TY  - JOUR
AU  - Shao, G.
AU  - Gao, Y.
AU  - Xia, X. H.
AU  - Milosavljević, Momir
PY  - 2011
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/4680
AB  - Silicide-based photonic materials have attracted a great deal of research interest due to their compatibility with the well-developed silicon technology. Extensive efforts have been made for the synthesis and characterisation of these materials. This paper covers some aspects of the microstructural and crystallographic characteristics of ion beam synthesised silicides such as the semiconducting iron and ruthenium silicides, using transmission electron microscopy. A previously predicted new orientation relationship has been found to exist between the Si substrate and ion beam synthesised beta FeSi2 nanocrystals, which are free of 90 degrees rotational order domain boundaries. (C) 2011 Elsevier B. V. All rights reserved.
T2  - Thin Solid Films
T1  - Crystallographic characteristics and fine structures of semiconducting transition metal silicides
VL  - 519
IS  - 24
SP  - 8446
EP  - 8450
DO  - 10.1016/j.tsf.2011.05.036
ER  - 

@article{
author = "Shao, G. and Gao, Y. and Xia, X. H. and Milosavljević, Momir",
year = "2011",
abstract = "Silicide-based photonic materials have attracted a great deal of research interest due to their compatibility with the well-developed silicon technology. Extensive efforts have been made for the synthesis and characterisation of these materials. This paper covers some aspects of the microstructural and crystallographic characteristics of ion beam synthesised silicides such as the semiconducting iron and ruthenium silicides, using transmission electron microscopy. A previously predicted new orientation relationship has been found to exist between the Si substrate and ion beam synthesised beta FeSi2 nanocrystals, which are free of 90 degrees rotational order domain boundaries. (C) 2011 Elsevier B. V. All rights reserved.",
journal = "Thin Solid Films",
title = "Crystallographic characteristics and fine structures of semiconducting transition metal silicides",
volume = "519",
number = "24",
pages = "8446-8450",
doi = "10.1016/j.tsf.2011.05.036"
}

Shao, G., Gao, Y., Xia, X. H.,& Milosavljević, M.. (2011). Crystallographic characteristics and fine structures of semiconducting transition metal silicides. in Thin Solid Films, 519(24), 8446-8450.
https://doi.org/10.1016/j.tsf.2011.05.036

Shao G, Gao Y, Xia XH, Milosavljević M. Crystallographic characteristics and fine structures of semiconducting transition metal silicides. in Thin Solid Films. 2011;519(24):8446-8450.
doi:10.1016/j.tsf.2011.05.036 .

Shao, G., Gao, Y., Xia, X. H., Milosavljević, Momir, "Crystallographic characteristics and fine structures of semiconducting transition metal silicides" in Thin Solid Films, 519, no. 24 (2011):8446-8450,
https://doi.org/10.1016/j.tsf.2011.05.036 . .

TY  - JOUR
AU  - Milosavljević, Momir
AU  - Wong, Lewis
AU  - Lourenco, Manon
AU  - Valizadeh, Reza
AU  - Colligon, John
AU  - Shao, Guosheng
AU  - Homewood, Kevin P.
PY  - 2010
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/4097
AB  - Iron-disilicide films were sputter deposited on Si(100) wafers to 300-400 nm, at substrate temperatures ranging from room temperature to 700 degrees C As-deposited films were amorphous at deposition temperatures up to 200 degrees C, and crystalline beta-FeSi2 at 300-700 degrees C Amorphous films were heat-treated after deposition at 300-700 degrees C They remained amorphous up to 400 degrees C, and transformed to crystalline beta-FeSi2 at 500-700 degrees C Optical absorption measurements showed that the band gap of all films is direct in nature, ranging from 0 88 to 0 93 eV The deposition temperature was seen to affect the crystallinity of the as-deposited films and to vary their optical properties significantly The photoabsorption coefficient, measured at 1 eV, increased from 5 6 x 10(4) cm(-1) for amorphous films to 1.2 x 10(5) cm(-1) for the samples deposited at 700 degrees C The films crystallized by heat-treatment had a markedly different and irregular structure, resulting in their lower optical absorption (C) 2010 The Japan Society of Applied Physics
T2  - Japanese Journal of Applied Physics
T1  - Correlation of Structural and Optical Properties of Sputtered FeSi2 Thin Films
VL  - 49
IS  - 8
DO  - 10.1143/JJAP.49.081401
ER  - 

