Schrempel, F.

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  • Schrempel, F. (3)
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Author's Bibliography

Effects of the Ar ions pre-amorphization of Si substrateon interface mixing of Fe/Si bilayers

Bibić, Nataša M.; Milinović, Velimir; Milosavljević, Momir; Schrempel, F.; Šiljegović, Milorad; Lieb, K. P.

(2008)

TY  - JOUR
AU  - Bibić, Nataša M.
AU  - Milinović, Velimir
AU  - Milosavljević, Momir
AU  - Schrempel, F.
AU  - Šiljegović, Milorad
AU  - Lieb, K. P.
PY  - 2008
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/3575
AB  - Ion beam mixing of Fe/Si bilayers, induced by 100 keV (40)Arions at room temperature was investigated. Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were applied for structural characterization. The main focus of this study was on the influence of the substrate structure on interface mixing. The influence of the substrate structure is due to the two classes of irradiated bilayers, Fe thin films deposited on crystalline or pre-amorphized Si substrates. An about 76% higher efficiency of atomic transport across the pre-amorphized Fe/a-Si interface as compared to that of Fe/c-Si bilayers was observed.
T2  - Journal of Microscopy, Oxford
T1  - Effects of the Ar ions pre-amorphization of Si substrateon interface mixing of Fe/Si bilayers
VL  - 232
IS  - 3
SP  - 539
EP  - 541
DO  - 10.1111/j.1365-2818.2008.02143.x
ER  - 
@article{
author = "Bibić, Nataša M. and Milinović, Velimir and Milosavljević, Momir and Schrempel, F. and Šiljegović, Milorad and Lieb, K. P.",
year = "2008",
abstract = "Ion beam mixing of Fe/Si bilayers, induced by 100 keV (40)Arions at room temperature was investigated. Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were applied for structural characterization. The main focus of this study was on the influence of the substrate structure on interface mixing. The influence of the substrate structure is due to the two classes of irradiated bilayers, Fe thin films deposited on crystalline or pre-amorphized Si substrates. An about 76% higher efficiency of atomic transport across the pre-amorphized Fe/a-Si interface as compared to that of Fe/c-Si bilayers was observed.",
journal = "Journal of Microscopy, Oxford",
title = "Effects of the Ar ions pre-amorphization of Si substrateon interface mixing of Fe/Si bilayers",
volume = "232",
number = "3",
pages = "539-541",
doi = "10.1111/j.1365-2818.2008.02143.x"
}
Bibić, N. M., Milinović, V., Milosavljević, M., Schrempel, F., Šiljegović, M.,& Lieb, K. P.. (2008). Effects of the Ar ions pre-amorphization of Si substrateon interface mixing of Fe/Si bilayers. in Journal of Microscopy, Oxford, 232(3), 539-541.
https://doi.org/10.1111/j.1365-2818.2008.02143.x
Bibić NM, Milinović V, Milosavljević M, Schrempel F, Šiljegović M, Lieb KP. Effects of the Ar ions pre-amorphization of Si substrateon interface mixing of Fe/Si bilayers. in Journal of Microscopy, Oxford. 2008;232(3):539-541.
doi:10.1111/j.1365-2818.2008.02143.x .
Bibić, Nataša M., Milinović, Velimir, Milosavljević, Momir, Schrempel, F., Šiljegović, Milorad, Lieb, K. P., "Effects of the Ar ions pre-amorphization of Si substrateon interface mixing of Fe/Si bilayers" in Journal of Microscopy, Oxford, 232, no. 3 (2008):539-541,
https://doi.org/10.1111/j.1365-2818.2008.02143.x . .
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Enhanced interface mixing of Fe/Si bilayers on preamorphized silicon substrates

Bibić, Nataša M.; Milinović, Velimir; Lieb, K. P.; Milosavljević, Momir; Schrempel, F.

(2007)

