TY  - JOUR
AU  - Pejović, Svetlana M.
AU  - Pejović, Milić M.
AU  - Živanović, Miloš Z.
PY  - 2019
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/8371
AB  - In order to track “small dose effect” leading to stabilization of RADFETs with 1 μm thick oxide fabricated at Tyndall National Institute, Cork, Ireland irradiation was performed with gamma-rays in the radiation dose interval from 1 to 5 cGy, followed with room temperature annealing for the time of 28 days. Gate bias during irradiation was 0, 2.5 and 5 V. Threshold voltage shift ΔVT determined from transfer characteristics in saturation were followed during irradiation and annealing. It was shown that there is significant increase in ΔVT for 1 cGy radiation dose and those are 36.3, 43.3 mV and 45.7 mV for gate bias 0, 2.5 V and 5 V, respectively. For higher radiation doses ΔVT also increases, however, such increase is much lower. RADFETs fading at room temperature lead to permanent decrease in ΔVT and after 28 days the threshold voltage for devices is returned to virgin device value. Small dose effect is confirmed and radiation dose of at least 5 cGy is necessary for RADFET stabilization before their use in dosimetric application. After RADFETs stabilization they were irradiated in dose interval from 10 to 50 cGy with gate bias of 0, 2.5 and 5 V. It was shown that there is a linear dependence between ΔVT and absorbed radiation dose D, for gate bias during irradiation 0, 2.5 and 5 V. Defects responsible for threshold voltage shift, formed during irradiation as well as their neutralization/compensation during annealing, are also discussed. © 2019
T2  - Applied Radiation and Isotopes
T1  - Small dose effect in RADFET with thick gate oxide
VL  - 152
SP  - 72
EP  - 77
DO  - 10.1016/j.apradiso.2019.06.034
ER  - 

@article{
author = "Pejović, Svetlana M. and Pejović, Milić M. and Živanović, Miloš Z.",
year = "2019",
abstract = "In order to track “small dose effect” leading to stabilization of RADFETs with 1 μm thick oxide fabricated at Tyndall National Institute, Cork, Ireland irradiation was performed with gamma-rays in the radiation dose interval from 1 to 5 cGy, followed with room temperature annealing for the time of 28 days. Gate bias during irradiation was 0, 2.5 and 5 V. Threshold voltage shift ΔVT determined from transfer characteristics in saturation were followed during irradiation and annealing. It was shown that there is significant increase in ΔVT for 1 cGy radiation dose and those are 36.3, 43.3 mV and 45.7 mV for gate bias 0, 2.5 V and 5 V, respectively. For higher radiation doses ΔVT also increases, however, such increase is much lower. RADFETs fading at room temperature lead to permanent decrease in ΔVT and after 28 days the threshold voltage for devices is returned to virgin device value. Small dose effect is confirmed and radiation dose of at least 5 cGy is necessary for RADFET stabilization before their use in dosimetric application. After RADFETs stabilization they were irradiated in dose interval from 10 to 50 cGy with gate bias of 0, 2.5 and 5 V. It was shown that there is a linear dependence between ΔVT and absorbed radiation dose D, for gate bias during irradiation 0, 2.5 and 5 V. Defects responsible for threshold voltage shift, formed during irradiation as well as their neutralization/compensation during annealing, are also discussed. © 2019",
journal = "Applied Radiation and Isotopes",
title = "Small dose effect in RADFET with thick gate oxide",
volume = "152",
pages = "72-77",
doi = "10.1016/j.apradiso.2019.06.034"
}

Pejović, S. M., Pejović, M. M.,& Živanović, M. Z.. (2019). Small dose effect in RADFET with thick gate oxide. in Applied Radiation and Isotopes, 152, 72-77.
https://doi.org/10.1016/j.apradiso.2019.06.034

Pejović SM, Pejović MM, Živanović MZ. Small dose effect in RADFET with thick gate oxide. in Applied Radiation and Isotopes. 2019;152:72-77.
doi:10.1016/j.apradiso.2019.06.034 .

Pejović, Svetlana M., Pejović, Milić M., Živanović, Miloš Z., "Small dose effect in RADFET with thick gate oxide" in Applied Radiation and Isotopes, 152 (2019):72-77,
https://doi.org/10.1016/j.apradiso.2019.06.034 . .

