TY  - JOUR
AU  - Novaković, Mirjana M.
AU  - Popović, Maja
AU  - Zhang, Kun
AU  - Lieb, K. P.
AU  - Bibić, Nataša M.
PY  - 2014
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5890
AB  - The effect of the interface in cobalt-silicon bilayers on the silicide phase formation and microstructure has been investigated. Thin cobalt films were deposited by electron beam evaporation to a thickness of 50 nm on crystalline silicon (c-Si) or silicon with pre-amorphized surface (a-Si). After deposition one set of samples was annealed for 2 h at 200, 300, 400, 500, 600 and 700 degrees C. Another set of samples was irradiated with 400 keV Xe+ ions and then annealed at the same temperatures. Phase transitions were investigated with Rutherford backscattering spectroscopy, X-ray diffraction and cross-sectional transmission electron microscopy. No silicide formation was observed up to 400 degrees C, for both non-irradiated and ion-irradiated samples. When increasing the annealing temperature, the non-irradiated and irradiated Co/c-Si samples showed a similar behaviour: at 500 degrees C, CoSi appeared as the dominant silicide, followed by the formation of CoSi2 at 600 and 700 degrees C. In the case of non-irradiated Co/a-Si samples, no silicide formation occurred up to 700 degrees C, while irradiated samples with pre-amorphized substrate (Co/a-Si) showed a phase sequence similar to that in the Co/c-Si system. The observed phase transitions are found to be consistent with predictions of the effective heat of formation model. (C) 2014 Elsevier B. V. All rights reserved.
T2  - Applied Surface Science
T1  - Silicide phases formation in Co/c-Si and Co/a-Si systems during thermal annealing
VL  - 295
SP  - 158
EP  - 163
DO  - 10.1016/j.apsusc.2014.01.020
ER  - 

@article{
author = "Novaković, Mirjana M. and Popović, Maja and Zhang, Kun and Lieb, K. P. and Bibić, Nataša M.",
year = "2014",
abstract = "The effect of the interface in cobalt-silicon bilayers on the silicide phase formation and microstructure has been investigated. Thin cobalt films were deposited by electron beam evaporation to a thickness of 50 nm on crystalline silicon (c-Si) or silicon with pre-amorphized surface (a-Si). After deposition one set of samples was annealed for 2 h at 200, 300, 400, 500, 600 and 700 degrees C. Another set of samples was irradiated with 400 keV Xe+ ions and then annealed at the same temperatures. Phase transitions were investigated with Rutherford backscattering spectroscopy, X-ray diffraction and cross-sectional transmission electron microscopy. No silicide formation was observed up to 400 degrees C, for both non-irradiated and ion-irradiated samples. When increasing the annealing temperature, the non-irradiated and irradiated Co/c-Si samples showed a similar behaviour: at 500 degrees C, CoSi appeared as the dominant silicide, followed by the formation of CoSi2 at 600 and 700 degrees C. In the case of non-irradiated Co/a-Si samples, no silicide formation occurred up to 700 degrees C, while irradiated samples with pre-amorphized substrate (Co/a-Si) showed a phase sequence similar to that in the Co/c-Si system. The observed phase transitions are found to be consistent with predictions of the effective heat of formation model. (C) 2014 Elsevier B. V. All rights reserved.",
journal = "Applied Surface Science",
title = "Silicide phases formation in Co/c-Si and Co/a-Si systems during thermal annealing",
volume = "295",
pages = "158-163",
doi = "10.1016/j.apsusc.2014.01.020"
}

Novaković, M. M., Popović, M., Zhang, K., Lieb, K. P.,& Bibić, N. M.. (2014). Silicide phases formation in Co/c-Si and Co/a-Si systems during thermal annealing. in Applied Surface Science, 295, 158-163.
https://doi.org/10.1016/j.apsusc.2014.01.020

Novaković MM, Popović M, Zhang K, Lieb KP, Bibić NM. Silicide phases formation in Co/c-Si and Co/a-Si systems during thermal annealing. in Applied Surface Science. 2014;295:158-163.
doi:10.1016/j.apsusc.2014.01.020 .

Novaković, Mirjana M., Popović, Maja, Zhang, Kun, Lieb, K. P., Bibić, Nataša M., "Silicide phases formation in Co/c-Si and Co/a-Si systems during thermal annealing" in Applied Surface Science, 295 (2014):158-163,
https://doi.org/10.1016/j.apsusc.2014.01.020 . .

