TY  - JOUR
AU  - Milosavljević, Momir
AU  - Stojanovic, N.
AU  - Peruško, Davor
AU  - Timotijević, B.
AU  - Toprek, Dragan
AU  - Kovač, Janez
AU  - Dražić, Goran
AU  - Jeynes, C.
PY  - 2012
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/4631
AB  - Interactions induced in Al/Ti multilayers by implantation of Ar ions at room temperature were investgated. Initial structures consisted of (Al/Ti) x 5 multilayers deposited by d.c. ion sputtering on Si(1 0 0) wafers, to a total thickness of similar to 250 nm. They were irradiated with 200 keV Ar+ ions, to the fluences from 5 x 10(15) to 4 x 10(16) ions/cm(2). It was found that ion irradiation induced a progressed intermixing of the multilayer constituents and Al-Ti nanoalloying for the highest applied fluence. The resulting nanocrystalline structure had a graded composition with non-reacted or interdiffused Al and Ti, and gamma-AlTi and AlTi3 intermetallic phases. Most intense reactivity was observed around mid depth of the multilayers, where most energy was deposited by the impact ions. It is presumed that Al-Ti chemical reaction is triggered by thermal spikes and further enhanced by chemical driving forces. The applied processing can be interesting for fabrication of tightly bond multilayered structures with gradual changes of their composition and properties. (C) 2011 Elsevier B. V. All rights reserved.
T2  - Applied Surface Science
T1  - Ion irradiation induced Al-Ti interaction in nano-scaled Al/Ti multilayers
VL  - 258
IS  - 6
SP  - 2043
EP  - 2046
DO  - 10.1016/j.apsusc.2011.04.107
ER  - 

@article{
author = "Milosavljević, Momir and Stojanovic, N. and Peruško, Davor and Timotijević, B. and Toprek, Dragan and Kovač, Janez and Dražić, Goran and Jeynes, C.",
year = "2012",
abstract = "Interactions induced in Al/Ti multilayers by implantation of Ar ions at room temperature were investgated. Initial structures consisted of (Al/Ti) x 5 multilayers deposited by d.c. ion sputtering on Si(1 0 0) wafers, to a total thickness of similar to 250 nm. They were irradiated with 200 keV Ar+ ions, to the fluences from 5 x 10(15) to 4 x 10(16) ions/cm(2). It was found that ion irradiation induced a progressed intermixing of the multilayer constituents and Al-Ti nanoalloying for the highest applied fluence. The resulting nanocrystalline structure had a graded composition with non-reacted or interdiffused Al and Ti, and gamma-AlTi and AlTi3 intermetallic phases. Most intense reactivity was observed around mid depth of the multilayers, where most energy was deposited by the impact ions. It is presumed that Al-Ti chemical reaction is triggered by thermal spikes and further enhanced by chemical driving forces. The applied processing can be interesting for fabrication of tightly bond multilayered structures with gradual changes of their composition and properties. (C) 2011 Elsevier B. V. All rights reserved.",
journal = "Applied Surface Science",
title = "Ion irradiation induced Al-Ti interaction in nano-scaled Al/Ti multilayers",
volume = "258",
number = "6",
pages = "2043-2046",
doi = "10.1016/j.apsusc.2011.04.107"
}

Milosavljević, M., Stojanovic, N., Peruško, D., Timotijević, B., Toprek, D., Kovač, J., Dražić, G.,& Jeynes, C.. (2012). Ion irradiation induced Al-Ti interaction in nano-scaled Al/Ti multilayers. in Applied Surface Science, 258(6), 2043-2046.
https://doi.org/10.1016/j.apsusc.2011.04.107

Milosavljević M, Stojanovic N, Peruško D, Timotijević B, Toprek D, Kovač J, Dražić G, Jeynes C. Ion irradiation induced Al-Ti interaction in nano-scaled Al/Ti multilayers. in Applied Surface Science. 2012;258(6):2043-2046.
doi:10.1016/j.apsusc.2011.04.107 .

Milosavljević, Momir, Stojanovic, N., Peruško, Davor, Timotijević, B., Toprek, Dragan, Kovač, Janez, Dražić, Goran, Jeynes, C., "Ion irradiation induced Al-Ti interaction in nano-scaled Al/Ti multilayers" in Applied Surface Science, 258, no. 6 (2012):2043-2046,
https://doi.org/10.1016/j.apsusc.2011.04.107 . .

