopsalis, I., Paneta, V., Kokkoris, M., Liarokapis, E., Erich, M., Petrović, S. M., Fazinić, S.,& Tadić, T.. (2014). Probing high-energy ion-implanted silicon by micro-Raman spectroscopy. in Journal of Raman Spectroscopy, 45(8), 650-656.
https://doi.org/10.1002/jrs.4507

Kopsalis I, Paneta V, Kokkoris M, Liarokapis E, Erich M, Petrović SM, Fazinić S, Tadić T. Probing high-energy ion-implanted silicon by micro-Raman spectroscopy. in Journal of Raman Spectroscopy. 2014;45(8):650-656.
doi:10.1002/jrs.4507 .

Kopsalis, Ioannis, Paneta, Valentina, Kokkoris, Michael, Liarokapis, Efthymios, Erich, Marko, Petrović, Srđan M., Fazinić, Stjepko, Tadić, Tonči, "Probing high-energy ion-implanted silicon by micro-Raman spectroscopy" in Journal of Raman Spectroscopy, 45, no. 8 (2014):650-656,
https://doi.org/10.1002/jrs.4507 . .

TY  - JOUR
AU  - Paneta, Valentina
AU  - Erich, Marko
AU  - Fazinić, Stjepko
AU  - Kokkoris, Michael
AU  - Kopsalis, Ioannis
AU  - Petrović, Srđan M.
AU  - Tadić, Tonči
PY  - 2014
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5885
AB  - Ion implantation is one of the most important techniques used in the silicon-based semiconductor industry. Using the ion axial channeling effect, which occurs when an ion beam is oriented along a crystallographic axis, it is theoretically possible to implant ions deeper in the crystal, in comparison with the random ion beam-solid orientation, while - at the same time - minimizing the induced crystal lattice damage. In the present work, 4 MeV C-12(2+) and 5 MeV O-16(2+) ions were implanted in high-purity [1 1 0] Si crystal wafers at fluences of the order of similar to 10(17) particles/cm(2), in both the channeling and random orientations. The resulting profiles were measured using d-NRA, i.e. implementing the C-12(d,p(0)) and O-16(d,p(0),alpha(0)) reactions respectively, at E-d,E-lab = 1.2-1.4 MeV. The results were validated using SEM (Scanning Electron Microscopy), while the extent of crystalline damage was monitored during the implantation via RBS/C (Rutherford Backscattering Spectrometry/Channeling) spectra. The resulting profiles seem to be in good agreement with those obtained in the past for fluorine and nitrogen ions implanted in silicon, and clearly demonstrate the capabilities of high-energy channeling implantations, as well as, the accuracy of d-NRA (Nuclear Reaction Analysis) profiling measurements.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Investigation of deep implanted carbon and oxygen channeling profiles in [110] silicon, using d-NRA and SEM
VL  - 320
SP  - 6
EP  - 11
DO  - 10.1016/j.nimb.2013.11.020
ER  - 

@article{
author = "Paneta, Valentina and Erich, Marko and Fazinić, Stjepko and Kokkoris, Michael and Kopsalis, Ioannis and Petrović, Srđan M. and Tadić, Tonči",
year = "2014",
abstract = "Ion implantation is one of the most important techniques used in the silicon-based semiconductor industry. Using the ion axial channeling effect, which occurs when an ion beam is oriented along a crystallographic axis, it is theoretically possible to implant ions deeper in the crystal, in comparison with the random ion beam-solid orientation, while - at the same time - minimizing the induced crystal lattice damage. In the present work, 4 MeV C-12(2+) and 5 MeV O-16(2+) ions were implanted in high-purity [1 1 0] Si crystal wafers at fluences of the order of similar to 10(17) particles/cm(2), in both the channeling and random orientations. The resulting profiles were measured using d-NRA, i.e. implementing the C-12(d,p(0)) and O-16(d,p(0),alpha(0)) reactions respectively, at E-d,E-lab = 1.2-1.4 MeV. The results were validated using SEM (Scanning Electron Microscopy), while the extent of crystalline damage was monitored during the implantation via RBS/C (Rutherford Backscattering Spectrometry/Channeling) spectra. The resulting profiles seem to be in good agreement with those obtained in the past for fluorine and nitrogen ions implanted in silicon, and clearly demonstrate the capabilities of high-energy channeling implantations, as well as, the accuracy of d-NRA (Nuclear Reaction Analysis) profiling measurements.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Investigation of deep implanted carbon and oxygen channeling profiles in [110] silicon, using d-NRA and SEM",
volume = "320",
pages = "6-11",
doi = "10.1016/j.nimb.2013.11.020"
}