TY  - JOUR
AU  - Bibić, Nataša M.
AU  - Milinović, Velimir
AU  - Lieb, K. P.
AU  - Milosavljević, Momir
AU  - Schrempel, F.
PY  - 2007
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/3150
AB  - Ion-beam mixing of Fe/Si bilayers, induced at room temperature by 100 keV Ar-40(+), 180 keV Kr-86(+), and 250 keV Xe-132(+) ions, was investigated. The study focuses on the influence of the preamorphization of the Si(100) substrates by 1.0 keV Ar-ion irradiation. Rutherford backscattering spectroscopy as well as scanning and transmission electron microscopies were applied for structural characterization. The mixing rate across the preamorphized Fe/Si interface was, on average, by 76% higher than that of crystalline Si. (c) 2007 American Institute of Physics.
T2  - Applied Physics Letters
T1  - Enhanced interface mixing of Fe/Si bilayers on preamorphized silicon substrates
VL  - 90
IS  - 5
DO  - 10.1063/1.2432952
ER  - 
@article{
author = "Bibić, Nataša M. and Milinović, Velimir and Lieb, K. P. and Milosavljević, Momir and Schrempel, F.",
year = "2007",
abstract = "Ion-beam mixing of Fe/Si bilayers, induced at room temperature by 100 keV Ar-40(+), 180 keV Kr-86(+), and 250 keV Xe-132(+) ions, was investigated. The study focuses on the influence of the preamorphization of the Si(100) substrates by 1.0 keV Ar-ion irradiation. Rutherford backscattering spectroscopy as well as scanning and transmission electron microscopies were applied for structural characterization. The mixing rate across the preamorphized Fe/Si interface was, on average, by 76% higher than that of crystalline Si. (c) 2007 American Institute of Physics.",
journal = "Applied Physics Letters",
title = "Enhanced interface mixing of Fe/Si bilayers on preamorphized silicon substrates",
volume = "90",
number = "5",
doi = "10.1063/1.2432952"
}
Bibić, N. M., Milinović, V., Lieb, K. P., Milosavljević, M.,& Schrempel, F.. (2007). Enhanced interface mixing of Fe/Si bilayers on preamorphized silicon substrates. in Applied Physics Letters, 90(5).
https://doi.org/10.1063/1.2432952
Bibić NM, Milinović V, Lieb KP, Milosavljević M, Schrempel F. Enhanced interface mixing of Fe/Si bilayers on preamorphized silicon substrates. in Applied Physics Letters. 2007;90(5).
doi:10.1063/1.2432952 .
Bibić, Nataša M., Milinović, Velimir, Lieb, K. P., Milosavljević, Momir, Schrempel, F., "Enhanced interface mixing of Fe/Si bilayers on preamorphized silicon substrates" in Applied Physics Letters, 90, no. 5 (2007),
https://doi.org/10.1063/1.2432952 . .
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Interface mixing of Fe/Si bilayers by noble-gas ions: Are there effects of the ionic charge state?

Milinović, Velimir; Bibić, Nataša M.; Lieb, K. P.; Milosavljević, Momir; Schrempel, F.

(2007)

TY  - JOUR
AU  - Milinović, Velimir
AU  - Bibić, Nataša M.
AU  - Lieb, K. P.
AU  - Milosavljević, Momir
AU  - Schrempel, F.
PY  - 2007
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6655
AB  - Charge-state equilibration of ions moving in matter occurs within femtoseconds and when penetrating nanometer depths. Ion-beam mixing in bilayers, tens of nm thick, should therefore not depend on the charge state of the projectiles. As the experimental situation for metal/silicon bilayers irradiated with noble-gas ions of different charge-states is ambiguous, we studied interface mixing of Fe/Si(1 0 0) bilayers, induced by 100 keV Ar-40, 180 keV Kr-86 and 250 keV Xe-132 ions, either singly and multiply charged (Ar8+, Kr11+, Xe17+). No significant influence of the ionic charge-state was established for Kr and Xe ions; a slightly higher mixing rate was found for Ar8+ than for Ar1+ irradiation. (c) 2007 Elsevier B.V. All rights reserved.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Interface mixing of Fe/Si bilayers by noble-gas ions: Are there effects of the ionic charge state?
VL  - 257
SP  - 605
EP  - 608
DO  - 10.1016/j.nimb.2007.01.063
ER  - 
@article{
author = "Milinović, Velimir and Bibić, Nataša M. and Lieb, K. P. and Milosavljević, Momir and Schrempel, F.",
year = "2007",
abstract = "Charge-state equilibration of ions moving in matter occurs within femtoseconds and when penetrating nanometer depths. Ion-beam mixing in bilayers, tens of nm thick, should therefore not depend on the charge state of the projectiles. As the experimental situation for metal/silicon bilayers irradiated with noble-gas ions of different charge-states is ambiguous, we studied interface mixing of Fe/Si(1 0 0) bilayers, induced by 100 keV Ar-40, 180 keV Kr-86 and 250 keV Xe-132 ions, either singly and multiply charged (Ar8+, Kr11+, Xe17+). No significant influence of the ionic charge-state was established for Kr and Xe ions; a slightly higher mixing rate was found for Ar8+ than for Ar1+ irradiation. (c) 2007 Elsevier B.V. All rights reserved.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Interface mixing of Fe/Si bilayers by noble-gas ions: Are there effects of the ionic charge state?",
volume = "257",
pages = "605-608",
doi = "10.1016/j.nimb.2007.01.063"
}
Milinović, V., Bibić, N. M., Lieb, K. P., Milosavljević, M.,& Schrempel, F.. (2007). Interface mixing of Fe/Si bilayers by noble-gas ions: Are there effects of the ionic charge state?. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 257, 605-608.
https://doi.org/10.1016/j.nimb.2007.01.063
Milinović V, Bibić NM, Lieb KP, Milosavljević M, Schrempel F. Interface mixing of Fe/Si bilayers by noble-gas ions: Are there effects of the ionic charge state?. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2007;257:605-608.
doi:10.1016/j.nimb.2007.01.063 .
Milinović, Velimir, Bibić, Nataša M., Lieb, K. P., Milosavljević, Momir, Schrempel, F., "Interface mixing of Fe/Si bilayers by noble-gas ions: Are there effects of the ionic charge state?" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 257 (2007):605-608,
https://doi.org/10.1016/j.nimb.2007.01.063 . .
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