TY  - JOUR
AU  - Milosavljević, Momir
AU  - Stojanovic, N.
AU  - Peruško, Davor
AU  - Timotijević, B.
AU  - Toprek, Dragan
AU  - Kovač, Janez
AU  - Dražić, Goran
AU  - Jeynes, C.
PY  - 2012
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/4631
AB  - Interactions induced in Al/Ti multilayers by implantation of Ar ions at room temperature were investgated. Initial structures consisted of (Al/Ti) x 5 multilayers deposited by d.c. ion sputtering on Si(1 0 0) wafers, to a total thickness of similar to 250 nm. They were irradiated with 200 keV Ar+ ions, to the fluences from 5 x 10(15) to 4 x 10(16) ions/cm(2). It was found that ion irradiation induced a progressed intermixing of the multilayer constituents and Al-Ti nanoalloying for the highest applied fluence. The resulting nanocrystalline structure had a graded composition with non-reacted or interdiffused Al and Ti, and gamma-AlTi and AlTi3 intermetallic phases. Most intense reactivity was observed around mid depth of the multilayers, where most energy was deposited by the impact ions. It is presumed that Al-Ti chemical reaction is triggered by thermal spikes and further enhanced by chemical driving forces. The applied processing can be interesting for fabrication of tightly bond multilayered structures with gradual changes of their composition and properties. (C) 2011 Elsevier B. V. All rights reserved.
T2  - Applied Surface Science
T1  - Ion irradiation induced Al-Ti interaction in nano-scaled Al/Ti multilayers
VL  - 258
IS  - 6
SP  - 2043
EP  - 2046
DO  - 10.1016/j.apsusc.2011.04.107
ER  - 

@article{
author = "Milosavljević, Momir and Stojanovic, N. and Peruško, Davor and Timotijević, B. and Toprek, Dragan and Kovač, Janez and Dražić, Goran and Jeynes, C.",
year = "2012",
abstract = "Interactions induced in Al/Ti multilayers by implantation of Ar ions at room temperature were investgated. Initial structures consisted of (Al/Ti) x 5 multilayers deposited by d.c. ion sputtering on Si(1 0 0) wafers, to a total thickness of similar to 250 nm. They were irradiated with 200 keV Ar+ ions, to the fluences from 5 x 10(15) to 4 x 10(16) ions/cm(2). It was found that ion irradiation induced a progressed intermixing of the multilayer constituents and Al-Ti nanoalloying for the highest applied fluence. The resulting nanocrystalline structure had a graded composition with non-reacted or interdiffused Al and Ti, and gamma-AlTi and AlTi3 intermetallic phases. Most intense reactivity was observed around mid depth of the multilayers, where most energy was deposited by the impact ions. It is presumed that Al-Ti chemical reaction is triggered by thermal spikes and further enhanced by chemical driving forces. The applied processing can be interesting for fabrication of tightly bond multilayered structures with gradual changes of their composition and properties. (C) 2011 Elsevier B. V. All rights reserved.",
journal = "Applied Surface Science",
title = "Ion irradiation induced Al-Ti interaction in nano-scaled Al/Ti multilayers",
volume = "258",
number = "6",
pages = "2043-2046",
doi = "10.1016/j.apsusc.2011.04.107"
}

Milosavljević, M., Stojanovic, N., Peruško, D., Timotijević, B., Toprek, D., Kovač, J., Dražić, G.,& Jeynes, C.. (2012). Ion irradiation induced Al-Ti interaction in nano-scaled Al/Ti multilayers. in Applied Surface Science, 258(6), 2043-2046.
https://doi.org/10.1016/j.apsusc.2011.04.107

Milosavljević M, Stojanovic N, Peruško D, Timotijević B, Toprek D, Kovač J, Dražić G, Jeynes C. Ion irradiation induced Al-Ti interaction in nano-scaled Al/Ti multilayers. in Applied Surface Science. 2012;258(6):2043-2046.
doi:10.1016/j.apsusc.2011.04.107 .

Milosavljević, Momir, Stojanovic, N., Peruško, Davor, Timotijević, B., Toprek, Dragan, Kovač, Janez, Dražić, Goran, Jeynes, C., "Ion irradiation induced Al-Ti interaction in nano-scaled Al/Ti multilayers" in Applied Surface Science, 258, no. 6 (2012):2043-2046,
https://doi.org/10.1016/j.apsusc.2011.04.107 . .

