Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation
Апстракт
Investigation of Al-gate p-channel MOSFETs sensitivity following irradiation using 200 and 280 kV X-ray beams as well as gamma-ray irradiation of Co-60 in the dose range from 1 to 5 Gy was performed in this paper. The response followed on the basis of threshold voltage shift and was studied as a function of absorbed dose. It was shown that the most significant change in threshold voltage was in the case of MOSFET irradiation in X-ray fields of 200 kV and when the gate voltage was +5V. For practical applications in dosimetry, the sensitivity of the investigated MOSFETs was also satisfactory for X-ray tube voltage of 280 kV and for gamma rays. Possible processes in gate oxide caused by radiation and its impact on the response of MOSFETs were also analyzed in this paper.
Извор:
International Journal of Photoenergy, 2013Финансирање / пројекти:
- Романизација, урбанизација и трансформација урбаних центара цивилног војног и резиденцијалног карактера у римским провинцијама на тлу Србије (RS-MESTD-Basic Research (BR or ON)-177007)
Напомена:
- Link to erratum: https://vinar.vin.bg.ac.rs/handle/123456789/9743
Повезане информације:
- Повезани садржај
https://vinar.vin.bg.ac.rs/handle/123456789/9743
DOI: 10.1155/2013/158403
ISSN: 1110-662X
WoS: 000322343300001
Scopus: 2-s2.0-84880903878
Колекције
Институција/група
VinčaTY - JOUR AU - Pejović, Milić M. AU - Ciraj-Bjelac, Olivera AU - Kovačević, Milojko AU - Rajović, Zoran AU - Ilić, Gvozden PY - 2013 UR - https://vinar.vin.bg.ac.rs/handle/123456789/5602 AB - Investigation of Al-gate p-channel MOSFETs sensitivity following irradiation using 200 and 280 kV X-ray beams as well as gamma-ray irradiation of Co-60 in the dose range from 1 to 5 Gy was performed in this paper. The response followed on the basis of threshold voltage shift and was studied as a function of absorbed dose. It was shown that the most significant change in threshold voltage was in the case of MOSFET irradiation in X-ray fields of 200 kV and when the gate voltage was +5V. For practical applications in dosimetry, the sensitivity of the investigated MOSFETs was also satisfactory for X-ray tube voltage of 280 kV and for gamma rays. Possible processes in gate oxide caused by radiation and its impact on the response of MOSFETs were also analyzed in this paper. T2 - International Journal of Photoenergy T1 - Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation DO - 10.1155/2013/158403 ER -
@article{ author = "Pejović, Milić M. and Ciraj-Bjelac, Olivera and Kovačević, Milojko and Rajović, Zoran and Ilić, Gvozden", year = "2013", abstract = "Investigation of Al-gate p-channel MOSFETs sensitivity following irradiation using 200 and 280 kV X-ray beams as well as gamma-ray irradiation of Co-60 in the dose range from 1 to 5 Gy was performed in this paper. The response followed on the basis of threshold voltage shift and was studied as a function of absorbed dose. It was shown that the most significant change in threshold voltage was in the case of MOSFET irradiation in X-ray fields of 200 kV and when the gate voltage was +5V. For practical applications in dosimetry, the sensitivity of the investigated MOSFETs was also satisfactory for X-ray tube voltage of 280 kV and for gamma rays. Possible processes in gate oxide caused by radiation and its impact on the response of MOSFETs were also analyzed in this paper.", journal = "International Journal of Photoenergy", title = "Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation", doi = "10.1155/2013/158403" }
Pejović, M. M., Ciraj-Bjelac, O., Kovačević, M., Rajović, Z.,& Ilić, G.. (2013). Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation. in International Journal of Photoenergy. https://doi.org/10.1155/2013/158403
Pejović MM, Ciraj-Bjelac O, Kovačević M, Rajović Z, Ilić G. Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation. in International Journal of Photoenergy. 2013;. doi:10.1155/2013/158403 .
Pejović, Milić M., Ciraj-Bjelac, Olivera, Kovačević, Milojko, Rajović, Zoran, Ilić, Gvozden, "Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation" in International Journal of Photoenergy (2013), https://doi.org/10.1155/2013/158403 . .