Paneta, V., Erich, M., Fazinić, S., Kokkoris, M., Kopsalis, I., Petrović, S. M.,& Tadić, T.. (2014). Investigation of deep implanted carbon and oxygen channeling profiles in [110] silicon, using d-NRA and SEM. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 320, 6-11.
https://doi.org/10.1016/j.nimb.2013.11.020

Paneta V, Erich M, Fazinić S, Kokkoris M, Kopsalis I, Petrović SM, Tadić T. Investigation of deep implanted carbon and oxygen channeling profiles in [110] silicon, using d-NRA and SEM. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2014;320:6-11.
doi:10.1016/j.nimb.2013.11.020 .

Paneta, Valentina, Erich, Marko, Fazinić, Stjepko, Kokkoris, Michael, Kopsalis, Ioannis, Petrović, Srđan M., Tadić, Tonči, "Investigation of deep implanted carbon and oxygen channeling profiles in [110] silicon, using d-NRA and SEM" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 320 (2014):6-11,
https://doi.org/10.1016/j.nimb.2013.11.020 . .

TY  - JOUR
AU  - Erich, Marko
AU  - Petrović, Srđan M.
AU  - Kokkoris, Michael
AU  - Liarokapis, Efthymios
AU  - Antonakos, Anastasios
AU  - Telečki, Igor N.
PY  - 2013
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5393
AB  - In this work, we study the silicon amorphization dependence on the crystal depth induced by 6-MeV Al2+ ions implanted in the LT 110 GT and randomly oriented silicon crystal channels, which was not directly experimentally accessible in the previous similar high-energy ioncrystal implantation cases. Accordingly, the micro-Raman spectroscopy scanning measurements along the crystal transversal cross section of the ion implanted region were performed. The ion fluence was 10(17) particles/cm(2). The scanning steps were 0.2 and 0.3 mu m, for the channeling and random ion implantations, respectively. The obtained results are compared with the corresponding Rutherford backscattering spectra of 1.2-MeV protons in the random and channeling orientations measured during the channeling implantation. Additionally, scanning electron microscope picture was taken on the transversal cross section of the implanted region in the channeling implantation case. We show here that the obtained silicon amorphization maxima are in excellent agreement with the corresponding estimated maxima of the aluminum concentration in silicon. This clearly indicates that the used specific micro-Raman spectroscopy scanning technique can be successfully applied for the depth profiling of the crystal amorphization induced by high-energy ion implantation.
T2  - Journal of Raman Spectroscopy
T1  - Micro-Raman depth profiling of silicon amorphization induced by high-energy ion channeling implantation
VL  - 44
IS  - 3
SP  - 496
EP  - 500
DO  - 10.1002/jrs.4211
ER  - 

@article{
author = "Erich, Marko and Petrović, Srđan M. and Kokkoris, Michael and Liarokapis, Efthymios and Antonakos, Anastasios and Telečki, Igor N.",
year = "2013",
abstract = "In this work, we study the silicon amorphization dependence on the crystal depth induced by 6-MeV Al2+ ions implanted in the LT 110 GT and randomly oriented silicon crystal channels, which was not directly experimentally accessible in the previous similar high-energy ioncrystal implantation cases. Accordingly, the micro-Raman spectroscopy scanning measurements along the crystal transversal cross section of the ion implanted region were performed. The ion fluence was 10(17) particles/cm(2). The scanning steps were 0.2 and 0.3 mu m, for the channeling and random ion implantations, respectively. The obtained results are compared with the corresponding Rutherford backscattering spectra of 1.2-MeV protons in the random and channeling orientations measured during the channeling implantation. Additionally, scanning electron microscope picture was taken on the transversal cross section of the implanted region in the channeling implantation case. We show here that the obtained silicon amorphization maxima are in excellent agreement with the corresponding estimated maxima of the aluminum concentration in silicon. This clearly indicates that the used specific micro-Raman spectroscopy scanning technique can be successfully applied for the depth profiling of the crystal amorphization induced by high-energy ion implantation.",
journal = "Journal of Raman Spectroscopy",
title = "Micro-Raman depth profiling of silicon amorphization induced by high-energy ion channeling implantation",
volume = "44",
number = "3",
pages = "496-500",
doi = "10.1002/jrs.4211"
}