TY  - JOUR
AU  - Obrenović, Marija D.
AU  - Pejović, Milić M.
AU  - Lazarević, Đorđe R.
AU  - Kartalović, Nenad M.
PY  - 2018
UR  - http://www.doiserbia.nb.rs/Article.aspx?ID=1451-39941801081O
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/7784
AB  - The variations in the threshold voltage shift in p-channel power VDMOSFET during the gamma ray irradiation was investigated in the dose range from 10 to 100 Gy. The investigations were performed without the gate bias and with 5 V gate bias. The devices with 5 V gate bias exhibit a linear dependence between the threshold voltage shift and the radiation dose. The densities of radiation-induced fixed and switching traps were determined from the sub-threshold I-V characteristics using the midgap technique. It was shown that the creation of fixed traps is dominant during the irradiation. The possible mechanisms responsible for the fixed and switching traps creation are also analyzed in this paper.
T2  - Nuclear Technology and Radiation Protection
T1  - The effects induced by the gamma-ray responsible for the threshold voltage shift of commercial p-channel power VDMOSFET
VL  - 33
IS  - 1
SP  - 81
EP  - 86
DO  - 10.2298/NTRP1801081O
ER  - 

@article{
author = "Obrenović, Marija D. and Pejović, Milić M. and Lazarević, Đorđe R. and Kartalović, Nenad M.",
year = "2018",
abstract = "The variations in the threshold voltage shift in p-channel power VDMOSFET during the gamma ray irradiation was investigated in the dose range from 10 to 100 Gy. The investigations were performed without the gate bias and with 5 V gate bias. The devices with 5 V gate bias exhibit a linear dependence between the threshold voltage shift and the radiation dose. The densities of radiation-induced fixed and switching traps were determined from the sub-threshold I-V characteristics using the midgap technique. It was shown that the creation of fixed traps is dominant during the irradiation. The possible mechanisms responsible for the fixed and switching traps creation are also analyzed in this paper.",
journal = "Nuclear Technology and Radiation Protection",
title = "The effects induced by the gamma-ray responsible for the threshold voltage shift of commercial p-channel power VDMOSFET",
volume = "33",
number = "1",
pages = "81-86",
doi = "10.2298/NTRP1801081O"
}

Obrenović, M. D., Pejović, M. M., Lazarević, Đ. R.,& Kartalović, N. M.. (2018). The effects induced by the gamma-ray responsible for the threshold voltage shift of commercial p-channel power VDMOSFET. in Nuclear Technology and Radiation Protection, 33(1), 81-86.
https://doi.org/10.2298/NTRP1801081O

Obrenović MD, Pejović MM, Lazarević ĐR, Kartalović NM. The effects induced by the gamma-ray responsible for the threshold voltage shift of commercial p-channel power VDMOSFET. in Nuclear Technology and Radiation Protection. 2018;33(1):81-86.
doi:10.2298/NTRP1801081O .

Obrenović, Marija D., Pejović, Milić M., Lazarević, Đorđe R., Kartalović, Nenad M., "The effects induced by the gamma-ray responsible for the threshold voltage shift of commercial p-channel power VDMOSFET" in Nuclear Technology and Radiation Protection, 33, no. 1 (2018):81-86,
https://doi.org/10.2298/NTRP1801081O . .

TY  - JOUR
AU  - Milosavljevic, Srdjan
AU  - Lazarević, Đorđe R.
AU  - Stanković, Koviljka
AU  - Pejović, Milić M.
AU  - Vujisić, Miloš Lj.
PY  - 2017
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/1850
T2  - International Journal of Photoenergy
T1  - Corrigendum to: Effects of ion beam irradiation on nanoscale InOx cooper-pair insulators (International Journal of Photoenergy (2013) 2013 (236823) DOI: 10.1155/2013/236823)
DO  - 10.1155/2017/3029101
ER  - 

@article{
author = "Milosavljevic, Srdjan and Lazarević, Đorđe R. and Stanković, Koviljka and Pejović, Milić M. and Vujisić, Miloš Lj.",
year = "2017",
journal = "International Journal of Photoenergy",
title = "Corrigendum to: Effects of ion beam irradiation on nanoscale InOx cooper-pair insulators (International Journal of Photoenergy (2013) 2013 (236823) DOI: 10.1155/2013/236823)",
doi = "10.1155/2017/3029101"
}

