@article{
author = "Pejović, Milić M. and Pejović, Svetlana M. and Stojanov, Dragan and Ciraj-Bjelac, Olivera",
year = "2014",
abstract = "In this paper, the results of radiation sensitive field effect transistors (Al-gate p-channel metal-oxide-semiconductor field effect transistors) sensitivity to gamma and X-ray irradiation are presented. Radiation fields were created using Co-60 source for three dose ranges (0-1 Gy, 0-5 Gy, and 0-50 Gy), as well as X-ray unit of 280 kVp spectrum for a single dose range from 0 to 5 Gy. The sensitivity was characterized by the threshold voltage shift, determined from reader circuit measurements, as a function of absorbed radiation dose. It was shown that for the three dose ranges of gamma radiation, as well as for the X-ray range from 0 Gy to 5 Gy there is approximately a linear dependence between threshold voltage shift Delta V-T and radiation dose D. The application of positive bias of +5 Vat the RADFET gate during irradiation, for these ranges of gamma radiation, also for X-ray dose range, leads to the increase in Delta V-T and also, approximately a linear dependence between Delta V-T and D, is established. Moreover, it was shown that the sensitivity of RADFET is much higher in the case of X-ray irradiation then in the case of gamma-ray irradiation for the same dose range.",
journal = "Nuclear technology and radiation protection",
title = "Sensitivity of Radfet for Gamma and X-Ray Doses Used in Medicine",
volume = "29",
number = "3",
pages = "179-185",
doi = "10.2298/NTRP1403179P"
}