TY  - JOUR
AU  - Milinović, Velimir
AU  - Bibić, Nataša M.
AU  - Dhar, S
AU  - Šiljegović, Milorad
AU  - Schaaf, P
AU  - Lieb, KP
PY  - 2004
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/2813
AB  - In the course of a systematic investigation of heavy ion-irradiated Fe/Si layers, we have studied atomic transport and phase formation induced by 22-keV N-14(2+) ion implantation in Fe-57(30 nm)/Si bilayers at high fluences. We report here results obtained by Rutherford backscattering spectroscopy, X-ray diffraction, and conversion electron Mossbauer spectroscopy after implantation and post-implantation annealing treatments. The irradiations caused little sputtering, but significant interface mixing. During implantation, iron nitrides, but no silicides were formed, even at the highest nitrogen fluence of 2x10(17) ions/cm(2). When heating these samples in vacuo up to 700degreesC, the iron-rich phases Eepsilon-Fe3N and gamma-Fe4N were produced. Starting at 600degreesC the silicide phase beta-FeSi2 was also identified.
T2  - Applied Physics. A: Materials Science and Processing
T1  - Nitrogen irradiation of Fe/Si bilayers: nitride versus silicide phase formation
VL  - 79
IS  - 8
SP  - 2093
EP  - 2097
DO  - 10.1007/s00339-004-2889-2
ER  - 

@article{
author = "Milinović, Velimir and Bibić, Nataša M. and Dhar, S and Šiljegović, Milorad and Schaaf, P and Lieb, KP",
year = "2004",
abstract = "In the course of a systematic investigation of heavy ion-irradiated Fe/Si layers, we have studied atomic transport and phase formation induced by 22-keV N-14(2+) ion implantation in Fe-57(30 nm)/Si bilayers at high fluences. We report here results obtained by Rutherford backscattering spectroscopy, X-ray diffraction, and conversion electron Mossbauer spectroscopy after implantation and post-implantation annealing treatments. The irradiations caused little sputtering, but significant interface mixing. During implantation, iron nitrides, but no silicides were formed, even at the highest nitrogen fluence of 2x10(17) ions/cm(2). When heating these samples in vacuo up to 700degreesC, the iron-rich phases Eepsilon-Fe3N and gamma-Fe4N were produced. Starting at 600degreesC the silicide phase beta-FeSi2 was also identified.",
journal = "Applied Physics. A: Materials Science and Processing",
title = "Nitrogen irradiation of Fe/Si bilayers: nitride versus silicide phase formation",
volume = "79",
number = "8",
pages = "2093-2097",
doi = "10.1007/s00339-004-2889-2"
}

Milinović, V., Bibić, N. M., Dhar, S., Šiljegović, M., Schaaf, P.,& Lieb, K.. (2004). Nitrogen irradiation of Fe/Si bilayers: nitride versus silicide phase formation. in Applied Physics. A: Materials Science and Processing, 79(8), 2093-2097.
https://doi.org/10.1007/s00339-004-2889-2

Milinović V, Bibić NM, Dhar S, Šiljegović M, Schaaf P, Lieb K. Nitrogen irradiation of Fe/Si bilayers: nitride versus silicide phase formation. in Applied Physics. A: Materials Science and Processing. 2004;79(8):2093-2097.
doi:10.1007/s00339-004-2889-2 .

Milinović, Velimir, Bibić, Nataša M., Dhar, S, Šiljegović, Milorad, Schaaf, P, Lieb, KP, "Nitrogen irradiation of Fe/Si bilayers: nitride versus silicide phase formation" in Applied Physics. A: Materials Science and Processing, 79, no. 8 (2004):2093-2097,
https://doi.org/10.1007/s00339-004-2889-2 . .

TY  - JOUR
AU  - Bibić, Nataša M.
AU  - Milinović, Velimir
AU  - Dhar, S
AU  - Lieb, KP
AU  - Milosavljević, Momir
AU  - Šiljegović, Milorad
AU  - Peruško, Davor
AU  - Schaaf, P
PY  - 2004
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6451
AB  - This article reports on the formation of iron nitrides during nitrogen ion irradiation of Fe/Si bilayers at room temperature. The 30 nm Fe-57/Si bilayers were prepared by pulsed laser ablation and irradiated with 22 keV N2+ ions at fluences of (0.6-2)x 10(17) ions/cm(2). The structural changes and phases formed by irradiation were analyzed by Rutherford backscattering spectroscopy (RBS), X-ray diffraction analysis (XRD) and conversion electron Mossbauer spectroscopy (CEMS). The results clearly show the formation of several iron nitrides. At the lower fluences, the samples contain a mixture of epsilon-Fe2+x N and alpha-Fe with nitrogen interstitials. For the highest fluence, the paramagnetic epsilon-Fe-2 N (61%) phase predominated. It can be concluded that the elemental iron almost fully transforms to an iron-nitride layer, but that no iron silicides are formed. (C) 2003 Elsevier B.V. All rights reserved.
T2  - Thin Solid Films
T1  - Formation of iron-nitrides by irradiation of Fe-57/Si bilayers with N2+ ions
VL  - 459
IS  - 1-2
SP  - 23
EP  - 27
DO  - 10.1016/j.tsf.2003.12.077
ER  - 