TY  - JOUR
AU  - Peruško, Davor
AU  - Webb, M. J.
AU  - Milinović, Velimir
AU  - Timotijević, B.
AU  - Miosavljevic, M.
AU  - Jeynes, C.
AU  - Webb, R. P.
PY  - 2008
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6762
AB  - A comparative study of the structural changes induced in Al/Ti and AlN/TiN multilayers by argon ion irradiation is presented. The layers were deposited on Si substrates, by ion sputtering in case of pure metals, and reactive ion sputtering in case of metal-nitrides, to a total thickness of similar to 270 nm. The multilayered structures consisted of 10 alternative similar to 27 nm layers of each component. For ion irradiation, we used 200 keV Ar+ ions having a projected range around mid-depth of the multilayered structures. Implantations were performed at room temperature, to the fluences from 5 x 10(15) to 4 x 10(16) ions/cm(2). Structural characterization included Rutherford backscattering analysis and transmission electron microscopy. The obtained results demonstrate that AlN/TiN multilayered system exhibits a much higher irradiation stability compared to the Al/Ti system. In Al/Ti multilayers, we observe a progressed intermixing with increasing the ion fluence, the behavior being closer to the ballistic than to the thermal spike model. In AlN/TiN system, no interface mixing was registered for any of the applied irradiation fluencies. Different behavior compared to Al/Ti system is assigned to immiscibility of AlN and TiN. (C) 2008 Elsevier B.V. All rights reserved.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - On the ion irradiation stability of Al/Ti versus AlN/TiN multilayers
VL  - 266
IS  - 8
SP  - 1749
EP  - 1753
DO  - 10.1016/j.nimb.2008.02.034
ER  - 

@article{
author = "Peruško, Davor and Webb, M. J. and Milinović, Velimir and Timotijević, B. and Miosavljevic, M. and Jeynes, C. and Webb, R. P.",
year = "2008",
abstract = "A comparative study of the structural changes induced in Al/Ti and AlN/TiN multilayers by argon ion irradiation is presented. The layers were deposited on Si substrates, by ion sputtering in case of pure metals, and reactive ion sputtering in case of metal-nitrides, to a total thickness of similar to 270 nm. The multilayered structures consisted of 10 alternative similar to 27 nm layers of each component. For ion irradiation, we used 200 keV Ar+ ions having a projected range around mid-depth of the multilayered structures. Implantations were performed at room temperature, to the fluences from 5 x 10(15) to 4 x 10(16) ions/cm(2). Structural characterization included Rutherford backscattering analysis and transmission electron microscopy. The obtained results demonstrate that AlN/TiN multilayered system exhibits a much higher irradiation stability compared to the Al/Ti system. In Al/Ti multilayers, we observe a progressed intermixing with increasing the ion fluence, the behavior being closer to the ballistic than to the thermal spike model. In AlN/TiN system, no interface mixing was registered for any of the applied irradiation fluencies. Different behavior compared to Al/Ti system is assigned to immiscibility of AlN and TiN. (C) 2008 Elsevier B.V. All rights reserved.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "On the ion irradiation stability of Al/Ti versus AlN/TiN multilayers",
volume = "266",
number = "8",
pages = "1749-1753",
doi = "10.1016/j.nimb.2008.02.034"
}

Peruško, D., Webb, M. J., Milinović, V., Timotijević, B., Miosavljevic, M., Jeynes, C.,& Webb, R. P.. (2008). On the ion irradiation stability of Al/Ti versus AlN/TiN multilayers. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 266(8), 1749-1753.
https://doi.org/10.1016/j.nimb.2008.02.034

Peruško D, Webb MJ, Milinović V, Timotijević B, Miosavljevic M, Jeynes C, Webb RP. On the ion irradiation stability of Al/Ti versus AlN/TiN multilayers. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2008;266(8):1749-1753.
doi:10.1016/j.nimb.2008.02.034 .

Peruško, Davor, Webb, M. J., Milinović, Velimir, Timotijević, B., Miosavljevic, M., Jeynes, C., Webb, R. P., "On the ion irradiation stability of Al/Ti versus AlN/TiN multilayers" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 266, no. 8 (2008):1749-1753,
https://doi.org/10.1016/j.nimb.2008.02.034 . .

TY  - JOUR
AU  - Peruško, Davor
AU  - Milosavljević, Momir
AU  - Milinović, Velimir
AU  - Timotijević, B.
AU  - Zalar, A.
AU  - Kovač, Janez
AU  - Pracek, B.
AU  - Jeynes, C.
PY  - 2008
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6768
AB  - We have studied the effects of high fluence nitrogen ion implantation on the structural changes in Al/Ti multilayers, with the aim of achieving multilayered metal-nitrides. The starting structures consisted of 10 alternate sputter-deposited Al and Ti films, with a total thickness of 270 nm, on (100) Si substrates. They were implanted with 200 keV N-2(+), to 1 x 10(17) and 2 x 10(17) at/cm(2), the projected range being around half-depth of the multilayers. Structural characterization was performed by Rutherford backscattering, Auger electron spectroscopy and transmission electron microscopy. It was found that ion implantation to the higher fluence induces a full intermixing of Al/Ti layers, resulting in a multilayered structure with different content of Al, Ti and N. The applied method can be interesting for preparation of graded (AI,Ti)N multilayers, with a controlled content of nitrogen and a controlled level of Al-Ti intermixing within the structures. (C) 2008 Elsevier B.V. All rights reserved.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - High fluence nitrogen implantation in Al/Ti multilayers
VL  - 266
IS  - 10
SP  - 2503
EP  - 2506
DO  - 10.1016/j.nimb.2008.03.034
ER  - 