@article{
author = "Milosavljević, Momir and Wong, Lewis and Lourenco, Manon and Valizadeh, Reza and Colligon, John and Shao, Guosheng and Homewood, Kevin P.",
year = "2010",
abstract = "Iron-disilicide films were sputter deposited on Si(100) wafers to 300-400 nm, at substrate temperatures ranging from room temperature to 700 degrees C As-deposited films were amorphous at deposition temperatures up to 200 degrees C, and crystalline beta-FeSi2 at 300-700 degrees C Amorphous films were heat-treated after deposition at 300-700 degrees C They remained amorphous up to 400 degrees C, and transformed to crystalline beta-FeSi2 at 500-700 degrees C Optical absorption measurements showed that the band gap of all films is direct in nature, ranging from 0 88 to 0 93 eV The deposition temperature was seen to affect the crystallinity of the as-deposited films and to vary their optical properties significantly The photoabsorption coefficient, measured at 1 eV, increased from 5 6 x 10(4) cm(-1) for amorphous films to 1.2 x 10(5) cm(-1) for the samples deposited at 700 degrees C The films crystallized by heat-treatment had a markedly different and irregular structure, resulting in their lower optical absorption (C) 2010 The Japan Society of Applied Physics",
journal = "Japanese Journal of Applied Physics",
title = "Correlation of Structural and Optical Properties of Sputtered FeSi2 Thin Films",
volume = "49",
number = "8",
doi = "10.1143/JJAP.49.081401"
}

Milosavljević, M., Wong, L., Lourenco, M., Valizadeh, R., Colligon, J., Shao, G.,& Homewood, K. P.. (2010). Correlation of Structural and Optical Properties of Sputtered FeSi2 Thin Films. in Japanese Journal of Applied Physics, 49(8).
https://doi.org/10.1143/JJAP.49.081401

Milosavljević M, Wong L, Lourenco M, Valizadeh R, Colligon J, Shao G, Homewood KP. Correlation of Structural and Optical Properties of Sputtered FeSi2 Thin Films. in Japanese Journal of Applied Physics. 2010;49(8).
doi:10.1143/JJAP.49.081401 .

Milosavljević, Momir, Wong, Lewis, Lourenco, Manon, Valizadeh, Reza, Colligon, John, Shao, Guosheng, Homewood, Kevin P., "Correlation of Structural and Optical Properties of Sputtered FeSi2 Thin Films" in Japanese Journal of Applied Physics, 49, no. 8 (2010),
https://doi.org/10.1143/JJAP.49.081401 . .

TY  - JOUR
AU  - Milosavljević, Momir
AU  - Lourenco, M. A.
AU  - Shao, G.
AU  - Gwilliam, R. M.
AU  - Homewood, Kevin P.
PY  - 2008
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6766
AB  - We have studied the influence of the ion species, ion energy, fluence, irradiation temperature and post-implantation annealing on the formation of shallow dislocation loops in silicon, for fabrication of silicon light emitting diodes. The substrates used were (100) Si, implanted with 20-80 keV boron at room temperature and 75-175 keV silicon at 100 and 200 degrees C. The implanted fluences were from 5 x 10(14) to 1 x 10(15) ions/cm(2). After irradiation the samples were processed for 15 s to 20 min at 950 degrees C by rapid thermal annealing. Structural analysis of the samples was done by transmission electron microscopy and Rutherford backscattering spectrometry. In all irradiations the silicon substrates were not amorphized, and that resulted in the formation of extrinsic perfect and faulted dislocation loops with Burgers vectors a/2 LT 110 GT and a/3 LT 111 GT , respectively, sitting in {111} habit planes. It was demonstrated that by varying the ion implantation parameters and post-irradiation annealing, it is possible to form various shapes, concentration and distribution of dislocation loops in silicon. (C) 2008 Elsevier B.V. All rights reserved.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Formation of dislocation loops in silicon by ion irradiation for silicon light emitting diodes
VL  - 266
IS  - 10
SP  - 2470
EP  - 2474
DO  - 10.1016/j.nimb.2008.03.021
ER  - 

