TY  - JOUR
AU  - Berhanuddin, D. D.
AU  - Lourenco, M. A.
AU  - Jeynes, C.
AU  - Milosavljević, Momir
AU  - Gwilliam, R. M.
AU  - Homewood, Kevin P.
PY  - 2012
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5185
AB  - We investigate a new approach for efficient generation of the lasing G-centre (carbon substitutional-silicon self-interstitial complex) which crucially is fully compatible with standard silicon ultra-large-scale integration technology. Silicon wafers were implanted with carbon and irradiated with high energy protons to produce self-interstitials that are crucial in the formation of the G-centre. Rutherford backscattering spectrometry (RBS) and transmission electron microscopy were used to study the structure of the post-implanted silicon samples and to investigate the behaviour of the self-interstitials and damage introduced by the carbon and proton implantation. The effect of substrate pre-amorphisation on the G-centre luminescence intensity and formation properties was also investigated by implanting Ge prior to the carbon and proton irradiation. Photoluminescence measurements and RBS results show a significantly higher G-centre peak intensity and silicon yield, respectively, in samples without pre-amorphisation. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4766390]
T2  - Journal of Applied Physics
T1  - Structural analysis of silicon co-implanted with carbon and high energy proton for the formation of the lasing G-centre
VL  - 112
IS  - 10
DO  - 10.1063/1.4766390
ER  - 

@article{
author = "Berhanuddin, D. D. and Lourenco, M. A. and Jeynes, C. and Milosavljević, Momir and Gwilliam, R. M. and Homewood, Kevin P.",
year = "2012",
abstract = "We investigate a new approach for efficient generation of the lasing G-centre (carbon substitutional-silicon self-interstitial complex) which crucially is fully compatible with standard silicon ultra-large-scale integration technology. Silicon wafers were implanted with carbon and irradiated with high energy protons to produce self-interstitials that are crucial in the formation of the G-centre. Rutherford backscattering spectrometry (RBS) and transmission electron microscopy were used to study the structure of the post-implanted silicon samples and to investigate the behaviour of the self-interstitials and damage introduced by the carbon and proton implantation. The effect of substrate pre-amorphisation on the G-centre luminescence intensity and formation properties was also investigated by implanting Ge prior to the carbon and proton irradiation. Photoluminescence measurements and RBS results show a significantly higher G-centre peak intensity and silicon yield, respectively, in samples without pre-amorphisation. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4766390]",
journal = "Journal of Applied Physics",
title = "Structural analysis of silicon co-implanted with carbon and high energy proton for the formation of the lasing G-centre",
volume = "112",
number = "10",
doi = "10.1063/1.4766390"
}

Berhanuddin, D. D., Lourenco, M. A., Jeynes, C., Milosavljević, M., Gwilliam, R. M.,& Homewood, K. P.. (2012). Structural analysis of silicon co-implanted with carbon and high energy proton for the formation of the lasing G-centre. in Journal of Applied Physics, 112(10).
https://doi.org/10.1063/1.4766390

Berhanuddin DD, Lourenco MA, Jeynes C, Milosavljević M, Gwilliam RM, Homewood KP. Structural analysis of silicon co-implanted with carbon and high energy proton for the formation of the lasing G-centre. in Journal of Applied Physics. 2012;112(10).
doi:10.1063/1.4766390 .

Berhanuddin, D. D., Lourenco, M. A., Jeynes, C., Milosavljević, Momir, Gwilliam, R. M., Homewood, Kevin P., "Structural analysis of silicon co-implanted with carbon and high energy proton for the formation of the lasing G-centre" in Journal of Applied Physics, 112, no. 10 (2012),
https://doi.org/10.1063/1.4766390 . .

