TY  - JOUR
AU  - Atić, Aleksandar
AU  - Wang, Xizhe
AU  - Vuković, Nikola
AU  - Stanojević, Novak
AU  - Demić, Aleksandar
AU  - Indjin, Dragan
AU  - Radovanović, Jelena
PY  - 2024
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12868
AB  - ZnO-based heterostructures are up-and-coming candidates for terahertz (THz) optoelectronic devices, largely owing to their innate material attributes. The significant ZnO LO-phonon energy plays a pivotal role in mitigating thermally induced LO-phonon scattering, potentially significantly elevating the temperature performance of quantum cascade lasers (QCLs). In this work, we calculate the electronic structure and absorption of ZnO/ZnMgO multiple semiconductor quantum wells (MQWs) and the current density–voltage characteristics of nonpolar m-plane ZnO/ZnMgO double-barrier resonant tunnelling diodes (RTDs). Both MQWs and RTDs are considered here as two building blocks of a QCL. We show how the doping, Mg percentage and layer thickness affect the absorption of MQWs at room temperature. We confirm that in the high doping concentrations regime, a full quantum treatment that includes the depolarisation shift effect must be considered, as it shifts mid-infrared absorption peak energy for several tens of meV. Furthermore, we also focus on the performance of RTDs for various parameter changes and conclude that, to maximise the peak-to-valley ratio (PVR), the optimal doping density of the analysed ZnO/Zn88Mg12O double-barrier RTD should be approximately 1018 cm−3, whilst the optimal barrier thickness should be 1.3 nm, with a Mg mole fraction of ~9%.
T2  - Materials
T1  - Resonant Tunnelling and Intersubband Optical Properties of ZnO/ZnMgO Semiconductor Heterostructures: Impact of Doping and Layer Structure Variation
VL  - 17
IS  - 4
SP  - 927
DO  - 10.3390/ma17040927
ER  - 

@article{
author = "Atić, Aleksandar and Wang, Xizhe and Vuković, Nikola and Stanojević, Novak and Demić, Aleksandar and Indjin, Dragan and Radovanović, Jelena",
year = "2024",
abstract = "ZnO-based heterostructures are up-and-coming candidates for terahertz (THz) optoelectronic devices, largely owing to their innate material attributes. The significant ZnO LO-phonon energy plays a pivotal role in mitigating thermally induced LO-phonon scattering, potentially significantly elevating the temperature performance of quantum cascade lasers (QCLs). In this work, we calculate the electronic structure and absorption of ZnO/ZnMgO multiple semiconductor quantum wells (MQWs) and the current density–voltage characteristics of nonpolar m-plane ZnO/ZnMgO double-barrier resonant tunnelling diodes (RTDs). Both MQWs and RTDs are considered here as two building blocks of a QCL. We show how the doping, Mg percentage and layer thickness affect the absorption of MQWs at room temperature. We confirm that in the high doping concentrations regime, a full quantum treatment that includes the depolarisation shift effect must be considered, as it shifts mid-infrared absorption peak energy for several tens of meV. Furthermore, we also focus on the performance of RTDs for various parameter changes and conclude that, to maximise the peak-to-valley ratio (PVR), the optimal doping density of the analysed ZnO/Zn88Mg12O double-barrier RTD should be approximately 1018 cm−3, whilst the optimal barrier thickness should be 1.3 nm, with a Mg mole fraction of ~9%.",
journal = "Materials",
title = "Resonant Tunnelling and Intersubband Optical Properties of ZnO/ZnMgO Semiconductor Heterostructures: Impact of Doping and Layer Structure Variation",
volume = "17",
number = "4",
pages = "927",
doi = "10.3390/ma17040927"
}

Atić, A., Wang, X., Vuković, N., Stanojević, N., Demić, A., Indjin, D.,& Radovanović, J.. (2024). Resonant Tunnelling and Intersubband Optical Properties of ZnO/ZnMgO Semiconductor Heterostructures: Impact of Doping and Layer Structure Variation. in Materials, 17(4), 927.
https://doi.org/10.3390/ma17040927

Atić A, Wang X, Vuković N, Stanojević N, Demić A, Indjin D, Radovanović J. Resonant Tunnelling and Intersubband Optical Properties of ZnO/ZnMgO Semiconductor Heterostructures: Impact of Doping and Layer Structure Variation. in Materials. 2024;17(4):927.
doi:10.3390/ma17040927 .

Atić, Aleksandar, Wang, Xizhe, Vuković, Nikola, Stanojević, Novak, Demić, Aleksandar, Indjin, Dragan, Radovanović, Jelena, "Resonant Tunnelling and Intersubband Optical Properties of ZnO/ZnMgO Semiconductor Heterostructures: Impact of Doping and Layer Structure Variation" in Materials, 17, no. 4 (2024):927,
https://doi.org/10.3390/ma17040927 . .