TY  - JOUR
AU  - Rađenović, Branislav
AU  - Beličev, Petar
AU  - Radmilovic-Radjenovic, Marija
PY  - 2011
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/4663
AB  - Here, we present some results of the simulations of the transport of an H- ion beam bunch through the spiral inflector of the VINCY cyclotron. Calculations of the electric field were performed using a finite-element method, whereas the trajectories of the particles in the bunch were tracked by solving Newton-Lorentz equations of motion with direct Coulomb interaction between particles included.
T2  - IEEE Transactions on Plasma Science
T1  - A Simulation Framework for the Ion Transport in Spiral Inflectors
VL  - 39
IS  - 11
SP  - 2612
EP  - 2613
DO  - 10.1109/TPS.2011.2155095
ER  - 

@article{
author = "Rađenović, Branislav and Beličev, Petar and Radmilovic-Radjenovic, Marija",
year = "2011",
abstract = "Here, we present some results of the simulations of the transport of an H- ion beam bunch through the spiral inflector of the VINCY cyclotron. Calculations of the electric field were performed using a finite-element method, whereas the trajectories of the particles in the bunch were tracked by solving Newton-Lorentz equations of motion with direct Coulomb interaction between particles included.",
journal = "IEEE Transactions on Plasma Science",
title = "A Simulation Framework for the Ion Transport in Spiral Inflectors",
volume = "39",
number = "11",
pages = "2612-2613",
doi = "10.1109/TPS.2011.2155095"
}

Rađenović, B., Beličev, P.,& Radmilovic-Radjenovic, M.. (2011). A Simulation Framework for the Ion Transport in Spiral Inflectors. in IEEE Transactions on Plasma Science, 39(11), 2612-2613.
https://doi.org/10.1109/TPS.2011.2155095

Rađenović B, Beličev P, Radmilovic-Radjenovic M. A Simulation Framework for the Ion Transport in Spiral Inflectors. in IEEE Transactions on Plasma Science. 2011;39(11):2612-2613.
doi:10.1109/TPS.2011.2155095 .

Rađenović, Branislav, Beličev, Petar, Radmilovic-Radjenovic, Marija, "A Simulation Framework for the Ion Transport in Spiral Inflectors" in IEEE Transactions on Plasma Science, 39, no. 11 (2011):2612-2613,
https://doi.org/10.1109/TPS.2011.2155095 . .

TY  - JOUR
AU  - Rađenović, Branislav
AU  - Radmilovic-Radjenovic, Marija
AU  - Mitrić, Miodrag
PY  - 2010
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/4009
AB  - In this paper a methodology for the three dimensional (3D) modeling and simulation of the profile evolution during anisotropic wet etching of silicon based on the level set method is presented. Etching rate anisotropy in silicon is modeled taking into account full silicon symmetry properties, by means of the interpolation technique using experimentally obtained values for the etching rates along thirteen principal and high index directions in KOH solutions. The resulting level set equations are solved using an open source implementation of the sparse field method (ITK library, developed in medical image processing community), extended for the case of non-convex Hamiltonians. Simulation results for some interesting initial 3D shapes, as well as some more practical examples illustrating anisotropic etching simulation in the presence of masks (simple square aperture mask, convex corner undercutting and convex corner compensation, formation of suspended structures) are shown also. The obtained results show that level set method can be used as an effective tool for wet etching process modeling, and that is a viable alternative to the Cellular Automata method which now prevails in the simulations of the wet etching process.
T2  - Sensors
T1  - Level Set Approach to Anisotropic Wet Etching of Silicon
VL  - 10
IS  - 5
SP  - 4950
EP  - 4967
DO  - 10.3390/s100504950
ER  - 

@article{
author = "Rađenović, Branislav and Radmilovic-Radjenovic, Marija and Mitrić, Miodrag",
year = "2010",
abstract = "In this paper a methodology for the three dimensional (3D) modeling and simulation of the profile evolution during anisotropic wet etching of silicon based on the level set method is presented. Etching rate anisotropy in silicon is modeled taking into account full silicon symmetry properties, by means of the interpolation technique using experimentally obtained values for the etching rates along thirteen principal and high index directions in KOH solutions. The resulting level set equations are solved using an open source implementation of the sparse field method (ITK library, developed in medical image processing community), extended for the case of non-convex Hamiltonians. Simulation results for some interesting initial 3D shapes, as well as some more practical examples illustrating anisotropic etching simulation in the presence of masks (simple square aperture mask, convex corner undercutting and convex corner compensation, formation of suspended structures) are shown also. The obtained results show that level set method can be used as an effective tool for wet etching process modeling, and that is a viable alternative to the Cellular Automata method which now prevails in the simulations of the wet etching process.",
journal = "Sensors",
title = "Level Set Approach to Anisotropic Wet Etching of Silicon",
volume = "10",
number = "5",
pages = "4950-4967",
doi = "10.3390/s100504950"
}

Rađenović, B., Radmilovic-Radjenovic, M.,& Mitrić, M.. (2010). Level Set Approach to Anisotropic Wet Etching of Silicon. in Sensors, 10(5), 4950-4967.
https://doi.org/10.3390/s100504950

Rađenović B, Radmilovic-Radjenovic M, Mitrić M. Level Set Approach to Anisotropic Wet Etching of Silicon. in Sensors. 2010;10(5):4950-4967.
doi:10.3390/s100504950 .

