The quantitative 6H-SiC crystal damage depth profiling
Само за регистроване кориснике
2021
Аутори
Gloginjić, MarkoErich, Marko
Kokkoris, Michael
Liarokapis, Efthymios
Fazinić, Stjepko
Karlušić, Marko
Tomić Luketić, Kristina
Petrović, Srđan M.
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
The hexagonal silicon carbide (6H-SiC) is one of materials used in nuclear applications, and as such is exposed to crystal damage inducing by variety of energetic particles like neutrons. In this article the 6H-SiC crystal lattice damage was introduced by the 4 MeV C3+ and 4 MeV Si3+ channelling ion implantation at the room temperature. The implantation of C and Si ions (so called self-ions) to the set of different fluences, achieves a 6H-SiC crystal lattice damage more similar to what the exposure to neutrons would produce. The 6H-SiC crystal damage has been investigated by the Elastic Backscattering spectra taken in the channeling orientation (EBS/C). EBS/C spectra of the implanted 6H-SiC samples were taken with 1.725 MeV and 1.860 MeV protons. By fitting the EBS/C spectra, the quantitative 6H-SiC crystal damage depth profiles were obtained. Further, the cross section of crystal's implanted region has been scanned with the micro-Raman (μR) technique for a comparison. In this way, the... qualitative analysis of a non-crystalline phase as a function of the crystal depth was independently determined. Additionally, a scanning electron microscopy (SEM) image was taken of the implanted crystal cross sections. The comparison of the crystal damage profiles obtained by fitting EBS/C spectra with the corresponding ones obtained with the μR and SEM techniques shows very good consistency between them.
Кључне речи:
6H-SiC / EBS / Quantitative crystal damage profilingИзвор:
Journal of Nuclear Materials, 2021, 555, 153143-Финансирање / пројекти:
- Ministry of Education, Science and Technological Development of the Republic of Serbia
- AIDA-2020 - Advanced European Infrastructures for Detectors at Accelerators (EU-H2020-654168)
- Croatian Science Foundation [MIOBICC 8127]
DOI: 10.1016/j.jnucmat.2021.153143
ISSN: 0022-3115
WoS: 000686062700011
Scopus: 2-s2.0-85108904284
Институција/група
VinčaTY - JOUR AU - Gloginjić, Marko AU - Erich, Marko AU - Kokkoris, Michael AU - Liarokapis, Efthymios AU - Fazinić, Stjepko AU - Karlušić, Marko AU - Tomić Luketić, Kristina AU - Petrović, Srđan M. PY - 2021 UR - https://vinar.vin.bg.ac.rs/handle/123456789/9858 AB - The hexagonal silicon carbide (6H-SiC) is one of materials used in nuclear applications, and as such is exposed to crystal damage inducing by variety of energetic particles like neutrons. In this article the 6H-SiC crystal lattice damage was introduced by the 4 MeV C3+ and 4 MeV Si3+ channelling ion implantation at the room temperature. The implantation of C and Si ions (so called self-ions) to the set of different fluences, achieves a 6H-SiC crystal lattice damage more similar to what the exposure to neutrons would produce. The 6H-SiC crystal damage has been investigated by the Elastic Backscattering spectra taken in the channeling orientation (EBS/C). EBS/C spectra of the implanted 6H-SiC samples were taken with 1.725 MeV and 1.860 MeV protons. By fitting the EBS/C spectra, the quantitative 6H-SiC crystal damage depth profiles were obtained. Further, the cross section of crystal's implanted region has been scanned with the micro-Raman (μR) technique for a comparison. In this way, the qualitative analysis of a non-crystalline phase as a function of the crystal depth was independently determined. Additionally, a scanning electron microscopy (SEM) image was taken of the implanted crystal cross sections. The comparison of the crystal damage profiles obtained by fitting EBS/C spectra with the corresponding ones obtained with the μR and SEM techniques shows very good consistency between them. T2 - Journal of Nuclear Materials T1 - The quantitative 6H-SiC crystal damage depth profiling VL - 555 SP - 153143 DO - 10.1016/j.jnucmat.2021.153143 ER -
@article{ author = "Gloginjić, Marko and Erich, Marko and Kokkoris, Michael and Liarokapis, Efthymios and Fazinić, Stjepko and Karlušić, Marko and Tomić Luketić, Kristina and Petrović, Srđan M.", year = "2021", abstract = "The hexagonal silicon carbide (6H-SiC) is one of materials used in nuclear applications, and as such is exposed to crystal damage inducing by variety of energetic particles like neutrons. In this article the 6H-SiC crystal lattice damage was introduced by the 4 MeV C3+ and 4 MeV Si3+ channelling ion implantation at the room temperature. The implantation of C and Si ions (so called self-ions) to the set of different fluences, achieves a 6H-SiC crystal lattice damage more similar to what the exposure to neutrons would produce. The 6H-SiC crystal damage has been investigated by the Elastic Backscattering spectra taken in the channeling orientation (EBS/C). EBS/C spectra of the implanted 6H-SiC samples were taken with 1.725 MeV and 1.860 MeV protons. By fitting the EBS/C spectra, the quantitative 6H-SiC crystal damage depth profiles were obtained. Further, the cross section of crystal's implanted region has been scanned with the micro-Raman (μR) technique for a comparison. In this way, the qualitative analysis of a non-crystalline phase as a function of the crystal depth was independently determined. Additionally, a scanning electron microscopy (SEM) image was taken of the implanted crystal cross sections. The comparison of the crystal damage profiles obtained by fitting EBS/C spectra with the corresponding ones obtained with the μR and SEM techniques shows very good consistency between them.", journal = "Journal of Nuclear Materials", title = "The quantitative 6H-SiC crystal damage depth profiling", volume = "555", pages = "153143", doi = "10.1016/j.jnucmat.2021.153143" }
Gloginjić, M., Erich, M., Kokkoris, M., Liarokapis, E., Fazinić, S., Karlušić, M., Tomić Luketić, K.,& Petrović, S. M.. (2021). The quantitative 6H-SiC crystal damage depth profiling. in Journal of Nuclear Materials, 555, 153143. https://doi.org/10.1016/j.jnucmat.2021.153143
Gloginjić M, Erich M, Kokkoris M, Liarokapis E, Fazinić S, Karlušić M, Tomić Luketić K, Petrović SM. The quantitative 6H-SiC crystal damage depth profiling. in Journal of Nuclear Materials. 2021;555:153143. doi:10.1016/j.jnucmat.2021.153143 .
Gloginjić, Marko, Erich, Marko, Kokkoris, Michael, Liarokapis, Efthymios, Fazinić, Stjepko, Karlušić, Marko, Tomić Luketić, Kristina, Petrović, Srđan M., "The quantitative 6H-SiC crystal damage depth profiling" in Journal of Nuclear Materials, 555 (2021):153143, https://doi.org/10.1016/j.jnucmat.2021.153143 . .