TY  - JOUR
AU  - Milosavljević, Momir
AU  - Lourenco, M. A.
AU  - Gwilliam, R. M.
AU  - Homewood, Kevin P.
PY  - 2011
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/4454
AB  - Microstructural and electroluminescence measurements are carried out on boron implanted dislocation engineered silicon light emitting diodes (LEDs) co-implanted with the rare earth thulium to provide wavelength tuning in the infra-red. Silicon LEDs operating in the range from 1.1-1.35 mu m are fabricated by co-implantation of boron and thulium into n-type Si (100) wafers and subsequently rapid thermally annealed to activate the implants and to engineer the dislocation loop array that is crucial in allowing light emission. Ohmic contacts are applied to the p and n regions to form conventional p-n junction LEDs. Electroluminescence is obtained under normal forward biasing of the devices. The influence of implantation sequence (B or Tm first), ion dose, and the post-implantation annealing on the microstructure and electroluminescence from the devices is studied. A clear role of the heavy-ion Tm co-implant in significantly modifying the boron induced dislocation loop array distribution is demonstrated. We also identify the development of dislocation loops under thermal spikes upon heavy ion (Tm) implantation into Si. The results contribute to a better understanding of the basic processes involved in fabrication and functioning of co-implanted devices, toward achieving higher light emission efficiency. VC 2011 American Institute of Physics. [doi:10.1063/1.3614036]
T2  - Journal of Applied Physics
T1  - Role of heavy ion co-implantation and thermal spikes on the development of dislocation loops in nanoengineered silicon light emitting diodes
VL  - 110
IS  - 3
DO  - 10.1063/1.3614036
ER  - 

@article{
author = "Milosavljević, Momir and Lourenco, M. A. and Gwilliam, R. M. and Homewood, Kevin P.",
year = "2011",
abstract = "Microstructural and electroluminescence measurements are carried out on boron implanted dislocation engineered silicon light emitting diodes (LEDs) co-implanted with the rare earth thulium to provide wavelength tuning in the infra-red. Silicon LEDs operating in the range from 1.1-1.35 mu m are fabricated by co-implantation of boron and thulium into n-type Si (100) wafers and subsequently rapid thermally annealed to activate the implants and to engineer the dislocation loop array that is crucial in allowing light emission. Ohmic contacts are applied to the p and n regions to form conventional p-n junction LEDs. Electroluminescence is obtained under normal forward biasing of the devices. The influence of implantation sequence (B or Tm first), ion dose, and the post-implantation annealing on the microstructure and electroluminescence from the devices is studied. A clear role of the heavy-ion Tm co-implant in significantly modifying the boron induced dislocation loop array distribution is demonstrated. We also identify the development of dislocation loops under thermal spikes upon heavy ion (Tm) implantation into Si. The results contribute to a better understanding of the basic processes involved in fabrication and functioning of co-implanted devices, toward achieving higher light emission efficiency. VC 2011 American Institute of Physics. [doi:10.1063/1.3614036]",
journal = "Journal of Applied Physics",
title = "Role of heavy ion co-implantation and thermal spikes on the development of dislocation loops in nanoengineered silicon light emitting diodes",
volume = "110",
number = "3",
doi = "10.1063/1.3614036"
}

Milosavljević, M., Lourenco, M. A., Gwilliam, R. M.,& Homewood, K. P.. (2011). Role of heavy ion co-implantation and thermal spikes on the development of dislocation loops in nanoengineered silicon light emitting diodes. in Journal of Applied Physics, 110(3).
https://doi.org/10.1063/1.3614036

Milosavljević M, Lourenco MA, Gwilliam RM, Homewood KP. Role of heavy ion co-implantation and thermal spikes on the development of dislocation loops in nanoengineered silicon light emitting diodes. in Journal of Applied Physics. 2011;110(3).
doi:10.1063/1.3614036 .

Milosavljević, Momir, Lourenco, M. A., Gwilliam, R. M., Homewood, Kevin P., "Role of heavy ion co-implantation and thermal spikes on the development of dislocation loops in nanoengineered silicon light emitting diodes" in Journal of Applied Physics, 110, no. 3 (2011),
https://doi.org/10.1063/1.3614036 . .

