TY  - JOUR
AU  - Nenadović, Miloš
AU  - Kisić, Danilo
AU  - Mirković, Miljana M.
AU  - Nenadović, Snežana S.
AU  - Kljajević, Ljiljana M.
PY  - 2021
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/9877
AB  - The implantation of high-density polyethylene (HDPE) has been conducted using Ag+ ions with energy of 60 keV, achieved fluences 1.5 and 10•1015 ions/cm2. Transmission electron microscopy (STEM) and field emission gun - scanning electron microscopy (FEG-SEM) showed the existence of nanoparticle clusters. X ray photoelectron spectroscopy (XPS) revealed the presence of silver in the sample surface region. The surface topography was studied by atomic force microscopy (AFM), while the surface composition uniformity was analyzed using phase imaging AFM. Optical characterization obtained by spectroscopic ellipsometry (SE) showed changes in refractive index, extinction coefficient and the optical band gap with the fluence of implanted ions.
T2  - Science of Sintering
T1  - Structural and optical properties of HDPE implanted with medium fluences silver ions
VL  - 53
IS  - 2
SP  - 187
EP  - 198
DO  - 10.2298/SOS2102187N
ER  - 

@article{
author = "Nenadović, Miloš and Kisić, Danilo and Mirković, Miljana M. and Nenadović, Snežana S. and Kljajević, Ljiljana M.",
year = "2021",
abstract = "The implantation of high-density polyethylene (HDPE) has been conducted using Ag+ ions with energy of 60 keV, achieved fluences 1.5 and 10•1015 ions/cm2. Transmission electron microscopy (STEM) and field emission gun - scanning electron microscopy (FEG-SEM) showed the existence of nanoparticle clusters. X ray photoelectron spectroscopy (XPS) revealed the presence of silver in the sample surface region. The surface topography was studied by atomic force microscopy (AFM), while the surface composition uniformity was analyzed using phase imaging AFM. Optical characterization obtained by spectroscopic ellipsometry (SE) showed changes in refractive index, extinction coefficient and the optical band gap with the fluence of implanted ions.",
journal = "Science of Sintering",
title = "Structural and optical properties of HDPE implanted with medium fluences silver ions",
volume = "53",
number = "2",
pages = "187-198",
doi = "10.2298/SOS2102187N"
}

Nenadović, M., Kisić, D., Mirković, M. M., Nenadović, S. S.,& Kljajević, L. M.. (2021). Structural and optical properties of HDPE implanted with medium fluences silver ions. in Science of Sintering, 53(2), 187-198.
https://doi.org/10.2298/SOS2102187N

Nenadović M, Kisić D, Mirković MM, Nenadović SS, Kljajević LM. Structural and optical properties of HDPE implanted with medium fluences silver ions. in Science of Sintering. 2021;53(2):187-198.
doi:10.2298/SOS2102187N .

Nenadović, Miloš, Kisić, Danilo, Mirković, Miljana M., Nenadović, Snežana S., Kljajević, Ljiljana M., "Structural and optical properties of HDPE implanted with medium fluences silver ions" in Science of Sintering, 53, no. 2 (2021):187-198,
https://doi.org/10.2298/SOS2102187N . .

TY  - JOUR
AU  - Nešić, Mioljub
AU  - Popović, Marica
AU  - Đorđević, Katarina
AU  - Miletić, Vedran
AU  - Jordović-Pavlović, Miroslava
AU  - Markushev, Dragan
AU  - Galović, Slobodanka
PY  - 2021
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/11865
AB  - In this work, theoretically/mathematically simulated (TMS) model is presented for the photoacoustic (PA) frequency response of a semiconductor in a minimum volume PA cell. By analyzing of the TMS model, the infuences of thermal difusivity and linear coefcient of thermal expansion on silicon sample PA frequency response were investigated and two methods were developed for their estimation. The frst one is a self consistent inverse procedure for solving the exponential problems of mathematical physics, based on regression. The second one, a well trained three-layer perceptron with back propagation, based upon theory of artifcial neural networks, is developed and presented. These two inverse problem solving concepts are applied to thermo-elastic characterization of silicon, compared and discussed in the domain of semiconductor characterization.
T2  - Optical and Quantum Electronics
T1  - Development and comparison of the techniques for solving the inverse problem in photoacoustic characterization of semiconductors
VL  - 53
IS  - 7
DO  - 10.1007/s11082-021-02958-0
ER  - 

