Comparison of Radiation Characteristics of HfO2 and SiO2 Incorporated in MOS Capacitor in Field of Gamma and X Radiation
Само за регистроване кориснике
2019
Конференцијски прилог (Објављена верзија)
,
© 2019 IEEE
Метаподаци
Приказ свих података о документуАпстракт
The paper presents the application of a numerical method for the determination of the absorbed dose rate of gamma and X radiation in the dielectric thin layer of hafnium dioxide (RfO2) or SiO2, which is located in the structure of the MOS capacitor. Considering the radiation characteristics of the selected dielectrics, it can be concluded that there are advantages of RfO2 over SiO2 in the radiation field with high-energy X-rays. Similar radiation effects should be expected for the interaction of dielectric material with gamma ray photons originating from a Co-60 source, both in the dielectric layer with SiO2 and in that with RfO2. It can be concluded that for the same radiation absorbed dose into the MOS capacitor with RfO2, there are a greater number of generated electron-hole pairs, in which case the value of effective trapping efficiency is smaller than if SiO2 was used. © 2019 IEEE.
Извор:
IEEE : 31st International Conference on Microelectronics (MIEL) : Book of proceedings, 2019, 181-184Издавач:
- IEEE
Финансирање / пројекти:
- Ministry of Education and Science of the Republic of Serbia
Напомена:
- 31st IEEE International Conference on Microelectronics : MIEL; September 16-18, Niš, 2019
- Conference Code:153916
DOI: 10.1109/MIEL.2019.8889613
ISBN: 978-1-7281-3419-2
Scopus: 2-s2.0-85075333653
Колекције
Институција/група
VinčaTY - CONF AU - Stanković, Srboljub AU - Nikolić, Dragana AU - Kržanović, Nikola AU - Nađđerđ, Laslo AU - Davidović, Vojkan S. PY - 2019 UR - https://ieeexplore.ieee.org/document/8889613/ UR - https://vinar.vin.bg.ac.rs/handle/123456789/8659 AB - The paper presents the application of a numerical method for the determination of the absorbed dose rate of gamma and X radiation in the dielectric thin layer of hafnium dioxide (RfO2) or SiO2, which is located in the structure of the MOS capacitor. Considering the radiation characteristics of the selected dielectrics, it can be concluded that there are advantages of RfO2 over SiO2 in the radiation field with high-energy X-rays. Similar radiation effects should be expected for the interaction of dielectric material with gamma ray photons originating from a Co-60 source, both in the dielectric layer with SiO2 and in that with RfO2. It can be concluded that for the same radiation absorbed dose into the MOS capacitor with RfO2, there are a greater number of generated electron-hole pairs, in which case the value of effective trapping efficiency is smaller than if SiO2 was used. © 2019 IEEE. PB - IEEE C3 - IEEE : 31st International Conference on Microelectronics (MIEL) : Book of proceedings T1 - Comparison of Radiation Characteristics of HfO2 and SiO2 Incorporated in MOS Capacitor in Field of Gamma and X Radiation SP - 181 EP - 184 DO - 10.1109/MIEL.2019.8889613 ER -
@conference{ author = "Stanković, Srboljub and Nikolić, Dragana and Kržanović, Nikola and Nađđerđ, Laslo and Davidović, Vojkan S.", year = "2019", abstract = "The paper presents the application of a numerical method for the determination of the absorbed dose rate of gamma and X radiation in the dielectric thin layer of hafnium dioxide (RfO2) or SiO2, which is located in the structure of the MOS capacitor. Considering the radiation characteristics of the selected dielectrics, it can be concluded that there are advantages of RfO2 over SiO2 in the radiation field with high-energy X-rays. Similar radiation effects should be expected for the interaction of dielectric material with gamma ray photons originating from a Co-60 source, both in the dielectric layer with SiO2 and in that with RfO2. It can be concluded that for the same radiation absorbed dose into the MOS capacitor with RfO2, there are a greater number of generated electron-hole pairs, in which case the value of effective trapping efficiency is smaller than if SiO2 was used. © 2019 IEEE.", publisher = "IEEE", journal = "IEEE : 31st International Conference on Microelectronics (MIEL) : Book of proceedings", title = "Comparison of Radiation Characteristics of HfO2 and SiO2 Incorporated in MOS Capacitor in Field of Gamma and X Radiation", pages = "181-184", doi = "10.1109/MIEL.2019.8889613" }
Stanković, S., Nikolić, D., Kržanović, N., Nađđerđ, L.,& Davidović, V. S.. (2019). Comparison of Radiation Characteristics of HfO2 and SiO2 Incorporated in MOS Capacitor in Field of Gamma and X Radiation. in IEEE : 31st International Conference on Microelectronics (MIEL) : Book of proceedings IEEE., 181-184. https://doi.org/10.1109/MIEL.2019.8889613
Stanković S, Nikolić D, Kržanović N, Nađđerđ L, Davidović VS. Comparison of Radiation Characteristics of HfO2 and SiO2 Incorporated in MOS Capacitor in Field of Gamma and X Radiation. in IEEE : 31st International Conference on Microelectronics (MIEL) : Book of proceedings. 2019;:181-184. doi:10.1109/MIEL.2019.8889613 .
Stanković, Srboljub, Nikolić, Dragana, Kržanović, Nikola, Nađđerđ, Laslo, Davidović, Vojkan S., "Comparison of Radiation Characteristics of HfO2 and SiO2 Incorporated in MOS Capacitor in Field of Gamma and X Radiation" in IEEE : 31st International Conference on Microelectronics (MIEL) : Book of proceedings (2019):181-184, https://doi.org/10.1109/MIEL.2019.8889613 . .