TY  - JOUR
AU  - Dhar, S
AU  - Schaaf, P
AU  - Lieb, KP
AU  - Bibić, Nataša M.
AU  - Milosavljević, Momir
AU  - Sajavaara, T
AU  - Keinonen, J
AU  - Traverse, A
PY  - 2003
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6364
AB  - Thin Fe and Ta layers of 30-45 nm thickness, deposited via magnetron sputtering on Si (100) substrates, were bombarded at room temperature with 100 kev Ar1+ or Ar8+ or with 250 keV Xe1+ or Xe19+ ions in order to test the influence of the ion charge state on the surface sputtering and interface mixing. The samples were characterized by means of Rutherford backscattering at 0.9-3.0 MeV alpha-particle energy, time-of-flight elastic recoil detection analysis with a 53 MeV 127I(10+) beam and atomic force microscopy, No influence of the charge state on the sputtering and athermal mixing rate was observed in the case of the Ta/Si system. However, in the case of the Fe/Si system, the ion charge was observed to have an influence on the mixing rate. (C) 2003 Elsevier Science B.V. All rights reserved.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Ion beam mixing in Fe/Si and Ta/Si bilayers: Possible effects of ion charges
VL  - 205
SP  - 741
EP  - 745
DO  - 10.1016/S0168-583X(03)00578-0
ER  - 

@article{
author = "Dhar, S and Schaaf, P and Lieb, KP and Bibić, Nataša M. and Milosavljević, Momir and Sajavaara, T and Keinonen, J and Traverse, A",
year = "2003",
abstract = "Thin Fe and Ta layers of 30-45 nm thickness, deposited via magnetron sputtering on Si (100) substrates, were bombarded at room temperature with 100 kev Ar1+ or Ar8+ or with 250 keV Xe1+ or Xe19+ ions in order to test the influence of the ion charge state on the surface sputtering and interface mixing. The samples were characterized by means of Rutherford backscattering at 0.9-3.0 MeV alpha-particle energy, time-of-flight elastic recoil detection analysis with a 53 MeV 127I(10+) beam and atomic force microscopy, No influence of the charge state on the sputtering and athermal mixing rate was observed in the case of the Ta/Si system. However, in the case of the Fe/Si system, the ion charge was observed to have an influence on the mixing rate. (C) 2003 Elsevier Science B.V. All rights reserved.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Ion beam mixing in Fe/Si and Ta/Si bilayers: Possible effects of ion charges",
volume = "205",
pages = "741-745",
doi = "10.1016/S0168-583X(03)00578-0"
}

Dhar, S., Schaaf, P., Lieb, K., Bibić, N. M., Milosavljević, M., Sajavaara, T., Keinonen, J.,& Traverse, A.. (2003). Ion beam mixing in Fe/Si and Ta/Si bilayers: Possible effects of ion charges. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 205, 741-745.
https://doi.org/10.1016/S0168-583X(03)00578-0

Dhar S, Schaaf P, Lieb K, Bibić NM, Milosavljević M, Sajavaara T, Keinonen J, Traverse A. Ion beam mixing in Fe/Si and Ta/Si bilayers: Possible effects of ion charges. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2003;205:741-745.
doi:10.1016/S0168-583X(03)00578-0 .

Dhar, S, Schaaf, P, Lieb, KP, Bibić, Nataša M., Milosavljević, Momir, Sajavaara, T, Keinonen, J, Traverse, A, "Ion beam mixing in Fe/Si and Ta/Si bilayers: Possible effects of ion charges" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 205 (2003):741-745,
https://doi.org/10.1016/S0168-583X(03)00578-0 . .