TY  - JOUR
AU  - Gloginjić, Marko
AU  - Erich, Marko
AU  - Kokkoris, Michael
AU  - Liarokapis, Efthymios
AU  - Fazinić, Stjepko
AU  - Karlušić, Marko
AU  - Tomić Luketić, Kristina
AU  - Petrović, Srđan M.
PY  - 2021
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/9858
AB  - The hexagonal silicon carbide (6H-SiC) is one of materials used in nuclear applications, and as such is exposed to crystal damage inducing by variety of energetic particles like neutrons. In this article the 6H-SiC crystal lattice damage was introduced by the 4 MeV C3+ and 4 MeV Si3+ channelling ion implantation at the room temperature. The implantation of C and Si ions (so called self-ions) to the set of different fluences, achieves a 6H-SiC crystal lattice damage more similar to what the exposure to neutrons would produce. The 6H-SiC crystal damage has been investigated by the Elastic Backscattering spectra taken in the channeling orientation (EBS/C). EBS/C spectra of the implanted 6H-SiC samples were taken with 1.725 MeV and 1.860 MeV protons. By fitting the EBS/C spectra, the quantitative 6H-SiC crystal damage depth profiles were obtained. Further, the cross section of crystal's implanted region has been scanned with the micro-Raman (μR) technique for a comparison. In this way, the qualitative analysis of a non-crystalline phase as a function of the crystal depth was independently determined. Additionally, a scanning electron microscopy (SEM) image was taken of the implanted crystal cross sections. The comparison of the crystal damage profiles obtained by fitting EBS/C spectra with the corresponding ones obtained with the μR and SEM techniques shows very good consistency between them.
T2  - Journal of Nuclear Materials
T1  - The quantitative 6H-SiC crystal damage depth profiling
VL  - 555
SP  - 153143
DO  - 10.1016/j.jnucmat.2021.153143
ER  - 

@article{
author = "Gloginjić, Marko and Erich, Marko and Kokkoris, Michael and Liarokapis, Efthymios and Fazinić, Stjepko and Karlušić, Marko and Tomić Luketić, Kristina and Petrović, Srđan M.",
year = "2021",
abstract = "The hexagonal silicon carbide (6H-SiC) is one of materials used in nuclear applications, and as such is exposed to crystal damage inducing by variety of energetic particles like neutrons. In this article the 6H-SiC crystal lattice damage was introduced by the 4 MeV C3+ and 4 MeV Si3+ channelling ion implantation at the room temperature. The implantation of C and Si ions (so called self-ions) to the set of different fluences, achieves a 6H-SiC crystal lattice damage more similar to what the exposure to neutrons would produce. The 6H-SiC crystal damage has been investigated by the Elastic Backscattering spectra taken in the channeling orientation (EBS/C). EBS/C spectra of the implanted 6H-SiC samples were taken with 1.725 MeV and 1.860 MeV protons. By fitting the EBS/C spectra, the quantitative 6H-SiC crystal damage depth profiles were obtained. Further, the cross section of crystal's implanted region has been scanned with the micro-Raman (μR) technique for a comparison. In this way, the qualitative analysis of a non-crystalline phase as a function of the crystal depth was independently determined. Additionally, a scanning electron microscopy (SEM) image was taken of the implanted crystal cross sections. The comparison of the crystal damage profiles obtained by fitting EBS/C spectra with the corresponding ones obtained with the μR and SEM techniques shows very good consistency between them.",
journal = "Journal of Nuclear Materials",
title = "The quantitative 6H-SiC crystal damage depth profiling",
volume = "555",
pages = "153143",
doi = "10.1016/j.jnucmat.2021.153143"
}

Gloginjić, M., Erich, M., Kokkoris, M., Liarokapis, E., Fazinić, S., Karlušić, M., Tomić Luketić, K.,& Petrović, S. M.. (2021). The quantitative 6H-SiC crystal damage depth profiling. in Journal of Nuclear Materials, 555, 153143.
https://doi.org/10.1016/j.jnucmat.2021.153143

Gloginjić M, Erich M, Kokkoris M, Liarokapis E, Fazinić S, Karlušić M, Tomić Luketić K, Petrović SM. The quantitative 6H-SiC crystal damage depth profiling. in Journal of Nuclear Materials. 2021;555:153143.
doi:10.1016/j.jnucmat.2021.153143 .

