Silicide phases formation in Co/c-Si and Co/a-Si systems during thermal annealing
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The effect of the interface in cobalt-silicon bilayers on the silicide phase formation and microstructure has been investigated. Thin cobalt films were deposited by electron beam evaporation to a thickness of 50 nm on crystalline silicon (c-Si) or silicon with pre-amorphized surface (a-Si). After deposition one set of samples was annealed for 2 h at 200, 300, 400, 500, 600 and 700 degrees C. Another set of samples was irradiated with 400 keV Xe+ ions and then annealed at the same temperatures. Phase transitions were investigated with Rutherford backscattering spectroscopy, X-ray diffraction and cross-sectional transmission electron microscopy. No silicide formation was observed up to 400 degrees C, for both non-irradiated and ion-irradiated samples. When increasing the annealing temperature, the non-irradiated and irradiated Co/c-Si samples showed a similar behaviour: at 500 degrees C, CoSi appeared as the dominant silicide, followed by the formation of CoSi2 at 600 and 700 degrees C. ...In the case of non-irradiated Co/a-Si samples, no silicide formation occurred up to 700 degrees C, while irradiated samples with pre-amorphized substrate (Co/a-Si) showed a phase sequence similar to that in the Co/c-Si system. The observed phase transitions are found to be consistent with predictions of the effective heat of formation model. (C) 2014 Elsevier B. V. All rights reserved.
Кључне речи:Cobalt / Phase transitions / Silicides / RBS / XRD / TEM
Извор:Applied Surface Science, 2014, 295, 158-163
- Функционални, функционализовани и усавршени нано материјали (RS-45005)
- Deutsche Forschungsgemeinschaft