@article{
author = "Bibić, Nataša M. and Milinović, Velimir and Dhar, S and Lieb, KP and Milosavljević, Momir and Šiljegović, Milorad and Peruško, Davor and Schaaf, P",
year = "2004",
abstract = "This article reports on the formation of iron nitrides during nitrogen ion irradiation of Fe/Si bilayers at room temperature. The 30 nm Fe-57/Si bilayers were prepared by pulsed laser ablation and irradiated with 22 keV N2+ ions at fluences of (0.6-2)x 10(17) ions/cm(2). The structural changes and phases formed by irradiation were analyzed by Rutherford backscattering spectroscopy (RBS), X-ray diffraction analysis (XRD) and conversion electron Mossbauer spectroscopy (CEMS). The results clearly show the formation of several iron nitrides. At the lower fluences, the samples contain a mixture of epsilon-Fe2+x N and alpha-Fe with nitrogen interstitials. For the highest fluence, the paramagnetic epsilon-Fe-2 N (61%) phase predominated. It can be concluded that the elemental iron almost fully transforms to an iron-nitride layer, but that no iron silicides are formed. (C) 2003 Elsevier B.V. All rights reserved.",
journal = "Thin Solid Films",
title = "Formation of iron-nitrides by irradiation of Fe-57/Si bilayers with N2+ ions",
volume = "459",
number = "1-2",
pages = "23-27",
doi = "10.1016/j.tsf.2003.12.077"
}

Bibić, N. M., Milinović, V., Dhar, S., Lieb, K., Milosavljević, M., Šiljegović, M., Peruško, D.,& Schaaf, P.. (2004). Formation of iron-nitrides by irradiation of Fe-57/Si bilayers with N2+ ions. in Thin Solid Films, 459(1-2), 23-27.
https://doi.org/10.1016/j.tsf.2003.12.077

Bibić NM, Milinović V, Dhar S, Lieb K, Milosavljević M, Šiljegović M, Peruško D, Schaaf P. Formation of iron-nitrides by irradiation of Fe-57/Si bilayers with N2+ ions. in Thin Solid Films. 2004;459(1-2):23-27.
doi:10.1016/j.tsf.2003.12.077 .

Bibić, Nataša M., Milinović, Velimir, Dhar, S, Lieb, KP, Milosavljević, Momir, Šiljegović, Milorad, Peruško, Davor, Schaaf, P, "Formation of iron-nitrides by irradiation of Fe-57/Si bilayers with N2+ ions" in Thin Solid Films, 459, no. 1-2 (2004):23-27,
https://doi.org/10.1016/j.tsf.2003.12.077 . .

TY  - JOUR
AU  - Dhar, S
AU  - Schaaf, P
AU  - Lieb, KP
AU  - Bibić, Nataša M.
AU  - Milosavljević, Momir
AU  - Sajavaara, T
AU  - Keinonen, J
AU  - Traverse, A
PY  - 2003
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6364
AB  - Thin Fe and Ta layers of 30-45 nm thickness, deposited via magnetron sputtering on Si (100) substrates, were bombarded at room temperature with 100 kev Ar1+ or Ar8+ or with 250 keV Xe1+ or Xe19+ ions in order to test the influence of the ion charge state on the surface sputtering and interface mixing. The samples were characterized by means of Rutherford backscattering at 0.9-3.0 MeV alpha-particle energy, time-of-flight elastic recoil detection analysis with a 53 MeV 127I(10+) beam and atomic force microscopy, No influence of the charge state on the sputtering and athermal mixing rate was observed in the case of the Ta/Si system. However, in the case of the Fe/Si system, the ion charge was observed to have an influence on the mixing rate. (C) 2003 Elsevier Science B.V. All rights reserved.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Ion beam mixing in Fe/Si and Ta/Si bilayers: Possible effects of ion charges
VL  - 205
SP  - 741
EP  - 745
DO  - 10.1016/S0168-583X(03)00578-0
ER  - 

@article{
author = "Dhar, S and Schaaf, P and Lieb, KP and Bibić, Nataša M. and Milosavljević, Momir and Sajavaara, T and Keinonen, J and Traverse, A",
year = "2003",
abstract = "Thin Fe and Ta layers of 30-45 nm thickness, deposited via magnetron sputtering on Si (100) substrates, were bombarded at room temperature with 100 kev Ar1+ or Ar8+ or with 250 keV Xe1+ or Xe19+ ions in order to test the influence of the ion charge state on the surface sputtering and interface mixing. The samples were characterized by means of Rutherford backscattering at 0.9-3.0 MeV alpha-particle energy, time-of-flight elastic recoil detection analysis with a 53 MeV 127I(10+) beam and atomic force microscopy, No influence of the charge state on the sputtering and athermal mixing rate was observed in the case of the Ta/Si system. However, in the case of the Fe/Si system, the ion charge was observed to have an influence on the mixing rate. (C) 2003 Elsevier Science B.V. All rights reserved.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Ion beam mixing in Fe/Si and Ta/Si bilayers: Possible effects of ion charges",
volume = "205",
pages = "741-745",
doi = "10.1016/S0168-583X(03)00578-0"
}