Milosavljevic, S., Lazarević, Đ. R., Stanković, K., Pejović, M. M.,& Vujisić, M. Lj.. (2017). Corrigendum to: Effects of ion beam irradiation on nanoscale InOx cooper-pair insulators (International Journal of Photoenergy (2013) 2013 (236823) DOI: 10.1155/2013/236823). in International Journal of Photoenergy.
https://doi.org/10.1155/2017/3029101

Milosavljevic S, Lazarević ĐR, Stanković K, Pejović MM, Vujisić ML. Corrigendum to: Effects of ion beam irradiation on nanoscale InOx cooper-pair insulators (International Journal of Photoenergy (2013) 2013 (236823) DOI: 10.1155/2013/236823). in International Journal of Photoenergy. 2017;.
doi:10.1155/2017/3029101 .

Milosavljevic, Srdjan, Lazarević, Đorđe R., Stanković, Koviljka, Pejović, Milić M., Vujisić, Miloš Lj., "Corrigendum to: Effects of ion beam irradiation on nanoscale InOx cooper-pair insulators (International Journal of Photoenergy (2013) 2013 (236823) DOI: 10.1155/2013/236823)" in International Journal of Photoenergy (2017),
https://doi.org/10.1155/2017/3029101 . .

TY  - JOUR
AU  - Pejović, Svetlana M.
AU  - Pejović, Milić M.
AU  - Stojanov, Dragan
AU  - Ciraj-Bjelac, Olivera
PY  - 2016
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/917
AB  - In this paper, the results of pMOS dosemeters sensitivity to X-ray radiation and 28-d fading at room temperature are presented. Two types of dosemeters were used, which differ in gate oxide layer thickness. The sensitivity of pMOS dosemeters with gate oxide layer thickness of 1 A mu m was followed in the dose intervals of 1 to 10 cGy and 10 to 100 cGy, whereas that of 400 nm was in the interval of 10 to 100 cGy. The sensitivity was characterised by the threshold voltage shift, which was determined as a function of absorbed radiation dose and time after irradiation. Linear dependence between threshold voltage shift and absorbed radiation dose was established, as well as that considerable fading occurs during the first few days after irradiation. The mechanisms responsible for threshold voltage shift during irradiation and latter annealing have been also discussed.
T2  - Radiation Protection Dosimetry
T1  - Sensitivity and fading of pMOS dosemeters irradiated with X-ray radiation doses from 1 to 100 cGy
VL  - 168
IS  - 1
SP  - 33
EP  - 39
DO  - 10.1093/rpd/ncv006
ER  - 

@article{
author = "Pejović, Svetlana M. and Pejović, Milić M. and Stojanov, Dragan and Ciraj-Bjelac, Olivera",
year = "2016",
abstract = "In this paper, the results of pMOS dosemeters sensitivity to X-ray radiation and 28-d fading at room temperature are presented. Two types of dosemeters were used, which differ in gate oxide layer thickness. The sensitivity of pMOS dosemeters with gate oxide layer thickness of 1 A mu m was followed in the dose intervals of 1 to 10 cGy and 10 to 100 cGy, whereas that of 400 nm was in the interval of 10 to 100 cGy. The sensitivity was characterised by the threshold voltage shift, which was determined as a function of absorbed radiation dose and time after irradiation. Linear dependence between threshold voltage shift and absorbed radiation dose was established, as well as that considerable fading occurs during the first few days after irradiation. The mechanisms responsible for threshold voltage shift during irradiation and latter annealing have been also discussed.",
journal = "Radiation Protection Dosimetry",
title = "Sensitivity and fading of pMOS dosemeters irradiated with X-ray radiation doses from 1 to 100 cGy",
volume = "168",
number = "1",
pages = "33-39",
doi = "10.1093/rpd/ncv006"
}

Pejović, S. M., Pejović, M. M., Stojanov, D.,& Ciraj-Bjelac, O.. (2016). Sensitivity and fading of pMOS dosemeters irradiated with X-ray radiation doses from 1 to 100 cGy. in Radiation Protection Dosimetry, 168(1), 33-39.
https://doi.org/10.1093/rpd/ncv006

Pejović SM, Pejović MM, Stojanov D, Ciraj-Bjelac O. Sensitivity and fading of pMOS dosemeters irradiated with X-ray radiation doses from 1 to 100 cGy. in Radiation Protection Dosimetry. 2016;168(1):33-39.
doi:10.1093/rpd/ncv006 .