Gloginjić, Marko, Erich, Marko, Kokkoris, Michael, Liarokapis, Efthymios, Fazinić, Stjepko, Karlušić, Marko, Tomić Luketić, Kristina, Petrović, Srđan M., "The quantitative 6H-SiC crystal damage depth profiling" in Journal of Nuclear Materials, 555 (2021):153143,
https://doi.org/10.1016/j.jnucmat.2021.153143 . .

TY  - JOUR
AU  - Flessa, Aikaterini
AU  - Ntemou, Eleni
AU  - Kokkoris, Michael
AU  - Liarokapis, Efthymios
AU  - Gloginjić, Marko
AU  - Petrović, Srđan M.
AU  - Erich, Marko
AU  - Fazinić, Stjepko
AU  - Karlušić, Marko
AU  - Tomić, Kristina
PY  - 2019
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/8439
AB  - A 6H-SiC single crystal implanted in channeling mode by 4-MeV C+3 and Si+3 ions at various doping levels has been examined by scanning electron microscopy (SEM) and micro-Raman spectroscopy in order to study the lattice distortions inflicted by the impinging ions. C ions create zones of strongly damaged regions, parallel to the front face of the wafer with width increasing with the amount of doping. As expected, Si has induced considerably more lattice distortions than C, and more than one order of magnitude less doping induces apparently the same effect as C. Despite the large laser spot size compared with the boundaries of the distorted regions, micro-Raman data provided results agreeing with the SEM pictures and the Monte Carlo calculations using the SRIM-2013 software. From the evolution of the crystalline peaks in the Raman spectra obtained across the damaged area, one can conclude that the impinging ions do not accommodate as defects in the lattice but mostly displace the ions breaking the bonds and destroying the long range order. The spatial correlation model that takes into consideration the intensity variation at the laser spot and the anticipated from Monte Carlo calculations for the collision events can reproduce the trend of the strong transversal optical phonon width indicating nanocrystallites of a few nanometers size in the most damaged area. © 2019 John Wiley & Sons, Ltd.
T2  - Journal of Raman Spectroscopy
T1  - Raman mapping of 4‐MeV C and Si channeling implantation of 6H‐SiC
VL  - 50
IS  - 8
SP  - 1186
EP  - 1196
DO  - 10.1002/jrs.5629
ER  - 

@article{
author = "Flessa, Aikaterini and Ntemou, Eleni and Kokkoris, Michael and Liarokapis, Efthymios and Gloginjić, Marko and Petrović, Srđan M. and Erich, Marko and Fazinić, Stjepko and Karlušić, Marko and Tomić, Kristina",
year = "2019",
abstract = "A 6H-SiC single crystal implanted in channeling mode by 4-MeV C+3 and Si+3 ions at various doping levels has been examined by scanning electron microscopy (SEM) and micro-Raman spectroscopy in order to study the lattice distortions inflicted by the impinging ions. C ions create zones of strongly damaged regions, parallel to the front face of the wafer with width increasing with the amount of doping. As expected, Si has induced considerably more lattice distortions than C, and more than one order of magnitude less doping induces apparently the same effect as C. Despite the large laser spot size compared with the boundaries of the distorted regions, micro-Raman data provided results agreeing with the SEM pictures and the Monte Carlo calculations using the SRIM-2013 software. From the evolution of the crystalline peaks in the Raman spectra obtained across the damaged area, one can conclude that the impinging ions do not accommodate as defects in the lattice but mostly displace the ions breaking the bonds and destroying the long range order. The spatial correlation model that takes into consideration the intensity variation at the laser spot and the anticipated from Monte Carlo calculations for the collision events can reproduce the trend of the strong transversal optical phonon width indicating nanocrystallites of a few nanometers size in the most damaged area. © 2019 John Wiley & Sons, Ltd.",
journal = "Journal of Raman Spectroscopy",
title = "Raman mapping of 4‐MeV C and Si channeling implantation of 6H‐SiC",
volume = "50",
number = "8",
pages = "1186-1196",
doi = "10.1002/jrs.5629"
}