TY  - JOUR
AU  - Shtereva, K. S.
AU  - Novotny, I.
AU  - Tvarozek, V.
AU  - Vojs, Marian
AU  - Flickyngerova, S.
AU  - Sutta, P.
AU  - Vincze, A.
AU  - Milosavljević, Momir
AU  - Jeynes, C.
AU  - Peng, N.
PY  - 2012
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5518
AB  - The electrical characteristics of gallium-doped zinc oxide (ZnO:Ga) thin films prepared by rf diode sputtering were altered via nitrogen implantation by performing two implants at 40 keV and 80 keV with doses of 1 x 10(15) and 1 x 10(16) cm(-2) to achieve a p-type semiconductor. An implantation of 1 x 10(15) cm(-2) N+-ions yielded a p-type with hole concentrations 10(17)-10(18) cm(-3) in some as-implanted samples. The films annealed at temperatures above 200 degrees C in O-2 and above 400 degrees C in N-2 were n-type with electron concentrations 10(17)-10(20) cm(-3). The higher nitrogen concentration (confirmed by SRIM and SIMS), in the films implanted with a 1 x 10(16) cm(-2) dose, resulted in lower electron concentrations, respectively, higher resistivity, due to compensation of donors by nitrogen acceptors. The electron concentrations ratio n((1) (x) (1015))/ n((1 x 1016)) decreases with increasing annealing temperature. Hall measurements showed that 1 x 10(16) cm(-2) N-implanted films became p-type after low temperature annealing in O-2 at 200 degrees C and in N-2 at 400 degrees C with hole concentrations of 3.2 x 10(17) cm(-3) and 1.6 x 10(19) cm(-3), respectively. Nitrogen-implanted ZnO:Ga films showed a c-axes preferred orientation of the crystallites. Annealing is shown to increase the average transmittance ( GT 80%) of the films and to cause bandgap widening (3.19-3.3 eV). (C) 2012 The Electrochemical Society. All rights reserved.
T2  - ECS Journal of Solid State Science and Technology
T1  - Carrier Control in Polycrystalline ZnO:Ga Thin Films via Nitrogen Implantation
VL  - 1
IS  - 5
SP  - P237
EP  - P240
DO  - 10.1149/2.003206jss
ER  - 

@article{
author = "Shtereva, K. S. and Novotny, I. and Tvarozek, V. and Vojs, Marian and Flickyngerova, S. and Sutta, P. and Vincze, A. and Milosavljević, Momir and Jeynes, C. and Peng, N.",
year = "2012",
abstract = "The electrical characteristics of gallium-doped zinc oxide (ZnO:Ga) thin films prepared by rf diode sputtering were altered via nitrogen implantation by performing two implants at 40 keV and 80 keV with doses of 1 x 10(15) and 1 x 10(16) cm(-2) to achieve a p-type semiconductor. An implantation of 1 x 10(15) cm(-2) N+-ions yielded a p-type with hole concentrations 10(17)-10(18) cm(-3) in some as-implanted samples. The films annealed at temperatures above 200 degrees C in O-2 and above 400 degrees C in N-2 were n-type with electron concentrations 10(17)-10(20) cm(-3). The higher nitrogen concentration (confirmed by SRIM and SIMS), in the films implanted with a 1 x 10(16) cm(-2) dose, resulted in lower electron concentrations, respectively, higher resistivity, due to compensation of donors by nitrogen acceptors. The electron concentrations ratio n((1) (x) (1015))/ n((1 x 1016)) decreases with increasing annealing temperature. Hall measurements showed that 1 x 10(16) cm(-2) N-implanted films became p-type after low temperature annealing in O-2 at 200 degrees C and in N-2 at 400 degrees C with hole concentrations of 3.2 x 10(17) cm(-3) and 1.6 x 10(19) cm(-3), respectively. Nitrogen-implanted ZnO:Ga films showed a c-axes preferred orientation of the crystallites. Annealing is shown to increase the average transmittance ( GT 80%) of the films and to cause bandgap widening (3.19-3.3 eV). (C) 2012 The Electrochemical Society. All rights reserved.",
journal = "ECS Journal of Solid State Science and Technology",
title = "Carrier Control in Polycrystalline ZnO:Ga Thin Films via Nitrogen Implantation",
volume = "1",
number = "5",
pages = "P237-P240",
doi = "10.1149/2.003206jss"
}