TY  - JOUR
AU  - Popović, Maja
AU  - Novaković, Mirjana M.
AU  - Traverse, A.
AU  - Zhang, Kun
AU  - Bibić, Nataša M.
AU  - Hofsaess, H.
AU  - Lieb, K. P.
PY  - 2013
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5385
AB  - Polycrystalline titaniumnitride (TiN) layers of 240 nmthickness and columnar microstructure were deposited at 150 degrees C by d. c. reactive sputtering on Si(100) wafers and then irradiated at roomtemperature with either 80 keV V+ ions (at fluences of up to 2x10(17) ions/cm(2)) or 200 keV Ar+ ions (at fluences of 5x10(15)-2x10(16) ions/cm(2)). Rutherford backscattering spectroscopy, cross-sectional (high-resolution) transmission electron microscopy and X-ray diffraction were used to characterize ion-induced changes in the structural properties of the films. Their optical and electric properties were analyzed by infrared reflectance (IR) and electric resistivity measurements. After deposition, the stoichiometric TiN films had a (111) texture. Ion implantation generated a damaged surface layer of nanocrystalline structure, which extended beyond the implantation profile, but left an undamaged bottom zone of (111) orientation. This layer geometry determined from transmission electron microscopy was inferred in the analysis of IR reflectance data using the Drude model, and the variation of the electric and optical resistivity with the irradiation was deduced. The results were compared to those recently gained for ion-implanted reactively sputtered chromium nitride films. (C) 2013 Elsevier B.V. All rights reserved.
T2  - Thin Solid Films
T1  - Modifications of reactively sputtered titanium nitride films by argon and vanadium ion implantation: Microstructural and opto-electric properties
VL  - 531
SP  - 189
EP  - 196
DO  - 10.1016/j.tsf.2013.01.045
ER  - 

@article{
author = "Popović, Maja and Novaković, Mirjana M. and Traverse, A. and Zhang, Kun and Bibić, Nataša M. and Hofsaess, H. and Lieb, K. P.",
year = "2013",
abstract = "Polycrystalline titaniumnitride (TiN) layers of 240 nmthickness and columnar microstructure were deposited at 150 degrees C by d. c. reactive sputtering on Si(100) wafers and then irradiated at roomtemperature with either 80 keV V+ ions (at fluences of up to 2x10(17) ions/cm(2)) or 200 keV Ar+ ions (at fluences of 5x10(15)-2x10(16) ions/cm(2)). Rutherford backscattering spectroscopy, cross-sectional (high-resolution) transmission electron microscopy and X-ray diffraction were used to characterize ion-induced changes in the structural properties of the films. Their optical and electric properties were analyzed by infrared reflectance (IR) and electric resistivity measurements. After deposition, the stoichiometric TiN films had a (111) texture. Ion implantation generated a damaged surface layer of nanocrystalline structure, which extended beyond the implantation profile, but left an undamaged bottom zone of (111) orientation. This layer geometry determined from transmission electron microscopy was inferred in the analysis of IR reflectance data using the Drude model, and the variation of the electric and optical resistivity with the irradiation was deduced. The results were compared to those recently gained for ion-implanted reactively sputtered chromium nitride films. (C) 2013 Elsevier B.V. All rights reserved.",
journal = "Thin Solid Films",
title = "Modifications of reactively sputtered titanium nitride films by argon and vanadium ion implantation: Microstructural and opto-electric properties",
volume = "531",
pages = "189-196",
doi = "10.1016/j.tsf.2013.01.045"
}

Popović, M., Novaković, M. M., Traverse, A., Zhang, K., Bibić, N. M., Hofsaess, H.,& Lieb, K. P.. (2013). Modifications of reactively sputtered titanium nitride films by argon and vanadium ion implantation: Microstructural and opto-electric properties. in Thin Solid Films, 531, 189-196.
https://doi.org/10.1016/j.tsf.2013.01.045

Popović M, Novaković MM, Traverse A, Zhang K, Bibić NM, Hofsaess H, Lieb KP. Modifications of reactively sputtered titanium nitride films by argon and vanadium ion implantation: Microstructural and opto-electric properties. in Thin Solid Films. 2013;531:189-196.
doi:10.1016/j.tsf.2013.01.045 .

Popović, Maja, Novaković, Mirjana M., Traverse, A., Zhang, Kun, Bibić, Nataša M., Hofsaess, H., Lieb, K. P., "Modifications of reactively sputtered titanium nitride films by argon and vanadium ion implantation: Microstructural and opto-electric properties" in Thin Solid Films, 531 (2013):189-196,
https://doi.org/10.1016/j.tsf.2013.01.045 . .

TY  - JOUR
AU  - Novaković, Mirjana M.
AU  - Traverse, A.
AU  - Popović, Maja
AU  - Lieb, K. P.
AU  - Zhang, Kun
AU  - Bibić, Nataša M.
PY  - 2012
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6964
AB  - We report on modifications of 280-nm thin polycrystalline CrN layers caused by vanadium ion implantation. The CrN layers were deposited at 150 degrees C by d.c. reactive sputtering on Si(100) wafers and then implanted at room temperature with 80-keV V+ ions to fluences of 1 x 10(17) and 2 x 10(17) ions/cm(2). Rutherford backscattering spectroscopy, cross-sectional transmission electron microscopy, and X-ray diffraction were used to characterize changes in the structural properties of the films. Their optical and electrical properties were analyzed by infrared spectroscopy in reflection mode and electrical resistivity measurements. CrN was found to keep its cubic structure under the conditions of vanadium ion implantation used here. The initially partially non-metallic CrN layer displays metallic character under implantation, which may be related to the possible formation of Cr1-xVxN.
T2  - Radiation Effects and Defects in Solids
T1  - Microstructural and opto-electrical properties of chromium nitride films implanted with vanadium ions
VL  - 167
IS  - 7
SP  - 496
EP  - 505
DO  - 10.1080/10420150.2012.656639
ER  - 

