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Investigation of deep implanted carbon and oxygen channeling profiles in [110] silicon, using d-NRA and SEM
(Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 2014)
Ion implantation is one of the most important techniques used in the silicon-based semiconductor industry. Using the ion axial channeling effect, which occurs when an ion beam is oriented along a crystallographic axis, it ...