Investigation of deep implanted carbon and oxygen channeling profiles in [110] silicon, using d-NRA and SEM
Само за регистроване кориснике
2014
Аутори
Paneta, ValentinaErich, Marko
Fazinić, Stjepko
Kokkoris, Michael
Kopsalis, Ioannis
Petrović, Srđan M.
Tadić, Tonči
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
Ion implantation is one of the most important techniques used in the silicon-based semiconductor industry. Using the ion axial channeling effect, which occurs when an ion beam is oriented along a crystallographic axis, it is theoretically possible to implant ions deeper in the crystal, in comparison with the random ion beam-solid orientation, while - at the same time - minimizing the induced crystal lattice damage. In the present work, 4 MeV C-12(2+) and 5 MeV O-16(2+) ions were implanted in high-purity [1 1 0] Si crystal wafers at fluences of the order of similar to 10(17) particles/cm(2), in both the channeling and random orientations. The resulting profiles were measured using d-NRA, i.e. implementing the C-12(d,p(0)) and O-16(d,p(0),alpha(0)) reactions respectively, at E-d,E-lab = 1.2-1.4 MeV. The results were validated using SEM (Scanning Electron Microscopy), while the extent of crystalline damage was monitored during the implantation via RBS/C (Rutherford Backscattering Spectrom...etry/Channeling) spectra. The resulting profiles seem to be in good agreement with those obtained in the past for fluorine and nitrogen ions implanted in silicon, and clearly demonstrate the capabilities of high-energy channeling implantations, as well as, the accuracy of d-NRA (Nuclear Reaction Analysis) profiling measurements.
Кључне речи:
d-NRA / Channeling implantation / SEMИзвор:
Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 2014, 320, 6-11Финансирање / пројекти:
- Физика и хемија са јонским сноповима (RS-MESTD-Integrated and Interdisciplinary Research (IIR or III)-45006)
- SPIRIT - Support of Public and Industrial Research using Ion Beam Technology (EU-FP7-227012)
- Support of Public and Industrial Research Using Ion Beam Technology (SPIRIT) as an Integrated Infrastructure Initiative project
DOI: 10.1016/j.nimb.2013.11.020
ISSN: 0168-583X; 1872-9584
WoS: 000331428000002
Scopus: 2-s2.0-84890946280
Институција/група
VinčaTY - JOUR AU - Paneta, Valentina AU - Erich, Marko AU - Fazinić, Stjepko AU - Kokkoris, Michael AU - Kopsalis, Ioannis AU - Petrović, Srđan M. AU - Tadić, Tonči PY - 2014 UR - https://vinar.vin.bg.ac.rs/handle/123456789/5885 AB - Ion implantation is one of the most important techniques used in the silicon-based semiconductor industry. Using the ion axial channeling effect, which occurs when an ion beam is oriented along a crystallographic axis, it is theoretically possible to implant ions deeper in the crystal, in comparison with the random ion beam-solid orientation, while - at the same time - minimizing the induced crystal lattice damage. In the present work, 4 MeV C-12(2+) and 5 MeV O-16(2+) ions were implanted in high-purity [1 1 0] Si crystal wafers at fluences of the order of similar to 10(17) particles/cm(2), in both the channeling and random orientations. The resulting profiles were measured using d-NRA, i.e. implementing the C-12(d,p(0)) and O-16(d,p(0),alpha(0)) reactions respectively, at E-d,E-lab = 1.2-1.4 MeV. The results were validated using SEM (Scanning Electron Microscopy), while the extent of crystalline damage was monitored during the implantation via RBS/C (Rutherford Backscattering Spectrometry/Channeling) spectra. The resulting profiles seem to be in good agreement with those obtained in the past for fluorine and nitrogen ions implanted in silicon, and clearly demonstrate the capabilities of high-energy channeling implantations, as well as, the accuracy of d-NRA (Nuclear Reaction Analysis) profiling measurements. T2 - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms T1 - Investigation of deep implanted carbon and oxygen channeling profiles in [110] silicon, using d-NRA and SEM VL - 320 SP - 6 EP - 11 DO - 10.1016/j.nimb.2013.11.020 ER -
@article{ author = "Paneta, Valentina and Erich, Marko and Fazinić, Stjepko and Kokkoris, Michael and Kopsalis, Ioannis and Petrović, Srđan M. and Tadić, Tonči", year = "2014", abstract = "Ion implantation is one of the most important techniques used in the silicon-based semiconductor industry. Using the ion axial channeling effect, which occurs when an ion beam is oriented along a crystallographic axis, it is theoretically possible to implant ions deeper in the crystal, in comparison with the random ion beam-solid orientation, while - at the same time - minimizing the induced crystal lattice damage. In the present work, 4 MeV C-12(2+) and 5 MeV O-16(2+) ions were implanted in high-purity [1 1 0] Si crystal wafers at fluences of the order of similar to 10(17) particles/cm(2), in both the channeling and random orientations. The resulting profiles were measured using d-NRA, i.e. implementing the C-12(d,p(0)) and O-16(d,p(0),alpha(0)) reactions respectively, at E-d,E-lab = 1.2-1.4 MeV. The results were validated using SEM (Scanning Electron Microscopy), while the extent of crystalline damage was monitored during the implantation via RBS/C (Rutherford Backscattering Spectrometry/Channeling) spectra. The resulting profiles seem to be in good agreement with those obtained in the past for fluorine and nitrogen ions implanted in silicon, and clearly demonstrate the capabilities of high-energy channeling implantations, as well as, the accuracy of d-NRA (Nuclear Reaction Analysis) profiling measurements.", journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms", title = "Investigation of deep implanted carbon and oxygen channeling profiles in [110] silicon, using d-NRA and SEM", volume = "320", pages = "6-11", doi = "10.1016/j.nimb.2013.11.020" }
Paneta, V., Erich, M., Fazinić, S., Kokkoris, M., Kopsalis, I., Petrović, S. M.,& Tadić, T.. (2014). Investigation of deep implanted carbon and oxygen channeling profiles in [110] silicon, using d-NRA and SEM. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 320, 6-11. https://doi.org/10.1016/j.nimb.2013.11.020
Paneta V, Erich M, Fazinić S, Kokkoris M, Kopsalis I, Petrović SM, Tadić T. Investigation of deep implanted carbon and oxygen channeling profiles in [110] silicon, using d-NRA and SEM. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2014;320:6-11. doi:10.1016/j.nimb.2013.11.020 .
Paneta, Valentina, Erich, Marko, Fazinić, Stjepko, Kokkoris, Michael, Kopsalis, Ioannis, Petrović, Srđan M., Tadić, Tonči, "Investigation of deep implanted carbon and oxygen channeling profiles in [110] silicon, using d-NRA and SEM" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 320 (2014):6-11, https://doi.org/10.1016/j.nimb.2013.11.020 . .