@article{
author = "Novaković, Mirjana M. and Traverse, A. and Popović, Maja and Lieb, K. P. and Zhang, Kun and Bibić, Nataša M.",
year = "2012",
abstract = "We report on modifications of 280-nm thin polycrystalline CrN layers caused by vanadium ion implantation. The CrN layers were deposited at 150 degrees C by d.c. reactive sputtering on Si(100) wafers and then implanted at room temperature with 80-keV V+ ions to fluences of 1 x 10(17) and 2 x 10(17) ions/cm(2). Rutherford backscattering spectroscopy, cross-sectional transmission electron microscopy, and X-ray diffraction were used to characterize changes in the structural properties of the films. Their optical and electrical properties were analyzed by infrared spectroscopy in reflection mode and electrical resistivity measurements. CrN was found to keep its cubic structure under the conditions of vanadium ion implantation used here. The initially partially non-metallic CrN layer displays metallic character under implantation, which may be related to the possible formation of Cr1-xVxN.",
journal = "Radiation Effects and Defects in Solids",
title = "Microstructural and opto-electrical properties of chromium nitride films implanted with vanadium ions",
volume = "167",
number = "7",
pages = "496-505",
doi = "10.1080/10420150.2012.656639"
}

Novaković, M. M., Traverse, A., Popović, M., Lieb, K. P., Zhang, K.,& Bibić, N. M.. (2012). Microstructural and opto-electrical properties of chromium nitride films implanted with vanadium ions. in Radiation Effects and Defects in Solids, 167(7), 496-505.
https://doi.org/10.1080/10420150.2012.656639

Novaković MM, Traverse A, Popović M, Lieb KP, Zhang K, Bibić NM. Microstructural and opto-electrical properties of chromium nitride films implanted with vanadium ions. in Radiation Effects and Defects in Solids. 2012;167(7):496-505.
doi:10.1080/10420150.2012.656639 .

Novaković, Mirjana M., Traverse, A., Popović, Maja, Lieb, K. P., Zhang, Kun, Bibić, Nataša M., "Microstructural and opto-electrical properties of chromium nitride films implanted with vanadium ions" in Radiation Effects and Defects in Solids, 167, no. 7 (2012):496-505,
https://doi.org/10.1080/10420150.2012.656639 . .

TY  - JOUR
AU  - Novaković, Mirjana M.
AU  - Zhang, Kun
AU  - Popović, Maja
AU  - Bibić, Nataša M.
AU  - Hofsaess, H.
AU  - Lieb, K. P.
PY  - 2011
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/4301
AB  - Studies on ion-irradiated transition-metal/silicon bilayers demonstrate that interface mixing and silicide phase formation depend sensitively on the ion and film parameters, including the structure of the metal/Si interface. Thin Co layers e-gun evaporated to a thickness of 50 nm on Si(1 0 0) wafers were bombarded at room temperature with 400-key Xe(+) ions at fluences of up to 3 x 10(16) cm(-2). We used either crystalline or pre-amorphized Si wafers the latter ones prepared by 1.0-keV Ar-ion implantation. The as-deposited or Xe-ion-irradiated samples were then isochronally annealed at temperatures up to 700 degrees C. Changes of the bilayer structures induced by ion irradiation and/or annealing were investigated with RBS, XRD and HRTEM. The mixing rate for the Co/c-Si couples, Delta sigma(2)/Phi = 3.0(4) nm(4), is higher than the value expected for ballistic mixing and about half the value typical for spike mixing. Mixing of pre-amorphized Si is much weaker relative to crystalline Si wafers, contrary to previous results obtained for Fe/Si bilayers. Annealing of irradiated samples produces very similar interdiffusion and phase formation patterns above 400 degrees C as in the non-irradiated Co/Si bilayers: the phase evolution follows the sequence Co(2)Si - GT CoSi - GT CoSi(2). (C) 2010 Elsevier B.V. All rights reserved.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Xenon-ion-induced and thermal mixing of Co/Si bilayers and their interplay
VL  - 269
IS  - 9
SP  - 881
EP  - 885
DO  - 10.1016/j.nimb.2010.12.077
ER  - 

@article{
author = "Novaković, Mirjana M. and Zhang, Kun and Popović, Maja and Bibić, Nataša M. and Hofsaess, H. and Lieb, K. P.",
year = "2011",
abstract = "Studies on ion-irradiated transition-metal/silicon bilayers demonstrate that interface mixing and silicide phase formation depend sensitively on the ion and film parameters, including the structure of the metal/Si interface. Thin Co layers e-gun evaporated to a thickness of 50 nm on Si(1 0 0) wafers were bombarded at room temperature with 400-key Xe(+) ions at fluences of up to 3 x 10(16) cm(-2). We used either crystalline or pre-amorphized Si wafers the latter ones prepared by 1.0-keV Ar-ion implantation. The as-deposited or Xe-ion-irradiated samples were then isochronally annealed at temperatures up to 700 degrees C. Changes of the bilayer structures induced by ion irradiation and/or annealing were investigated with RBS, XRD and HRTEM. The mixing rate for the Co/c-Si couples, Delta sigma(2)/Phi = 3.0(4) nm(4), is higher than the value expected for ballistic mixing and about half the value typical for spike mixing. Mixing of pre-amorphized Si is much weaker relative to crystalline Si wafers, contrary to previous results obtained for Fe/Si bilayers. Annealing of irradiated samples produces very similar interdiffusion and phase formation patterns above 400 degrees C as in the non-irradiated Co/Si bilayers: the phase evolution follows the sequence Co(2)Si - GT CoSi - GT CoSi(2). (C) 2010 Elsevier B.V. All rights reserved.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Xenon-ion-induced and thermal mixing of Co/Si bilayers and their interplay",
volume = "269",
number = "9",
pages = "881-885",
doi = "10.1016/j.nimb.2010.12.077"
}