@article{
author = "Milosavljević, Momir and Lourenco, M. A. and Shao, G. and Gwilliam, R. M. and Homewood, Kevin P.",
year = "2008",
abstract = "We have studied the influence of the ion species, ion energy, fluence, irradiation temperature and post-implantation annealing on the formation of shallow dislocation loops in silicon, for fabrication of silicon light emitting diodes. The substrates used were (100) Si, implanted with 20-80 keV boron at room temperature and 75-175 keV silicon at 100 and 200 degrees C. The implanted fluences were from 5 x 10(14) to 1 x 10(15) ions/cm(2). After irradiation the samples were processed for 15 s to 20 min at 950 degrees C by rapid thermal annealing. Structural analysis of the samples was done by transmission electron microscopy and Rutherford backscattering spectrometry. In all irradiations the silicon substrates were not amorphized, and that resulted in the formation of extrinsic perfect and faulted dislocation loops with Burgers vectors a/2 LT 110 GT and a/3 LT 111 GT , respectively, sitting in {111} habit planes. It was demonstrated that by varying the ion implantation parameters and post-irradiation annealing, it is possible to form various shapes, concentration and distribution of dislocation loops in silicon. (C) 2008 Elsevier B.V. All rights reserved.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Formation of dislocation loops in silicon by ion irradiation for silicon light emitting diodes",
volume = "266",
number = "10",
pages = "2470-2474",
doi = "10.1016/j.nimb.2008.03.021"
}

Milosavljević, M., Lourenco, M. A., Shao, G., Gwilliam, R. M.,& Homewood, K. P.. (2008). Formation of dislocation loops in silicon by ion irradiation for silicon light emitting diodes. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 266(10), 2470-2474.
https://doi.org/10.1016/j.nimb.2008.03.021

Milosavljević M, Lourenco MA, Shao G, Gwilliam RM, Homewood KP. Formation of dislocation loops in silicon by ion irradiation for silicon light emitting diodes. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2008;266(10):2470-2474.
doi:10.1016/j.nimb.2008.03.021 .

Milosavljević, Momir, Lourenco, M. A., Shao, G., Gwilliam, R. M., Homewood, Kevin P., "Formation of dislocation loops in silicon by ion irradiation for silicon light emitting diodes" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 266, no. 10 (2008):2470-2474,
https://doi.org/10.1016/j.nimb.2008.03.021 . .

TY  - JOUR
AU  - Wong, L.
AU  - Milosavljević, Momir
AU  - Lourenco, M. A.
AU  - Shao, G.
AU  - Valizadeh, R.
AU  - Colligon, J. S.
AU  - Homewood, Kevin P.
PY  - 2008
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/3392
AB  - We report here on the synthesis, optical and structural analysis of amorphous and polycrystalline FeSi(2) fabricated by co-sputter deposition. For comparisons, a range of deposition temperatures from room temperature up to 700 degrees C and post-anneals between 300 and 700 degrees C were performed. Optical absorption measurements were taken on all samples and results reveal that the bandgap remains direct in nature ranging from 0.897 to 0.949 eV. It was found that for amorphous thin films, annealing at low temperatures below 500 degrees C had little effect on the optical properties. The bandgap value and absorption coefficient only significantly increased upon annealing above 500 degrees C. This was found to be in good agreement with the transformation of the silicide from its amorphous phase to its crystalline beta-phase. In comparison, the deposition temperature was seen to affect the crystallinity of the as-deposited thin films and to vary both the optical and structural properties of the layers significantly. An increase in the deposition temperature not only decreased the bandgap energies but also significantly increased the photo-absorption by an order of magnitude.
T2  - Semiconductor Science and Technology
T1  - Annealing and deposition temperature dependence of the bandgap of amorphous FeSi(2) fabricated by co-sputter deposition
VL  - 23
IS  - 3
DO  - 10.1088/0268-1242/23/3/035007
ER  - 