Dhar, S., Schaaf, P., Lieb, K., Bibić, N. M., Milosavljević, M., Sajavaara, T., Keinonen, J.,& Traverse, A.. (2003). Ion beam mixing in Fe/Si and Ta/Si bilayers: Possible effects of ion charges. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 205, 741-745.
https://doi.org/10.1016/S0168-583X(03)00578-0

Dhar S, Schaaf P, Lieb K, Bibić NM, Milosavljević M, Sajavaara T, Keinonen J, Traverse A. Ion beam mixing in Fe/Si and Ta/Si bilayers: Possible effects of ion charges. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2003;205:741-745.
doi:10.1016/S0168-583X(03)00578-0 .

Dhar, S, Schaaf, P, Lieb, KP, Bibić, Nataša M., Milosavljević, Momir, Sajavaara, T, Keinonen, J, Traverse, A, "Ion beam mixing in Fe/Si and Ta/Si bilayers: Possible effects of ion charges" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 205 (2003):741-745,
https://doi.org/10.1016/S0168-583X(03)00578-0 . .

TY  - JOUR
AU  - Dhar, S
AU  - Schaaff, P
AU  - Bibić, Nataša M.
AU  - Hooker, E
AU  - Milosavljević, Momir
AU  - Lieb, KP
PY  - 2003
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/2620
AB  - Silicide formation and ion beam mixing of Fe/Si bilayers due to Ar-, Xe- and Au-ion irradiations at room and liquid-nitrogen temperatures were investigated. For the study of silicide phase formation, the Fe/Si bilayers were irradiated with 100-keV Ar+, 250-keV Xe+, 700-keV Xe2+ or 400-keV Au+ ions at fluences of 1 x 10(15) to 2 x 10(16) ions/cm(2). The influence of the ion-charge state on the mixing process was studied in Fe/Si by 100-keV Ar8+-ion implantation, in addition to the corresponding irradiations with singly charged ions at the same energy. Changes in the samples were analyzed by Rutherford backscattering spectroscopy, conversion electron Mossbauer spectroscopy, X-ray diffraction and atomic force microscopy. Pronounced structural changes and the intermixing of the components at the Fe/Si interfaces were measured as a function of the ion species, ion fluence and, sample temperature. A linear correlation between the interface broadening and the fluence was observed for all the cases. Mossbauer analysis with enriched Fe-57 layers revealed the onset of phase formation out of the solid solution. In order to interpret the mixing rates in this most general case, we considered mixing through thermal local or global spikes and compound formation. The highly charged Ar8+-ion irradiation produced a higher athermal mixing rate compared to singly charged Ar+ ions, and this result could not be explained by the above models.
T2  - Applied Physics. A: Materials Science and Processing
T1  - Ion-beam mixing in Fe/Si bilayers by singly and highly charged ions: evolution of phases, spike mechanism and possible effects of the ion-charge
VL  - 76
IS  - 5
SP  - 773
EP  - 780
DO  - 10.1007/s00339-002-2045-9
ER  - 

@article{
author = "Dhar, S and Schaaff, P and Bibić, Nataša M. and Hooker, E and Milosavljević, Momir and Lieb, KP",
year = "2003",
abstract = "Silicide formation and ion beam mixing of Fe/Si bilayers due to Ar-, Xe- and Au-ion irradiations at room and liquid-nitrogen temperatures were investigated. For the study of silicide phase formation, the Fe/Si bilayers were irradiated with 100-keV Ar+, 250-keV Xe+, 700-keV Xe2+ or 400-keV Au+ ions at fluences of 1 x 10(15) to 2 x 10(16) ions/cm(2). The influence of the ion-charge state on the mixing process was studied in Fe/Si by 100-keV Ar8+-ion implantation, in addition to the corresponding irradiations with singly charged ions at the same energy. Changes in the samples were analyzed by Rutherford backscattering spectroscopy, conversion electron Mossbauer spectroscopy, X-ray diffraction and atomic force microscopy. Pronounced structural changes and the intermixing of the components at the Fe/Si interfaces were measured as a function of the ion species, ion fluence and, sample temperature. A linear correlation between the interface broadening and the fluence was observed for all the cases. Mossbauer analysis with enriched Fe-57 layers revealed the onset of phase formation out of the solid solution. In order to interpret the mixing rates in this most general case, we considered mixing through thermal local or global spikes and compound formation. The highly charged Ar8+-ion irradiation produced a higher athermal mixing rate compared to singly charged Ar+ ions, and this result could not be explained by the above models.",
journal = "Applied Physics. A: Materials Science and Processing",
title = "Ion-beam mixing in Fe/Si bilayers by singly and highly charged ions: evolution of phases, spike mechanism and possible effects of the ion-charge",
volume = "76",
number = "5",
pages = "773-780",
doi = "10.1007/s00339-002-2045-9"
}

