3D Etching profile evolution simulations: Time dependence analysis of the profile charging during SiO2 etching in plasma
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The ability to simulate feature charging was added to the 3D level set profile evolution simulator described earlier. A comprehensive simulation of etching profile evolution requires knowledge of the etching rates at all the points of the profile surface during the etching process. Electrons do not contribute directly to the material removal, but they are the source, together with positive ions, of the profile charging that has many negative consequences on the final outcome of the process especially in the case of insulating material etching. The ion and electron fluxes were computed along the feature using Monte Carlo method. The surface potential profiles and electric field for the entire feature were generated by solving Laplace equation using finite elements method. Calculations were performed in the case of simplified model of Ar+/CF4 non-equilibrium plasma etching of SiO2. The time dependence of the profile charging during SiO2 etching in plasma is presented.
Извор:Journal of Physics: Conference Series, 2007, 86
- TESLA, Ministry of Science and Environmental Protection
- 5th EU-Japan Symposium on Plasma Processing, Mar 07-09, 2007, Belgrade, Serbia
ISSN: 1742-6588 (print)