Shtereva, K. S., Novotny, I., Tvarozek, V., Vojs, M., Flickyngerova, S., Sutta, P., Vincze, A., Milosavljević, M., Jeynes, C.,& Peng, N.. (2012). Carrier Control in Polycrystalline ZnO:Ga Thin Films via Nitrogen Implantation. in ECS Journal of Solid State Science and Technology, 1(5), P237-P240.
https://doi.org/10.1149/2.003206jss

Shtereva KS, Novotny I, Tvarozek V, Vojs M, Flickyngerova S, Sutta P, Vincze A, Milosavljević M, Jeynes C, Peng N. Carrier Control in Polycrystalline ZnO:Ga Thin Films via Nitrogen Implantation. in ECS Journal of Solid State Science and Technology. 2012;1(5):P237-P240.
doi:10.1149/2.003206jss .

Shtereva, K. S., Novotny, I., Tvarozek, V., Vojs, Marian, Flickyngerova, S., Sutta, P., Vincze, A., Milosavljević, Momir, Jeynes, C., Peng, N., "Carrier Control in Polycrystalline ZnO:Ga Thin Films via Nitrogen Implantation" in ECS Journal of Solid State Science and Technology, 1, no. 5 (2012):P237-P240,
https://doi.org/10.1149/2.003206jss . .

TY  - JOUR
AU  - Berhanuddin, D. D.
AU  - Lourenco, M. A.
AU  - Jeynes, C.
AU  - Milosavljević, Momir
AU  - Gwilliam, R. M.
AU  - Homewood, Kevin P.
PY  - 2012
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5185
AB  - We investigate a new approach for efficient generation of the lasing G-centre (carbon substitutional-silicon self-interstitial complex) which crucially is fully compatible with standard silicon ultra-large-scale integration technology. Silicon wafers were implanted with carbon and irradiated with high energy protons to produce self-interstitials that are crucial in the formation of the G-centre. Rutherford backscattering spectrometry (RBS) and transmission electron microscopy were used to study the structure of the post-implanted silicon samples and to investigate the behaviour of the self-interstitials and damage introduced by the carbon and proton implantation. The effect of substrate pre-amorphisation on the G-centre luminescence intensity and formation properties was also investigated by implanting Ge prior to the carbon and proton irradiation. Photoluminescence measurements and RBS results show a significantly higher G-centre peak intensity and silicon yield, respectively, in samples without pre-amorphisation. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4766390]
T2  - Journal of Applied Physics
T1  - Structural analysis of silicon co-implanted with carbon and high energy proton for the formation of the lasing G-centre
VL  - 112
IS  - 10
DO  - 10.1063/1.4766390
ER  - 

@article{
author = "Berhanuddin, D. D. and Lourenco, M. A. and Jeynes, C. and Milosavljević, Momir and Gwilliam, R. M. and Homewood, Kevin P.",
year = "2012",
abstract = "We investigate a new approach for efficient generation of the lasing G-centre (carbon substitutional-silicon self-interstitial complex) which crucially is fully compatible with standard silicon ultra-large-scale integration technology. Silicon wafers were implanted with carbon and irradiated with high energy protons to produce self-interstitials that are crucial in the formation of the G-centre. Rutherford backscattering spectrometry (RBS) and transmission electron microscopy were used to study the structure of the post-implanted silicon samples and to investigate the behaviour of the self-interstitials and damage introduced by the carbon and proton implantation. The effect of substrate pre-amorphisation on the G-centre luminescence intensity and formation properties was also investigated by implanting Ge prior to the carbon and proton irradiation. Photoluminescence measurements and RBS results show a significantly higher G-centre peak intensity and silicon yield, respectively, in samples without pre-amorphisation. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4766390]",
journal = "Journal of Applied Physics",
title = "Structural analysis of silicon co-implanted with carbon and high energy proton for the formation of the lasing G-centre",
volume = "112",
number = "10",
doi = "10.1063/1.4766390"
}

Berhanuddin, D. D., Lourenco, M. A., Jeynes, C., Milosavljević, M., Gwilliam, R. M.,& Homewood, K. P.. (2012). Structural analysis of silicon co-implanted with carbon and high energy proton for the formation of the lasing G-centre. in Journal of Applied Physics, 112(10).
https://doi.org/10.1063/1.4766390

Berhanuddin DD, Lourenco MA, Jeynes C, Milosavljević M, Gwilliam RM, Homewood KP. Structural analysis of silicon co-implanted with carbon and high energy proton for the formation of the lasing G-centre. in Journal of Applied Physics. 2012;112(10).
doi:10.1063/1.4766390 .