TY  - JOUR
AU  - Milosavljević, Momir
AU  - Lourenco, M. A.
AU  - Shao, G.
AU  - Gwilliam, R. M.
AU  - Homewood, Kevin P.
PY  - 2008
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6766
AB  - We have studied the influence of the ion species, ion energy, fluence, irradiation temperature and post-implantation annealing on the formation of shallow dislocation loops in silicon, for fabrication of silicon light emitting diodes. The substrates used were (100) Si, implanted with 20-80 keV boron at room temperature and 75-175 keV silicon at 100 and 200 degrees C. The implanted fluences were from 5 x 10(14) to 1 x 10(15) ions/cm(2). After irradiation the samples were processed for 15 s to 20 min at 950 degrees C by rapid thermal annealing. Structural analysis of the samples was done by transmission electron microscopy and Rutherford backscattering spectrometry. In all irradiations the silicon substrates were not amorphized, and that resulted in the formation of extrinsic perfect and faulted dislocation loops with Burgers vectors a/2 LT 110 GT and a/3 LT 111 GT , respectively, sitting in {111} habit planes. It was demonstrated that by varying the ion implantation parameters and post-irradiation annealing, it is possible to form various shapes, concentration and distribution of dislocation loops in silicon. (C) 2008 Elsevier B.V. All rights reserved.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Formation of dislocation loops in silicon by ion irradiation for silicon light emitting diodes
VL  - 266
IS  - 10
SP  - 2470
EP  - 2474
DO  - 10.1016/j.nimb.2008.03.021
ER  - 

@article{
author = "Milosavljević, Momir and Lourenco, M. A. and Shao, G. and Gwilliam, R. M. and Homewood, Kevin P.",
year = "2008",
abstract = "We have studied the influence of the ion species, ion energy, fluence, irradiation temperature and post-implantation annealing on the formation of shallow dislocation loops in silicon, for fabrication of silicon light emitting diodes. The substrates used were (100) Si, implanted with 20-80 keV boron at room temperature and 75-175 keV silicon at 100 and 200 degrees C. The implanted fluences were from 5 x 10(14) to 1 x 10(15) ions/cm(2). After irradiation the samples were processed for 15 s to 20 min at 950 degrees C by rapid thermal annealing. Structural analysis of the samples was done by transmission electron microscopy and Rutherford backscattering spectrometry. In all irradiations the silicon substrates were not amorphized, and that resulted in the formation of extrinsic perfect and faulted dislocation loops with Burgers vectors a/2 LT 110 GT and a/3 LT 111 GT , respectively, sitting in {111} habit planes. It was demonstrated that by varying the ion implantation parameters and post-irradiation annealing, it is possible to form various shapes, concentration and distribution of dislocation loops in silicon. (C) 2008 Elsevier B.V. All rights reserved.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Formation of dislocation loops in silicon by ion irradiation for silicon light emitting diodes",
volume = "266",
number = "10",
pages = "2470-2474",
doi = "10.1016/j.nimb.2008.03.021"
}

Milosavljević, M., Lourenco, M. A., Shao, G., Gwilliam, R. M.,& Homewood, K. P.. (2008). Formation of dislocation loops in silicon by ion irradiation for silicon light emitting diodes. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 266(10), 2470-2474.
https://doi.org/10.1016/j.nimb.2008.03.021

Milosavljević M, Lourenco MA, Shao G, Gwilliam RM, Homewood KP. Formation of dislocation loops in silicon by ion irradiation for silicon light emitting diodes. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2008;266(10):2470-2474.
doi:10.1016/j.nimb.2008.03.021 .

Milosavljević, Momir, Lourenco, M. A., Shao, G., Gwilliam, R. M., Homewood, Kevin P., "Formation of dislocation loops in silicon by ion irradiation for silicon light emitting diodes" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 266, no. 10 (2008):2470-2474,
https://doi.org/10.1016/j.nimb.2008.03.021 . .