Novaković, M. M., Zhang, K., Popović, M., Bibić, N. M., Hofsaess, H.,& Lieb, K. P.. (2011). Xenon-ion-induced and thermal mixing of Co/Si bilayers and their interplay. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 269(9), 881-885.
https://doi.org/10.1016/j.nimb.2010.12.077

Novaković MM, Zhang K, Popović M, Bibić NM, Hofsaess H, Lieb KP. Xenon-ion-induced and thermal mixing of Co/Si bilayers and their interplay. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2011;269(9):881-885.
doi:10.1016/j.nimb.2010.12.077 .

Novaković, Mirjana M., Zhang, Kun, Popović, Maja, Bibić, Nataša M., Hofsaess, H., Lieb, K. P., "Xenon-ion-induced and thermal mixing of Co/Si bilayers and their interplay" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 269, no. 9 (2011):881-885,
https://doi.org/10.1016/j.nimb.2010.12.077 . .

TY  - JOUR
AU  - Errico, L. A.
AU  - Petrilli, H. M.
AU  - Terrazos, L. A.
AU  - Kulinska, A.
AU  - Wodniecki, P.
AU  - Lieb, K. P.
AU  - Uhrmacher, M.
AU  - Belošević-Čavor, Jelena
AU  - Koteski, Vasil J.
PY  - 2010
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/3994
AB  - The quadrupolar hyperfine interactions of in-diffused In-111 - GT Cd-111 probes in polycrystalline isostructural Zr4Al3 and Hf4Al3 samples containing small admixtures of the phases (Zr/Hf)(3)Al-2 were investigated. A strong preference of In-111 solutes for the contaminant (Zr/Hf)(3)Al-2 minority phases was observed. Detailed calculations of the electric field gradient (EFG) at the Cd nucleus using the full-potential augmented plane wave + local orbital formalism allowed us to assign the observed EFG fractions to the various lattice sites in the (Zr/Hf)(3)Al-2 compounds and to understand the preferential site occupation of the minority phases by the In-111 atoms. The effects of the size of the supercell and relaxation around the oversized In and Cd probe atoms were investigated in detail.
T2  - Journal of Physics: Condensed Matter
T1  - Electric field gradients in In-111-doped (Hf/Zr)(3)Al-2 and (Hf/Zr)(4)Al-3 mixed compounds: ab initio calculations, perturbed angular correlation measurements and site preference
VL  - 22
IS  - 21
DO  - 10.1088/0953-8984/22/21/215501
ER  - 

@article{
author = "Errico, L. A. and Petrilli, H. M. and Terrazos, L. A. and Kulinska, A. and Wodniecki, P. and Lieb, K. P. and Uhrmacher, M. and Belošević-Čavor, Jelena and Koteski, Vasil J.",
year = "2010",
abstract = "The quadrupolar hyperfine interactions of in-diffused In-111 - GT Cd-111 probes in polycrystalline isostructural Zr4Al3 and Hf4Al3 samples containing small admixtures of the phases (Zr/Hf)(3)Al-2 were investigated. A strong preference of In-111 solutes for the contaminant (Zr/Hf)(3)Al-2 minority phases was observed. Detailed calculations of the electric field gradient (EFG) at the Cd nucleus using the full-potential augmented plane wave + local orbital formalism allowed us to assign the observed EFG fractions to the various lattice sites in the (Zr/Hf)(3)Al-2 compounds and to understand the preferential site occupation of the minority phases by the In-111 atoms. The effects of the size of the supercell and relaxation around the oversized In and Cd probe atoms were investigated in detail.",
journal = "Journal of Physics: Condensed Matter",
title = "Electric field gradients in In-111-doped (Hf/Zr)(3)Al-2 and (Hf/Zr)(4)Al-3 mixed compounds: ab initio calculations, perturbed angular correlation measurements and site preference",
volume = "22",
number = "21",
doi = "10.1088/0953-8984/22/21/215501"
}

Errico, L. A., Petrilli, H. M., Terrazos, L. A., Kulinska, A., Wodniecki, P., Lieb, K. P., Uhrmacher, M., Belošević-Čavor, J.,& Koteski, V. J.. (2010). Electric field gradients in In-111-doped (Hf/Zr)(3)Al-2 and (Hf/Zr)(4)Al-3 mixed compounds: ab initio calculations, perturbed angular correlation measurements and site preference. in Journal of Physics: Condensed Matter, 22(21).
https://doi.org/10.1088/0953-8984/22/21/215501

Errico LA, Petrilli HM, Terrazos LA, Kulinska A, Wodniecki P, Lieb KP, Uhrmacher M, Belošević-Čavor J, Koteski VJ. Electric field gradients in In-111-doped (Hf/Zr)(3)Al-2 and (Hf/Zr)(4)Al-3 mixed compounds: ab initio calculations, perturbed angular correlation measurements and site preference. in Journal of Physics: Condensed Matter. 2010;22(21).
doi:10.1088/0953-8984/22/21/215501 .

