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Ion-beam irradiation effects on reactively sputtered CrN layers
(Processing and Application of Ceramics, 2011)
This paper presents a study of microstructural changes induced in CrN layers by irradiation with 120 keV argon ions. The layers were deposited on (100) Si wafers, at different nitrogen partial pressures (2×10^-4, 3.5×10^-4 ...
Structural changes induced by argon ion irradiation in TiN thin films
(Processing and Application of Ceramics, 2011)
In this work, the effects of 120 keV Ar+ ion implantation on the structural properties of TiN thin films were investigated. TiN layers were deposited by d.c. reactive sputtering on Si(100) wafers at room temperature or at ...