Dhar, S., Schaaff, P., Bibić, N. M., Hooker, E., Milosavljević, M.,& Lieb, K.. (2003). Ion-beam mixing in Fe/Si bilayers by singly and highly charged ions: evolution of phases, spike mechanism and possible effects of the ion-charge. in Applied Physics. A: Materials Science and Processing, 76(5), 773-780.
https://doi.org/10.1007/s00339-002-2045-9

Dhar S, Schaaff P, Bibić NM, Hooker E, Milosavljević M, Lieb K. Ion-beam mixing in Fe/Si bilayers by singly and highly charged ions: evolution of phases, spike mechanism and possible effects of the ion-charge. in Applied Physics. A: Materials Science and Processing. 2003;76(5):773-780.
doi:10.1007/s00339-002-2045-9 .

Dhar, S, Schaaff, P, Bibić, Nataša M., Hooker, E, Milosavljević, Momir, Lieb, KP, "Ion-beam mixing in Fe/Si bilayers by singly and highly charged ions: evolution of phases, spike mechanism and possible effects of the ion-charge" in Applied Physics. A: Materials Science and Processing, 76, no. 5 (2003):773-780,
https://doi.org/10.1007/s00339-002-2045-9 . .

TY  - JOUR
AU  - Bibić, Nataša M.
AU  - Dhar, S
AU  - Lieb, KP
AU  - Milosavljević, Momir
AU  - Schaaf, P
AU  - Huang, YL
AU  - Seibt, M
AU  - Homewood, Kevin P.
AU  - McKinty, C
PY  - 2002
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6340
AB  - This study deals with structural and optical properties of beta-FeSi(2) layers produced by direct ion beam mixing of Fe/Si bilayers with Xe ions. By irradiation of 35 nm Fe on Si, at 600 degreesC with 205 keV Xe to 2 X 10(16) ions/cm(2), the formation of similar to 105 nm single-phase beta-FeSi(2) layers was achieved. Their structures were analyzed by Rutherford backscattering spectroscopy, X-ray diffraction, conversion electron Mossbauer spectroscopy, high resolution transmission electron microscopy, and photo-absorption. The structural analyses revealed that the beta-FeSi(2) layers grow in the form of irregularly shaped crystal grains, with a pronounced surface morphology, but with a rather sharp silicide/silicon interface. The grains that originate from the interface are epitaxially oriented relative to the Si(100) substrate. Optical absorption, as compared with that in beta-FeSi(2) layers produced by ion beam synthesis or co-sputter deposition, indicates a direct band gap of 0.92 eV A pronounced surface roughness of the ion beam mixed layers yielded photo-absorption approximately three times higher as compared with the other two sets of samples. The band gap stays nearly constant over the temperature range from 80 to 295 K. This is tentatively assigned to a high degree of structural disorder and stress induced in the ion beam mixed beta-FeSi(2) layers. (C) 2002 Elsevier Science B.V. All rights reserved.
T2  - Surface and Coatings Technology
T1  - Structural and optical properties of beta-FeSi(2) layers grown by ion beam mixing
VL  - 158
SP  - 198
EP  - 202
DO  - 10.1016/S0257-8972(02)00205-0
ER  - 

@article{
author = "Bibić, Nataša M. and Dhar, S and Lieb, KP and Milosavljević, Momir and Schaaf, P and Huang, YL and Seibt, M and Homewood, Kevin P. and McKinty, C",
year = "2002",
abstract = "This study deals with structural and optical properties of beta-FeSi(2) layers produced by direct ion beam mixing of Fe/Si bilayers with Xe ions. By irradiation of 35 nm Fe on Si, at 600 degreesC with 205 keV Xe to 2 X 10(16) ions/cm(2), the formation of similar to 105 nm single-phase beta-FeSi(2) layers was achieved. Their structures were analyzed by Rutherford backscattering spectroscopy, X-ray diffraction, conversion electron Mossbauer spectroscopy, high resolution transmission electron microscopy, and photo-absorption. The structural analyses revealed that the beta-FeSi(2) layers grow in the form of irregularly shaped crystal grains, with a pronounced surface morphology, but with a rather sharp silicide/silicon interface. The grains that originate from the interface are epitaxially oriented relative to the Si(100) substrate. Optical absorption, as compared with that in beta-FeSi(2) layers produced by ion beam synthesis or co-sputter deposition, indicates a direct band gap of 0.92 eV A pronounced surface roughness of the ion beam mixed layers yielded photo-absorption approximately three times higher as compared with the other two sets of samples. The band gap stays nearly constant over the temperature range from 80 to 295 K. This is tentatively assigned to a high degree of structural disorder and stress induced in the ion beam mixed beta-FeSi(2) layers. (C) 2002 Elsevier Science B.V. All rights reserved.",
journal = "Surface and Coatings Technology",
title = "Structural and optical properties of beta-FeSi(2) layers grown by ion beam mixing",
volume = "158",
pages = "198-202",
doi = "10.1016/S0257-8972(02)00205-0"
}

