TY  - CONF
AU  - Veljković, Sandra
AU  - Mitrović, Nikola
AU  - Đorić-Veljković, Snežana
AU  - Davidović, Vojkan
AU  - Živanović, E.
AU  - Stanković, Srboljub
AU  - Anđelković, M.
AU  - Ristić, G.
AU  - Paskleva, A.
AU  - Spassov, D.
AU  - Danković, Danijel
AU  - Manić, I.
PY  - 2023
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12120
AB  - This paper investigates the impact of negative bias temperature stress on irradiated commercial p-channel power VDMOS transistors, particularly focusing on gate oxide charge and interface trap alterations and their contribution to threshold voltage shifts. The study addresses the critical issue of transistor reliability, as threshold voltage shifts can significantly affect device performance, especially in elevated temperature and negative gate oxide field conditions. Additionally, the research explores the effects of irradiation on VDMOS power transistors, emphasizing the importance of understanding the associated electrical parameter changes. The paper presents a comprehensive analysis of static and pulsed NBT stressing, with a specific focus on novel stress signals encountered in practical applications. The experimental procedure involves irradiation and NBT stress, and the results reveal insights into the contributions of gate oxide charge and interface traps to threshold voltage shifts. The findings shed light on the reliability of electronic equipment incorporating p-channel power VDMOS transistors under various stress conditions, offering valuable insights for device design and operation.
PB  - IEEE : Institute of Electrical and Electronics Engineers
C3  - MIEL : 33rd International Conference on Microelectronics : Proceedings book
T1  - Effects in Commercial p-Channel Power VDMOS Transistors Initiated by Negative Bias Temperature Stress and Irradiation
SP  - 277
EP  - 280
DO  - 10.1109/MIEL58498.2023.10315932
ER  - 

@conference{
author = "Veljković, Sandra and Mitrović, Nikola and Đorić-Veljković, Snežana and Davidović, Vojkan and Živanović, E. and Stanković, Srboljub and Anđelković, M. and Ristić, G. and Paskleva, A. and Spassov, D. and Danković, Danijel and Manić, I.",
year = "2023",
abstract = "This paper investigates the impact of negative bias temperature stress on irradiated commercial p-channel power VDMOS transistors, particularly focusing on gate oxide charge and interface trap alterations and their contribution to threshold voltage shifts. The study addresses the critical issue of transistor reliability, as threshold voltage shifts can significantly affect device performance, especially in elevated temperature and negative gate oxide field conditions. Additionally, the research explores the effects of irradiation on VDMOS power transistors, emphasizing the importance of understanding the associated electrical parameter changes. The paper presents a comprehensive analysis of static and pulsed NBT stressing, with a specific focus on novel stress signals encountered in practical applications. The experimental procedure involves irradiation and NBT stress, and the results reveal insights into the contributions of gate oxide charge and interface traps to threshold voltage shifts. The findings shed light on the reliability of electronic equipment incorporating p-channel power VDMOS transistors under various stress conditions, offering valuable insights for device design and operation.",
publisher = "IEEE : Institute of Electrical and Electronics Engineers",
journal = "MIEL : 33rd International Conference on Microelectronics : Proceedings book",
title = "Effects in Commercial p-Channel Power VDMOS Transistors Initiated by Negative Bias Temperature Stress and Irradiation",
pages = "277-280",
doi = "10.1109/MIEL58498.2023.10315932"
}

Veljković, S., Mitrović, N., Đorić-Veljković, S., Davidović, V., Živanović, E., Stanković, S., Anđelković, M., Ristić, G., Paskleva, A., Spassov, D., Danković, D.,& Manić, I.. (2023). Effects in Commercial p-Channel Power VDMOS Transistors Initiated by Negative Bias Temperature Stress and Irradiation. in MIEL : 33rd International Conference on Microelectronics : Proceedings book
IEEE : Institute of Electrical and Electronics Engineers., 277-280.
https://doi.org/10.1109/MIEL58498.2023.10315932

Veljković S, Mitrović N, Đorić-Veljković S, Davidović V, Živanović E, Stanković S, Anđelković M, Ristić G, Paskleva A, Spassov D, Danković D, Manić I. Effects in Commercial p-Channel Power VDMOS Transistors Initiated by Negative Bias Temperature Stress and Irradiation. in MIEL : 33rd International Conference on Microelectronics : Proceedings book. 2023;:277-280.
doi:10.1109/MIEL58498.2023.10315932 .