Berhanuddin, D. D., Lourenco, M. A., Jeynes, C., Milosavljević, Momir, Gwilliam, R. M., Homewood, Kevin P., "Structural analysis of silicon co-implanted with carbon and high energy proton for the formation of the lasing G-centre" in Journal of Applied Physics, 112, no. 10 (2012),
https://doi.org/10.1063/1.4766390 . .

TY  - JOUR
AU  - Peruško, Davor
AU  - Milinović, Velimir
AU  - Mitrić, Miodrag
AU  - Petrović, Suzana
AU  - Jeynes, C.
AU  - Milosavljević, Momir
PY  - 2009
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/3905
AB  - Aluminum/titanium multilayers were sputter deposited on (100) Si wafers and irradiated with 200keV Ar(+) and N(2)(+) ions. Irradiation fluences were in the range from 5 . 10(15) to 4 . 10(16) ions cm(-2), for argon ions, and 1 . 10(17) to 2 . 10(17) ions cm(-2) for nitrogen. The samples were analyzed by Rutherford backscattering spectroscopy (RBS), transmission electron microscopy (TEM), and X-ray diffraction (XRD). Nano-hardness measurements were performed by Vickers method. Irradiation with argon ions induces mixing between Ti and Al layers, which is most pronounced in the vicinity of the projected range of implanted species. TEM cross-section analysis shows significant growth of grain size with the increase of Ar ion fluence. Implantation with nitrogen ions, up to these high fluences, causes a full intermixing of Al/Ti layers, resulting in multilayered structures with different content of Al, Ti, and N. In the latter case, nitrogen ion irradiation, probably, induces the formation of nitrides of titanium, aluminum, and AlTi. Nano-hardness measurements show significant increase of hardness for all applied ion fluences.
T2  - Materials and Manufacturing Processes
T1  - Ion Beam Modification of Al/Ti Multilayers
VL  - 24
IS  - 10-11
SP  - 1130
EP  - 1133
DO  - 10.1080/10426910903032246
ER  - 

@article{
author = "Peruško, Davor and Milinović, Velimir and Mitrić, Miodrag and Petrović, Suzana and Jeynes, C. and Milosavljević, Momir",
year = "2009",
abstract = "Aluminum/titanium multilayers were sputter deposited on (100) Si wafers and irradiated with 200keV Ar(+) and N(2)(+) ions. Irradiation fluences were in the range from 5 . 10(15) to 4 . 10(16) ions cm(-2), for argon ions, and 1 . 10(17) to 2 . 10(17) ions cm(-2) for nitrogen. The samples were analyzed by Rutherford backscattering spectroscopy (RBS), transmission electron microscopy (TEM), and X-ray diffraction (XRD). Nano-hardness measurements were performed by Vickers method. Irradiation with argon ions induces mixing between Ti and Al layers, which is most pronounced in the vicinity of the projected range of implanted species. TEM cross-section analysis shows significant growth of grain size with the increase of Ar ion fluence. Implantation with nitrogen ions, up to these high fluences, causes a full intermixing of Al/Ti layers, resulting in multilayered structures with different content of Al, Ti, and N. In the latter case, nitrogen ion irradiation, probably, induces the formation of nitrides of titanium, aluminum, and AlTi. Nano-hardness measurements show significant increase of hardness for all applied ion fluences.",
journal = "Materials and Manufacturing Processes",
title = "Ion Beam Modification of Al/Ti Multilayers",
volume = "24",
number = "10-11",
pages = "1130-1133",
doi = "10.1080/10426910903032246"
}

Peruško, D., Milinović, V., Mitrić, M., Petrović, S., Jeynes, C.,& Milosavljević, M.. (2009). Ion Beam Modification of Al/Ti Multilayers. in Materials and Manufacturing Processes, 24(10-11), 1130-1133.
https://doi.org/10.1080/10426910903032246

Peruško D, Milinović V, Mitrić M, Petrović S, Jeynes C, Milosavljević M. Ion Beam Modification of Al/Ti Multilayers. in Materials and Manufacturing Processes. 2009;24(10-11):1130-1133.
doi:10.1080/10426910903032246 .