@article{
author = "Nešić, Mioljub and Popović, Marica and Đorđević, Katarina and Miletić, Vedran and Jordović-Pavlović, Miroslava and Markushev, Dragan and Galović, Slobodanka",
year = "2021",
abstract = "In this work, theoretically/mathematically simulated (TMS) model is presented for the photoacoustic (PA) frequency response of a semiconductor in a minimum volume PA cell. By analyzing of the TMS model, the infuences of thermal difusivity and linear coefcient of thermal expansion on silicon sample PA frequency response were investigated and two methods were developed for their estimation. The frst one is a self consistent inverse procedure for solving the exponential problems of mathematical physics, based on regression. The second one, a well trained three-layer perceptron with back propagation, based upon theory of artifcial neural networks, is developed and presented. These two inverse problem solving concepts are applied to thermo-elastic characterization of silicon, compared and discussed in the domain of semiconductor characterization.",
journal = "Optical and Quantum Electronics",
title = "Development and comparison of the techniques for solving the inverse problem in photoacoustic characterization of semiconductors",
volume = "53",
number = "7",
doi = "10.1007/s11082-021-02958-0"
}

Nešić, M., Popović, M., Đorđević, K., Miletić, V., Jordović-Pavlović, M., Markushev, D.,& Galović, S.. (2021). Development and comparison of the techniques for solving the inverse problem in photoacoustic characterization of semiconductors. in Optical and Quantum Electronics, 53(7).
https://doi.org/10.1007/s11082-021-02958-0

Nešić M, Popović M, Đorđević K, Miletić V, Jordović-Pavlović M, Markushev D, Galović S. Development and comparison of the techniques for solving the inverse problem in photoacoustic characterization of semiconductors. in Optical and Quantum Electronics. 2021;53(7).
doi:10.1007/s11082-021-02958-0 .

Nešić, Mioljub, Popović, Marica, Đorđević, Katarina, Miletić, Vedran, Jordović-Pavlović, Miroslava, Markushev, Dragan, Galović, Slobodanka, "Development and comparison of the techniques for solving the inverse problem in photoacoustic characterization of semiconductors" in Optical and Quantum Electronics, 53, no. 7 (2021),
https://doi.org/10.1007/s11082-021-02958-0 . .

TY  - CONF
AU  - Stanković, Srboljub
AU  - Nikolić, Dragana
AU  - Kržanović, Nikola
AU  - Nađđerđ, Laslo
AU  - Davidović, Vojkan S.
PY  - 2019
UR  - https://ieeexplore.ieee.org/document/8889613/
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/8659
AB  - The paper presents the application of a numerical method for the determination of the absorbed dose rate of gamma and X radiation in the dielectric thin layer of hafnium dioxide (RfO2) or SiO2, which is located in the structure of the MOS capacitor. Considering the radiation characteristics of the selected dielectrics, it can be concluded that there are advantages of RfO2 over SiO2 in the radiation field with high-energy X-rays. Similar radiation effects should be expected for the interaction of dielectric material with gamma ray photons originating from a Co-60 source, both in the dielectric layer with SiO2 and in that with RfO2. It can be concluded that for the same radiation absorbed dose into the MOS capacitor with RfO2, there are a greater number of generated electron-hole pairs, in which case the value of effective trapping efficiency is smaller than if SiO2 was used. © 2019 IEEE.
PB  - IEEE
C3  - IEEE : 31st International Conference on Microelectronics (MIEL) : Book of proceedings
T1  - Comparison of Radiation Characteristics of HfO2 and SiO2 Incorporated in MOS Capacitor in Field of Gamma and X Radiation
SP  - 181
EP  - 184
DO  - 10.1109/MIEL.2019.8889613
ER  - 

@conference{
author = "Stanković, Srboljub and Nikolić, Dragana and Kržanović, Nikola and Nađđerđ, Laslo and Davidović, Vojkan S.",
year = "2019",
abstract = "The paper presents the application of a numerical method for the determination of the absorbed dose rate of gamma and X radiation in the dielectric thin layer of hafnium dioxide (RfO2) or SiO2, which is located in the structure of the MOS capacitor. Considering the radiation characteristics of the selected dielectrics, it can be concluded that there are advantages of RfO2 over SiO2 in the radiation field with high-energy X-rays. Similar radiation effects should be expected for the interaction of dielectric material with gamma ray photons originating from a Co-60 source, both in the dielectric layer with SiO2 and in that with RfO2. It can be concluded that for the same radiation absorbed dose into the MOS capacitor with RfO2, there are a greater number of generated electron-hole pairs, in which case the value of effective trapping efficiency is smaller than if SiO2 was used. © 2019 IEEE.",
publisher = "IEEE",
journal = "IEEE : 31st International Conference on Microelectronics (MIEL) : Book of proceedings",
title = "Comparison of Radiation Characteristics of HfO2 and SiO2 Incorporated in MOS Capacitor in Field of Gamma and X Radiation",
pages = "181-184",
doi = "10.1109/MIEL.2019.8889613"
}