Pejović, Svetlana M., Pejović, Milić M., Stojanov, Dragan, Ciraj-Bjelac, Olivera, "Sensitivity and fading of pMOS dosemeters irradiated with X-ray radiation doses from 1 to 100 cGy" in Radiation Protection Dosimetry, 168, no. 1 (2016):33-39,
https://doi.org/10.1093/rpd/ncv006 . .

TY  - JOUR
AU  - Pejović, Milić M.
AU  - Pejović, Svetlana M.
AU  - Stojanov, Dragan
AU  - Ciraj-Bjelac, Olivera
PY  - 2014
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/252
AB  - In this paper, the results of radiation sensitive field effect transistors (Al-gate p-channel metal-oxide-semiconductor field effect transistors) sensitivity to gamma and X-ray irradiation are presented. Radiation fields were created using Co-60 source for three dose ranges (0-1 Gy, 0-5 Gy, and 0-50 Gy), as well as X-ray unit of 280 kVp spectrum for a single dose range from 0 to 5 Gy. The sensitivity was characterized by the threshold voltage shift, determined from reader circuit measurements, as a function of absorbed radiation dose. It was shown that for the three dose ranges of gamma radiation, as well as for the X-ray range from 0 Gy to 5 Gy there is approximately a linear dependence between threshold voltage shift Delta V-T and radiation dose D. The application of positive bias of +5 Vat the RADFET gate during irradiation, for these ranges of gamma radiation, also for X-ray dose range, leads to the increase in Delta V-T and also, approximately a linear dependence between Delta V-T and D, is established. Moreover, it was shown that the sensitivity of RADFET is much higher in the case of X-ray irradiation then in the case of gamma-ray irradiation for the same dose range.
T2  - Nuclear technology and radiation protection
T1  - Sensitivity of Radfet for Gamma and X-Ray Doses Used in Medicine
VL  - 29
IS  - 3
SP  - 179
EP  - 185
DO  - 10.2298/NTRP1403179P
ER  - 

@article{
author = "Pejović, Milić M. and Pejović, Svetlana M. and Stojanov, Dragan and Ciraj-Bjelac, Olivera",
year = "2014",
abstract = "In this paper, the results of radiation sensitive field effect transistors (Al-gate p-channel metal-oxide-semiconductor field effect transistors) sensitivity to gamma and X-ray irradiation are presented. Radiation fields were created using Co-60 source for three dose ranges (0-1 Gy, 0-5 Gy, and 0-50 Gy), as well as X-ray unit of 280 kVp spectrum for a single dose range from 0 to 5 Gy. The sensitivity was characterized by the threshold voltage shift, determined from reader circuit measurements, as a function of absorbed radiation dose. It was shown that for the three dose ranges of gamma radiation, as well as for the X-ray range from 0 Gy to 5 Gy there is approximately a linear dependence between threshold voltage shift Delta V-T and radiation dose D. The application of positive bias of +5 Vat the RADFET gate during irradiation, for these ranges of gamma radiation, also for X-ray dose range, leads to the increase in Delta V-T and also, approximately a linear dependence between Delta V-T and D, is established. Moreover, it was shown that the sensitivity of RADFET is much higher in the case of X-ray irradiation then in the case of gamma-ray irradiation for the same dose range.",
journal = "Nuclear technology and radiation protection",
title = "Sensitivity of Radfet for Gamma and X-Ray Doses Used in Medicine",
volume = "29",
number = "3",
pages = "179-185",
doi = "10.2298/NTRP1403179P"
}

Pejović, M. M., Pejović, S. M., Stojanov, D.,& Ciraj-Bjelac, O.. (2014). Sensitivity of Radfet for Gamma and X-Ray Doses Used in Medicine. in Nuclear technology and radiation protection, 29(3), 179-185.
https://doi.org/10.2298/NTRP1403179P

Pejović MM, Pejović SM, Stojanov D, Ciraj-Bjelac O. Sensitivity of Radfet for Gamma and X-Ray Doses Used in Medicine. in Nuclear technology and radiation protection. 2014;29(3):179-185.
doi:10.2298/NTRP1403179P .

