Micro-Raman depth profiling of silicon amorphization induced by high-energy ion channeling implantation
Само за регистроване кориснике
2013
Аутори
Erich, MarkoPetrović, Srđan M.
Kokkoris, Michael
Liarokapis, Efthymios
Antonakos, Anastasios
Telečki, Igor N.
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
In this work, we study the silicon amorphization dependence on the crystal depth induced by 6-MeV Al2+ ions implanted in the LT 110 GT and randomly oriented silicon crystal channels, which was not directly experimentally accessible in the previous similar high-energy ioncrystal implantation cases. Accordingly, the micro-Raman spectroscopy scanning measurements along the crystal transversal cross section of the ion implanted region were performed. The ion fluence was 10(17) particles/cm(2). The scanning steps were 0.2 and 0.3 mu m, for the channeling and random ion implantations, respectively. The obtained results are compared with the corresponding Rutherford backscattering spectra of 1.2-MeV protons in the random and channeling orientations measured during the channeling implantation. Additionally, scanning electron microscope picture was taken on the transversal cross section of the implanted region in the channeling implantation case. We show here that the obtained silicon amorphiza...tion maxima are in excellent agreement with the corresponding estimated maxima of the aluminum concentration in silicon. This clearly indicates that the used specific micro-Raman spectroscopy scanning technique can be successfully applied for the depth profiling of the crystal amorphization induced by high-energy ion implantation.
Кључне речи:
Raman spectroscopy / silicon amorphization / ion implantationИзвор:
Journal of Raman Spectroscopy, 2013, 44, 3, 496-500Финансирање / пројекти:
- SPIRIT - Support of Public and Industrial Research using Ion Beam Technology (EU-FP7-227012)
- Физика и хемија са јонским сноповима (RS-MESTD-Integrated and Interdisciplinary Research (IIR or III)-45006)
DOI: 10.1002/jrs.4211
ISSN: 0377-0486; 1097-4555
WoS: 000316966900024
Scopus: 2-s2.0-84875734797
Институција/група
VinčaTY - JOUR AU - Erich, Marko AU - Petrović, Srđan M. AU - Kokkoris, Michael AU - Liarokapis, Efthymios AU - Antonakos, Anastasios AU - Telečki, Igor N. PY - 2013 UR - https://vinar.vin.bg.ac.rs/handle/123456789/5393 AB - In this work, we study the silicon amorphization dependence on the crystal depth induced by 6-MeV Al2+ ions implanted in the LT 110 GT and randomly oriented silicon crystal channels, which was not directly experimentally accessible in the previous similar high-energy ioncrystal implantation cases. Accordingly, the micro-Raman spectroscopy scanning measurements along the crystal transversal cross section of the ion implanted region were performed. The ion fluence was 10(17) particles/cm(2). The scanning steps were 0.2 and 0.3 mu m, for the channeling and random ion implantations, respectively. The obtained results are compared with the corresponding Rutherford backscattering spectra of 1.2-MeV protons in the random and channeling orientations measured during the channeling implantation. Additionally, scanning electron microscope picture was taken on the transversal cross section of the implanted region in the channeling implantation case. We show here that the obtained silicon amorphization maxima are in excellent agreement with the corresponding estimated maxima of the aluminum concentration in silicon. This clearly indicates that the used specific micro-Raman spectroscopy scanning technique can be successfully applied for the depth profiling of the crystal amorphization induced by high-energy ion implantation. T2 - Journal of Raman Spectroscopy T1 - Micro-Raman depth profiling of silicon amorphization induced by high-energy ion channeling implantation VL - 44 IS - 3 SP - 496 EP - 500 DO - 10.1002/jrs.4211 ER -
@article{ author = "Erich, Marko and Petrović, Srđan M. and Kokkoris, Michael and Liarokapis, Efthymios and Antonakos, Anastasios and Telečki, Igor N.", year = "2013", abstract = "In this work, we study the silicon amorphization dependence on the crystal depth induced by 6-MeV Al2+ ions implanted in the LT 110 GT and randomly oriented silicon crystal channels, which was not directly experimentally accessible in the previous similar high-energy ioncrystal implantation cases. Accordingly, the micro-Raman spectroscopy scanning measurements along the crystal transversal cross section of the ion implanted region were performed. The ion fluence was 10(17) particles/cm(2). The scanning steps were 0.2 and 0.3 mu m, for the channeling and random ion implantations, respectively. The obtained results are compared with the corresponding Rutherford backscattering spectra of 1.2-MeV protons in the random and channeling orientations measured during the channeling implantation. Additionally, scanning electron microscope picture was taken on the transversal cross section of the implanted region in the channeling implantation case. We show here that the obtained silicon amorphization maxima are in excellent agreement with the corresponding estimated maxima of the aluminum concentration in silicon. This clearly indicates that the used specific micro-Raman spectroscopy scanning technique can be successfully applied for the depth profiling of the crystal amorphization induced by high-energy ion implantation.", journal = "Journal of Raman Spectroscopy", title = "Micro-Raman depth profiling of silicon amorphization induced by high-energy ion channeling implantation", volume = "44", number = "3", pages = "496-500", doi = "10.1002/jrs.4211" }
Erich, M., Petrović, S. M., Kokkoris, M., Liarokapis, E., Antonakos, A.,& Telečki, I. N.. (2013). Micro-Raman depth profiling of silicon amorphization induced by high-energy ion channeling implantation. in Journal of Raman Spectroscopy, 44(3), 496-500. https://doi.org/10.1002/jrs.4211
Erich M, Petrović SM, Kokkoris M, Liarokapis E, Antonakos A, Telečki IN. Micro-Raman depth profiling of silicon amorphization induced by high-energy ion channeling implantation. in Journal of Raman Spectroscopy. 2013;44(3):496-500. doi:10.1002/jrs.4211 .
Erich, Marko, Petrović, Srđan M., Kokkoris, Michael, Liarokapis, Efthymios, Antonakos, Anastasios, Telečki, Igor N., "Micro-Raman depth profiling of silicon amorphization induced by high-energy ion channeling implantation" in Journal of Raman Spectroscopy, 44, no. 3 (2013):496-500, https://doi.org/10.1002/jrs.4211 . .