Errico, L. A., Petrilli, H. M., Terrazos, L. A., Kulinska, A., Wodniecki, P., Lieb, K. P., Uhrmacher, M., Belošević-Čavor, Jelena, Koteski, Vasil J., "Electric field gradients in In-111-doped (Hf/Zr)(3)Al-2 and (Hf/Zr)(4)Al-3 mixed compounds: ab initio calculations, perturbed angular correlation measurements and site preference" in Journal of Physics: Condensed Matter, 22, no. 21 (2010),
https://doi.org/10.1088/0953-8984/22/21/215501 . .

TY  - JOUR
AU  - Bibić, Nataša M.
AU  - Milinović, Velimir
AU  - Milosavljević, Momir
AU  - Schrempel, F.
AU  - Šiljegović, Milorad
AU  - Lieb, K. P.
PY  - 2008
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/3575
AB  - Ion beam mixing of Fe/Si bilayers, induced by 100 keV (40)Arions at room temperature was investigated. Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were applied for structural characterization. The main focus of this study was on the influence of the substrate structure on interface mixing. The influence of the substrate structure is due to the two classes of irradiated bilayers, Fe thin films deposited on crystalline or pre-amorphized Si substrates. An about 76% higher efficiency of atomic transport across the pre-amorphized Fe/a-Si interface as compared to that of Fe/c-Si bilayers was observed.
T2  - Journal of Microscopy, Oxford
T1  - Effects of the Ar ions pre-amorphization of Si substrateon interface mixing of Fe/Si bilayers
VL  - 232
IS  - 3
SP  - 539
EP  - 541
DO  - 10.1111/j.1365-2818.2008.02143.x
ER  - 

@article{
author = "Bibić, Nataša M. and Milinović, Velimir and Milosavljević, Momir and Schrempel, F. and Šiljegović, Milorad and Lieb, K. P.",
year = "2008",
abstract = "Ion beam mixing of Fe/Si bilayers, induced by 100 keV (40)Arions at room temperature was investigated. Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were applied for structural characterization. The main focus of this study was on the influence of the substrate structure on interface mixing. The influence of the substrate structure is due to the two classes of irradiated bilayers, Fe thin films deposited on crystalline or pre-amorphized Si substrates. An about 76% higher efficiency of atomic transport across the pre-amorphized Fe/a-Si interface as compared to that of Fe/c-Si bilayers was observed.",
journal = "Journal of Microscopy, Oxford",
title = "Effects of the Ar ions pre-amorphization of Si substrateon interface mixing of Fe/Si bilayers",
volume = "232",
number = "3",
pages = "539-541",
doi = "10.1111/j.1365-2818.2008.02143.x"
}

Bibić, N. M., Milinović, V., Milosavljević, M., Schrempel, F., Šiljegović, M.,& Lieb, K. P.. (2008). Effects of the Ar ions pre-amorphization of Si substrateon interface mixing of Fe/Si bilayers. in Journal of Microscopy, Oxford, 232(3), 539-541.
https://doi.org/10.1111/j.1365-2818.2008.02143.x

Bibić NM, Milinović V, Milosavljević M, Schrempel F, Šiljegović M, Lieb KP. Effects of the Ar ions pre-amorphization of Si substrateon interface mixing of Fe/Si bilayers. in Journal of Microscopy, Oxford. 2008;232(3):539-541.
doi:10.1111/j.1365-2818.2008.02143.x .

Bibić, Nataša M., Milinović, Velimir, Milosavljević, Momir, Schrempel, F., Šiljegović, Milorad, Lieb, K. P., "Effects of the Ar ions pre-amorphization of Si substrateon interface mixing of Fe/Si bilayers" in Journal of Microscopy, Oxford, 232, no. 3 (2008):539-541,
https://doi.org/10.1111/j.1365-2818.2008.02143.x . .

TY  - JOUR
AU  - Bibić, Nataša M.
AU  - Lieb, K. P.
AU  - Milinović, Velimir
AU  - Mitrić, Miodrag
AU  - Šiljegović, Milorad
AU  - Zhang, Kun
PY  - 2008
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6767
AB  - Heavy-ion irradiation of ferromagnetic thin layers changes their micromagnetic and microstructural properties, due to the production of defects, relaxation or build-up of stress, or changes of grain size. When the ion range exceeds the layer thickness, ion mixing processes take place, leading to the formation of silicide phases. The present study deals with CO(30 or 55 nm)/Si bilayers irradiated at room temperature with 100- or 200 keV Xe ions to fluences of up to 15 x 10(15)/cm(2). The Si(100) wafers were either crystalline or pre-amorphized by 1 keV Ar+ implantation. Rutherford backscattering spectroscopy, in-plane magneto-optical Kerr effect, and X-ray diffraction served to analyse the samples before and after irradiation. The results will be compared with those obtained for other heavy-ions for Co/Si bilayers and in similar studies on Fe/Si bilayers. (C) 2008 Elsevier B.V. All rights reserved.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Xenon-ion irradiation of Co/Si bilayers: Effects of interface structure and ion energy
VL  - 266
IS  - 10
SP  - 2498
EP  - 2502
DO  - 10.1016/j.nimb.2008.03.033
ER  - 

