Development and comparison of the techniques for solving the inverse problem in photoacoustic characterization of semiconductors
Само за регистроване кориснике
2021
Аутори
Nešić, MioljubPopović, Marica
Đorđević, Katarina
Miletić, Vedran
Jordović-Pavlović, Miroslava
Markushev, Dragan
Galović, Slobodanka
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
In this work, theoretically/mathematically simulated (TMS) model is presented for the photoacoustic (PA) frequency response of a semiconductor in a minimum volume PA cell. By analyzing of the TMS model, the infuences of thermal difusivity and linear coefcient of thermal expansion on silicon sample PA frequency response were investigated and two methods were developed for their estimation. The frst one is a self consistent inverse procedure for solving the exponential problems of mathematical physics, based on regression. The second one, a well trained three-layer perceptron with back propagation, based upon theory of artifcial neural networks, is developed and presented. These two inverse problem solving concepts are applied to thermo-elastic characterization of silicon, compared and discussed in the domain of semiconductor characterization.
Кључне речи:
Photoacoustic / Inverse problem / Semiconductors / Minimum volume cell / Neural networks / Thermal difusivity / Linear coefcient of thermal expansionИзвор:
Optical and Quantum Electronics, 2021, 53, 7Финансирање / пројекти:
- Ministry of Education and Science of the Republic of Serbia
DOI: 10.1007/s11082-021-02958-0
ISSN: 0306-8919
WoS: 000670252400001
Scopus: 2-s2.0-85109213357
Колекције
Институција/група
VinčaTY - JOUR AU - Nešić, Mioljub AU - Popović, Marica AU - Đorđević, Katarina AU - Miletić, Vedran AU - Jordović-Pavlović, Miroslava AU - Markushev, Dragan AU - Galović, Slobodanka PY - 2021 UR - https://vinar.vin.bg.ac.rs/handle/123456789/11865 AB - In this work, theoretically/mathematically simulated (TMS) model is presented for the photoacoustic (PA) frequency response of a semiconductor in a minimum volume PA cell. By analyzing of the TMS model, the infuences of thermal difusivity and linear coefcient of thermal expansion on silicon sample PA frequency response were investigated and two methods were developed for their estimation. The frst one is a self consistent inverse procedure for solving the exponential problems of mathematical physics, based on regression. The second one, a well trained three-layer perceptron with back propagation, based upon theory of artifcial neural networks, is developed and presented. These two inverse problem solving concepts are applied to thermo-elastic characterization of silicon, compared and discussed in the domain of semiconductor characterization. T2 - Optical and Quantum Electronics T1 - Development and comparison of the techniques for solving the inverse problem in photoacoustic characterization of semiconductors VL - 53 IS - 7 DO - 10.1007/s11082-021-02958-0 ER -
@article{ author = "Nešić, Mioljub and Popović, Marica and Đorđević, Katarina and Miletić, Vedran and Jordović-Pavlović, Miroslava and Markushev, Dragan and Galović, Slobodanka", year = "2021", abstract = "In this work, theoretically/mathematically simulated (TMS) model is presented for the photoacoustic (PA) frequency response of a semiconductor in a minimum volume PA cell. By analyzing of the TMS model, the infuences of thermal difusivity and linear coefcient of thermal expansion on silicon sample PA frequency response were investigated and two methods were developed for their estimation. The frst one is a self consistent inverse procedure for solving the exponential problems of mathematical physics, based on regression. The second one, a well trained three-layer perceptron with back propagation, based upon theory of artifcial neural networks, is developed and presented. These two inverse problem solving concepts are applied to thermo-elastic characterization of silicon, compared and discussed in the domain of semiconductor characterization.", journal = "Optical and Quantum Electronics", title = "Development and comparison of the techniques for solving the inverse problem in photoacoustic characterization of semiconductors", volume = "53", number = "7", doi = "10.1007/s11082-021-02958-0" }
Nešić, M., Popović, M., Đorđević, K., Miletić, V., Jordović-Pavlović, M., Markushev, D.,& Galović, S.. (2021). Development and comparison of the techniques for solving the inverse problem in photoacoustic characterization of semiconductors. in Optical and Quantum Electronics, 53(7). https://doi.org/10.1007/s11082-021-02958-0
Nešić M, Popović M, Đorđević K, Miletić V, Jordović-Pavlović M, Markushev D, Galović S. Development and comparison of the techniques for solving the inverse problem in photoacoustic characterization of semiconductors. in Optical and Quantum Electronics. 2021;53(7). doi:10.1007/s11082-021-02958-0 .
Nešić, Mioljub, Popović, Marica, Đorđević, Katarina, Miletić, Vedran, Jordović-Pavlović, Miroslava, Markushev, Dragan, Galović, Slobodanka, "Development and comparison of the techniques for solving the inverse problem in photoacoustic characterization of semiconductors" in Optical and Quantum Electronics, 53, no. 7 (2021), https://doi.org/10.1007/s11082-021-02958-0 . .