Xenon-ion-induced and thermal mixing of Co/Si bilayers and their interplay
Апстракт
Studies on ion-irradiated transition-metal/silicon bilayers demonstrate that interface mixing and silicide phase formation depend sensitively on the ion and film parameters, including the structure of the metal/Si interface. Thin Co layers e-gun evaporated to a thickness of 50 nm on Si(1 0 0) wafers were bombarded at room temperature with 400-key Xe(+) ions at fluences of up to 3 x 10(16) cm(-2). We used either crystalline or pre-amorphized Si wafers the latter ones prepared by 1.0-keV Ar-ion implantation. The as-deposited or Xe-ion-irradiated samples were then isochronally annealed at temperatures up to 700 degrees C. Changes of the bilayer structures induced by ion irradiation and/or annealing were investigated with RBS, XRD and HRTEM. The mixing rate for the Co/c-Si couples, Delta sigma(2)/Phi = 3.0(4) nm(4), is higher than the value expected for ballistic mixing and about half the value typical for spike mixing. Mixing of pre-amorphized Si is much weaker relative to crystalline Si ...wafers, contrary to previous results obtained for Fe/Si bilayers. Annealing of irradiated samples produces very similar interdiffusion and phase formation patterns above 400 degrees C as in the non-irradiated Co/Si bilayers: the phase evolution follows the sequence Co(2)Si - GT CoSi - GT CoSi(2). (C) 2010 Elsevier B.V. All rights reserved.
Кључне речи:
Ion beam mixing / Thermal mixing / Silicides / TEM, RBS, XRDИзвор:
Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 2011, 269, 9, 881-885
DOI: 10.1016/j.nimb.2010.12.077
ISSN: 0168-583X
WoS: 000290191800019
Scopus: 2-s2.0-79953765046
Колекције
Институција/група
VinčaTY - JOUR AU - Novaković, Mirjana M. AU - Zhang, Kun AU - Popović, Maja AU - Bibić, Nataša M. AU - Hofsaess, H. AU - Lieb, K. P. PY - 2011 UR - https://vinar.vin.bg.ac.rs/handle/123456789/4301 AB - Studies on ion-irradiated transition-metal/silicon bilayers demonstrate that interface mixing and silicide phase formation depend sensitively on the ion and film parameters, including the structure of the metal/Si interface. Thin Co layers e-gun evaporated to a thickness of 50 nm on Si(1 0 0) wafers were bombarded at room temperature with 400-key Xe(+) ions at fluences of up to 3 x 10(16) cm(-2). We used either crystalline or pre-amorphized Si wafers the latter ones prepared by 1.0-keV Ar-ion implantation. The as-deposited or Xe-ion-irradiated samples were then isochronally annealed at temperatures up to 700 degrees C. Changes of the bilayer structures induced by ion irradiation and/or annealing were investigated with RBS, XRD and HRTEM. The mixing rate for the Co/c-Si couples, Delta sigma(2)/Phi = 3.0(4) nm(4), is higher than the value expected for ballistic mixing and about half the value typical for spike mixing. Mixing of pre-amorphized Si is much weaker relative to crystalline Si wafers, contrary to previous results obtained for Fe/Si bilayers. Annealing of irradiated samples produces very similar interdiffusion and phase formation patterns above 400 degrees C as in the non-irradiated Co/Si bilayers: the phase evolution follows the sequence Co(2)Si - GT CoSi - GT CoSi(2). (C) 2010 Elsevier B.V. All rights reserved. T2 - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms T1 - Xenon-ion-induced and thermal mixing of Co/Si bilayers and their interplay VL - 269 IS - 9 SP - 881 EP - 885 DO - 10.1016/j.nimb.2010.12.077 ER -
@article{ author = "Novaković, Mirjana M. and Zhang, Kun and Popović, Maja and Bibić, Nataša M. and Hofsaess, H. and Lieb, K. P.", year = "2011", abstract = "Studies on ion-irradiated transition-metal/silicon bilayers demonstrate that interface mixing and silicide phase formation depend sensitively on the ion and film parameters, including the structure of the metal/Si interface. Thin Co layers e-gun evaporated to a thickness of 50 nm on Si(1 0 0) wafers were bombarded at room temperature with 400-key Xe(+) ions at fluences of up to 3 x 10(16) cm(-2). We used either crystalline or pre-amorphized Si wafers the latter ones prepared by 1.0-keV Ar-ion implantation. The as-deposited or Xe-ion-irradiated samples were then isochronally annealed at temperatures up to 700 degrees C. Changes of the bilayer structures induced by ion irradiation and/or annealing were investigated with RBS, XRD and HRTEM. The mixing rate for the Co/c-Si couples, Delta sigma(2)/Phi = 3.0(4) nm(4), is higher than the value expected for ballistic mixing and about half the value typical for spike mixing. Mixing of pre-amorphized Si is much weaker relative to crystalline Si wafers, contrary to previous results obtained for Fe/Si bilayers. Annealing of irradiated samples produces very similar interdiffusion and phase formation patterns above 400 degrees C as in the non-irradiated Co/Si bilayers: the phase evolution follows the sequence Co(2)Si - GT CoSi - GT CoSi(2). (C) 2010 Elsevier B.V. All rights reserved.", journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms", title = "Xenon-ion-induced and thermal mixing of Co/Si bilayers and their interplay", volume = "269", number = "9", pages = "881-885", doi = "10.1016/j.nimb.2010.12.077" }
Novaković, M. M., Zhang, K., Popović, M., Bibić, N. M., Hofsaess, H.,& Lieb, K. P.. (2011). Xenon-ion-induced and thermal mixing of Co/Si bilayers and their interplay. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 269(9), 881-885. https://doi.org/10.1016/j.nimb.2010.12.077
Novaković MM, Zhang K, Popović M, Bibić NM, Hofsaess H, Lieb KP. Xenon-ion-induced and thermal mixing of Co/Si bilayers and their interplay. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2011;269(9):881-885. doi:10.1016/j.nimb.2010.12.077 .
Novaković, Mirjana M., Zhang, Kun, Popović, Maja, Bibić, Nataša M., Hofsaess, H., Lieb, K. P., "Xenon-ion-induced and thermal mixing of Co/Si bilayers and their interplay" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 269, no. 9 (2011):881-885, https://doi.org/10.1016/j.nimb.2010.12.077 . .