Structural analysis of silicon co-implanted with carbon and high energy proton for the formation of the lasing G-centre
АуториBerhanuddin, D. D.
Lourenco, M. A.
Gwilliam, R. M.
Homewood, Kevin P.
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We investigate a new approach for efficient generation of the lasing G-centre (carbon substitutional-silicon self-interstitial complex) which crucially is fully compatible with standard silicon ultra-large-scale integration technology. Silicon wafers were implanted with carbon and irradiated with high energy protons to produce self-interstitials that are crucial in the formation of the G-centre. Rutherford backscattering spectrometry (RBS) and transmission electron microscopy were used to study the structure of the post-implanted silicon samples and to investigate the behaviour of the self-interstitials and damage introduced by the carbon and proton implantation. The effect of substrate pre-amorphisation on the G-centre luminescence intensity and formation properties was also investigated by implanting Ge prior to the carbon and proton irradiation. Photoluminescence measurements and RBS results show a significantly higher G-centre peak intensity and silicon yield, respectively, in samp...les without pre-amorphisation. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4766390]
Извор:Journal of Applied Physics, 2012, 112, 10
ISSN: 0021-8979 (print)