Flessa, A., Ntemou, E., Kokkoris, M., Liarokapis, E., Gloginjić, M., Petrović, S. M., Erich, M., Fazinić, S., Karlušić, M.,& Tomić, K.. (2019). Raman mapping of 4‐MeV C and Si channeling implantation of 6H‐SiC. in Journal of Raman Spectroscopy, 50(8), 1186-1196.
https://doi.org/10.1002/jrs.5629

Flessa A, Ntemou E, Kokkoris M, Liarokapis E, Gloginjić M, Petrović SM, Erich M, Fazinić S, Karlušić M, Tomić K. Raman mapping of 4‐MeV C and Si channeling implantation of 6H‐SiC. in Journal of Raman Spectroscopy. 2019;50(8):1186-1196.
doi:10.1002/jrs.5629 .

Flessa, Aikaterini, Ntemou, Eleni, Kokkoris, Michael, Liarokapis, Efthymios, Gloginjić, Marko, Petrović, Srđan M., Erich, Marko, Fazinić, Stjepko, Karlušić, Marko, Tomić, Kristina, "Raman mapping of 4‐MeV C and Si channeling implantation of 6H‐SiC" in Journal of Raman Spectroscopy, 50, no. 8 (2019):1186-1196,
https://doi.org/10.1002/jrs.5629 . .

TY  - JOUR
PY  - 2018
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/7586
AB  - This work reports on the induced diamond crystal amorphization by 4 MeV carbon ions implanted in the < 1 0 0 > oriented crystal and its determination by application of RBS/C and EBS/C techniques. The spectra from the implanted samples were recorded for 1.2, 1.5, 1.75 and 1.9 MeV protons. For the two latter ones the strong resonance of the nuclear elastic scattering (12)c(p,p(0))C-12 at 1.737 MeV was explored. The backscattering channeling spectra were successfully fitted and the ion beam induced crystal amorphization depth profile was determined using a phenomenological approach, which is based on the properly defined Gompertz type dechanneling functions for protons in the < 1 0 0 > diamond crystal channels and the introduction of the concept of ion beam amorphization, which is implemented through our newly developed computer code CSIM.
T2  - Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms
T1  - Channeling implantation of high energy carbon ions in a diamond crystal: Determination of the induced crystal amorphization
VL  - 416
SP  - 89
EP  - 93
DO  - 10.1016/j.nimb.2017.12.001
ER  - 

@article{
year = "2018",
abstract = "This work reports on the induced diamond crystal amorphization by 4 MeV carbon ions implanted in the < 1 0 0 > oriented crystal and its determination by application of RBS/C and EBS/C techniques. The spectra from the implanted samples were recorded for 1.2, 1.5, 1.75 and 1.9 MeV protons. For the two latter ones the strong resonance of the nuclear elastic scattering (12)c(p,p(0))C-12 at 1.737 MeV was explored. The backscattering channeling spectra were successfully fitted and the ion beam induced crystal amorphization depth profile was determined using a phenomenological approach, which is based on the properly defined Gompertz type dechanneling functions for protons in the < 1 0 0 > diamond crystal channels and the introduction of the concept of ion beam amorphization, which is implemented through our newly developed computer code CSIM.",
journal = "Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms",
title = "Channeling implantation of high energy carbon ions in a diamond crystal: Determination of the induced crystal amorphization",
volume = "416",
pages = "89-93",
doi = "10.1016/j.nimb.2017.12.001"
}

(2018). Channeling implantation of high energy carbon ions in a diamond crystal: Determination of the induced crystal amorphization. in Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 416, 89-93.
https://doi.org/10.1016/j.nimb.2017.12.001

Channeling implantation of high energy carbon ions in a diamond crystal: Determination of the induced crystal amorphization. in Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms. 2018;416:89-93.
doi:10.1016/j.nimb.2017.12.001 .

"Channeling implantation of high energy carbon ions in a diamond crystal: Determination of the induced crystal amorphization" in Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 416 (2018):89-93,
https://doi.org/10.1016/j.nimb.2017.12.001 . .