Rađenović, Branislav, Radmilovic-Radjenovic, Marija, Mitrić, Miodrag, "Level Set Approach to Anisotropic Wet Etching of Silicon" in Sensors, 10, no. 5 (2010):4950-4967,
https://doi.org/10.3390/s100504950 . .

TY  - JOUR
AU  - Radmilovic-Radjenovic, Marija
AU  - Rađenović, Branislav
PY  - 2008
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6758
AB  - The phenomenon of field emission plays a significant role in the deviation of the breakdown voltage from that predicted by Paschens law within the range of high electric fields. High fields obtained in small gaps may enhance the secondary electron emission and such enhancement could lead to a lowering of the breakdown voltage and a departure from the Paschen curve. In this paper, the dc breakdown characteristics of the discharge in the micrometric regime were extensively studied by the theoretical approach including ion-enhanced field emission. In addition, semi-empirical expressions for the dependence of the breakdown voltage on the gap spacing and on the pressure based on the numerical solutions of the equation that describes the dc breakdown criteria have been proposed.
T2  - Plasma Sources Science and Technology
T1  - Theoretical study of the electron field emission phenomena in the generation of a micrometer scale discharge
VL  - 17
IS  - 2
DO  - 10.1088/0963-0252/17/2/024005
ER  - 

@article{
author = "Radmilovic-Radjenovic, Marija and Rađenović, Branislav",
year = "2008",
abstract = "The phenomenon of field emission plays a significant role in the deviation of the breakdown voltage from that predicted by Paschens law within the range of high electric fields. High fields obtained in small gaps may enhance the secondary electron emission and such enhancement could lead to a lowering of the breakdown voltage and a departure from the Paschen curve. In this paper, the dc breakdown characteristics of the discharge in the micrometric regime were extensively studied by the theoretical approach including ion-enhanced field emission. In addition, semi-empirical expressions for the dependence of the breakdown voltage on the gap spacing and on the pressure based on the numerical solutions of the equation that describes the dc breakdown criteria have been proposed.",
journal = "Plasma Sources Science and Technology",
title = "Theoretical study of the electron field emission phenomena in the generation of a micrometer scale discharge",
volume = "17",
number = "2",
doi = "10.1088/0963-0252/17/2/024005"
}

Radmilovic-Radjenovic, M.,& Rađenović, B.. (2008). Theoretical study of the electron field emission phenomena in the generation of a micrometer scale discharge. in Plasma Sources Science and Technology, 17(2).
https://doi.org/10.1088/0963-0252/17/2/024005

Radmilovic-Radjenovic M, Rađenović B. Theoretical study of the electron field emission phenomena in the generation of a micrometer scale discharge. in Plasma Sources Science and Technology. 2008;17(2).
doi:10.1088/0963-0252/17/2/024005 .

Radmilovic-Radjenovic, Marija, Rađenović, Branislav, "Theoretical study of the electron field emission phenomena in the generation of a micrometer scale discharge" in Plasma Sources Science and Technology, 17, no. 2 (2008),
https://doi.org/10.1088/0963-0252/17/2/024005 . .

TY  - CONF
AU  - Rađenović, Branislav
AU  - Radmilovic-Radjenovic, Marija
PY  - 2007
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6757
AB  - The ability to simulate feature charging was added to the 3D level set profile evolution simulator described earlier. A comprehensive simulation of etching profile evolution requires knowledge of the etching rates at all the points of the profile surface during the etching process. Electrons do not contribute directly to the material removal, but they are the source, together with positive ions, of the profile charging that has many negative consequences on the final outcome of the process especially in the case of insulating material etching. The ion and electron fluxes were computed along the feature using Monte Carlo method. The surface potential profiles and electric field for the entire feature were generated by solving Laplace equation using finite elements method. Calculations were performed in the case of simplified model of Ar+/CF4 non-equilibrium plasma etching of SiO2. The time dependence of the profile charging during SiO2 etching in plasma is presented.
C3  - Journal of Physics: Conference Series
T1  - 3D Etching profile evolution simulations: Time dependence analysis of the profile charging during SiO2 etching in plasma
VL  - 86
DO  - 10.1088/1742-6596/86/1/012017
ER  - 

