Ion beam mixing in Fe/Si and Ta/Si bilayers: Possible effects of ion charges
Нема приказа
Аутори
Dhar, SSchaaf, P
Lieb, KP
Bibić, Nataša M.
Milosavljević, Momir
Sajavaara, T
Keinonen, J
Traverse, A
Чланак у часопису
Метаподаци
Приказ свих података о документуАпстракт
Thin Fe and Ta layers of 30-45 nm thickness, deposited via magnetron sputtering on Si (100) substrates, were bombarded at room temperature with 100 kev Ar1+ or Ar8+ or with 250 keV Xe1+ or Xe19+ ions in order to test the influence of the ion charge state on the surface sputtering and interface mixing. The samples were characterized by means of Rutherford backscattering at 0.9-3.0 MeV alpha-particle energy, time-of-flight elastic recoil detection analysis with a 53 MeV 127I(10+) beam and atomic force microscopy, No influence of the charge state on the sputtering and athermal mixing rate was observed in the case of the Ta/Si system. However, in the case of the Fe/Si system, the ion charge was observed to have an influence on the mixing rate. (C) 2003 Elsevier Science B.V. All rights reserved.
Кључне речи:
ion beam mixing / highly-charged ion / ion irradiation / RBS / TOF-ERDAИзвор:
Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 2003, 205, 741-745Напомена:
- 11th International Conference on the Physics of Highly Charged Ions (HCI 2002), Sep 01-06, 2002, Caen, France
DOI: 10.1016/S0168-583X(03)00578-0
ISSN: 0168-583X
WoS: 000183211200142
Scopus: 2-s2.0-0038331869
Колекције
Институција/група
VinčaTY - JOUR AU - Dhar, S AU - Schaaf, P AU - Lieb, KP AU - Bibić, Nataša M. AU - Milosavljević, Momir AU - Sajavaara, T AU - Keinonen, J AU - Traverse, A PY - 2003 UR - https://vinar.vin.bg.ac.rs/handle/123456789/6364 AB - Thin Fe and Ta layers of 30-45 nm thickness, deposited via magnetron sputtering on Si (100) substrates, were bombarded at room temperature with 100 kev Ar1+ or Ar8+ or with 250 keV Xe1+ or Xe19+ ions in order to test the influence of the ion charge state on the surface sputtering and interface mixing. The samples were characterized by means of Rutherford backscattering at 0.9-3.0 MeV alpha-particle energy, time-of-flight elastic recoil detection analysis with a 53 MeV 127I(10+) beam and atomic force microscopy, No influence of the charge state on the sputtering and athermal mixing rate was observed in the case of the Ta/Si system. However, in the case of the Fe/Si system, the ion charge was observed to have an influence on the mixing rate. (C) 2003 Elsevier Science B.V. All rights reserved. T2 - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms T1 - Ion beam mixing in Fe/Si and Ta/Si bilayers: Possible effects of ion charges VL - 205 SP - 741 EP - 745 DO - 10.1016/S0168-583X(03)00578-0 ER -
@article{ author = "Dhar, S and Schaaf, P and Lieb, KP and Bibić, Nataša M. and Milosavljević, Momir and Sajavaara, T and Keinonen, J and Traverse, A", year = "2003", abstract = "Thin Fe and Ta layers of 30-45 nm thickness, deposited via magnetron sputtering on Si (100) substrates, were bombarded at room temperature with 100 kev Ar1+ or Ar8+ or with 250 keV Xe1+ or Xe19+ ions in order to test the influence of the ion charge state on the surface sputtering and interface mixing. The samples were characterized by means of Rutherford backscattering at 0.9-3.0 MeV alpha-particle energy, time-of-flight elastic recoil detection analysis with a 53 MeV 127I(10+) beam and atomic force microscopy, No influence of the charge state on the sputtering and athermal mixing rate was observed in the case of the Ta/Si system. However, in the case of the Fe/Si system, the ion charge was observed to have an influence on the mixing rate. (C) 2003 Elsevier Science B.V. All rights reserved.", journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms", title = "Ion beam mixing in Fe/Si and Ta/Si bilayers: Possible effects of ion charges", volume = "205", pages = "741-745", doi = "10.1016/S0168-583X(03)00578-0" }
Dhar, S., Schaaf, P., Lieb, K., Bibić, N. M., Milosavljević, M., Sajavaara, T., Keinonen, J.,& Traverse, A.. (2003). Ion beam mixing in Fe/Si and Ta/Si bilayers: Possible effects of ion charges. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 205, 741-745. https://doi.org/10.1016/S0168-583X(03)00578-0
Dhar S, Schaaf P, Lieb K, Bibić NM, Milosavljević M, Sajavaara T, Keinonen J, Traverse A. Ion beam mixing in Fe/Si and Ta/Si bilayers: Possible effects of ion charges. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2003;205:741-745. doi:10.1016/S0168-583X(03)00578-0 .
Dhar, S, Schaaf, P, Lieb, KP, Bibić, Nataša M., Milosavljević, Momir, Sajavaara, T, Keinonen, J, Traverse, A, "Ion beam mixing in Fe/Si and Ta/Si bilayers: Possible effects of ion charges" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 205 (2003):741-745, https://doi.org/10.1016/S0168-583X(03)00578-0 . .