Erich, M., Petrović, S. M., Kokkoris, M., Liarokapis, E., Antonakos, A.,& Telečki, I. N.. (2013). Micro-Raman depth profiling of silicon amorphization induced by high-energy ion channeling implantation. in Journal of Raman Spectroscopy, 44(3), 496-500.
https://doi.org/10.1002/jrs.4211

Erich M, Petrović SM, Kokkoris M, Liarokapis E, Antonakos A, Telečki IN. Micro-Raman depth profiling of silicon amorphization induced by high-energy ion channeling implantation. in Journal of Raman Spectroscopy. 2013;44(3):496-500.
doi:10.1002/jrs.4211 .

Erich, Marko, Petrović, Srđan M., Kokkoris, Michael, Liarokapis, Efthymios, Antonakos, Anastasios, Telečki, Igor N., "Micro-Raman depth profiling of silicon amorphization induced by high-energy ion channeling implantation" in Journal of Raman Spectroscopy, 44, no. 3 (2013):496-500,
https://doi.org/10.1002/jrs.4211 . .

TY  - JOUR
AU  - Erich, Marko
AU  - Petrović, Srđan M.
AU  - Kokkoris, Michael
AU  - Lagoyannis, Anastasios
AU  - Paneta, Valentina
AU  - Harissopulos, S.
AU  - Telečki, Igor N.
PY  - 2012
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/4749
AB  - This work reports on the experimentally obtained depth profiles of 4 MeV N-14(2+) ions implanted in the (100), (110) and randomly oriented silicon crystals. The ion fluence was 10(17) particles/cm(2), The nitrogen depth profiling has been performed using the Nuclear Reaction Analysis (NRA) method, via the study of N-14(d,alpha(0))C-12 and N-14(d,alpha(1))C-12 nuclear reactions, and with the implementation of SRIM 2010 and SIMNRA computer simulation codes. For the randomly oriented silicon crystal, change of the density of silicon matrix and the nitrogen bubble formation have been proposed as the explanation for the difference between the experimental and simulated nitrogen depth profiles. During the implantation, the RBS/C spectra were measured on the nitrogen implanted and on the virgin crystal spots. These spectra provide information on the amorphization of the silicon crystals induced by the ion implantation.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Depth profiling of high energy nitrogen ions implanted in the (100), (110) and randomly oriented silicon crystals
VL  - 274
SP  - 87
EP  - 92
DO  - 10.1016/j.nimb.2011.12.008
ER  - 

@article{
author = "Erich, Marko and Petrović, Srđan M. and Kokkoris, Michael and Lagoyannis, Anastasios and Paneta, Valentina and Harissopulos, S. and Telečki, Igor N.",
year = "2012",
abstract = "This work reports on the experimentally obtained depth profiles of 4 MeV N-14(2+) ions implanted in the (100), (110) and randomly oriented silicon crystals. The ion fluence was 10(17) particles/cm(2), The nitrogen depth profiling has been performed using the Nuclear Reaction Analysis (NRA) method, via the study of N-14(d,alpha(0))C-12 and N-14(d,alpha(1))C-12 nuclear reactions, and with the implementation of SRIM 2010 and SIMNRA computer simulation codes. For the randomly oriented silicon crystal, change of the density of silicon matrix and the nitrogen bubble formation have been proposed as the explanation for the difference between the experimental and simulated nitrogen depth profiles. During the implantation, the RBS/C spectra were measured on the nitrogen implanted and on the virgin crystal spots. These spectra provide information on the amorphization of the silicon crystals induced by the ion implantation.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Depth profiling of high energy nitrogen ions implanted in the (100), (110) and randomly oriented silicon crystals",
volume = "274",
pages = "87-92",
doi = "10.1016/j.nimb.2011.12.008"
}

Erich, M., Petrović, S. M., Kokkoris, M., Lagoyannis, A., Paneta, V., Harissopulos, S.,& Telečki, I. N.. (2012). Depth profiling of high energy nitrogen ions implanted in the (100), (110) and randomly oriented silicon crystals. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 274, 87-92.
https://doi.org/10.1016/j.nimb.2011.12.008

Erich M, Petrović SM, Kokkoris M, Lagoyannis A, Paneta V, Harissopulos S, Telečki IN. Depth profiling of high energy nitrogen ions implanted in the (100), (110) and randomly oriented silicon crystals. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2012;274:87-92.
doi:10.1016/j.nimb.2011.12.008 .