TY  - JOUR
AU  - Erich, Marko
AU  - Kokkoris, Michael
AU  - Fazinić, Stjepko
AU  - Petrović, Srđan M.
PY  - 2016
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/1186
AB  - In the present work, elastic backscattering channeling spectra, EBS/C, of protons in a (100) diamond crystal were experimentally and theoretically studied via a new computer simulation code. Proton incident energies for EBS/C spectra were in the energy range from 1.0 MeV to 1.9 MeV. The energy range was chosen in order to explore a distinct strong resonance of the C-12(p,p(0))C-12 elastic scattering at 1737 key. The computer simulation code applied for the fitting of the experimental spectra in the random mode was compared with the corresponding SIMNRA results. In the channeling mode, it assumes a Gompertz type sigmoidal dechanneling function, which has two fitting parameters, x(c), and k, the dechanneling range and rate, respectively. It also uses a, ratio of the channeling to random energy losses, as a fitting parameter. It was observed that x(c) increases, k decreases and a stays relatively constant with the proton incident energy. These observations confirm the physical interpretation of the fitting parameters. Also, they constitute the basics for the further development of the code for the quantification of induced amorphization and depth profiling of implanted ions.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - EBS/C proton spectra from a virgin diamond crystal
VL  - 381
SP  - 96
EP  - 102
DO  - 10.1016/j.nimb.2016.05.030
ER  - 

@article{
author = "Erich, Marko and Kokkoris, Michael and Fazinić, Stjepko and Petrović, Srđan M.",
year = "2016",
abstract = "In the present work, elastic backscattering channeling spectra, EBS/C, of protons in a (100) diamond crystal were experimentally and theoretically studied via a new computer simulation code. Proton incident energies for EBS/C spectra were in the energy range from 1.0 MeV to 1.9 MeV. The energy range was chosen in order to explore a distinct strong resonance of the C-12(p,p(0))C-12 elastic scattering at 1737 key. The computer simulation code applied for the fitting of the experimental spectra in the random mode was compared with the corresponding SIMNRA results. In the channeling mode, it assumes a Gompertz type sigmoidal dechanneling function, which has two fitting parameters, x(c), and k, the dechanneling range and rate, respectively. It also uses a, ratio of the channeling to random energy losses, as a fitting parameter. It was observed that x(c) increases, k decreases and a stays relatively constant with the proton incident energy. These observations confirm the physical interpretation of the fitting parameters. Also, they constitute the basics for the further development of the code for the quantification of induced amorphization and depth profiling of implanted ions.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "EBS/C proton spectra from a virgin diamond crystal",
volume = "381",
pages = "96-102",
doi = "10.1016/j.nimb.2016.05.030"
}

Erich, M., Kokkoris, M., Fazinić, S.,& Petrović, S. M.. (2016). EBS/C proton spectra from a virgin diamond crystal. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 381, 96-102.
https://doi.org/10.1016/j.nimb.2016.05.030

Erich M, Kokkoris M, Fazinić S, Petrović SM. EBS/C proton spectra from a virgin diamond crystal. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2016;381:96-102.
doi:10.1016/j.nimb.2016.05.030 .

Erich, Marko, Kokkoris, Michael, Fazinić, Stjepko, Petrović, Srđan M., "EBS/C proton spectra from a virgin diamond crystal" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 381 (2016):96-102,
https://doi.org/10.1016/j.nimb.2016.05.030 . .

TY  - JOUR
AU  - Kopsalis, Ioannis
AU  - Paneta, Valentina
AU  - Kokkoris, Michael
AU  - Liarokapis, Efthymios
AU  - Erich, Marko
AU  - Petrović, Srđan M.
AU  - Fazinić, Stjepko
AU  - Tadić, Tonči
PY  - 2014
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/158
AB  - The effect of ion implantation (4MeV(12)C(2+), 5MeV(16)O(2+), and 8MeV(28)Si(2+)) on [110] silicon wafers in channeling and random orientation is investigated by micro-Raman spectroscopy. The profiles were measured using Scanning Electron Microscope (SEM) showing that the ions were penetrating deeper inside the wafer in the channeling case creating a 1-2 mu m wide strongly modified region and agreeing with the d-nuclear reaction analysis measurements. Micro-Raman spectroscopy was employed for the assessment of the lattice damage, probing the side surface of the cleaved wafers at submicron step. The phonon modifications show strong lattice distortions in zones parallel to the front surface of the wafers and at depths, which agree with the results of the characterization techniques. In these strongly damaged zones, there is a substantial reduction in the phonon intensity, a small shift in wavenumber position, and a large increase in the phonon width. On the basis of a modification of the phonon confinement model that takes under consideration the laser beam profile, the reduction in intensity of scattered light, and the nanocrystallite size distribution from the simulation of the lattice displacements, the main characteristics of the Raman spectra could be reproduced for the random C and O implantations. The results indicate that at a critical doping level, the induced defects and lattice distortions relax by breaking the silicon single crystal into nanocrystallites, thus creating the observed zones of strongly distorted lattice.
T2  - Journal of Raman Spectroscopy
T1  - Probing high-energy ion-implanted silicon by micro-Raman spectroscopy
VL  - 45
IS  - 8
SP  - 650
EP  - 656
DO  - 10.1002/jrs.4507
ER  - 