Bibić, N. M., Dhar, S., Lieb, K., Milosavljević, M., Schaaf, P., Huang, Y., Seibt, M., Homewood, K. P.,& McKinty, C.. (2002). Structural and optical properties of beta-FeSi(2) layers grown by ion beam mixing. in Surface and Coatings Technology, 158, 198-202.
https://doi.org/10.1016/S0257-8972(02)00205-0

Bibić NM, Dhar S, Lieb K, Milosavljević M, Schaaf P, Huang Y, Seibt M, Homewood KP, McKinty C. Structural and optical properties of beta-FeSi(2) layers grown by ion beam mixing. in Surface and Coatings Technology. 2002;158:198-202.
doi:10.1016/S0257-8972(02)00205-0 .

Bibić, Nataša M., Dhar, S, Lieb, KP, Milosavljević, Momir, Schaaf, P, Huang, YL, Seibt, M, Homewood, Kevin P., McKinty, C, "Structural and optical properties of beta-FeSi(2) layers grown by ion beam mixing" in Surface and Coatings Technology, 158 (2002):198-202,
https://doi.org/10.1016/S0257-8972(02)00205-0 . .

TY  - JOUR
AU  - Dhar, S
AU  - Milosavljević, Momir
AU  - Bibić, Nataša M.
AU  - Lieb, KP
PY  - 2002
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/2492
AB  - This article focuses on the influence of chemical driving forces on the mixing and phase formation taking place at the interface of highly reactive metal/semiconductor systems under ion-beam irradiation. Ta/Si bilayers were irradiated with Ar, Kr, and Xe ions to fluences of (0.5-2.5) X 10(16) ions/cm(2) and at temperatures between liquid nitrogen and 400degreesC. The interface mixing and silicide formation were monitored as function of the ion mass and fluence by means of Rutherford backscattering spectrometry and x-ray diffraction. The interface broadening variance was found to depend linearly on the ion fluence and was explained with the help of a compound formation model involving local or global thermal spikes. The results are compared with those found in other silicide and germanide systems. The transition from local to global spikes was found to occur at the critical deposited damage energy of about 2.5 keV/nm.
T2  - Physical Review B: Condensed Matter and Materials Physics
T1  - Atomic mixing and interface reactions in Ta/Si bilayers during noble-gas ion irradiation
VL  - 65
IS  - 2
DO  - 10.1103/PhysRevB.65.024109
ER  - 

@article{
author = "Dhar, S and Milosavljević, Momir and Bibić, Nataša M. and Lieb, KP",
year = "2002",
abstract = "This article focuses on the influence of chemical driving forces on the mixing and phase formation taking place at the interface of highly reactive metal/semiconductor systems under ion-beam irradiation. Ta/Si bilayers were irradiated with Ar, Kr, and Xe ions to fluences of (0.5-2.5) X 10(16) ions/cm(2) and at temperatures between liquid nitrogen and 400degreesC. The interface mixing and silicide formation were monitored as function of the ion mass and fluence by means of Rutherford backscattering spectrometry and x-ray diffraction. The interface broadening variance was found to depend linearly on the ion fluence and was explained with the help of a compound formation model involving local or global thermal spikes. The results are compared with those found in other silicide and germanide systems. The transition from local to global spikes was found to occur at the critical deposited damage energy of about 2.5 keV/nm.",
journal = "Physical Review B: Condensed Matter and Materials Physics",
title = "Atomic mixing and interface reactions in Ta/Si bilayers during noble-gas ion irradiation",
volume = "65",
number = "2",
doi = "10.1103/PhysRevB.65.024109"
}

Dhar, S., Milosavljević, M., Bibić, N. M.,& Lieb, K.. (2002). Atomic mixing and interface reactions in Ta/Si bilayers during noble-gas ion irradiation. in Physical Review B: Condensed Matter and Materials Physics, 65(2).
https://doi.org/10.1103/PhysRevB.65.024109

Dhar S, Milosavljević M, Bibić NM, Lieb K. Atomic mixing and interface reactions in Ta/Si bilayers during noble-gas ion irradiation. in Physical Review B: Condensed Matter and Materials Physics. 2002;65(2).
doi:10.1103/PhysRevB.65.024109 .

Dhar, S, Milosavljević, Momir, Bibić, Nataša M., Lieb, KP, "Atomic mixing and interface reactions in Ta/Si bilayers during noble-gas ion irradiation" in Physical Review B: Condensed Matter and Materials Physics, 65, no. 2 (2002),
https://doi.org/10.1103/PhysRevB.65.024109 . .