Erich, Marko, Petrović, Srđan M., Kokkoris, Michael, Lagoyannis, Anastasios, Paneta, Valentina, Harissopulos, S., Telečki, Igor N., "Depth profiling of high energy nitrogen ions implanted in the (100), (110) and randomly oriented silicon crystals" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 274 (2012):87-92,
https://doi.org/10.1016/j.nimb.2011.12.008 . .

TY  - JOUR
AU  - Petrović, Srđan M.
AU  - Erich, Marko
AU  - Kokkoris, Michael
AU  - Nešković, Nebojša B.
PY  - 2007
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6651
AB  - In this work the energy dependences of the Gompertz type sigmoidal dechanneling function parameters for protons in LT 1 0 0 GT , LT 1 1 0 GT and LT 1 1 1 GT Si crystal channels is investigated theoretically. The proton energy range considered is between I and 10 MeV. The original dechanneling functions are generated using a realistic Monte Carlo computer simulation code. We show that the Gompertz type dechanneling function, having two parameters, I-c and k, representing the dechanneling range and rate, respectively, approximate accurately the original dechanneling function. It is also shown that the energy dependences of parameters I-c and k can be approximated by a linear function and a sum of two exponential functions, respectively. The results obtained can be used for accurate reproduction of experimental proton channeling spectra recorded in the backscattering geometry.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Gompertz type dechanneling functions for protons in 〈1 0 0〉, 〈1 1 0〉 and 〈1 1 1〉 Si crystal channels
VL  - 256
IS  - 1
SP  - 177
EP  - 181
DO  - 10.1016/j.nimb.2006.11.110
ER  - 

@article{
author = "Petrović, Srđan M. and Erich, Marko and Kokkoris, Michael and Nešković, Nebojša B.",
year = "2007",
abstract = "In this work the energy dependences of the Gompertz type sigmoidal dechanneling function parameters for protons in LT 1 0 0 GT , LT 1 1 0 GT and LT 1 1 1 GT Si crystal channels is investigated theoretically. The proton energy range considered is between I and 10 MeV. The original dechanneling functions are generated using a realistic Monte Carlo computer simulation code. We show that the Gompertz type dechanneling function, having two parameters, I-c and k, representing the dechanneling range and rate, respectively, approximate accurately the original dechanneling function. It is also shown that the energy dependences of parameters I-c and k can be approximated by a linear function and a sum of two exponential functions, respectively. The results obtained can be used for accurate reproduction of experimental proton channeling spectra recorded in the backscattering geometry.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Gompertz type dechanneling functions for protons in 〈1 0 0〉, 〈1 1 0〉 and 〈1 1 1〉 Si crystal channels",
volume = "256",
number = "1",
pages = "177-181",
doi = "10.1016/j.nimb.2006.11.110"
}

Petrović, S. M., Erich, M., Kokkoris, M.,& Nešković, N. B.. (2007). Gompertz type dechanneling functions for protons in 〈1 0 0〉, 〈1 1 0〉 and 〈1 1 1〉 Si crystal channels. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 256(1), 177-181.
https://doi.org/10.1016/j.nimb.2006.11.110

Petrović SM, Erich M, Kokkoris M, Nešković NB. Gompertz type dechanneling functions for protons in 〈1 0 0〉, 〈1 1 0〉 and 〈1 1 1〉 Si crystal channels. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2007;256(1):177-181.
doi:10.1016/j.nimb.2006.11.110 .

Petrović, Srđan M., Erich, Marko, Kokkoris, Michael, Nešković, Nebojša B., "Gompertz type dechanneling functions for protons in 〈1 0 0〉, 〈1 1 0〉 and 〈1 1 1〉 Si crystal channels" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 256, no. 1 (2007):177-181,
https://doi.org/10.1016/j.nimb.2006.11.110 . .