@article{
author = "Wong, L. and Milosavljević, Momir and Lourenco, M. A. and Shao, G. and Valizadeh, R. and Colligon, J. S. and Homewood, Kevin P.",
year = "2008",
abstract = "We report here on the synthesis, optical and structural analysis of amorphous and polycrystalline FeSi(2) fabricated by co-sputter deposition. For comparisons, a range of deposition temperatures from room temperature up to 700 degrees C and post-anneals between 300 and 700 degrees C were performed. Optical absorption measurements were taken on all samples and results reveal that the bandgap remains direct in nature ranging from 0.897 to 0.949 eV. It was found that for amorphous thin films, annealing at low temperatures below 500 degrees C had little effect on the optical properties. The bandgap value and absorption coefficient only significantly increased upon annealing above 500 degrees C. This was found to be in good agreement with the transformation of the silicide from its amorphous phase to its crystalline beta-phase. In comparison, the deposition temperature was seen to affect the crystallinity of the as-deposited thin films and to vary both the optical and structural properties of the layers significantly. An increase in the deposition temperature not only decreased the bandgap energies but also significantly increased the photo-absorption by an order of magnitude.",
journal = "Semiconductor Science and Technology",
title = "Annealing and deposition temperature dependence of the bandgap of amorphous FeSi(2) fabricated by co-sputter deposition",
volume = "23",
number = "3",
doi = "10.1088/0268-1242/23/3/035007"
}

Wong, L., Milosavljević, M., Lourenco, M. A., Shao, G., Valizadeh, R., Colligon, J. S.,& Homewood, K. P.. (2008). Annealing and deposition temperature dependence of the bandgap of amorphous FeSi(2) fabricated by co-sputter deposition. in Semiconductor Science and Technology, 23(3).
https://doi.org/10.1088/0268-1242/23/3/035007

Wong L, Milosavljević M, Lourenco MA, Shao G, Valizadeh R, Colligon JS, Homewood KP. Annealing and deposition temperature dependence of the bandgap of amorphous FeSi(2) fabricated by co-sputter deposition. in Semiconductor Science and Technology. 2008;23(3).
doi:10.1088/0268-1242/23/3/035007 .

Wong, L., Milosavljević, Momir, Lourenco, M. A., Shao, G., Valizadeh, R., Colligon, J. S., Homewood, Kevin P., "Annealing and deposition temperature dependence of the bandgap of amorphous FeSi(2) fabricated by co-sputter deposition" in Semiconductor Science and Technology, 23, no. 3 (2008),
https://doi.org/10.1088/0268-1242/23/3/035007 . .

TY  - JOUR
AU  - Milosavljević, Momir
AU  - Shao, G
AU  - Lourenco, MA
AU  - Gwilliam, RM
AU  - Homewood, Kevin P.
AU  - Edwards, SP
AU  - Valizadeh, R
AU  - Colligon, JS
PY  - 2005
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/2963
AB  - A study of the stability of amorphous FeSi2 films and their transition to a crystalline phase as a function of deposition or annealing temperature is presented. Stoichiometric FeSi2 films, 300-400 nm thick, were deposited on (100) Si substrates by co-sputtering of Fe and Si. It was found that the films grow in an amorphous form for the substrate temperature ranging from room temperature to 200 degrees C, while from 300-700 degrees C, they grow in form of a crystalline beta-FeSi2 phase. In a postdeposition 30 min heat treatments, the layers retain the amorphous structure up to 400 degrees C, transforming to the crystalline beta phase at 500-700 degrees C. The results are discussed in the frame of the existing models, and compared to those found in the literature. It is shown that in as-deposited films, the growth is controlled by surface diffusion, the crystalline layers growing in a columnar structure strongly correlated to the Si substrate. Postdeposition treatments induce a random crystallization controlled by bulk diffusion, the resulting structure not being influenced by the substrate. The results of this work contribute to a better understanding of the processes involved in a transition of amorphous FeSi2 films to a crystalline phase, and provide a basis to determine the processing parameters in potential applications of this promising semiconducting material. (c) 2005 American Institute of Physics.
T2  - Journal of Applied Physics
T1  - Transition from amorphous to crystalline beta phase in co-sputtered FeSi2 films as a function of temperature
VL  - 98
IS  - 12
DO  - 10.1063/1.2148629
ER  - 

