Depth profiling of high energy nitrogen ions implanted in the (100), (110) and randomly oriented silicon crystals
Petrović, Srđan M.
Telečki, Igor N.
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This work reports on the experimentally obtained depth profiles of 4 MeV N-14(2+) ions implanted in the (100), (110) and randomly oriented silicon crystals. The ion fluence was 10(17) particles/cm(2), The nitrogen depth profiling has been performed using the Nuclear Reaction Analysis (NRA) method, via the study of N-14(d,alpha(0))C-12 and N-14(d,alpha(1))C-12 nuclear reactions, and with the implementation of SRIM 2010 and SIMNRA computer simulation codes. For the randomly oriented silicon crystal, change of the density of silicon matrix and the nitrogen bubble formation have been proposed as the explanation for the difference between the experimental and simulated nitrogen depth profiles. During the implantation, the RBS/C spectra were measured on the nitrogen implanted and on the virgin crystal spots. These spectra provide information on the amorphization of the silicon crystals induced by the ion implantation. (C) 2011 Elsevier B.V. All rights reserved.
Кључне речи:Channeling implantation / Nuclear Reaction Analysis / RBS/C / Silicon amorphization
Извор:Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 2012, 274, 87-92
- SPIRIT - Support of Public and Industrial Research using Ion Beam Technology (EU-227012)
- Физика и хемија са јонским сноповима (RS-45006)
ISSN: 0168-583X (print); 1872-9584 (electronic)