Deutsche Forschungsgemeinschaft, Ministry of Science of the Republic of Serbia [141013]

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Deutsche Forschungsgemeinschaft, Ministry of Science of the Republic of Serbia [141013]

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Publications

Effects of the Ar ions pre-amorphization of Si substrateon interface mixing of Fe/Si bilayers

Bibić, Nataša M.; Milinović, Velimir; Milosavljević, Momir; Schrempel, F.; Šiljegović, Milorad; Lieb, K. P.

(2008)

TY  - JOUR
AU  - Bibić, Nataša M.
AU  - Milinović, Velimir
AU  - Milosavljević, Momir
AU  - Schrempel, F.
AU  - Šiljegović, Milorad
AU  - Lieb, K. P.
PY  - 2008
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/3575
AB  - Ion beam mixing of Fe/Si bilayers, induced by 100 keV (40)Arions at room temperature was investigated. Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were applied for structural characterization. The main focus of this study was on the influence of the substrate structure on interface mixing. The influence of the substrate structure is due to the two classes of irradiated bilayers, Fe thin films deposited on crystalline or pre-amorphized Si substrates. An about 76% higher efficiency of atomic transport across the pre-amorphized Fe/a-Si interface as compared to that of Fe/c-Si bilayers was observed.
T2  - Journal of Microscopy, Oxford
T1  - Effects of the Ar ions pre-amorphization of Si substrateon interface mixing of Fe/Si bilayers
VL  - 232
IS  - 3
SP  - 539
EP  - 541
DO  - 10.1111/j.1365-2818.2008.02143.x
ER  - 
@article{
author = "Bibić, Nataša M. and Milinović, Velimir and Milosavljević, Momir and Schrempel, F. and Šiljegović, Milorad and Lieb, K. P.",
year = "2008",
abstract = "Ion beam mixing of Fe/Si bilayers, induced by 100 keV (40)Arions at room temperature was investigated. Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were applied for structural characterization. The main focus of this study was on the influence of the substrate structure on interface mixing. The influence of the substrate structure is due to the two classes of irradiated bilayers, Fe thin films deposited on crystalline or pre-amorphized Si substrates. An about 76% higher efficiency of atomic transport across the pre-amorphized Fe/a-Si interface as compared to that of Fe/c-Si bilayers was observed.",
journal = "Journal of Microscopy, Oxford",
title = "Effects of the Ar ions pre-amorphization of Si substrateon interface mixing of Fe/Si bilayers",
volume = "232",
number = "3",
pages = "539-541",
doi = "10.1111/j.1365-2818.2008.02143.x"
}
Bibić, N. M., Milinović, V., Milosavljević, M., Schrempel, F., Šiljegović, M.,& Lieb, K. P.. (2008). Effects of the Ar ions pre-amorphization of Si substrateon interface mixing of Fe/Si bilayers. in Journal of Microscopy, Oxford, 232(3), 539-541.
https://doi.org/10.1111/j.1365-2818.2008.02143.x
Bibić NM, Milinović V, Milosavljević M, Schrempel F, Šiljegović M, Lieb KP. Effects of the Ar ions pre-amorphization of Si substrateon interface mixing of Fe/Si bilayers. in Journal of Microscopy, Oxford. 2008;232(3):539-541.
doi:10.1111/j.1365-2818.2008.02143.x .
Bibić, Nataša M., Milinović, Velimir, Milosavljević, Momir, Schrempel, F., Šiljegović, Milorad, Lieb, K. P., "Effects of the Ar ions pre-amorphization of Si substrateon interface mixing of Fe/Si bilayers" in Journal of Microscopy, Oxford, 232, no. 3 (2008):539-541,
https://doi.org/10.1111/j.1365-2818.2008.02143.x . .
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