Veljković, Sandra, Mitrović, Nikola, Đorić-Veljković, Snežana, Davidović, Vojkan, Živanović, E., Stanković, Srboljub, Anđelković, M., Ristić, G., Paskleva, A., Spassov, D., Danković, Danijel, Manić, I., "Effects in Commercial p-Channel Power VDMOS Transistors Initiated by Negative Bias Temperature Stress and Irradiation" in MIEL : 33rd International Conference on Microelectronics : Proceedings book (2023):277-280,
https://doi.org/10.1109/MIEL58498.2023.10315932 . .

TY  - JOUR
AU  - Pejović, Milić
AU  - Pejović, Svetlana
AU  - Živanović, Miloš
PY  - 2023
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/11367
AB  - The paper analyses the possibility of commercial neon indicator lamp at low pressure application as a gamma radiation detector. The diode is most often used as an indicator in electrical switchers. The analysis was performed on the basis of experimental electrical breakdown time delay data as a function of relaxation time, applied voltage and gamma ray air kerma rate. It has been shown that the indicator can be used as a detector for relaxation time greater than 70 ms. During this time period, a complete recombination/de-excitation of the particles formed during previous breakdown and subsequent self-sustaining discharge, which can further initiate next breakdown, takes place. It was also shown that gamma radiation leads to a significant reduction in electrical breakdown time delay for applied voltages close to indicator breakdown voltage. Based on the behavior of the dependence of the mean value of the electrical breakdown time delay on the gamma ray air kerma rate, it was shown that the indicator can be used very efficiently as a detector up to air kerma rate of 2.3 · 10-5 Gy/h, when the electrical breakdown time delay is measured for applied voltage 10% higher than the breakdown voltage. © 2023 The Author(s).
T2  - Radiation Protection Dosimetry
T1  - Commercial voltage indicator as a gamma radiation detector
VL  - 199
IS  - 10
SP  - 1103
EP  - 1109
DO  - 10.1093/rpd/ncad143
ER  - 

@article{
author = "Pejović, Milić and Pejović, Svetlana and Živanović, Miloš",
year = "2023",
abstract = "The paper analyses the possibility of commercial neon indicator lamp at low pressure application as a gamma radiation detector. The diode is most often used as an indicator in electrical switchers. The analysis was performed on the basis of experimental electrical breakdown time delay data as a function of relaxation time, applied voltage and gamma ray air kerma rate. It has been shown that the indicator can be used as a detector for relaxation time greater than 70 ms. During this time period, a complete recombination/de-excitation of the particles formed during previous breakdown and subsequent self-sustaining discharge, which can further initiate next breakdown, takes place. It was also shown that gamma radiation leads to a significant reduction in electrical breakdown time delay for applied voltages close to indicator breakdown voltage. Based on the behavior of the dependence of the mean value of the electrical breakdown time delay on the gamma ray air kerma rate, it was shown that the indicator can be used very efficiently as a detector up to air kerma rate of 2.3 · 10-5 Gy/h, when the electrical breakdown time delay is measured for applied voltage 10% higher than the breakdown voltage. © 2023 The Author(s).",
journal = "Radiation Protection Dosimetry",
title = "Commercial voltage indicator as a gamma radiation detector",
volume = "199",
number = "10",
pages = "1103-1109",
doi = "10.1093/rpd/ncad143"
}

Pejović, M., Pejović, S.,& Živanović, M.. (2023). Commercial voltage indicator as a gamma radiation detector. in Radiation Protection Dosimetry, 199(10), 1103-1109.
https://doi.org/10.1093/rpd/ncad143

Pejović M, Pejović S, Živanović M. Commercial voltage indicator as a gamma radiation detector. in Radiation Protection Dosimetry. 2023;199(10):1103-1109.
doi:10.1093/rpd/ncad143 .

Pejović, Milić, Pejović, Svetlana, Živanović, Miloš, "Commercial voltage indicator as a gamma radiation detector" in Radiation Protection Dosimetry, 199, no. 10 (2023):1103-1109,
https://doi.org/10.1093/rpd/ncad143 . .