Peruško, Davor, Milinović, Velimir, Mitrić, Miodrag, Petrović, Suzana, Jeynes, C., Milosavljević, Momir, "Ion Beam Modification of Al/Ti Multilayers" in Materials and Manufacturing Processes, 24, no. 10-11 (2009):1130-1133,
https://doi.org/10.1080/10426910903032246 . .

TY  - JOUR
AU  - Peruško, Davor
AU  - Webb, M. J.
AU  - Milinović, Velimir
AU  - Timotijević, B.
AU  - Miosavljevic, M.
AU  - Jeynes, C.
AU  - Webb, R. P.
PY  - 2008
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6762
AB  - A comparative study of the structural changes induced in Al/Ti and AlN/TiN multilayers by argon ion irradiation is presented. The layers were deposited on Si substrates, by ion sputtering in case of pure metals, and reactive ion sputtering in case of metal-nitrides, to a total thickness of similar to 270 nm. The multilayered structures consisted of 10 alternative similar to 27 nm layers of each component. For ion irradiation, we used 200 keV Ar+ ions having a projected range around mid-depth of the multilayered structures. Implantations were performed at room temperature, to the fluences from 5 x 10(15) to 4 x 10(16) ions/cm(2). Structural characterization included Rutherford backscattering analysis and transmission electron microscopy. The obtained results demonstrate that AlN/TiN multilayered system exhibits a much higher irradiation stability compared to the Al/Ti system. In Al/Ti multilayers, we observe a progressed intermixing with increasing the ion fluence, the behavior being closer to the ballistic than to the thermal spike model. In AlN/TiN system, no interface mixing was registered for any of the applied irradiation fluencies. Different behavior compared to Al/Ti system is assigned to immiscibility of AlN and TiN. (C) 2008 Elsevier B.V. All rights reserved.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - On the ion irradiation stability of Al/Ti versus AlN/TiN multilayers
VL  - 266
IS  - 8
SP  - 1749
EP  - 1753
DO  - 10.1016/j.nimb.2008.02.034
ER  - 

@article{
author = "Peruško, Davor and Webb, M. J. and Milinović, Velimir and Timotijević, B. and Miosavljevic, M. and Jeynes, C. and Webb, R. P.",
year = "2008",
abstract = "A comparative study of the structural changes induced in Al/Ti and AlN/TiN multilayers by argon ion irradiation is presented. The layers were deposited on Si substrates, by ion sputtering in case of pure metals, and reactive ion sputtering in case of metal-nitrides, to a total thickness of similar to 270 nm. The multilayered structures consisted of 10 alternative similar to 27 nm layers of each component. For ion irradiation, we used 200 keV Ar+ ions having a projected range around mid-depth of the multilayered structures. Implantations were performed at room temperature, to the fluences from 5 x 10(15) to 4 x 10(16) ions/cm(2). Structural characterization included Rutherford backscattering analysis and transmission electron microscopy. The obtained results demonstrate that AlN/TiN multilayered system exhibits a much higher irradiation stability compared to the Al/Ti system. In Al/Ti multilayers, we observe a progressed intermixing with increasing the ion fluence, the behavior being closer to the ballistic than to the thermal spike model. In AlN/TiN system, no interface mixing was registered for any of the applied irradiation fluencies. Different behavior compared to Al/Ti system is assigned to immiscibility of AlN and TiN. (C) 2008 Elsevier B.V. All rights reserved.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "On the ion irradiation stability of Al/Ti versus AlN/TiN multilayers",
volume = "266",
number = "8",
pages = "1749-1753",
doi = "10.1016/j.nimb.2008.02.034"
}

Peruško, D., Webb, M. J., Milinović, V., Timotijević, B., Miosavljevic, M., Jeynes, C.,& Webb, R. P.. (2008). On the ion irradiation stability of Al/Ti versus AlN/TiN multilayers. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 266(8), 1749-1753.
https://doi.org/10.1016/j.nimb.2008.02.034

Peruško D, Webb MJ, Milinović V, Timotijević B, Miosavljevic M, Jeynes C, Webb RP. On the ion irradiation stability of Al/Ti versus AlN/TiN multilayers. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2008;266(8):1749-1753.
doi:10.1016/j.nimb.2008.02.034 .