TY  - JOUR
AU  - Milosavljević, Momir
AU  - Dhar, S
AU  - Schaaf, P
AU  - Bibić, Nataša M.
AU  - Huang, YL
AU  - Seibt, M
AU  - Lieb, KP
PY  - 2001
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/2470
AB  - A detailed study of the formation of beta -FeSi2 films by ion-beam mixing of Fe/Si bilayers with noble gas ions is presented. Fe films of 35-50 nm deposited on Si (100) were irradiated with 80-700 keV Ar, Kr, or Xe ions in a wide temperature interval, from room temperature to 600 degreesC. The structures were analyzed by Rutherford backscattering spectroscopy, x-ray diffraction, conversion electron Mossbauer spectroscopy, elastic recoil detection analysis, cross-section high resolution transmission electron microscopy, and energy dispersive x-ray spectroscopy. Already after Xe irradiation at 300 degreesC the whole Fe layer is transformed to a mixture of Fe3Si, epsilon -FeSi, and beta -FeSi2 phases. At 400-450 degreesC, a unique, layer by layer growth of beta -FeSi2 starting from the surface was found. A full transformation of 35 nm Fe on Si to a 105 nm beta -FeSi2 layer was achieved by irradiation with 205 keV Xe to 2x10(16) ions/cm(2), at a temperature of 600 degreesC. The fully ion-beam grown layers exhibit a pronounced surface roughness, but a sharp interface to Si. This structure is assigned to a growth of beta -FeSi2 grains in a local surrounding of interdiffused silicon. Rapid diffusion of silicon to the surface was observed during all ion irradiations. Single-phase beta -FeSi2 layers were also synthesized by vacuum annealing for 2 h at 600 degreesC of 35 nm Fe/Si bilayers premixed with Xe at 450 degreesC. In this case, the layers form with a smoother surface topography. It is concluded that ion-beam mixing can be used successfully for growth of beta -FeSi2 layers at moderate temperatures, either directly or combined with postirradiation annealing. (C) 2001 American Institute of Physics.
T2  - Journal of Applied Physics
T1  - Growth of beta-FeSi2 films via noble-gas ion-beam mixing of Fe/Si bilayers
VL  - 90
IS  - 9
SP  - 4474
EP  - 4484
DO  - 10.1063/1.1405818
ER  - 

@article{
author = "Milosavljević, Momir and Dhar, S and Schaaf, P and Bibić, Nataša M. and Huang, YL and Seibt, M and Lieb, KP",
year = "2001",
abstract = "A detailed study of the formation of beta -FeSi2 films by ion-beam mixing of Fe/Si bilayers with noble gas ions is presented. Fe films of 35-50 nm deposited on Si (100) were irradiated with 80-700 keV Ar, Kr, or Xe ions in a wide temperature interval, from room temperature to 600 degreesC. The structures were analyzed by Rutherford backscattering spectroscopy, x-ray diffraction, conversion electron Mossbauer spectroscopy, elastic recoil detection analysis, cross-section high resolution transmission electron microscopy, and energy dispersive x-ray spectroscopy. Already after Xe irradiation at 300 degreesC the whole Fe layer is transformed to a mixture of Fe3Si, epsilon -FeSi, and beta -FeSi2 phases. At 400-450 degreesC, a unique, layer by layer growth of beta -FeSi2 starting from the surface was found. A full transformation of 35 nm Fe on Si to a 105 nm beta -FeSi2 layer was achieved by irradiation with 205 keV Xe to 2x10(16) ions/cm(2), at a temperature of 600 degreesC. The fully ion-beam grown layers exhibit a pronounced surface roughness, but a sharp interface to Si. This structure is assigned to a growth of beta -FeSi2 grains in a local surrounding of interdiffused silicon. Rapid diffusion of silicon to the surface was observed during all ion irradiations. Single-phase beta -FeSi2 layers were also synthesized by vacuum annealing for 2 h at 600 degreesC of 35 nm Fe/Si bilayers premixed with Xe at 450 degreesC. In this case, the layers form with a smoother surface topography. It is concluded that ion-beam mixing can be used successfully for growth of beta -FeSi2 layers at moderate temperatures, either directly or combined with postirradiation annealing. (C) 2001 American Institute of Physics.",
journal = "Journal of Applied Physics",
title = "Growth of beta-FeSi2 films via noble-gas ion-beam mixing of Fe/Si bilayers",
volume = "90",
number = "9",
pages = "4474-4484",
doi = "10.1063/1.1405818"
}

Milosavljević, M., Dhar, S., Schaaf, P., Bibić, N. M., Huang, Y., Seibt, M.,& Lieb, K.. (2001). Growth of beta-FeSi2 films via noble-gas ion-beam mixing of Fe/Si bilayers. in Journal of Applied Physics, 90(9), 4474-4484.
https://doi.org/10.1063/1.1405818

Milosavljević M, Dhar S, Schaaf P, Bibić NM, Huang Y, Seibt M, Lieb K. Growth of beta-FeSi2 films via noble-gas ion-beam mixing of Fe/Si bilayers. in Journal of Applied Physics. 2001;90(9):4474-4484.
doi:10.1063/1.1405818 .

