Determination of Lateral Sizes of Graphene Oxide Nanosheets and Implications for the 2D/Oxides integration

Abstract

Accurate determination and control of lateral size of graphene oxide (GO) nanosheets is important for their application in various technologies. The present study combines spin- coating and scanning electron microscopy (SEM) to reliably determine the lateral dimensions of GO nanosheets. Our methodology leverages precise surface functionalization of silicon substrates with optimized silicon oxide thickness for contrast enhancement and reduction of common SEM issues like nanosheet overlap and poor substrate differentiation. Compared to traditional drop-casting or dip-coating methods, spin-coating offers improved nanosheet distribution control, minimal overlap, and higher throughput, thus facilitating consistent and efficient nanosheet characterization. The study also critically assesses the advantages and limitations of widely used characterization techniques, including Raman spectroscopy, TEM, dynamic light scattering, and AFM. The obtained results were also discussed from the perspective of 2D/oxide thin films integration. By addressing methodological particularities this research enhances the reliability and accuracy of GO nanosheet size determination, contributing to better integration of 2D materials with semiconductor technologies, as an essential step toward functional device applications.