@article{
author = "Bibić, Nataša M. and Lieb, K. P. and Milinović, Velimir and Mitrić, Miodrag and Šiljegović, Milorad and Zhang, Kun",
year = "2008",
abstract = "Heavy-ion irradiation of ferromagnetic thin layers changes their micromagnetic and microstructural properties, due to the production of defects, relaxation or build-up of stress, or changes of grain size. When the ion range exceeds the layer thickness, ion mixing processes take place, leading to the formation of silicide phases. The present study deals with CO(30 or 55 nm)/Si bilayers irradiated at room temperature with 100- or 200 keV Xe ions to fluences of up to 15 x 10(15)/cm(2). The Si(100) wafers were either crystalline or pre-amorphized by 1 keV Ar+ implantation. Rutherford backscattering spectroscopy, in-plane magneto-optical Kerr effect, and X-ray diffraction served to analyse the samples before and after irradiation. The results will be compared with those obtained for other heavy-ions for Co/Si bilayers and in similar studies on Fe/Si bilayers. (C) 2008 Elsevier B.V. All rights reserved.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Xenon-ion irradiation of Co/Si bilayers: Effects of interface structure and ion energy",
volume = "266",
number = "10",
pages = "2498-2502",
doi = "10.1016/j.nimb.2008.03.033"
}

Bibić, N. M., Lieb, K. P., Milinović, V., Mitrić, M., Šiljegović, M.,& Zhang, K.. (2008). Xenon-ion irradiation of Co/Si bilayers: Effects of interface structure and ion energy. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 266(10), 2498-2502.
https://doi.org/10.1016/j.nimb.2008.03.033

Bibić NM, Lieb KP, Milinović V, Mitrić M, Šiljegović M, Zhang K. Xenon-ion irradiation of Co/Si bilayers: Effects of interface structure and ion energy. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2008;266(10):2498-2502.
doi:10.1016/j.nimb.2008.03.033 .

Bibić, Nataša M., Lieb, K. P., Milinović, Velimir, Mitrić, Miodrag, Šiljegović, Milorad, Zhang, Kun, "Xenon-ion irradiation of Co/Si bilayers: Effects of interface structure and ion energy" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 266, no. 10 (2008):2498-2502,
https://doi.org/10.1016/j.nimb.2008.03.033 . .

TY  - JOUR
AU  - Zhang, Kun
AU  - Lieb, K. P.
AU  - Bibić, Nataša M.
AU  - Pilet, N.
AU  - Ashworth, T. V.
AU  - Marioni, M. A.
AU  - Hug, H. J.
PY  - 2008
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/3406
AB  - Polycrystalline nickel layers, deposited on Si( 1 1 0) wafers via electron beam evaporation to a thickness of 29 or 68 - 70 nm, were thermally annealed in vacuo at 493 or 530 K. The elemental interdiffusion across the Ni/Si interface was measured by means of Rutherford backscattering spectroscopy, and the relaxation of stress and grain growth by means of x-ray diffraction. At 530 K, a slight logarithmic increase in the interface variance with the annealing time, but no crystalline silicide formation was observed. The in-plane magneto-optical Kerr effect and magnetic force microscopy were used to investigate the changes in the magnetic properties. With increasing annealing time, the decrease in coercivity and gain in magnetic remanence were correlated with the relaxation of stress. Similarities with ion-irradiated Ni/Si couples will be discussed.
T2  - Journal of Physics. D: Applied Physics
T1  - Microstructural and magnetic properties of thermally mixed Ni/Si bilayers
VL  - 41
IS  - 9
DO  - 10.1088/0022-3727/41/9/095003
ER  - 

@article{
author = "Zhang, Kun and Lieb, K. P. and Bibić, Nataša M. and Pilet, N. and Ashworth, T. V. and Marioni, M. A. and Hug, H. J.",
year = "2008",
abstract = "Polycrystalline nickel layers, deposited on Si( 1 1 0) wafers via electron beam evaporation to a thickness of 29 or 68 - 70 nm, were thermally annealed in vacuo at 493 or 530 K. The elemental interdiffusion across the Ni/Si interface was measured by means of Rutherford backscattering spectroscopy, and the relaxation of stress and grain growth by means of x-ray diffraction. At 530 K, a slight logarithmic increase in the interface variance with the annealing time, but no crystalline silicide formation was observed. The in-plane magneto-optical Kerr effect and magnetic force microscopy were used to investigate the changes in the magnetic properties. With increasing annealing time, the decrease in coercivity and gain in magnetic remanence were correlated with the relaxation of stress. Similarities with ion-irradiated Ni/Si couples will be discussed.",
journal = "Journal of Physics. D: Applied Physics",
title = "Microstructural and magnetic properties of thermally mixed Ni/Si bilayers",
volume = "41",
number = "9",
doi = "10.1088/0022-3727/41/9/095003"
}

Zhang, K., Lieb, K. P., Bibić, N. M., Pilet, N., Ashworth, T. V., Marioni, M. A.,& Hug, H. J.. (2008). Microstructural and magnetic properties of thermally mixed Ni/Si bilayers. in Journal of Physics. D: Applied Physics, 41(9).
https://doi.org/10.1088/0022-3727/41/9/095003

Zhang K, Lieb KP, Bibić NM, Pilet N, Ashworth TV, Marioni MA, Hug HJ. Microstructural and magnetic properties of thermally mixed Ni/Si bilayers. in Journal of Physics. D: Applied Physics. 2008;41(9).
doi:10.1088/0022-3727/41/9/095003 .

