Ion beam mixing in Fe/Si and Ta/Si bilayers: Possible effects of ion charges
Bibić, Nataša M.
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Thin Fe and Ta layers of 30-45 nm thickness, deposited via magnetron sputtering on Si (100) substrates, were bombarded at room temperature with 100 kev Ar1+ or Ar8+ or with 250 keV Xe1+ or Xe19+ ions in order to test the influence of the ion charge state on the surface sputtering and interface mixing. The samples were characterized by means of Rutherford backscattering at 0.9-3.0 MeV alpha-particle energy, time-of-flight elastic recoil detection analysis with a 53 MeV 127I(10+) beam and atomic force microscopy, No influence of the charge state on the sputtering and athermal mixing rate was observed in the case of the Ta/Si system. However, in the case of the Fe/Si system, the ion charge was observed to have an influence on the mixing rate. (C) 2003 Elsevier Science B.V. All rights reserved.
Keywords:ion beam mixing / highly-charged ion / ion irradiation / RBS / TOF-ERDA
Source:Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 2003, 205, 741-745
- 11th International Conference on the Physics of Highly Charged Ions (HCI 2002), Sep 01-06, 2002, Caen, France