Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress
Аутори
Veljković, SandraMitrović, Nikola
Davidović, Vojkan
Golubović, Snežana
Djorić-Veljković, Snežana
Paskaleva, Albena
Spassov, Dencho
Stanković, Srboljub
Andjelković, Marko
Prijić, Zoran
Manić, Ivica
Prijić, Aneta
Ristić, Goran
Danković, Danijel
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
n this paper, the e®ects of successively applied static/pulsed negative bias temperature (NBT)stress and irradiation on commercial p-channel power vertical double-di®used metal-oxidesemiconductor (VDMOS) transistors are investigated. To further illustrate the impacts of thesestresses on the power devices, the relative contributions of gate oxide charge (Not) and interfacetraps (Nit) to threshold voltage shifts are shown and studied. It was shown that when irradi-ation without gate voltage is used, the duration of the pre-irradiation static NBT stress has aslightly larger e®ect on the radiation response of power VDMOS transistors. Regarding the factthat the investigated components are more likely to function in the dynamic mode than thestatic mode in practice, additional analysis was focused on the results obtained during thepulsed NBT stress after irradiation. For the components subjected to the pulsed NBT stressafter the irradiation, the e®ects ofNotneutralization andNitpassivation (u...sually related toannealing) are more enhanced than the components subjected to the static NBT stress, becauseonly a high temperature is applied during the pulse-o® state. It was observed that in devicespreviously irradiated with gate voltage applied, the decrease of threshold voltage shift is sig-ni ̄cantly greater during the pulsed NBT stress than during the static NBT stress
Кључне речи:
VDMOS transistors / irradiation / pulsed NBT stress / static NBT stressИзвор:
Journal of Circuits, Systems and Computers, 2022, 31, 18, 2240003-Финансирање / пројекти:
- ELICSIR - Enhancement of Sceintific Excellence and Innovation Potential in Electronic Instrumentation for Ionising Radiation Environments (EU-H2020-857558)
- Министарство науке, технолошког развоја и иновација Републике Србије, институционално финансирање - 200102 (Универзитет у Нишу, Електронски факултет) (RS-MESTD-inst-2020-200102)
DOI: 10.1142/S0218126622400035
ISSN: 0218-1266
WoS: 00084943230000
Scopus: 2-s2.0-85134418477
Колекције
Институција/група
VinčaTY - JOUR AU - Veljković, Sandra AU - Mitrović, Nikola AU - Davidović, Vojkan AU - Golubović, Snežana AU - Djorić-Veljković, Snežana AU - Paskaleva, Albena AU - Spassov, Dencho AU - Stanković, Srboljub AU - Andjelković, Marko AU - Prijić, Zoran AU - Manić, Ivica AU - Prijić, Aneta AU - Ristić, Goran AU - Danković, Danijel PY - 2022 UR - https://vinar.vin.bg.ac.rs/handle/123456789/12130 AB - n this paper, the e®ects of successively applied static/pulsed negative bias temperature (NBT)stress and irradiation on commercial p-channel power vertical double-di®used metal-oxidesemiconductor (VDMOS) transistors are investigated. To further illustrate the impacts of thesestresses on the power devices, the relative contributions of gate oxide charge (Not) and interfacetraps (Nit) to threshold voltage shifts are shown and studied. It was shown that when irradi-ation without gate voltage is used, the duration of the pre-irradiation static NBT stress has aslightly larger e®ect on the radiation response of power VDMOS transistors. Regarding the factthat the investigated components are more likely to function in the dynamic mode than thestatic mode in practice, additional analysis was focused on the results obtained during thepulsed NBT stress after irradiation. For the components subjected to the pulsed NBT stressafter the irradiation, the e®ects ofNotneutralization andNitpassivation (usually related toannealing) are more enhanced than the components subjected to the static NBT stress, becauseonly a high temperature is applied during the pulse-o® state. It was observed that in devicespreviously irradiated with gate voltage applied, the decrease of threshold voltage shift is sig-ni ̄cantly greater during the pulsed NBT stress than during the static NBT stress T2 - Journal of Circuits, Systems and Computers T1 - Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress VL - 31 IS - 18 SP - 2240003 DO - 10.1142/S0218126622400035 ER -
@article{ author = "Veljković, Sandra and Mitrović, Nikola and Davidović, Vojkan and Golubović, Snežana and Djorić-Veljković, Snežana and Paskaleva, Albena and Spassov, Dencho and Stanković, Srboljub and Andjelković, Marko and Prijić, Zoran and Manić, Ivica and Prijić, Aneta and Ristić, Goran and Danković, Danijel", year = "2022", abstract = "n this paper, the e®ects of successively applied static/pulsed negative bias temperature (NBT)stress and irradiation on commercial p-channel power vertical double-di®used metal-oxidesemiconductor (VDMOS) transistors are investigated. To further illustrate the impacts of thesestresses on the power devices, the relative contributions of gate oxide charge (Not) and interfacetraps (Nit) to threshold voltage shifts are shown and studied. It was shown that when irradi-ation without gate voltage is used, the duration of the pre-irradiation static NBT stress has aslightly larger e®ect on the radiation response of power VDMOS transistors. Regarding the factthat the investigated components are more likely to function in the dynamic mode than thestatic mode in practice, additional analysis was focused on the results obtained during thepulsed NBT stress after irradiation. For the components subjected to the pulsed NBT stressafter the irradiation, the e®ects ofNotneutralization andNitpassivation (usually related toannealing) are more enhanced than the components subjected to the static NBT stress, becauseonly a high temperature is applied during the pulse-o® state. It was observed that in devicespreviously irradiated with gate voltage applied, the decrease of threshold voltage shift is sig-ni ̄cantly greater during the pulsed NBT stress than during the static NBT stress", journal = "Journal of Circuits, Systems and Computers", title = "Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress", volume = "31", number = "18", pages = "2240003", doi = "10.1142/S0218126622400035" }
Veljković, S., Mitrović, N., Davidović, V., Golubović, S., Djorić-Veljković, S., Paskaleva, A., Spassov, D., Stanković, S., Andjelković, M., Prijić, Z., Manić, I., Prijić, A., Ristić, G.,& Danković, D.. (2022). Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress. in Journal of Circuits, Systems and Computers, 31(18), 2240003. https://doi.org/10.1142/S0218126622400035
Veljković S, Mitrović N, Davidović V, Golubović S, Djorić-Veljković S, Paskaleva A, Spassov D, Stanković S, Andjelković M, Prijić Z, Manić I, Prijić A, Ristić G, Danković D. Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress. in Journal of Circuits, Systems and Computers. 2022;31(18):2240003. doi:10.1142/S0218126622400035 .
Veljković, Sandra, Mitrović, Nikola, Davidović, Vojkan, Golubović, Snežana, Djorić-Veljković, Snežana, Paskaleva, Albena, Spassov, Dencho, Stanković, Srboljub, Andjelković, Marko, Prijić, Zoran, Manić, Ivica, Prijić, Aneta, Ristić, Goran, Danković, Danijel, "Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress" in Journal of Circuits, Systems and Computers, 31, no. 18 (2022):2240003, https://doi.org/10.1142/S0218126622400035 . .