Peruško, Davor, Webb, M. J., Milinović, Velimir, Timotijević, B., Miosavljevic, M., Jeynes, C., Webb, R. P., "On the ion irradiation stability of Al/Ti versus AlN/TiN multilayers" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 266, no. 8 (2008):1749-1753,
https://doi.org/10.1016/j.nimb.2008.02.034 . .

TY  - JOUR
AU  - Peruško, Davor
AU  - Milosavljević, Momir
AU  - Milinović, Velimir
AU  - Timotijević, B.
AU  - Zalar, A.
AU  - Kovač, Janez
AU  - Pracek, B.
AU  - Jeynes, C.
PY  - 2008
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6768
AB  - We have studied the effects of high fluence nitrogen ion implantation on the structural changes in Al/Ti multilayers, with the aim of achieving multilayered metal-nitrides. The starting structures consisted of 10 alternate sputter-deposited Al and Ti films, with a total thickness of 270 nm, on (100) Si substrates. They were implanted with 200 keV N-2(+), to 1 x 10(17) and 2 x 10(17) at/cm(2), the projected range being around half-depth of the multilayers. Structural characterization was performed by Rutherford backscattering, Auger electron spectroscopy and transmission electron microscopy. It was found that ion implantation to the higher fluence induces a full intermixing of Al/Ti layers, resulting in a multilayered structure with different content of Al, Ti and N. The applied method can be interesting for preparation of graded (AI,Ti)N multilayers, with a controlled content of nitrogen and a controlled level of Al-Ti intermixing within the structures. (C) 2008 Elsevier B.V. All rights reserved.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - High fluence nitrogen implantation in Al/Ti multilayers
VL  - 266
IS  - 10
SP  - 2503
EP  - 2506
DO  - 10.1016/j.nimb.2008.03.034
ER  - 

@article{
author = "Peruško, Davor and Milosavljević, Momir and Milinović, Velimir and Timotijević, B. and Zalar, A. and Kovač, Janez and Pracek, B. and Jeynes, C.",
year = "2008",
abstract = "We have studied the effects of high fluence nitrogen ion implantation on the structural changes in Al/Ti multilayers, with the aim of achieving multilayered metal-nitrides. The starting structures consisted of 10 alternate sputter-deposited Al and Ti films, with a total thickness of 270 nm, on (100) Si substrates. They were implanted with 200 keV N-2(+), to 1 x 10(17) and 2 x 10(17) at/cm(2), the projected range being around half-depth of the multilayers. Structural characterization was performed by Rutherford backscattering, Auger electron spectroscopy and transmission electron microscopy. It was found that ion implantation to the higher fluence induces a full intermixing of Al/Ti layers, resulting in a multilayered structure with different content of Al, Ti and N. The applied method can be interesting for preparation of graded (AI,Ti)N multilayers, with a controlled content of nitrogen and a controlled level of Al-Ti intermixing within the structures. (C) 2008 Elsevier B.V. All rights reserved.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "High fluence nitrogen implantation in Al/Ti multilayers",
volume = "266",
number = "10",
pages = "2503-2506",
doi = "10.1016/j.nimb.2008.03.034"
}

Peruško, D., Milosavljević, M., Milinović, V., Timotijević, B., Zalar, A., Kovač, J., Pracek, B.,& Jeynes, C.. (2008). High fluence nitrogen implantation in Al/Ti multilayers. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 266(10), 2503-2506.
https://doi.org/10.1016/j.nimb.2008.03.034

Peruško D, Milosavljević M, Milinović V, Timotijević B, Zalar A, Kovač J, Pracek B, Jeynes C. High fluence nitrogen implantation in Al/Ti multilayers. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2008;266(10):2503-2506.
doi:10.1016/j.nimb.2008.03.034 .

Peruško, Davor, Milosavljević, Momir, Milinović, Velimir, Timotijević, B., Zalar, A., Kovač, Janez, Pracek, B., Jeynes, C., "High fluence nitrogen implantation in Al/Ti multilayers" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 266, no. 10 (2008):2503-2506,
https://doi.org/10.1016/j.nimb.2008.03.034 . .