@conference{
author = "Rađenović, Branislav and Radmilovic-Radjenovic, Marija",
year = "2007",
abstract = "The ability to simulate feature charging was added to the 3D level set profile evolution simulator described earlier. A comprehensive simulation of etching profile evolution requires knowledge of the etching rates at all the points of the profile surface during the etching process. Electrons do not contribute directly to the material removal, but they are the source, together with positive ions, of the profile charging that has many negative consequences on the final outcome of the process especially in the case of insulating material etching. The ion and electron fluxes were computed along the feature using Monte Carlo method. The surface potential profiles and electric field for the entire feature were generated by solving Laplace equation using finite elements method. Calculations were performed in the case of simplified model of Ar+/CF4 non-equilibrium plasma etching of SiO2. The time dependence of the profile charging during SiO2 etching in plasma is presented.",
journal = "Journal of Physics: Conference Series",
title = "3D Etching profile evolution simulations: Time dependence analysis of the profile charging during SiO2 etching in plasma",
volume = "86",
doi = "10.1088/1742-6596/86/1/012017"
}

Rađenović, B.,& Radmilovic-Radjenovic, M.. (2007). 3D Etching profile evolution simulations: Time dependence analysis of the profile charging during SiO2 etching in plasma. in Journal of Physics: Conference Series, 86.
https://doi.org/10.1088/1742-6596/86/1/012017

Rađenović B, Radmilovic-Radjenovic M. 3D Etching profile evolution simulations: Time dependence analysis of the profile charging during SiO2 etching in plasma. in Journal of Physics: Conference Series. 2007;86.
doi:10.1088/1742-6596/86/1/012017 .

Rađenović, Branislav, Radmilovic-Radjenovic, Marija, "3D Etching profile evolution simulations: Time dependence analysis of the profile charging during SiO2 etching in plasma" in Journal of Physics: Conference Series, 86 (2007),
https://doi.org/10.1088/1742-6596/86/1/012017 . .

TY  - JOUR
AU  - Radmilovic-Radjenovic, Marija
AU  - Rađenović, Branislav
PY  - 2007
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/3196
AB  - This paper contains the results of the detailed simulation study of the role of ion-enhanced field emission on the breakdown voltage in argon, xenon and krypton at high frequencies. Calculations were performed by using a one-dimensional particle-in-cell/Monte Carlo collisions (PIC/MCC) code with the secondary emission model adjusted to include field emission effects in microgaps. The obtained simulation results clearly show that electrical breakdown across micron-size gaps may occur at voltages far below the minimum predicted by the conventional Paschen curve. The observed breakdown voltage reduction may be attributed to the onset of ion-enhanced field emission.
T2  - Plasma Sources Science and Technology
T1  - The influence of ion-enhanced field emission on the high-frequency breakdown in microgaps
VL  - 16
IS  - 2
SP  - 337
EP  - 340
DO  - 10.1088/0963-0252/16/2/017
ER  - 

@article{
author = "Radmilovic-Radjenovic, Marija and Rađenović, Branislav",
year = "2007",
abstract = "This paper contains the results of the detailed simulation study of the role of ion-enhanced field emission on the breakdown voltage in argon, xenon and krypton at high frequencies. Calculations were performed by using a one-dimensional particle-in-cell/Monte Carlo collisions (PIC/MCC) code with the secondary emission model adjusted to include field emission effects in microgaps. The obtained simulation results clearly show that electrical breakdown across micron-size gaps may occur at voltages far below the minimum predicted by the conventional Paschen curve. The observed breakdown voltage reduction may be attributed to the onset of ion-enhanced field emission.",
journal = "Plasma Sources Science and Technology",
title = "The influence of ion-enhanced field emission on the high-frequency breakdown in microgaps",
volume = "16",
number = "2",
pages = "337-340",
doi = "10.1088/0963-0252/16/2/017"
}

Radmilovic-Radjenovic, M.,& Rađenović, B.. (2007). The influence of ion-enhanced field emission on the high-frequency breakdown in microgaps. in Plasma Sources Science and Technology, 16(2), 337-340.
https://doi.org/10.1088/0963-0252/16/2/017

Radmilovic-Radjenovic M, Rađenović B. The influence of ion-enhanced field emission on the high-frequency breakdown in microgaps. in Plasma Sources Science and Technology. 2007;16(2):337-340.
doi:10.1088/0963-0252/16/2/017 .

Radmilovic-Radjenovic, Marija, Rađenović, Branislav, "The influence of ion-enhanced field emission on the high-frequency breakdown in microgaps" in Plasma Sources Science and Technology, 16, no. 2 (2007):337-340,
https://doi.org/10.1088/0963-0252/16/2/017 . .

