Resonant Tunnelling and Intersubband Optical Properties of ZnO/ZnMgO Semiconductor Heterostructures: Impact of Doping and Layer Structure Variation
Аутори
Atić, AleksandarWang, Xizhe
Vuković, Nikola
Stanojević, Novak
Demić, Aleksandar
Indjin, Dragan
Radovanović, Jelena
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
ZnO-based heterostructures are up-and-coming candidates for terahertz (THz) optoelectronic devices, largely owing to their innate material attributes. The significant ZnO LO-phonon energy plays a pivotal role in mitigating thermally induced LO-phonon scattering, potentially significantly elevating the temperature performance of quantum cascade lasers (QCLs). In this work, we calculate the electronic structure and absorption of ZnO/ZnMgO multiple semiconductor quantum wells (MQWs) and the current density–voltage characteristics of nonpolar m-plane ZnO/ZnMgO double-barrier resonant tunnelling diodes (RTDs). Both MQWs and RTDs are considered here as two building blocks of a QCL. We show how the doping, Mg percentage and layer thickness affect the absorption of MQWs at room temperature. We confirm that in the high doping concentrations regime, a full quantum treatment that includes the depolarisation shift effect must be considered, as it shifts mid-infrared absorption peak energy for seve...ral tens of meV. Furthermore, we also focus on the performance of RTDs for various parameter changes and conclude that, to maximise the peak-to-valley ratio (PVR), the optimal doping density of the analysed ZnO/Zn88Mg12O double-barrier RTD should be approximately 1018 cm−3, whilst the optimal barrier thickness should be 1.3 nm, with a Mg mole fraction of ~9%.
Кључне речи:
wide-bandgap oxide semiconductors / resonant tunnelling / intersubband transitions / depolarisation shiftИзвор:
Materials, 2024, 17, 4, 927-Финансирање / пројекти:
- DEMETRA - Development of High-Performance Mid-Ir/Thz Quantum Cascade Lasers for Advanced Applications (RS-ScienceFundRS-Dijaspora-6436915)
- COST Action [CA21159 PhoBioS]
- Engineering and Physical Sciences Research Council (EPSRC) UK [EP/T034246/1]
- Министарство науке, технолошког развоја и иновација Републике Србије, институционално финансирање - 200017 (Универзитет у Београду, Институт за нуклеарне науке Винча, Београд-Винча) (RS-MESTD-inst-2020-200017)
- Министарство науке, технолошког развоја и иновација Републике Србије, институционално финансирање - 200103 (Универзитет у Београду, Електротехнички факултет) (RS-MESTD-inst-2020-200103)
- Science Fund of the Republic of Serbia [10504, “Ultra-Short Pulsations from TERAhertz Quantum Cascade Laser Using Passive Mode-LOCKing with Graphene Saturable Absorber-TERALOCK”]
- Multilateral scientific and technological cooperation in the Danube Region 2020–2021 [“Multi-Scale Modeling of Terahertz Quantum Cascade Laser Active Regions”]
Колекције
Институција/група
VinčaTY - JOUR AU - Atić, Aleksandar AU - Wang, Xizhe AU - Vuković, Nikola AU - Stanojević, Novak AU - Demić, Aleksandar AU - Indjin, Dragan AU - Radovanović, Jelena PY - 2024 UR - https://vinar.vin.bg.ac.rs/handle/123456789/12868 AB - ZnO-based heterostructures are up-and-coming candidates for terahertz (THz) optoelectronic devices, largely owing to their innate material attributes. The significant ZnO LO-phonon energy plays a pivotal role in mitigating thermally induced LO-phonon scattering, potentially significantly elevating the temperature performance of quantum cascade lasers (QCLs). In this work, we calculate the electronic structure and absorption of ZnO/ZnMgO multiple semiconductor quantum wells (MQWs) and the current density–voltage characteristics of nonpolar m-plane ZnO/ZnMgO double-barrier resonant tunnelling