@article{
author = "Milosavljević, Momir and Shao, G and Lourenco, MA and Gwilliam, RM and Homewood, Kevin P. and Edwards, SP and Valizadeh, R and Colligon, JS",
year = "2005",
abstract = "A study of the stability of amorphous FeSi2 films and their transition to a crystalline phase as a function of deposition or annealing temperature is presented. Stoichiometric FeSi2 films, 300-400 nm thick, were deposited on (100) Si substrates by co-sputtering of Fe and Si. It was found that the films grow in an amorphous form for the substrate temperature ranging from room temperature to 200 degrees C, while from 300-700 degrees C, they grow in form of a crystalline beta-FeSi2 phase. In a postdeposition 30 min heat treatments, the layers retain the amorphous structure up to 400 degrees C, transforming to the crystalline beta phase at 500-700 degrees C. The results are discussed in the frame of the existing models, and compared to those found in the literature. It is shown that in as-deposited films, the growth is controlled by surface diffusion, the crystalline layers growing in a columnar structure strongly correlated to the Si substrate. Postdeposition treatments induce a random crystallization controlled by bulk diffusion, the resulting structure not being influenced by the substrate. The results of this work contribute to a better understanding of the processes involved in a transition of amorphous FeSi2 films to a crystalline phase, and provide a basis to determine the processing parameters in potential applications of this promising semiconducting material. (c) 2005 American Institute of Physics.",
journal = "Journal of Applied Physics",
title = "Transition from amorphous to crystalline beta phase in co-sputtered FeSi2 films as a function of temperature",
volume = "98",
number = "12",
doi = "10.1063/1.2148629"
}

Milosavljević, M., Shao, G., Lourenco, M., Gwilliam, R., Homewood, K. P., Edwards, S., Valizadeh, R.,& Colligon, J.. (2005). Transition from amorphous to crystalline beta phase in co-sputtered FeSi2 films as a function of temperature. in Journal of Applied Physics, 98(12).
https://doi.org/10.1063/1.2148629

Milosavljević M, Shao G, Lourenco M, Gwilliam R, Homewood KP, Edwards S, Valizadeh R, Colligon J. Transition from amorphous to crystalline beta phase in co-sputtered FeSi2 films as a function of temperature. in Journal of Applied Physics. 2005;98(12).
doi:10.1063/1.2148629 .

Milosavljević, Momir, Shao, G, Lourenco, MA, Gwilliam, RM, Homewood, Kevin P., Edwards, SP, Valizadeh, R, Colligon, JS, "Transition from amorphous to crystalline beta phase in co-sputtered FeSi2 films as a function of temperature" in Journal of Applied Physics, 98, no. 12 (2005),
https://doi.org/10.1063/1.2148629 . .

TY  - JOUR
AU  - Milosavljević, Momir
AU  - Shao, G
AU  - Bibić, Nataša M.
AU  - McKinty, CN
AU  - Jeynes, C
AU  - Homewood, Kevin P.
PY  - 2002
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6329
AB  - The existence of amorphous semiconducting FeSi2, having a direct band gap of 0.88 eV. is demonstrated. It was synthesized by ion beam mixing of 50 nm Fe on Si(1 0 0) with 120 keV Ar-8 ions, at 300 degreesC. Rapid diffusion of Si to the surface is assigned to be the dominating process that results in the formation of amorphous FeSi2 phase, Other Synthesis techniques should be possible for fabrication of this material. and it Could be applied in large area electronics, (C) 2002 Published by Elsevier Science B.V.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Synthesis of amorphous FeSi2 by ion beam mixing
VL  - 188
SP  - 166
EP  - 169
DO  - 10.1016/S0168-583X(01)01068-0
ER  - 

