On the dechanneling of protons in Si
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In the present work; the dechanneling of protons in Si  is studied combining theoretical Monte-Carlo and phenomenological simulation results in the energy range E-p = 1.8-2.4 MeV. The applicability of a Gompertz type sigmoidal dechanneling function, with two parameters, k and x(c), which represent characteristic dechanneling rate and range, respectively, is examined; yielding the successful reproduction of backscattering spectra of channeled protons along the Si  crystal axis. The results are compared to the ones obtained in the past for different beam - crystal orientation combinations and an attempt is made to explain the occurring similarities and discrepancies.