TY  - JOUR
AU  - Veljković, Sandra
AU  - Mitrović, Nikola
AU  - Davidović, Vojkan
AU  - Golubović, Snežana
AU  - Djorić-Veljković, Snežana
AU  - Paskaleva, Albena
AU  - Spassov, Dencho
AU  - Stanković, Srboljub
AU  - Andjelković, Marko
AU  - Prijić, Zoran
AU  - Manić, Ivica
AU  - Prijić, Aneta
AU  - Ristić, Goran
AU  - Danković, Danijel
PY  - 2022
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12130
AB  - n this paper, the e®ects of successively applied static/pulsed negative bias temperature (NBT)stress and irradiation on commercial p-channel power vertical double-di®used metal-oxidesemiconductor (VDMOS) transistors are investigated. To further illustrate the impacts of thesestresses on the power devices, the relative contributions of gate oxide charge (Not) and interfacetraps (Nit) to threshold voltage shifts are shown and studied. It was shown that when irradi-ation without gate voltage is used, the duration of the pre-irradiation static NBT stress has aslightly larger e®ect on the radiation response of power VDMOS transistors. Regarding the factthat the investigated components are more likely to function in the dynamic mode than thestatic mode in practice, additional analysis was focused on the results obtained during thepulsed NBT stress after irradiation. For the components subjected to the pulsed NBT stressafter the irradiation, the e®ects ofNotneutralization andNitpassivation (usually related toannealing) are more enhanced than the components subjected to the static NBT stress, becauseonly a high temperature is applied during the pulse-o® state. It was observed that in devicespreviously irradiated with gate voltage applied, the decrease of threshold voltage shift is sig-ni ̄cantly greater during the pulsed NBT stress than during the static NBT stress
T2  - Journal of Circuits, Systems and Computers
T1  - Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress
VL  - 31
IS  - 18
SP  - 2240003
DO  - 10.1142/S0218126622400035
ER  - 

@article{
author = "Veljković, Sandra and Mitrović, Nikola and Davidović, Vojkan and Golubović, Snežana and Djorić-Veljković, Snežana and Paskaleva, Albena and Spassov, Dencho and Stanković, Srboljub and Andjelković, Marko and Prijić, Zoran and Manić, Ivica and Prijić, Aneta and Ristić, Goran and Danković, Danijel",
year = "2022",
abstract = "n this paper, the e®ects of successively applied static/pulsed negative bias temperature (NBT)stress and irradiation on commercial p-channel power vertical double-di®used metal-oxidesemiconductor (VDMOS) transistors are investigated. To further illustrate the impacts of thesestresses on the power devices, the relative contributions of gate oxide charge (Not) and interfacetraps (Nit) to threshold voltage shifts are shown and studied. It was shown that when irradi-ation without gate voltage is used, the duration of the pre-irradiation static NBT stress has aslightly larger e®ect on the radiation response of power VDMOS transistors. Regarding the factthat the investigated components are more likely to function in the dynamic mode than thestatic mode in practice, additional analysis was focused on the results obtained during thepulsed NBT stress after irradiation. For the components subjected to the pulsed NBT stressafter the irradiation, the e®ects ofNotneutralization andNitpassivation (usually related toannealing) are more enhanced than the components subjected to the static NBT stress, becauseonly a high temperature is applied during the pulse-o® state. It was observed that in devicespreviously irradiated with gate voltage applied, the decrease of threshold voltage shift is sig-ni ̄cantly greater during the pulsed NBT stress than during the static NBT stress",
journal = "Journal of Circuits, Systems and Computers",
title = "Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress",
volume = "31",
number = "18",
pages = "2240003",
doi = "10.1142/S0218126622400035"
}

Veljković, S., Mitrović, N., Davidović, V., Golubović, S., Djorić-Veljković, S., Paskaleva, A., Spassov, D., Stanković, S., Andjelković, M., Prijić, Z., Manić, I., Prijić, A., Ristić, G.,& Danković, D.. (2022). Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress. in Journal of Circuits, Systems and Computers, 31(18), 2240003.
https://doi.org/10.1142/S0218126622400035

Veljković S, Mitrović N, Davidović V, Golubović S, Djorić-Veljković S, Paskaleva A, Spassov D, Stanković S, Andjelković M, Prijić Z, Manić I, Prijić A, Ristić G, Danković D. Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress. in Journal of Circuits, Systems and Computers. 2022;31(18):2240003.
doi:10.1142/S0218126622400035 .

Veljković, Sandra, Mitrović, Nikola, Davidović, Vojkan, Golubović, Snežana, Djorić-Veljković, Snežana, Paskaleva, Albena, Spassov, Dencho, Stanković, Srboljub, Andjelković, Marko, Prijić, Zoran, Manić, Ivica, Prijić, Aneta, Ristić, Goran, Danković, Danijel, "Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress" in Journal of Circuits, Systems and Computers, 31, no. 18 (2022):2240003,
https://doi.org/10.1142/S0218126622400035 . .