Sensitivity and fading of pMOS dosemeters irradiated with X-ray radiation doses from 1 to 100 cGy
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2016
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In this paper, the results of pMOS dosemeters sensitivity to X-ray radiation and 28-d fading at room temperature are presented. Two types of dosemeters were used, which differ in gate oxide layer thickness. The sensitivity of pMOS dosemeters with gate oxide layer thickness of 1 A mu m was followed in the dose intervals of 1 to 10 cGy and 10 to 100 cGy, whereas that of 400 nm was in the interval of 10 to 100 cGy. The sensitivity was characterised by the threshold voltage shift, which was determined as a function of absorbed radiation dose and time after irradiation. Linear dependence between threshold voltage shift and absorbed radiation dose was established, as well as that considerable fading occurs during the first few days after irradiation. The mechanisms responsible for threshold voltage shift during irradiation and latter annealing have been also discussed.
Извор:
Radiation Protection Dosimetry, 2016, 168, 1, 33-39Финансирање / пројекти:
- Физички и функционални ефекти интеракције зрачења са електротехничким и биолошким системима (RS-MESTD-Basic Research (BR or ON)-171007)
DOI: 10.1093/rpd/ncv006
ISSN: 0144-8420; 1742-3406
PubMed: 25688061
WoS: 000369326600005
Scopus: 2-s2.0-84961631689
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Институција/група
VinčaTY - JOUR AU - Pejović, Svetlana M. AU - Pejović, Milić M. AU - Stojanov, Dragan AU - Ciraj-Bjelac, Olivera PY - 2016 UR - https://vinar.vin.bg.ac.rs/handle/123456789/917 AB - In this paper, the results of pMOS dosemeters sensitivity to X-ray radiation and 28-d fading at room temperature are presented. Two types of dosemeters were used, which differ in gate oxide layer thickness. The sensitivity of pMOS dosemeters with gate oxide layer thickness of 1 A mu m was followed in the dose intervals of 1 to 10 cGy and 10 to 100 cGy, whereas that of 400 nm was in the interval of 10 to 100 cGy. The sensitivity was characterised by the threshold voltage shift, which was determined as a function of absorbed radiation dose and time after irradiation. Linear dependence between threshold voltage shift and absorbed radiation dose was established, as well as that considerable fading occurs during the first few days after irradiation. The mechanisms responsible for threshold voltage shift during irradiation and latter annealing have been also discussed. T2 - Radiation Protection Dosimetry T1 - Sensitivity and fading of pMOS dosemeters irradiated with X-ray radiation doses from 1 to 100 cGy VL - 168 IS - 1 SP - 33 EP - 39 DO - 10.1093/rpd/ncv006 ER -
@article{ author = "Pejović, Svetlana M. and Pejović, Milić M. and Stojanov, Dragan and Ciraj-Bjelac, Olivera", year = "2016", abstract = "In this paper, the results of pMOS dosemeters sensitivity to X-ray radiation and 28-d fading at room temperature are presented. Two types of dosemeters were used, which differ in gate oxide layer thickness. The sensitivity of pMOS dosemeters with gate oxide layer thickness of 1 A mu m was followed in the dose intervals of 1 to 10 cGy and 10 to 100 cGy, whereas that of 400 nm was in the interval of 10 to 100 cGy. The sensitivity was characterised by the threshold voltage shift, which was determined as a function of absorbed radiation dose and time after irradiation. Linear dependence between threshold voltage shift and absorbed radiation dose was established, as well as that considerable fading occurs during the first few days after irradiation. The mechanisms responsible for threshold voltage shift during irradiation and latter annealing have been also discussed.", journal = "Radiation Protection Dosimetry", title = "Sensitivity and fading of pMOS dosemeters irradiated with X-ray radiation doses from 1 to 100 cGy", volume = "168", number = "1", pages = "33-39", doi = "10.1093/rpd/ncv006" }
Pejović, S. M., Pejović, M. M., Stojanov, D.,& Ciraj-Bjelac, O.. (2016). Sensitivity and fading of pMOS dosemeters irradiated with X-ray radiation doses from 1 to 100 cGy. in Radiation Protection Dosimetry, 168(1), 33-39. https://doi.org/10.1093/rpd/ncv006
Pejović SM, Pejović MM, Stojanov D, Ciraj-Bjelac O. Sensitivity and fading of pMOS dosemeters irradiated with X-ray radiation doses from 1 to 100 cGy. in Radiation Protection Dosimetry. 2016;168(1):33-39. doi:10.1093/rpd/ncv006 .
Pejović, Svetlana M., Pejović, Milić M., Stojanov, Dragan, Ciraj-Bjelac, Olivera, "Sensitivity and fading of pMOS dosemeters irradiated with X-ray radiation doses from 1 to 100 cGy" in Radiation Protection Dosimetry, 168, no. 1 (2016):33-39, https://doi.org/10.1093/rpd/ncv006 . .