@article{
author = "Milosavljević, Momir and Shao, G and Bibić, Nataša M. and McKinty, CN and Jeynes, C and Homewood, Kevin P.",
year = "2002",
abstract = "The existence of amorphous semiconducting FeSi2, having a direct band gap of 0.88 eV. is demonstrated. It was synthesized by ion beam mixing of 50 nm Fe on Si(1 0 0) with 120 keV Ar-8 ions, at 300 degreesC. Rapid diffusion of Si to the surface is assigned to be the dominating process that results in the formation of amorphous FeSi2 phase, Other Synthesis techniques should be possible for fabrication of this material. and it Could be applied in large area electronics, (C) 2002 Published by Elsevier Science B.V.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Synthesis of amorphous FeSi2 by ion beam mixing",
volume = "188",
pages = "166-169",
doi = "10.1016/S0168-583X(01)01068-0"
}

Milosavljević, M., Shao, G., Bibić, N. M., McKinty, C., Jeynes, C.,& Homewood, K. P.. (2002). Synthesis of amorphous FeSi2 by ion beam mixing. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 188, 166-169.
https://doi.org/10.1016/S0168-583X(01)01068-0

Milosavljević M, Shao G, Bibić NM, McKinty C, Jeynes C, Homewood KP. Synthesis of amorphous FeSi2 by ion beam mixing. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2002;188:166-169.
doi:10.1016/S0168-583X(01)01068-0 .

Milosavljević, Momir, Shao, G, Bibić, Nataša M., McKinty, CN, Jeynes, C, Homewood, Kevin P., "Synthesis of amorphous FeSi2 by ion beam mixing" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 188 (2002):166-169,
https://doi.org/10.1016/S0168-583X(01)01068-0 . .

TY  - JOUR
AU  - Milosavljević, Momir
AU  - Shao, G
AU  - Bibić, Nataša M.
AU  - McKinty, CN
AU  - Jeynes, C
AU  - Homewood, Kevin P.
PY  - 2001
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/2453
AB  - We report here the synthesis and the measurements of the microstructural and optical properties of a promising semiconductor, amorphous-iron disilicide. The material was obtained by ion-beam mixing of Fe layers on Si, with Ar8+ ions, at 300 degreesC. Optical absorption measurements indicate a semiconductor with a direct band gap of 0.88 eV. The significance of this discovery is that it demonstrates the existence of such a material. It should be possible to synthesize by other techniques and could be applied in large-area electronics. (C) 2001 American Institute of Physics.
T2  - Applied Physics Letters
T1  - Amorphous-iron disilicide: A promising semiconductor
VL  - 79
IS  - 10
SP  - 1438
EP  - 1440
DO  - 10.1063/1.1400760
ER  - 

@article{
author = "Milosavljević, Momir and Shao, G and Bibić, Nataša M. and McKinty, CN and Jeynes, C and Homewood, Kevin P.",
year = "2001",
abstract = "We report here the synthesis and the measurements of the microstructural and optical properties of a promising semiconductor, amorphous-iron disilicide. The material was obtained by ion-beam mixing of Fe layers on Si, with Ar8+ ions, at 300 degreesC. Optical absorption measurements indicate a semiconductor with a direct band gap of 0.88 eV. The significance of this discovery is that it demonstrates the existence of such a material. It should be possible to synthesize by other techniques and could be applied in large-area electronics. (C) 2001 American Institute of Physics.",
journal = "Applied Physics Letters",
title = "Amorphous-iron disilicide: A promising semiconductor",
volume = "79",
number = "10",
pages = "1438-1440",
doi = "10.1063/1.1400760"
}

Milosavljević, M., Shao, G., Bibić, N. M., McKinty, C., Jeynes, C.,& Homewood, K. P.. (2001). Amorphous-iron disilicide: A promising semiconductor. in Applied Physics Letters, 79(10), 1438-1440.
https://doi.org/10.1063/1.1400760

Milosavljević M, Shao G, Bibić NM, McKinty C, Jeynes C, Homewood KP. Amorphous-iron disilicide: A promising semiconductor. in Applied Physics Letters. 2001;79(10):1438-1440.
doi:10.1063/1.1400760 .

Milosavljević, Momir, Shao, G, Bibić, Nataša M., McKinty, CN, Jeynes, C, Homewood, Kevin P., "Amorphous-iron disilicide: A promising semiconductor" in Applied Physics Letters, 79, no. 10 (2001):1438-1440,
https://doi.org/10.1063/1.1400760 . .