diodes (RTDs). Both MQWs and RTDs are considered here as two building blocks of a QCL. We show how the doping, Mg percentage and layer thickness affect the absorption of MQWs at room temperature. We confirm that in the high doping concentrations regime, a full quantum treatment that includes the depolarisation shift effect must be considered, as it shifts mid-infrared absorption peak energy for several tens of meV. Furthermore, we also focus on the performance of RTDs for various parameter changes and conclude that, to maximise the peak-to-valley ratio (PVR), the optimal doping density of the analysed ZnO/Zn88Mg12O double-barrier RTD should be approximately 1018 cm−3, whilst the optimal barrier thickness should be 1.3 nm, with a Mg mole fraction of ~9%. T2 - Materials T1 - Resonant Tunnelling and Intersubband Optical Properties of ZnO/ZnMgO Semiconductor Heterostructures: Impact of Doping and Layer Structure Variation VL - 17 IS - 4 SP - 927 DO - 10.3390/ma17040927 ER -
@article{ author = "Atić, Aleksandar and Wang, Xizhe and Vuković, Nikola and Stanojević, Novak and Demić, Aleksandar and Indjin, Dragan and Radovanović, Jelena", year = "2024", abstract = "ZnO-based heterostructures are up-and-coming candidates for terahertz (THz) optoelectronic devices, largely owing to their innate material attributes. The significant ZnO LO-phonon energy plays a pivotal role in mitigating thermally induced LO-phonon scattering, potentially significantly elevating the temperature performance of quantum cascade lasers (QCLs). In this work, we calculate the electronic structure and absorption of ZnO/ZnMgO multiple semiconductor quantum wells (MQWs) and the current density–voltage characteristics of nonpolar m-plane ZnO/ZnMgO double-barrier resonant tunnelling diodes (RTDs). Both MQWs and RTDs are considered here as two building blocks of a QCL. We show how the doping, Mg percentage and layer thickness affect the absorption of MQWs at room temperature. We confirm that in the high doping concentrations regime, a full quantum treatment that includes the depolarisation shift effect must be considered, as it shifts mid-infrared absorption peak energy for several tens of meV. Furthermore, we also focus on the performance of RTDs for various parameter changes and conclude that, to maximise the peak-to-valley ratio (PVR), the optimal doping density of the analysed ZnO/Zn88Mg12O double-barrier RTD should be approximately 1018 cm−3, whilst the optimal barrier thickness should be 1.3 nm, with a Mg mole fraction of ~9%.", journal = "Materials", title = "Resonant Tunnelling and Intersubband Optical Properties of ZnO/ZnMgO Semiconductor Heterostructures: Impact of Doping and Layer Structure Variation", volume = "17", number = "4", pages = "927", doi = "10.3390/ma17040927" }
Atić, A., Wang, X., Vuković, N., Stanojević, N., Demić, A., Indjin, D.,& Radovanović, J.. (2024). Resonant Tunnelling and Intersubband Optical Properties of ZnO/ZnMgO Semiconductor Heterostructures: Impact of Doping and Layer Structure Variation. in Materials, 17(4), 927. https://doi.org/10.3390/ma17040927
Atić A, Wang X, Vuković N, Stanojević N, Demić A, Indjin D, Radovanović J. Resonant Tunnelling and Intersubband Optical Properties of ZnO/ZnMgO Semiconductor Heterostructures: Impact of Doping and Layer Structure Variation. in Materials. 2024;17(4):927. doi:10.3390/ma17040927 .
Atić, Aleksandar, Wang, Xizhe, Vuković, Nikola, Stanojević, Novak, Demić, Aleksandar, Indjin, Dragan, Radovanović, Jelena, "Resonant Tunnelling and Intersubband Optical Properties of ZnO/ZnMgO Semiconductor Heterostructures: Impact of Doping and Layer Structure Variation" in Materials, 17, no. 4 (2024):927, https://doi.org/10.3390/ma17040927 . .