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dc.creatorStanojević, Neda
dc.creatorMarkushev, Dragana K.
dc.creatorAleksić, Sanja M.
dc.creatorPantić, Dragan S.
dc.creatorGalović, Slobodanka
dc.creatorMarkushev, Dragan D.
dc.creatorOrdonez-Miranda, Jose
dc.date.accessioned2023-07-17T09:05:02Z
dc.date.available2023-07-17T09:05:02Z
dc.date.issued2023
dc.identifier.issn0021-8979
dc.identifier.urihttps://vinar.vin.bg.ac.rs/handle/123456789/11212
dc.description.abstractBased on the analogy between resistor-capacitor (RC) filters and the thermoelastic component of a photoacoustic signal, the complex thermoelastic response of an open photoacoustic cell is described as a simple linear time-invariant system of a low-pass RC filter. This description is done by finding a linear relation between the thermoelastic cut-off frequency and sample material thickness within the range of 10-1000 μm. Based on the theory of a composite piston, we run numerical simulations of the proposed method for n-type silicon, described as either a surface or volume absorber. Theoretical predictions are experimentally validated by using an open photoacoustic cell setup to record the signal of an 850-μm-thick n-type silicon wafer illuminated by a blue light source modulated with frequencies from 20 Hz to 20 kHz. The obtained experimental results confirm the linear dependence of the thermoelastic cut-off frequency on the sample thickness, and, therefore, they lay the foundation of a new method for the thermal characterization of materials. © 2023 Author(s).en
dc.language.isoen
dc.relationMinistry of Science, Technological Development, and Innovations of the Republic of Serbia [660-01-00015/69]
dc.relation.isversionofhttp://dx.doi.org/10.1063/5.0152495
dc.relation.isversionofhttps://vinar.vin.bg.ac.rs/handle/123456789/11211
dc.rightsopenAccess
dc.sourceJournal of Applied Physics
dc.subjectFrequency responseen
dc.subjectInvarianceen
dc.subjectLight sourcesen
dc.subjectLinear time-invariant systemen
dc.subjectSilicon wafersen
dc.subjectThermoelasticityen
dc.subjectTime varying control systemsen
dc.titleThermal characterization of n-type silicon based on an electro-acoustic analogyen
dc.typearticleen
dc.rights.licenseARR
dc.citation.volume133
dc.citation.issue24
dc.citation.spage245102
dc.identifier.wos001019515900011
dc.identifier.doi10.1063/5.0152495
dc.citation.rankM22
dc.description.otherThe following article has been accepted by Journal of Applied Physics. After it is published, it will be found at [https://doi.org/10.1063/5.0152495].en
dc.type.versionacceptedVersion
dc.identifier.scopus2-s2.0-85163702415
dc.identifier.fulltexthttp://vinar.vin.bg.ac.rs/bitstream/id/30463/thermal_characterization_of_n_type_PeerReviewed.pdf


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