TY  - JOUR
AU  - Rađenović, Branislav
AU  - Radmilovic-Radjenovic, Marija
AU  - Mitrić, Miodrag
PY  - 2006
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/3121
AB  - It is shown that profile evolution during anisotropic wet etching of silicon can be described by the nonconvex Hamiltonian arising in the Hamilton-Jacobi equation for the level set function. Etching rate function is determined on the basis of the silicon symmetry properties. An extension of the sparse field method for solving three dimensional level set equations in the case of nonconvex Hamiltonians is presented. (c) 2006 American Institute of Physics.
T2  - Applied Physics Letters
T1  - Nonconvex Hamiltonians in three dimensional level set simulations of the wet etching of silicon
VL  - 89
IS  - 21
DO  - 10.1063/1.2388860
ER  - 

@article{
author = "Rađenović, Branislav and Radmilovic-Radjenovic, Marija and Mitrić, Miodrag",
year = "2006",
abstract = "It is shown that profile evolution during anisotropic wet etching of silicon can be described by the nonconvex Hamiltonian arising in the Hamilton-Jacobi equation for the level set function. Etching rate function is determined on the basis of the silicon symmetry properties. An extension of the sparse field method for solving three dimensional level set equations in the case of nonconvex Hamiltonians is presented. (c) 2006 American Institute of Physics.",
journal = "Applied Physics Letters",
title = "Nonconvex Hamiltonians in three dimensional level set simulations of the wet etching of silicon",
volume = "89",
number = "21",
doi = "10.1063/1.2388860"
}

Rađenović, B., Radmilovic-Radjenovic, M.,& Mitrić, M.. (2006). Nonconvex Hamiltonians in three dimensional level set simulations of the wet etching of silicon. in Applied Physics Letters, 89(21).
https://doi.org/10.1063/1.2388860

Rađenović B, Radmilovic-Radjenovic M, Mitrić M. Nonconvex Hamiltonians in three dimensional level set simulations of the wet etching of silicon. in Applied Physics Letters. 2006;89(21).
doi:10.1063/1.2388860 .

Rađenović, Branislav, Radmilovic-Radjenovic, Marija, Mitrić, Miodrag, "Nonconvex Hamiltonians in three dimensional level set simulations of the wet etching of silicon" in Applied Physics Letters, 89, no. 21 (2006),
https://doi.org/10.1063/1.2388860 . .

TY  - JOUR
AU  - Radmilovic-Radjenovic, Marija
AU  - Rađenović, Branislav
PY  - 2006
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/3041
AB  - This paper presents a simple phenomenological model and detailed simulation studies of the breakdown of a gas under the simultaneous action of electric and magnetic fields. In deriving expressions for the breakdown voltage variations of both the ionization coefficient and the secondary electron yield in a magnetic field are taken into account. Calculations were carried out by using the XOOPIC code with the old and the improved secondary emission models adjusted to involve the influence of the magnetic field on the secondary electron production. It was shown that the incorporation of the variation of the secondary electron yield with magnetic field leads to the better agreement with existing experimental results.
T2  - Journal of Physics. D: Applied Physics
T1  - The effect of magnetic field on the electrical breakdown characteristics
VL  - 39
IS  - 14
SP  - 3002
EP  - 3009
DO  - 10.1088/0022-3727/39/14/019
ER  - 

@article{
author = "Radmilovic-Radjenovic, Marija and Rađenović, Branislav",
year = "2006",
abstract = "This paper presents a simple phenomenological model and detailed simulation studies of the breakdown of a gas under the simultaneous action of electric and magnetic fields. In deriving expressions for the breakdown voltage variations of both the ionization coefficient and the secondary electron yield in a magnetic field are taken into account. Calculations were carried out by using the XOOPIC code with the old and the improved secondary emission models adjusted to involve the influence of the magnetic field on the secondary electron production. It was shown that the incorporation of the variation of the secondary electron yield with magnetic field leads to the better agreement with existing experimental results.",
journal = "Journal of Physics. D: Applied Physics",
title = "The effect of magnetic field on the electrical breakdown characteristics",
volume = "39",
number = "14",
pages = "3002-3009",
doi = "10.1088/0022-3727/39/14/019"
}

Radmilovic-Radjenovic, M.,& Rađenović, B.. (2006). The effect of magnetic field on the electrical breakdown characteristics. in Journal of Physics. D: Applied Physics, 39(14), 3002-3009.
https://doi.org/10.1088/0022-3727/39/14/019

Radmilovic-Radjenovic M, Rađenović B. The effect of magnetic field on the electrical breakdown characteristics. in Journal of Physics. D: Applied Physics. 2006;39(14):3002-3009.
doi:10.1088/0022-3727/39/14/019 .

Radmilovic-Radjenovic, Marija, Rađenović, Branislav, "The effect of magnetic field on the electrical breakdown characteristics" in Journal of Physics. D: Applied Physics, 39, no. 14 (2006):3002-3009,
https://doi.org/10.1088/0022-3727/39/14/019 . .