Zhang, Kun, Lieb, K. P., Bibić, Nataša M., Pilet, N., Ashworth, T. V., Marioni, M. A., Hug, H. J., "Microstructural and magnetic properties of thermally mixed Ni/Si bilayers" in Journal of Physics. D: Applied Physics, 41, no. 9 (2008),
https://doi.org/10.1088/0022-3727/41/9/095003 . .

TY  - JOUR
AU  - Bibić, Nataša M.
AU  - Milinović, Velimir
AU  - Lieb, K. P.
AU  - Milosavljević, Momir
AU  - Schrempel, F.
PY  - 2007
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/3150
AB  - Ion-beam mixing of Fe/Si bilayers, induced at room temperature by 100 keV Ar-40(+), 180 keV Kr-86(+), and 250 keV Xe-132(+) ions, was investigated. The study focuses on the influence of the preamorphization of the Si(100) substrates by 1.0 keV Ar-ion irradiation. Rutherford backscattering spectroscopy as well as scanning and transmission electron microscopies were applied for structural characterization. The mixing rate across the preamorphized Fe/Si interface was, on average, by 76% higher than that of crystalline Si. (c) 2007 American Institute of Physics.
T2  - Applied Physics Letters
T1  - Enhanced interface mixing of Fe/Si bilayers on preamorphized silicon substrates
VL  - 90
IS  - 5
DO  - 10.1063/1.2432952
ER  - 

@article{
author = "Bibić, Nataša M. and Milinović, Velimir and Lieb, K. P. and Milosavljević, Momir and Schrempel, F.",
year = "2007",
abstract = "Ion-beam mixing of Fe/Si bilayers, induced at room temperature by 100 keV Ar-40(+), 180 keV Kr-86(+), and 250 keV Xe-132(+) ions, was investigated. The study focuses on the influence of the preamorphization of the Si(100) substrates by 1.0 keV Ar-ion irradiation. Rutherford backscattering spectroscopy as well as scanning and transmission electron microscopies were applied for structural characterization. The mixing rate across the preamorphized Fe/Si interface was, on average, by 76% higher than that of crystalline Si. (c) 2007 American Institute of Physics.",
journal = "Applied Physics Letters",
title = "Enhanced interface mixing of Fe/Si bilayers on preamorphized silicon substrates",
volume = "90",
number = "5",
doi = "10.1063/1.2432952"
}

Bibić, N. M., Milinović, V., Lieb, K. P., Milosavljević, M.,& Schrempel, F.. (2007). Enhanced interface mixing of Fe/Si bilayers on preamorphized silicon substrates. in Applied Physics Letters, 90(5).
https://doi.org/10.1063/1.2432952

Bibić NM, Milinović V, Lieb KP, Milosavljević M, Schrempel F. Enhanced interface mixing of Fe/Si bilayers on preamorphized silicon substrates. in Applied Physics Letters. 2007;90(5).
doi:10.1063/1.2432952 .

Bibić, Nataša M., Milinović, Velimir, Lieb, K. P., Milosavljević, Momir, Schrempel, F., "Enhanced interface mixing of Fe/Si bilayers on preamorphized silicon substrates" in Applied Physics Letters, 90, no. 5 (2007),
https://doi.org/10.1063/1.2432952 . .

TY  - JOUR
AU  - Milinović, Velimir
AU  - Bibić, Nataša M.
AU  - Lieb, K. P.
AU  - Milosavljević, Momir
AU  - Schrempel, F.
PY  - 2007
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6655
AB  - Charge-state equilibration of ions moving in matter occurs within femtoseconds and when penetrating nanometer depths. Ion-beam mixing in bilayers, tens of nm thick, should therefore not depend on the charge state of the projectiles. As the experimental situation for metal/silicon bilayers irradiated with noble-gas ions of different charge-states is ambiguous, we studied interface mixing of Fe/Si(1 0 0) bilayers, induced by 100 keV Ar-40, 180 keV Kr-86 and 250 keV Xe-132 ions, either singly and multiply charged (Ar8+, Kr11+, Xe17+). No significant influence of the ionic charge-state was established for Kr and Xe ions; a slightly higher mixing rate was found for Ar8+ than for Ar1+ irradiation. (c) 2007 Elsevier B.V. All rights reserved.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Interface mixing of Fe/Si bilayers by noble-gas ions: Are there effects of the ionic charge state?
VL  - 257
SP  - 605
EP  - 608
DO  - 10.1016/j.nimb.2007.01.063
ER  - 

@article{
author = "Milinović, Velimir and Bibić, Nataša M. and Lieb, K. P. and Milosavljević, Momir and Schrempel, F.",
year = "2007",
abstract = "Charge-state equilibration of ions moving in matter occurs within femtoseconds and when penetrating nanometer depths. Ion-beam mixing in bilayers, tens of nm thick, should therefore not depend on the charge state of the projectiles. As the experimental situation for metal/silicon bilayers irradiated with noble-gas ions of different charge-states is ambiguous, we studied interface mixing of Fe/Si(1 0 0) bilayers, induced by 100 keV Ar-40, 180 keV Kr-86 and 250 keV Xe-132 ions, either singly and multiply charged (Ar8+, Kr11+, Xe17+). No significant influence of the ionic charge-state was established for Kr and Xe ions; a slightly higher mixing rate was found for Ar8+ than for Ar1+ irradiation. (c) 2007 Elsevier B.V. All rights reserved.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Interface mixing of Fe/Si bilayers by noble-gas ions: Are there effects of the ionic charge state?",
volume = "257",
pages = "605-608",
doi = "10.1016/j.nimb.2007.01.063"
}