Pejović, Milić M., Pejović, Svetlana M., Stojanov, Dragan, Ciraj-Bjelac, Olivera, "Sensitivity of Radfet for Gamma and X-Ray Doses Used in Medicine" in Nuclear technology and radiation protection, 29, no. 3 (2014):179-185,
https://doi.org/10.2298/NTRP1403179P . .

TY  - JOUR
AU  - Pejović, Milić M.
AU  - Ciraj-Bjelac, Olivera
AU  - Kovačević, Milojko
AU  - Rajović, Zoran
AU  - Ilić, Gvozden
PY  - 2013
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/9743
AB  - In the article titled “Sensitivity of P-Channel MOSFET to
X- and Gamma-Ray Irradiation”  there was an error in
the drawing of Figure 2
T2  - International Journal of Photoenergy
T1  - Erratum: Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation (Vol. 33, pg. 1-23, 2013)
DO  - 10.1155/2020/4258307
ER  - 

@article{
author = "Pejović, Milić M. and Ciraj-Bjelac, Olivera and Kovačević, Milojko and Rajović, Zoran and Ilić, Gvozden",
year = "2013",
abstract = "In the article titled “Sensitivity of P-Channel MOSFET to
X- and Gamma-Ray Irradiation”  there was an error in
the drawing of Figure 2",
journal = "International Journal of Photoenergy",
title = "Erratum: Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation (Vol. 33, pg. 1-23, 2013)",
doi = "10.1155/2020/4258307"
}

Pejović, M. M., Ciraj-Bjelac, O., Kovačević, M., Rajović, Z.,& Ilić, G.. (2013). Erratum: Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation (Vol. 33, pg. 1-23, 2013). in International Journal of Photoenergy.
https://doi.org/10.1155/2020/4258307

Pejović MM, Ciraj-Bjelac O, Kovačević M, Rajović Z, Ilić G. Erratum: Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation (Vol. 33, pg. 1-23, 2013). in International Journal of Photoenergy. 2013;.
doi:10.1155/2020/4258307 .

Pejović, Milić M., Ciraj-Bjelac, Olivera, Kovačević, Milojko, Rajović, Zoran, Ilić, Gvozden, "Erratum: Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation (Vol. 33, pg. 1-23, 2013)" in International Journal of Photoenergy (2013),
https://doi.org/10.1155/2020/4258307 . .

TY  - JOUR
AU  - Milosavljevic, Srdjan
AU  - Lazarević, Đorđe R.
AU  - Stanković, Koviljka
AU  - Pejović, Milić M.
AU  - Vujisić, Miloš Lj.
PY  - 2013
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5660
AB  - This paper examines the effects of irradiating indium oxide films of nanoscale thickness by ion beams, when these films are in the Cooper-pair insulator state. Radiation effects are predicted on the basis of Monte Carlo simulations of ion transport. Results of numerical experiments are interpreted within the theoretical model of a Cooper-pair insulator. The study suggests that radiation-induced changes in InOx films exposed to ion beams could significantly alter their current-voltage characteristics and that a transition to a metallic state is possible, due to radiation-induced perturbation of the fine-tuned granular structure. Furthermore, incident and displaced ions can break up enough Cooper pairs in InOx films to cause dissolution of this specific insulating state.
T2  - International Journal of Photoenergy
T1  - Effects of Ion Beam Irradiation on Nanoscale InOx Cooper-Pair Insulators
DO  - 10.1155/2013/236823
ER  - 

@article{
author = "Milosavljevic, Srdjan and Lazarević, Đorđe R. and Stanković, Koviljka and Pejović, Milić M. and Vujisić, Miloš Lj.",
year = "2013",
abstract = "This paper examines the effects of irradiating indium oxide films of nanoscale thickness by ion beams, when these films are in the Cooper-pair insulator state. Radiation effects are predicted on the basis of Monte Carlo simulations of ion transport. Results of numerical experiments are interpreted within the theoretical model of a Cooper-pair insulator. The study suggests that radiation-induced changes in InOx films exposed to ion beams could significantly alter their current-voltage characteristics and that a transition to a metallic state is possible, due to radiation-induced perturbation of the fine-tuned granular structure. Furthermore, incident and displaced ions can break up enough Cooper pairs in InOx films to cause dissolution of this specific insulating state.",
journal = "International Journal of Photoenergy",
title = "Effects of Ion Beam Irradiation on Nanoscale InOx Cooper-Pair Insulators",
doi = "10.1155/2013/236823"
}

