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Synthesis of amorphous FeSi2 by ion beam mixing
(Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 2002)
The existence of amorphous semiconducting FeSi2, having a direct band gap of 0.88 eV. is demonstrated. It was synthesized by ion beam mixing of 50 nm Fe on Si(1 0 0) with 120 keV Ar-8 ions, at 300 degreesC. Rapid diffusion ...
Ion beam mixing in Fe/Si and Ta/Si bilayers: Possible effects of ion charges
(Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 2003)
Thin Fe and Ta layers of 30-45 nm thickness, deposited via magnetron sputtering on Si (100) substrates, were bombarded at room temperature with 100 kev Ar1+ or Ar8+ or with 250 keV Xe1+ or Xe19+ ions in order to test the ...
RBS/simulated annealing analysis of silicide formation in Fe/Si systems
(Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 1998)
Thin Fe films were deposited by de sputtering onto Si to thicknesses between 50 and 120 nm. This was followed by implantation of 350 keV As to doses between 5 x 10(15) and 2.5 x 10(16) cm(-2), or 300 keV Xe to doses between ...