TY  - JOUR
AU  - Kokkoris, Michael
AU  - Perdikakis, Georgios
AU  - Kossionides, S
AU  - Petrović, Srđan M.
AU  - Vlastou, R.
AU  - Grotzschel, Rainer
PY  - 2004
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6449
AB  - In the present work, the energy spectra of protons channeled along the (0 0 0 1) axis of SiC polytype crystals (namely 4H and 6H) in the energy range E-P = 400-650 keV, in the backscattering geometry, were taken and analyzed. Computer simulations are in very good agreement with the measured spectra. The accurate reproduction of the experimental channeling spectra in the backscattering geometry is strongly based on the investigation of the correct dechanneling function and a, the ratio of the stopping powers in the aligned and random mode. In the present work, the applicability of a Gompertz type sigmoidal dechanneling function, with two parameters, k and x(c), which represent characteristic dechanneling rate and range, respectively, is examined, and the results are compared to the ones obtained in the past, concerning the same polytype structures, based on the assumption that the dechanneling of protons follows an exponential law, for the energy range E-P = 1.7-2.4 MeV.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - A study of the dechanneling of protons in SiC polytype crystals in the energy range Ep=400-650 keV
VL  - 219
SP  - 226
EP  - 231
DO  - 10.1016/j.nimb.2004.01.058
ER  - 

@article{
author = "Kokkoris, Michael and Perdikakis, Georgios and Kossionides, S and Petrović, Srđan M. and Vlastou, R. and Grotzschel, Rainer",
year = "2004",
abstract = "In the present work, the energy spectra of protons channeled along the (0 0 0 1) axis of SiC polytype crystals (namely 4H and 6H) in the energy range E-P = 400-650 keV, in the backscattering geometry, were taken and analyzed. Computer simulations are in very good agreement with the measured spectra. The accurate reproduction of the experimental channeling spectra in the backscattering geometry is strongly based on the investigation of the correct dechanneling function and a, the ratio of the stopping powers in the aligned and random mode. In the present work, the applicability of a Gompertz type sigmoidal dechanneling function, with two parameters, k and x(c), which represent characteristic dechanneling rate and range, respectively, is examined, and the results are compared to the ones obtained in the past, concerning the same polytype structures, based on the assumption that the dechanneling of protons follows an exponential law, for the energy range E-P = 1.7-2.4 MeV.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "A study of the dechanneling of protons in SiC polytype crystals in the energy range Ep=400-650 keV",
volume = "219",
pages = "226-231",
doi = "10.1016/j.nimb.2004.01.058"
}

Kokkoris, M., Perdikakis, G., Kossionides, S., Petrović, S. M., Vlastou, R.,& Grotzschel, R.. (2004). A study of the dechanneling of protons in SiC polytype crystals in the energy range Ep=400-650 keV. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 219, 226-231.
https://doi.org/10.1016/j.nimb.2004.01.058

Kokkoris M, Perdikakis G, Kossionides S, Petrović SM, Vlastou R, Grotzschel R. A study of the dechanneling of protons in SiC polytype crystals in the energy range Ep=400-650 keV. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2004;219:226-231.
doi:10.1016/j.nimb.2004.01.058 .

Kokkoris, Michael, Perdikakis, Georgios, Kossionides, S, Petrović, Srđan M., Vlastou, R., Grotzschel, Rainer, "A study of the dechanneling of protons in SiC polytype crystals in the energy range Ep=400-650 keV" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 219 (2004):226-231,
https://doi.org/10.1016/j.nimb.2004.01.058 . .

TY  - JOUR
AU  - Kokkoris, Michael
AU  - Perdikakis, Georgios
AU  - Kossionides, S
AU  - Petrović, Srđan M.
AU  - Simoen, Eddy Roger
PY  - 2003
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/2668
AB  - In the present work; the dechanneling of protons in Si [110] is studied combining theoretical Monte-Carlo and phenomenological simulation results in the energy range E-p = 1.8-2.4 MeV. The applicability of a Gompertz type sigmoidal dechanneling function, with two parameters, k and x(c), which represent characteristic dechanneling rate and range, respectively, is examined; yielding the successful reproduction of backscattering spectra of channeled protons along the Si [110] crystal axis. The results are compared to the ones obtained in the past for different beam - crystal orientation combinations and an attempt is made to explain the occurring similarities and discrepancies.
T2  - European Physical Journal B. Condensed Matter and Complex Systems
T1  - On the dechanneling of protons in Si [110]
VL  - 34
IS  - 3
SP  - 257
EP  - 263
DO  - 10.1140/epjb/e2003-00219-y
ER  - 