Milosavljević, Momir, Dhar, S, Schaaf, P, Bibić, Nataša M., Huang, YL, Seibt, M, Lieb, KP, "Growth of beta-FeSi2 films via noble-gas ion-beam mixing of Fe/Si bilayers" in Journal of Applied Physics, 90, no. 9 (2001):4474-4484,
https://doi.org/10.1063/1.1405818 . .

TY  - JOUR
AU  - Bibić, Nataša M.
AU  - Dhar, S
AU  - Milosavljević, Momir
AU  - Removic, K
AU  - Rissanen, L
AU  - Lieb, KP
PY  - 2000
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6287
AB  - We report on the room-temperature synthesis of the low-resistivity TaSi2 phase using ion-beam mixing of Ta/Si bilayers with Ar ions. The formation of the silicide phase is observed for different damage energies deposited at the Tal Si interface. The variance Delta sigma(2) of the reacted (TaSi2) layer thickness varies linearly with the ion fluence Phi and the reaction rate Delta sigma(2)/Phi, is proportional to the deposited damage energy density F-D. The measured mixing/reaction efficiency, Delta sigma(2)/Phi F-D = 10 +/- 1 nm(5)/keV, is in agreement with the value calculated by the model of compound formation under local thermal spikes. (C) 2000 Elsevier Science B.V. All rights reserved.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Interface mixing in Ta/Si bilayers with Ar ions
VL  - 161
SP  - 1011
EP  - 1015
DO  - 10.1016/S0168-583X(99)00838-1
ER  - 

@article{
author = "Bibić, Nataša M. and Dhar, S and Milosavljević, Momir and Removic, K and Rissanen, L and Lieb, KP",
year = "2000",
abstract = "We report on the room-temperature synthesis of the low-resistivity TaSi2 phase using ion-beam mixing of Ta/Si bilayers with Ar ions. The formation of the silicide phase is observed for different damage energies deposited at the Tal Si interface. The variance Delta sigma(2) of the reacted (TaSi2) layer thickness varies linearly with the ion fluence Phi and the reaction rate Delta sigma(2)/Phi, is proportional to the deposited damage energy density F-D. The measured mixing/reaction efficiency, Delta sigma(2)/Phi F-D = 10 +/- 1 nm(5)/keV, is in agreement with the value calculated by the model of compound formation under local thermal spikes. (C) 2000 Elsevier Science B.V. All rights reserved.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Interface mixing in Ta/Si bilayers with Ar ions",
volume = "161",
pages = "1011-1015",
doi = "10.1016/S0168-583X(99)00838-1"
}

Bibić, N. M., Dhar, S., Milosavljević, M., Removic, K., Rissanen, L.,& Lieb, K.. (2000). Interface mixing in Ta/Si bilayers with Ar ions. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 161, 1011-1015.
https://doi.org/10.1016/S0168-583X(99)00838-1

Bibić NM, Dhar S, Milosavljević M, Removic K, Rissanen L, Lieb K. Interface mixing in Ta/Si bilayers with Ar ions. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2000;161:1011-1015.
doi:10.1016/S0168-583X(99)00838-1 .

Bibić, Nataša M., Dhar, S, Milosavljević, Momir, Removic, K, Rissanen, L, Lieb, KP, "Interface mixing in Ta/Si bilayers with Ar ions" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 161 (2000):1011-1015,
https://doi.org/10.1016/S0168-583X(99)00838-1 . .

TY  - JOUR
AU  - Dhar, S
AU  - Milosavljević, Momir
AU  - Bibić, Nataša M.
AU  - Lieb, KP
PY  - 2000
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/2396
AB  - Thin Ta layers deposited on Si (100) substrates were irradiated with 475 keV Xe+ ions to fluences of (0.5-2) x 10(16) ions/cm(2) at temperatures between room temperature and 400 degreesC. By means of Rutherford Backscattering Spectrometry, the interface mixing and tantalum silicide formation were monitored as function of the ion fluence. TaSi2 phase formation was verified using X-ray diffraction. The interface broadening variance was found to depend linearly on the ion fluence and was explained with the help of a compound formation model involving global thermal spikes.
T2  - Physica Status Solidi. B: Basic Research
T1  - Mixing and silicide formation during Xe-ion beam irradiations of Ta/Si bilayers
VL  - 222
IS  - 1
SP  - 295
EP  - 302
DO  - 10.1002/1521-3951(200011)222:1 LT 295::AID-PSSB295 GT 3.3.CO;2-5
ER  - 