Milosavljevic, S., Lazarević, Đ. R., Stanković, K., Pejović, M. M.,& Vujisić, M. Lj.. (2013). Effects of Ion Beam Irradiation on Nanoscale InOx Cooper-Pair Insulators. in International Journal of Photoenergy.
https://doi.org/10.1155/2013/236823

Milosavljevic S, Lazarević ĐR, Stanković K, Pejović MM, Vujisić ML. Effects of Ion Beam Irradiation on Nanoscale InOx Cooper-Pair Insulators. in International Journal of Photoenergy. 2013;.
doi:10.1155/2013/236823 .

Milosavljevic, Srdjan, Lazarević, Đorđe R., Stanković, Koviljka, Pejović, Milić M., Vujisić, Miloš Lj., "Effects of Ion Beam Irradiation on Nanoscale InOx Cooper-Pair Insulators" in International Journal of Photoenergy (2013),
https://doi.org/10.1155/2013/236823 . .

TY  - JOUR
AU  - Pejović, Milić M.
AU  - Ciraj-Bjelac, Olivera
AU  - Kovačević, Milojko
AU  - Rajović, Zoran
AU  - Ilić, Gvozden
PY  - 2013
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5602
AB  - Investigation of Al-gate p-channel MOSFETs sensitivity following irradiation using 200 and 280 kV X-ray beams as well as gamma-ray irradiation of Co-60 in the dose range from 1 to 5 Gy was performed in this paper. The response followed on the basis of threshold voltage shift and was studied as a function of absorbed dose. It was shown that the most significant change in threshold voltage was in the case of MOSFET irradiation in X-ray fields of 200 kV and when the gate voltage was +5V. For practical applications in dosimetry, the sensitivity of the investigated MOSFETs was also satisfactory for X-ray tube voltage of 280 kV and for gamma rays. Possible processes in gate oxide caused by radiation and its impact on the response of MOSFETs were also analyzed in this paper.
T2  - International Journal of Photoenergy
T1  - Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation
DO  - 10.1155/2013/158403
ER  - 

@article{
author = "Pejović, Milić M. and Ciraj-Bjelac, Olivera and Kovačević, Milojko and Rajović, Zoran and Ilić, Gvozden",
year = "2013",
abstract = "Investigation of Al-gate p-channel MOSFETs sensitivity following irradiation using 200 and 280 kV X-ray beams as well as gamma-ray irradiation of Co-60 in the dose range from 1 to 5 Gy was performed in this paper. The response followed on the basis of threshold voltage shift and was studied as a function of absorbed dose. It was shown that the most significant change in threshold voltage was in the case of MOSFET irradiation in X-ray fields of 200 kV and when the gate voltage was +5V. For practical applications in dosimetry, the sensitivity of the investigated MOSFETs was also satisfactory for X-ray tube voltage of 280 kV and for gamma rays. Possible processes in gate oxide caused by radiation and its impact on the response of MOSFETs were also analyzed in this paper.",
journal = "International Journal of Photoenergy",
title = "Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation",
doi = "10.1155/2013/158403"
}

Pejović, M. M., Ciraj-Bjelac, O., Kovačević, M., Rajović, Z.,& Ilić, G.. (2013). Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation. in International Journal of Photoenergy.
https://doi.org/10.1155/2013/158403

Pejović MM, Ciraj-Bjelac O, Kovačević M, Rajović Z, Ilić G. Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation. in International Journal of Photoenergy. 2013;.
doi:10.1155/2013/158403 .

Pejović, Milić M., Ciraj-Bjelac, Olivera, Kovačević, Milojko, Rajović, Zoran, Ilić, Gvozden, "Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation" in International Journal of Photoenergy (2013),
https://doi.org/10.1155/2013/158403 . .