@article{
author = "Kokkoris, Michael and Perdikakis, Georgios and Kossionides, S and Petrović, Srđan M. and Simoen, Eddy Roger",
year = "2003",
abstract = "In the present work; the dechanneling of protons in Si [110] is studied combining theoretical Monte-Carlo and phenomenological simulation results in the energy range E-p = 1.8-2.4 MeV. The applicability of a Gompertz type sigmoidal dechanneling function, with two parameters, k and x(c), which represent characteristic dechanneling rate and range, respectively, is examined; yielding the successful reproduction of backscattering spectra of channeled protons along the Si [110] crystal axis. The results are compared to the ones obtained in the past for different beam - crystal orientation combinations and an attempt is made to explain the occurring similarities and discrepancies.",
journal = "European Physical Journal B. Condensed Matter and Complex Systems",
title = "On the dechanneling of protons in Si [110]",
volume = "34",
number = "3",
pages = "257-263",
doi = "10.1140/epjb/e2003-00219-y"
}

Kokkoris, M., Perdikakis, G., Kossionides, S., Petrović, S. M.,& Simoen, E. R.. (2003). On the dechanneling of protons in Si [110]. in European Physical Journal B. Condensed Matter and Complex Systems, 34(3), 257-263.
https://doi.org/10.1140/epjb/e2003-00219-y

Kokkoris M, Perdikakis G, Kossionides S, Petrović SM, Simoen ER. On the dechanneling of protons in Si [110]. in European Physical Journal B. Condensed Matter and Complex Systems. 2003;34(3):257-263.
doi:10.1140/epjb/e2003-00219-y .

Kokkoris, Michael, Perdikakis, Georgios, Kossionides, S, Petrović, Srđan M., Simoen, Eddy Roger, "On the dechanneling of protons in Si [110]" in European Physical Journal B. Condensed Matter and Complex Systems, 34, no. 3 (2003):257-263,
https://doi.org/10.1140/epjb/e2003-00219-y . .

TY  - JOUR
AU  - Petrović, Srđan M.
AU  - Korica, Sanja
AU  - Kokkoris, Michael
AU  - Nešković, Nebojša B.
PY  - 2002
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6334
AB  - In this study we analyze the angular distributions of Ne10+ ions channeled in the LT 100 GT Si crystals. The ion energy is 60 MeV and the crystal thickness is varied from 286 to 3435 nm. This thickness range corresponds to the reduced crystal thickness range from 0.5 to 6, i.e. from the second to the twelfth rainbow cycle. The angular distributions were obtained via the numerical solution of the ion equations of motion and the computer simulation method. The analysis shows that the angular distribution has a periodic behavior. We also analyze the transmission patterns corresponding to the angular distributions. These patterns should be compared to the experimental patterns obtainable by a two-dimensional position sensitive detector. We demonstrate that, when the ion beam divergence is sufficiently large, i.e. much larger than the critical angle for channeling, the channeling star effect occurs in the transmission patterns.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Angular distributions of ions channeled in the 〈1 0 0〉 Si crystals
VL  - 193
SP  - 152
EP  - 159
DO  - 10.1016/S0168-583X(02)00742-5
ER  - 

@article{
author = "Petrović, Srđan M. and Korica, Sanja and Kokkoris, Michael and Nešković, Nebojša B.",
year = "2002",
abstract = "In this study we analyze the angular distributions of Ne10+ ions channeled in the LT 100 GT Si crystals. The ion energy is 60 MeV and the crystal thickness is varied from 286 to 3435 nm. This thickness range corresponds to the reduced crystal thickness range from 0.5 to 6, i.e. from the second to the twelfth rainbow cycle. The angular distributions were obtained via the numerical solution of the ion equations of motion and the computer simulation method. The analysis shows that the angular distribution has a periodic behavior. We also analyze the transmission patterns corresponding to the angular distributions. These patterns should be compared to the experimental patterns obtainable by a two-dimensional position sensitive detector. We demonstrate that, when the ion beam divergence is sufficiently large, i.e. much larger than the critical angle for channeling, the channeling star effect occurs in the transmission patterns.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Angular distributions of ions channeled in the 〈1 0 0〉 Si crystals",
volume = "193",
pages = "152-159",
doi = "10.1016/S0168-583X(02)00742-5"
}

Petrović, S. M., Korica, S., Kokkoris, M.,& Nešković, N. B.. (2002). Angular distributions of ions channeled in the 〈1 0 0〉 Si crystals. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 193, 152-159.
https://doi.org/10.1016/S0168-583X(02)00742-5

Petrović SM, Korica S, Kokkoris M, Nešković NB. Angular distributions of ions channeled in the 〈1 0 0〉 Si crystals. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2002;193:152-159.
doi:10.1016/S0168-583X(02)00742-5 .