@article{
author = "Dhar, S and Milosavljević, Momir and Bibić, Nataša M. and Lieb, KP",
year = "2000",
abstract = "Thin Ta layers deposited on Si (100) substrates were irradiated with 475 keV Xe+ ions to fluences of (0.5-2) x 10(16) ions/cm(2) at temperatures between room temperature and 400 degreesC. By means of Rutherford Backscattering Spectrometry, the interface mixing and tantalum silicide formation were monitored as function of the ion fluence. TaSi2 phase formation was verified using X-ray diffraction. The interface broadening variance was found to depend linearly on the ion fluence and was explained with the help of a compound formation model involving global thermal spikes.",
journal = "Physica Status Solidi. B: Basic Research",
title = "Mixing and silicide formation during Xe-ion beam irradiations of Ta/Si bilayers",
volume = "222",
number = "1",
pages = "295-302",
doi = "10.1002/1521-3951(200011)222:1 LT 295::AID-PSSB295 GT 3.3.CO;2-5"
}

Dhar, S., Milosavljević, M., Bibić, N. M.,& Lieb, K.. (2000). Mixing and silicide formation during Xe-ion beam irradiations of Ta/Si bilayers. in Physica Status Solidi. B: Basic Research, 222(1), 295-302.
https://doi.org/10.1002/1521-3951(200011)222:1 LT 295::AID-PSSB295 GT 3.3.CO;2-5

Dhar S, Milosavljević M, Bibić NM, Lieb K. Mixing and silicide formation during Xe-ion beam irradiations of Ta/Si bilayers. in Physica Status Solidi. B: Basic Research. 2000;222(1):295-302.
doi:10.1002/1521-3951(200011)222:1 LT 295::AID-PSSB295 GT 3.3.CO;2-5 .

Dhar, S, Milosavljević, Momir, Bibić, Nataša M., Lieb, KP, "Mixing and silicide formation during Xe-ion beam irradiations of Ta/Si bilayers" in Physica Status Solidi. B: Basic Research, 222, no. 1 (2000):295-302,
https://doi.org/10.1002/1521-3951(200011)222:1 LT 295::AID-PSSB295 GT 3.3.CO;2-5 . .

TY  - JOUR
AU  - Milosavljević, Momir
AU  - Dhar, S
AU  - Schaaf, P
AU  - Bibić, Nataša M.
AU  - Han, M
AU  - Lieb, KP
PY  - 2000
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/2366
AB  - The iron di-silicide beta-FeSi2 is a promising direct band gap semiconductor but difficult to produce. Here, the successful direct synthesis of this phase by ion beam mixing of Fe/Si bilayers at temperatures in the range of 450 to 550 degrees C is reported. The obtained single-phase beta-FeSi2 layers and their structure are confirmed by Rutherford backscattering spectrometry, X-ray diffraction and conversion electron Mossbauer spectroscopy. PACS: 61.80.Jh; 68.55.Nq; 61.82.Fk.
T2  - Applied Physics. A: Materials Science and Processing
T1  - Direct synthesis of beta-FeSi2 by ion beam mixing of Fe/Si bilayers
VL  - 71
IS  - 1
SP  - 43
EP  - 45
UR  - https://hdl.handle.net/21.15107/rcub_vinar_2366
ER  - 

@article{
author = "Milosavljević, Momir and Dhar, S and Schaaf, P and Bibić, Nataša M. and Han, M and Lieb, KP",
year = "2000",
abstract = "The iron di-silicide beta-FeSi2 is a promising direct band gap semiconductor but difficult to produce. Here, the successful direct synthesis of this phase by ion beam mixing of Fe/Si bilayers at temperatures in the range of 450 to 550 degrees C is reported. The obtained single-phase beta-FeSi2 layers and their structure are confirmed by Rutherford backscattering spectrometry, X-ray diffraction and conversion electron Mossbauer spectroscopy. PACS: 61.80.Jh; 68.55.Nq; 61.82.Fk.",
journal = "Applied Physics. A: Materials Science and Processing",
title = "Direct synthesis of beta-FeSi2 by ion beam mixing of Fe/Si bilayers",
volume = "71",
number = "1",
pages = "43-45",
url = "https://hdl.handle.net/21.15107/rcub_vinar_2366"
}

Milosavljević, M., Dhar, S., Schaaf, P., Bibić, N. M., Han, M.,& Lieb, K.. (2000). Direct synthesis of beta-FeSi2 by ion beam mixing of Fe/Si bilayers. in Applied Physics. A: Materials Science and Processing, 71(1), 43-45.
https://hdl.handle.net/21.15107/rcub_vinar_2366

Milosavljević M, Dhar S, Schaaf P, Bibić NM, Han M, Lieb K. Direct synthesis of beta-FeSi2 by ion beam mixing of Fe/Si bilayers. in Applied Physics. A: Materials Science and Processing. 2000;71(1):43-45.
https://hdl.handle.net/21.15107/rcub_vinar_2366 .

Milosavljević, Momir, Dhar, S, Schaaf, P, Bibić, Nataša M., Han, M, Lieb, KP, "Direct synthesis of beta-FeSi2 by ion beam mixing of Fe/Si bilayers" in Applied Physics. A: Materials Science and Processing, 71, no. 1 (2000):43-45,
https://hdl.handle.net/21.15107/rcub_vinar_2366 .