Stanković, S., Nikolić, D., Kržanović, N., Nađđerđ, L.,& Davidović, V. S.. (2019). Comparison of Radiation Characteristics of HfO2 and SiO2 Incorporated in MOS Capacitor in Field of Gamma and X Radiation. in IEEE : 31st International Conference on Microelectronics (MIEL) : Book of proceedings
IEEE., 181-184.
https://doi.org/10.1109/MIEL.2019.8889613

Stanković S, Nikolić D, Kržanović N, Nađđerđ L, Davidović VS. Comparison of Radiation Characteristics of HfO2 and SiO2 Incorporated in MOS Capacitor in Field of Gamma and X Radiation. in IEEE : 31st International Conference on Microelectronics (MIEL) : Book of proceedings. 2019;:181-184.
doi:10.1109/MIEL.2019.8889613 .

Stanković, Srboljub, Nikolić, Dragana, Kržanović, Nikola, Nađđerđ, Laslo, Davidović, Vojkan S., "Comparison of Radiation Characteristics of HfO2 and SiO2 Incorporated in MOS Capacitor in Field of Gamma and X Radiation" in IEEE : 31st International Conference on Microelectronics (MIEL) : Book of proceedings (2019):181-184,
https://doi.org/10.1109/MIEL.2019.8889613 . .

TY  - JOUR
AU  - Borka Jovanović, Vesna
AU  - Borka, Duško
PY  - 2012
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6965
AB  - In this paper we present the main results of our investigation of the cq (q) over bar(q) over bar single-charm scalar tetraquarks and their SU(3)(F) representations: (15) over bar (S), (3) over bar (S), 6(A) and (3) over bar (A). We use the Fermi-Breit interaction Hamiltonian with SU(3) flavor symmetry breaking to determine the masses of the single-charm tetraquarks. We also discuss mass spectra obtained from meson and baryon mass fits. The mass spectra are very similar to those obtained with Glozman-Riska hyperfine interaction, and they indicate that some of the experimentally detected states may have tetraquark nature.
T2  - Romanian Journal of Physics
T1  - Mass Formulas for Single-Charm Tetraquarks with Fermi-Breit Hyperfine Interaction
VL  - 57
IS  - 5-6
SP  - 803
EP  - 815
UR  - https://hdl.handle.net/21.15107/rcub_vinar_6965
ER  - 

@article{
author = "Borka Jovanović, Vesna and Borka, Duško",
year = "2012",
abstract = "In this paper we present the main results of our investigation of the cq (q) over bar(q) over bar single-charm scalar tetraquarks and their SU(3)(F) representations: (15) over bar (S), (3) over bar (S), 6(A) and (3) over bar (A). We use the Fermi-Breit interaction Hamiltonian with SU(3) flavor symmetry breaking to determine the masses of the single-charm tetraquarks. We also discuss mass spectra obtained from meson and baryon mass fits. The mass spectra are very similar to those obtained with Glozman-Riska hyperfine interaction, and they indicate that some of the experimentally detected states may have tetraquark nature.",
journal = "Romanian Journal of Physics",
title = "Mass Formulas for Single-Charm Tetraquarks with Fermi-Breit Hyperfine Interaction",
volume = "57",
number = "5-6",
pages = "803-815",
url = "https://hdl.handle.net/21.15107/rcub_vinar_6965"
}

Borka Jovanović, V.,& Borka, D.. (2012). Mass Formulas for Single-Charm Tetraquarks with Fermi-Breit Hyperfine Interaction. in Romanian Journal of Physics, 57(5-6), 803-815.
https://hdl.handle.net/21.15107/rcub_vinar_6965

Borka Jovanović V, Borka D. Mass Formulas for Single-Charm Tetraquarks with Fermi-Breit Hyperfine Interaction. in Romanian Journal of Physics. 2012;57(5-6):803-815.
https://hdl.handle.net/21.15107/rcub_vinar_6965 .

Borka Jovanović, Vesna, Borka, Duško, "Mass Formulas for Single-Charm Tetraquarks with Fermi-Breit Hyperfine Interaction" in Romanian Journal of Physics, 57, no. 5-6 (2012):803-815,
https://hdl.handle.net/21.15107/rcub_vinar_6965 .