Hole doping as an efficient route to increase the Curie temperature in monolayer CrI3
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2025
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Two-dimensional van der Waals (vdW) magnets offer unprecedented opportunities to control magnetism at the atomic scale. Through charge carrier doping-realized by electrostatic gating, intercalation/adsorption, or interfacial charge transfer-one can efficiently tune exchange interactions and spin-orbit-induced effects in these systems. In this work, through a multi-scale theoretical framework combining density functional theory, spin Hamiltonian modeling, and Wannierfunction analysis, we choose monolayer CrI3 to unravel how carrier doping affects the isotropic as well as anisotropic exchange interactions in this prototypical vdW ferromagnet. The remarkable efficiency of hole doping in enhancing ferromagnetic exchange and magnetic anisotropy found in our study was explained through orbital-resolved analysis. Crucially, we demonstrated that unlike the undoped system-where isotropic exchange interactions govern magnetic long-range order- the hole-doped CrI3 exhibits anisotropic terms compa...rable in magnitude to isotropic ones. In particular, the magnetic anisotropy energy increases from 0.65 meV in undoped to 4.43 meV in strongly hole-doped CrI3, with the second-neighbor Dzyaloshinskii-Moriya interaction increasing from 0.12 meV to 2.01 meV. Finally, we show that a high concentration of holes can increase the Curie temperature from 56 K all the way up to 228 K. This work advances our understanding of doping-controlled magnetism in semiconducting 2D materials, demonstrating how anisotropy engineering can stabilize high-temperature magnetic order.
Кључне речи:
2D magnetism / anisotropic exchange / carrier doping / CrI3 / spin HamiltonianИзвор:
2d Materials, 2025, 12, 4, 45025-Финансирање / пројекти:
- Министарство науке, технолошког развоја и иновација Републике Србије, институционално финансирање - 200017 (Универзитет у Београду, Институт за нуклеарне науке Винча, Београд-Винча) (RS-MESTD-inst-2020-200017)
- Ministry of Education, Science, and Innovation of Montenegro
- Next-Generation EU programme PRIN-2022 project ‘SORBET: Spin-ORBit Effects in Two-dimensional magnets’ (IT MIUR grant no. 2022ZY8HJY)
- Van der Waals Heterostructures for Altermagnetic Spintronics
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Институција/група
VinčaTY - JOUR AU - Orozović, Marko AU - Šoškić, Božidar N. AU - Picozzi, Silvia AU - Šljivančanin, Željko AU - Stavrić, Srđan PY - 2025 UR - https://vinar.vin.bg.ac.rs/handle/123456789/16107 AB - Two-dimensional van der Waals (vdW) magnets offer unprecedented opportunities to control magnetism at the atomic scale. Through charge carrier doping-realized by electrostatic gating, intercalation/adsorption, or interfacial charge transfer-one can efficiently tune exchange interactions and spin-orbit-induced effects in these systems. In this work, through a multi-scale theoretical framework combining density functional theory, spin Hamiltonian modeling, and Wannierfunction analysis, we choose monolayer CrI3 to unravel how carrier doping affects the isotropic as well as anisotropic exchange interactions in this prototypical vdW ferromagnet. The remarkable efficiency of hole doping in enhancing ferromagnetic exchange and magnetic anisotropy found in our study was explained through orbital-resolved analysis. Crucially, we demonstrated that unlike the undoped system-where isotropic exchange interactions govern magnetic long-range order- the hole-doped CrI3 exhibits anisotropic terms comparable in magnitude to isotropic ones. In particular, the magnetic anisotropy energy increases from 0.65 meV in undoped to 4.43 meV in strongly hole-doped CrI3, with the second-neighbor Dzyaloshinskii-Moriya interaction increasing from 0.12 meV to 2.01 meV. Finally, we show that a high concentration of holes can increase the Curie temperature from 56 K all the way up to 228 K. This work advances our understanding of doping-controlled magnetism in semiconducting 2D materials, demonstrating how anisotropy engineering can stabilize high-temperature magnetic order. T2 - 2d Materials T1 - Hole doping as an efficient route to increase the Curie temperature in monolayer CrI3 VL - 12 IS - 4 SP - 45025 DO - 10.1088/2053-1583/ae1512 ER -
@article{
author = "Orozović, Marko and Šoškić, Božidar N. and Picozzi, Silvia and Šljivančanin, Željko and Stavrić, Srđan",
year = "2025",
abstract = "Two-dimensional van der Waals (vdW) magnets offer unprecedented opportunities to control magnetism at the atomic scale. Through charge carrier doping-realized by electrostatic gating, intercalation/adsorption, or interfacial charge transfer-one can efficiently tune exchange interactions and spin-orbit-induced effects in these systems. In this work, through a multi-scale theoretical framework combining density functional theory, spin Hamiltonian modeling, and Wannierfunction analysis, we choose monolayer CrI3 to unravel how carrier doping affects the isotropic as well as anisotropic exchange interactions in this prototypical vdW ferromagnet. The remarkable efficiency of hole doping in enhancing ferromagnetic exchange and magnetic anisotropy found in our study was explained through orbital-resolved analysis. Crucially, we demonstrated that unlike the undoped system-where isotropic exchange interactions govern magnetic long-range order- the hole-doped CrI3 exhibits anisotropic terms comparable in magnitude to isotropic ones. In particular, the magnetic anisotropy energy increases from 0.65 meV in undoped to 4.43 meV in strongly hole-doped CrI3, with the second-neighbor Dzyaloshinskii-Moriya interaction increasing from 0.12 meV to 2.01 meV. Finally, we show that a high concentration of holes can increase the Curie temperature from 56 K all the way up to 228 K. This work advances our understanding of doping-controlled magnetism in semiconducting 2D materials, demonstrating how anisotropy engineering can stabilize high-temperature magnetic order.",
journal = "2d Materials",
title = "Hole doping as an efficient route to increase the Curie temperature in monolayer CrI3",
volume = "12",
number = "4",
pages = "45025",
doi = "10.1088/2053-1583/ae1512"
}
Orozović, M., Šoškić, B. N., Picozzi, S., Šljivančanin, Ž.,& Stavrić, S.. (2025). Hole doping as an efficient route to increase the Curie temperature in monolayer CrI3. in 2d Materials, 12(4), 45025. https://doi.org/10.1088/2053-1583/ae1512
Orozović M, Šoškić BN, Picozzi S, Šljivančanin Ž, Stavrić S. Hole doping as an efficient route to increase the Curie temperature in monolayer CrI3. in 2d Materials. 2025;12(4):45025. doi:10.1088/2053-1583/ae1512 .
Orozović, Marko, Šoškić, Božidar N., Picozzi, Silvia, Šljivančanin, Željko, Stavrić, Srđan, "Hole doping as an efficient route to increase the Curie temperature in monolayer CrI3" in 2d Materials, 12, no. 4 (2025):45025, https://doi.org/10.1088/2053-1583/ae1512 . .