Petrović, Srđan M., Korica, Sanja, Kokkoris, Michael, Nešković, Nebojša B., "Angular distributions of ions channeled in the 〈1 0 0〉 Si crystals" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 193 (2002):152-159,
https://doi.org/10.1016/S0168-583X(02)00742-5 . .

TY  - JOUR
AU  - Kokkoris, Michael
AU  - Kossionides, S
AU  - Vlastou, R.
AU  - Aslanoglou, X.A.
AU  - Grotzschel, Rainer
AU  - Nsouli, Bilal
AU  - Kuznetsov, Andrej Yu
AU  - Petrović, Srđan M.
AU  - Paradellis, T.
PY  - 2001
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/2476
AB  - Energy spectra of protons channeling along the (0001) axis of several SiC polytype crystals (namely 4H, 6H, 15R, 21R) in the energy region E-p = 1.7-2.5 MeV, in the backscattering geometry, were taken and analyzed. Computer simulations based on the assumption that the dechanneling of protons follows an exponential law are in very good agreement with the measured spectra. The obtained results for the two crucial channeling parameters, gimel, the mean channeling distance, and, alpha, the ratio of the stopping powers in the aligned and random mode are compared for the different structures and an attempt is made to explain the occurring similarities as well as the differences, in order to evaluate the use of SiC polytypes as substrates in implantations and thin film depositions. An attempt is also made to correlate the results from the present work to the ones obtained in the past for simpler crystallographic structures, namely Si(100) and Si(111), as well as more complex ones, such as SiO2 (c-axis).
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Determination of parameters for channeling of protons in SiC polytype crystals in the backscattering geometry
VL  - 184
IS  - 3
SP  - 319
EP  - 326
DO  - 10.1016/S0168-583X(01)00727-3
ER  - 

@article{
author = "Kokkoris, Michael and Kossionides, S and Vlastou, R. and Aslanoglou, X.A. and Grotzschel, Rainer and Nsouli, Bilal and Kuznetsov, Andrej Yu and Petrović, Srđan M. and Paradellis, T.",
year = "2001",
abstract = "Energy spectra of protons channeling along the (0001) axis of several SiC polytype crystals (namely 4H, 6H, 15R, 21R) in the energy region E-p = 1.7-2.5 MeV, in the backscattering geometry, were taken and analyzed. Computer simulations based on the assumption that the dechanneling of protons follows an exponential law are in very good agreement with the measured spectra. The obtained results for the two crucial channeling parameters, gimel, the mean channeling distance, and, alpha, the ratio of the stopping powers in the aligned and random mode are compared for the different structures and an attempt is made to explain the occurring similarities as well as the differences, in order to evaluate the use of SiC polytypes as substrates in implantations and thin film depositions. An attempt is also made to correlate the results from the present work to the ones obtained in the past for simpler crystallographic structures, namely Si(100) and Si(111), as well as more complex ones, such as SiO2 (c-axis).",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Determination of parameters for channeling of protons in SiC polytype crystals in the backscattering geometry",
volume = "184",
number = "3",
pages = "319-326",
doi = "10.1016/S0168-583X(01)00727-3"
}

Kokkoris, M., Kossionides, S., Vlastou, R., Aslanoglou, X.A., Grotzschel, R., Nsouli, B., Kuznetsov, A. Y., Petrović, S. M.,& Paradellis, T.. (2001). Determination of parameters for channeling of protons in SiC polytype crystals in the backscattering geometry. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 184(3), 319-326.
https://doi.org/10.1016/S0168-583X(01)00727-3

Kokkoris M, Kossionides S, Vlastou R, Aslanoglou X, Grotzschel R, Nsouli B, Kuznetsov AY, Petrović SM, Paradellis T. Determination of parameters for channeling of protons in SiC polytype crystals in the backscattering geometry. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2001;184(3):319-326.
doi:10.1016/S0168-583X(01)00727-3 .

Kokkoris, Michael, Kossionides, S, Vlastou, R., Aslanoglou, X.A., Grotzschel, Rainer, Nsouli, Bilal, Kuznetsov, Andrej Yu, Petrović, Srđan M., Paradellis, T., "Determination of parameters for channeling of protons in SiC polytype crystals in the backscattering geometry" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 184, no. 3 (2001):319-326,
https://doi.org/10.1016/S0168-583X(01)00727-3 . .