@article{
author = "Kopsalis, Ioannis and Paneta, Valentina and Kokkoris, Michael and Liarokapis, Efthymios and Erich, Marko and Petrović, Srđan M. and Fazinić, Stjepko and Tadić, Tonči",
year = "2014",
abstract = "The effect of ion implantation (4MeV(12)C(2+), 5MeV(16)O(2+), and 8MeV(28)Si(2+)) on [110] silicon wafers in channeling and random orientation is investigated by micro-Raman spectroscopy. The profiles were measured using Scanning Electron Microscope (SEM) showing that the ions were penetrating deeper inside the wafer in the channeling case creating a 1-2 mu m wide strongly modified region and agreeing with the d-nuclear reaction analysis measurements. Micro-Raman spectroscopy was employed for the assessment of the lattice damage, probing the side surface of the cleaved wafers at submicron step. The phonon modifications show strong lattice distortions in zones parallel to the front surface of the wafers and at depths, which agree with the results of the characterization techniques. In these strongly damaged zones, there is a substantial reduction in the phonon intensity, a small shift in wavenumber position, and a large increase in the phonon width. On the basis of a modification of the phonon confinement model that takes under consideration the laser beam profile, the reduction in intensity of scattered light, and the nanocrystallite size distribution from the simulation of the lattice displacements, the main characteristics of the Raman spectra could be reproduced for the random C and O implantations. The results indicate that at a critical doping level, the induced defects and lattice distortions relax by breaking the silicon single crystal into nanocrystallites, thus creating the observed zones of strongly distorted lattice.",
journal = "Journal of Raman Spectroscopy",
title = "Probing high-energy ion-implanted silicon by micro-Raman spectroscopy",
volume = "45",
number = "8",
pages = "650-656",
doi = "10.1002/jrs.4507"
}

Kopsalis, I., Paneta, V., Kokkoris, M., Liarokapis, E., Erich, M., Petrović, S. M., Fazinić, S.,& Tadić, T.. (2014). Probing high-energy ion-implanted silicon by micro-Raman spectroscopy. in Journal of Raman Spectroscopy, 45(8), 650-656.
https://doi.org/10.1002/jrs.4507

Kopsalis I, Paneta V, Kokkoris M, Liarokapis E, Erich M, Petrović SM, Fazinić S, Tadić T. Probing high-energy ion-implanted silicon by micro-Raman spectroscopy. in Journal of Raman Spectroscopy. 2014;45(8):650-656.
doi:10.1002/jrs.4507 .

Kopsalis, Ioannis, Paneta, Valentina, Kokkoris, Michael, Liarokapis, Efthymios, Erich, Marko, Petrović, Srđan M., Fazinić, Stjepko, Tadić, Tonči, "Probing high-energy ion-implanted silicon by micro-Raman spectroscopy" in Journal of Raman Spectroscopy, 45, no. 8 (2014):650-656,
https://doi.org/10.1002/jrs.4507 . .