Milinović, V., Bibić, N. M., Lieb, K. P., Milosavljević, M.,& Schrempel, F.. (2007). Interface mixing of Fe/Si bilayers by noble-gas ions: Are there effects of the ionic charge state?. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 257, 605-608.
https://doi.org/10.1016/j.nimb.2007.01.063

Milinović V, Bibić NM, Lieb KP, Milosavljević M, Schrempel F. Interface mixing of Fe/Si bilayers by noble-gas ions: Are there effects of the ionic charge state?. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2007;257:605-608.
doi:10.1016/j.nimb.2007.01.063 .

Milinović, Velimir, Bibić, Nataša M., Lieb, K. P., Milosavljević, Momir, Schrempel, F., "Interface mixing of Fe/Si bilayers by noble-gas ions: Are there effects of the ionic charge state?" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 257 (2007):605-608,
https://doi.org/10.1016/j.nimb.2007.01.063 . .

TY  - CONF
AU  - Bibić, Nataša
AU  - Milosavljević, M.
AU  - Milinović, Velimir
AU  - Šiljegović, M.
AU  - Peruško, Davor
AU  - Schaaf, P.
AU  - Lieb, K. P.
PY  - 2004
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12893
AB  - In recent years, considerable progress has been made in the understanding of heavyion- induced mixing and reactions of metal/semiconductor bilayers at ion energies, where nuclear stopping prevails. For the study of ion induced reactions in Fe/Si structures, the 30 nm 57Fe/Si bilayers were irradiated with 22 keV N2+, 250 keV Xe+, 100 keV Ar+ and 100 keV Ar8+ ions at fluences in the range of 0.05-2x1017ions/cm2. The structural changes and phase formation induced by irradiation were analyzed by Rutherford backscattering spectroscopy (RBS), X-ray diffraction analyses (XRD) and conversion electron Mössbauer spectroscopy (CEMS). The present article briefly reviews obtained experimental findings and our attempts in modeling the atomic transport processes leading to the growth of compound layers across the metal/semiconductor interface.
C3  - SFKM 2004 : XVI National Symposium on Condensed Matter Physics : Program and Contributed Papers
T1  - Nitrogen and noble-gas ion irraditions of 57Fe/Si bilayers
SP  - 73
EP  - 73
UR  - https://hdl.handle.net/21.15107/rcub_vinar_12893
ER  - 

@conference{
author = "Bibić, Nataša and Milosavljević, M. and Milinović, Velimir and Šiljegović, M. and Peruško, Davor and Schaaf, P. and Lieb, K. P.",
year = "2004",
abstract = "In recent years, considerable progress has been made in the understanding of heavyion- induced mixing and reactions of metal/semiconductor bilayers at ion energies, where nuclear stopping prevails. For the study of ion induced reactions in Fe/Si structures, the 30 nm 57Fe/Si bilayers were irradiated with 22 keV N2+, 250 keV Xe+, 100 keV Ar+ and 100 keV Ar8+ ions at fluences in the range of 0.05-2x1017ions/cm2. The structural changes and phase formation induced by irradiation were analyzed by Rutherford backscattering spectroscopy (RBS), X-ray diffraction analyses (XRD) and conversion electron Mössbauer spectroscopy (CEMS). The present article briefly reviews obtained experimental findings and our attempts in modeling the atomic transport processes leading to the growth of compound layers across the metal/semiconductor interface.",
journal = "SFKM 2004 : XVI National Symposium on Condensed Matter Physics : Program and Contributed Papers",
title = "Nitrogen and noble-gas ion irraditions of 57Fe/Si bilayers",
pages = "73-73",
url = "https://hdl.handle.net/21.15107/rcub_vinar_12893"
}

Bibić, N., Milosavljević, M., Milinović, V., Šiljegović, M., Peruško, D., Schaaf, P.,& Lieb, K. P.. (2004). Nitrogen and noble-gas ion irraditions of 57Fe/Si bilayers. in SFKM 2004 : XVI National Symposium on Condensed Matter Physics : Program and Contributed Papers, 73-73.
https://hdl.handle.net/21.15107/rcub_vinar_12893

Bibić N, Milosavljević M, Milinović V, Šiljegović M, Peruško D, Schaaf P, Lieb KP. Nitrogen and noble-gas ion irraditions of 57Fe/Si bilayers. in SFKM 2004 : XVI National Symposium on Condensed Matter Physics : Program and Contributed Papers. 2004;:73-73.
https://hdl.handle.net/21.15107/rcub_vinar_12893 .

Bibić, Nataša, Milosavljević, M., Milinović, Velimir, Šiljegović, M., Peruško, Davor, Schaaf, P., Lieb, K. P., "Nitrogen and noble-gas ion irraditions of 57Fe/Si bilayers" in SFKM 2004 : XVI National Symposium on Condensed Matter Physics : Program and Contributed Papers (2004):73-73,
https://hdl.handle.net/21.15107/rcub_vinar_12893 .