TY  - JOUR
AU  - Wong, L.
AU  - Milosavljević, Momir
AU  - Lourenco, M. A.
AU  - Shao, G.
AU  - Valizadeh, R.
AU  - Colligon, J. S.
AU  - Homewood, Kevin P.
PY  - 2008
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/3392
AB  - We report here on the synthesis, optical and structural analysis of amorphous and polycrystalline FeSi(2) fabricated by co-sputter deposition. For comparisons, a range of deposition temperatures from room temperature up to 700 degrees C and post-anneals between 300 and 700 degrees C were performed. Optical absorption measurements were taken on all samples and results reveal that the bandgap remains direct in nature ranging from 0.897 to 0.949 eV. It was found that for amorphous thin films, annealing at low temperatures below 500 degrees C had little effect on the optical properties. The bandgap value and absorption coefficient only significantly increased upon annealing above 500 degrees C. This was found to be in good agreement with the transformation of the silicide from its amorphous phase to its crystalline beta-phase. In comparison, the deposition temperature was seen to affect the crystallinity of the as-deposited thin films and to vary both the optical and structural properties of the layers significantly. An increase in the deposition temperature not only decreased the bandgap energies but also significantly increased the photo-absorption by an order of magnitude.
T2  - Semiconductor Science and Technology
T1  - Annealing and deposition temperature dependence of the bandgap of amorphous FeSi(2) fabricated by co-sputter deposition
VL  - 23
IS  - 3
DO  - 10.1088/0268-1242/23/3/035007
ER  - 

@article{
author = "Wong, L. and Milosavljević, Momir and Lourenco, M. A. and Shao, G. and Valizadeh, R. and Colligon, J. S. and Homewood, Kevin P.",
year = "2008",
abstract = "We report here on the synthesis, optical and structural analysis of amorphous and polycrystalline FeSi(2) fabricated by co-sputter deposition. For comparisons, a range of deposition temperatures from room temperature up to 700 degrees C and post-anneals between 300 and 700 degrees C were performed. Optical absorption measurements were taken on all samples and results reveal that the bandgap remains direct in nature ranging from 0.897 to 0.949 eV. It was found that for amorphous thin films, annealing at low temperatures below 500 degrees C had little effect on the optical properties. The bandgap value and absorption coefficient only significantly increased upon annealing above 500 degrees C. This was found to be in good agreement with the transformation of the silicide from its amorphous phase to its crystalline beta-phase. In comparison, the deposition temperature was seen to affect the crystallinity of the as-deposited thin films and to vary both the optical and structural properties of the layers significantly. An increase in the deposition temperature not only decreased the bandgap energies but also significantly increased the photo-absorption by an order of magnitude.",
journal = "Semiconductor Science and Technology",
title = "Annealing and deposition temperature dependence of the bandgap of amorphous FeSi(2) fabricated by co-sputter deposition",
volume = "23",
number = "3",
doi = "10.1088/0268-1242/23/3/035007"
}

Wong, L., Milosavljević, M., Lourenco, M. A., Shao, G., Valizadeh, R., Colligon, J. S.,& Homewood, K. P.. (2008). Annealing and deposition temperature dependence of the bandgap of amorphous FeSi(2) fabricated by co-sputter deposition. in Semiconductor Science and Technology, 23(3).
https://doi.org/10.1088/0268-1242/23/3/035007

Wong L, Milosavljević M, Lourenco MA, Shao G, Valizadeh R, Colligon JS, Homewood KP. Annealing and deposition temperature dependence of the bandgap of amorphous FeSi(2) fabricated by co-sputter deposition. in Semiconductor Science and Technology. 2008;23(3).
doi:10.1088/0268-1242/23/3/035007 .

Wong, L., Milosavljević, Momir, Lourenco, M. A., Shao, G., Valizadeh, R., Colligon, J. S., Homewood, Kevin P., "Annealing and deposition temperature dependence of the bandgap of amorphous FeSi(2) fabricated by co-sputter deposition" in Semiconductor Science and Technology, 23, no. 3 (2008),
https://doi.org/10.1088/0268-1242/23/3/035007 . .