TY  - JOUR
AU  - Paneta, Valentina
AU  - Erich, Marko
AU  - Fazinić, Stjepko
AU  - Kokkoris, Michael
AU  - Kopsalis, Ioannis
AU  - Petrović, Srđan M.
AU  - Tadić, Tonči
PY  - 2014
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5885
AB  - Ion implantation is one of the most important techniques used in the silicon-based semiconductor industry. Using the ion axial channeling effect, which occurs when an ion beam is oriented along a crystallographic axis, it is theoretically possible to implant ions deeper in the crystal, in comparison with the random ion beam-solid orientation, while - at the same time - minimizing the induced crystal lattice damage. In the present work, 4 MeV C-12(2+) and 5 MeV O-16(2+) ions were implanted in high-purity [1 1 0] Si crystal wafers at fluences of the order of similar to 10(17) particles/cm(2), in both the channeling and random orientations. The resulting profiles were measured using d-NRA, i.e. implementing the C-12(d,p(0)) and O-16(d,p(0),alpha(0)) reactions respectively, at E-d,E-lab = 1.2-1.4 MeV. The results were validated using SEM (Scanning Electron Microscopy), while the extent of crystalline damage was monitored during the implantation via RBS/C (Rutherford Backscattering Spectrometry/Channeling) spectra. The resulting profiles seem to be in good agreement with those obtained in the past for fluorine and nitrogen ions implanted in silicon, and clearly demonstrate the capabilities of high-energy channeling implantations, as well as, the accuracy of d-NRA (Nuclear Reaction Analysis) profiling measurements.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Investigation of deep implanted carbon and oxygen channeling profiles in [110] silicon, using d-NRA and SEM
VL  - 320
SP  - 6
EP  - 11
DO  - 10.1016/j.nimb.2013.11.020
ER  - 

@article{
author = "Paneta, Valentina and Erich, Marko and Fazinić, Stjepko and Kokkoris, Michael and Kopsalis, Ioannis and Petrović, Srđan M. and Tadić, Tonči",
year = "2014",
abstract = "Ion implantation is one of the most important techniques used in the silicon-based semiconductor industry. Using the ion axial channeling effect, which occurs when an ion beam is oriented along a crystallographic axis, it is theoretically possible to implant ions deeper in the crystal, in comparison with the random ion beam-solid orientation, while - at the same time - minimizing the induced crystal lattice damage. In the present work, 4 MeV C-12(2+) and 5 MeV O-16(2+) ions were implanted in high-purity [1 1 0] Si crystal wafers at fluences of the order of similar to 10(17) particles/cm(2), in both the channeling and random orientations. The resulting profiles were measured using d-NRA, i.e. implementing the C-12(d,p(0)) and O-16(d,p(0),alpha(0)) reactions respectively, at E-d,E-lab = 1.2-1.4 MeV. The results were validated using SEM (Scanning Electron Microscopy), while the extent of crystalline damage was monitored during the implantation via RBS/C (Rutherford Backscattering Spectrometry/Channeling) spectra. The resulting profiles seem to be in good agreement with those obtained in the past for fluorine and nitrogen ions implanted in silicon, and clearly demonstrate the capabilities of high-energy channeling implantations, as well as, the accuracy of d-NRA (Nuclear Reaction Analysis) profiling measurements.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Investigation of deep implanted carbon and oxygen channeling profiles in [110] silicon, using d-NRA and SEM",
volume = "320",
pages = "6-11",
doi = "10.1016/j.nimb.2013.11.020"
}

Paneta, V., Erich, M., Fazinić, S., Kokkoris, M., Kopsalis, I., Petrović, S. M.,& Tadić, T.. (2014). Investigation of deep implanted carbon and oxygen channeling profiles in [110] silicon, using d-NRA and SEM. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 320, 6-11.
https://doi.org/10.1016/j.nimb.2013.11.020

Paneta V, Erich M, Fazinić S, Kokkoris M, Kopsalis I, Petrović SM, Tadić T. Investigation of deep implanted carbon and oxygen channeling profiles in [110] silicon, using d-NRA and SEM. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2014;320:6-11.
doi:10.1016/j.nimb.2013.11.020 .

Paneta, Valentina, Erich, Marko, Fazinić, Stjepko, Kokkoris, Michael, Kopsalis, Ioannis, Petrović, Srđan M., Tadić, Tonči, "Investigation of deep implanted carbon and oxygen channeling profiles in [110] silicon, using d-NRA and SEM" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 320 (2014):6-11,
https://doi.org/10.1016/j.nimb.2013.11.020 . .