@article{
author = "Peruško, Davor and Milosavljević, Momir and Milinović, Velimir and Timotijević, B. and Zalar, A. and Kovač, Janez and Pracek, B. and Jeynes, C.",
year = "2008",
abstract = "We have studied the effects of high fluence nitrogen ion implantation on the structural changes in Al/Ti multilayers, with the aim of achieving multilayered metal-nitrides. The starting structures consisted of 10 alternate sputter-deposited Al and Ti films, with a total thickness of 270 nm, on (100) Si substrates. They were implanted with 200 keV N-2(+), to 1 x 10(17) and 2 x 10(17) at/cm(2), the projected range being around half-depth of the multilayers. Structural characterization was performed by Rutherford backscattering, Auger electron spectroscopy and transmission electron microscopy. It was found that ion implantation to the higher fluence induces a full intermixing of Al/Ti layers, resulting in a multilayered structure with different content of Al, Ti and N. The applied method can be interesting for preparation of graded (AI,Ti)N multilayers, with a controlled content of nitrogen and a controlled level of Al-Ti intermixing within the structures. (C) 2008 Elsevier B.V. All rights reserved.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "High fluence nitrogen implantation in Al/Ti multilayers",
volume = "266",
number = "10",
pages = "2503-2506",
doi = "10.1016/j.nimb.2008.03.034"
}

Peruško, D., Milosavljević, M., Milinović, V., Timotijević, B., Zalar, A., Kovač, J., Pracek, B.,& Jeynes, C.. (2008). High fluence nitrogen implantation in Al/Ti multilayers. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 266(10), 2503-2506.
https://doi.org/10.1016/j.nimb.2008.03.034

Peruško D, Milosavljević M, Milinović V, Timotijević B, Zalar A, Kovač J, Pracek B, Jeynes C. High fluence nitrogen implantation in Al/Ti multilayers. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2008;266(10):2503-2506.
doi:10.1016/j.nimb.2008.03.034 .

Peruško, Davor, Milosavljević, Momir, Milinović, Velimir, Timotijević, B., Zalar, A., Kovač, Janez, Pracek, B., Jeynes, C., "High fluence nitrogen implantation in Al/Ti multilayers" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 266, no. 10 (2008):2503-2506,
https://doi.org/10.1016/j.nimb.2008.03.034 . .

TY  - JOUR
AU  - Popović, Maja
AU  - Stojanović, Milan
AU  - Peruško, Davor
AU  - Novaković, Mirjana M.
AU  - Radović, Ivan
AU  - Milinović, Velimir
AU  - Timotijević, B.
AU  - Mitrić, Miodrag
AU  - Milosavljević, Momir
PY  - 2008
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6769
AB  - A study of ion beam modification of structural and electrical properties of TiN thin films is presented. The layers were deposited by reactive ion sputtering on (100) Si and glass slide substrates to a thickness of similar to 240 nm. After deposition the structures were implanted with argon ions at 120 keV, to the fluences from 1 x 10(15) to 1 x 10(16) ions/cm(2). The ion energy was chosen to give the projected ion range within the deposited layers, to minimize the influence of the substrate on the induced structural changes. Structural analysis of the samples was performed by cross-sectional transmission electron microscopy, X-ray diffraction and Rutherford backscattering spectrometry. Electrical characterization included sheet resistivity measurements with a four point probe. It was found that the as-deposited layers have columnar structure, individual columns stretching from the substrate to the surface and being a few tens of nanometers wide.Ion irradiation rearranges their crystalline structure, which remains polycrystalline, but the columns are broken, and nanocrystals of the same phase are formed. The structural changes can be nicely correlated to the measured electrical resistivity. (C) 2008 Elsevier B.V. All rights reserved.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Ion beam modification of structural and electrical properties of TiN thin films
VL  - 266
IS  - 10
SP  - 2507
EP  - 2510
DO  - 10.1016/j.nimb.2008.03.032
ER  - 

@article{
author = "Popović, Maja and Stojanović, Milan and Peruško, Davor and Novaković, Mirjana M. and Radović, Ivan and Milinović, Velimir and Timotijević, B. and Mitrić, Miodrag and Milosavljević, Momir",
year = "2008",
abstract = "A study of ion beam modification of structural and electrical properties of TiN thin films is presented. The layers were deposited by reactive ion sputtering on (100) Si and glass slide substrates to a thickness of similar to 240 nm. After deposition the structures were implanted with argon ions at 120 keV, to the fluences from 1 x 10(15) to 1 x 10(16) ions/cm(2). The ion energy was chosen to give the projected ion range within the deposited layers, to minimize the influence of the substrate on the induced structural changes. Structural analysis of the samples was performed by cross-sectional transmission electron microscopy, X-ray diffraction and Rutherford backscattering spectrometry. Electrical characterization included sheet resistivity measurements with a four point probe. It was found that the as-deposited layers have columnar structure, individual columns stretching from the substrate to the surface and being a few tens of nanometers wide.Ion irradiation rearranges their crystalline structure, which remains polycrystalline, but the columns are broken, and nanocrystals of the same phase are formed. The structural changes can be nicely correlated to the measured electrical resistivity. (C) 2008 Elsevier B.V. All rights reserved.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Ion beam modification of structural and electrical properties of TiN thin films",
volume = "266",
number = "10",
pages = "2507-2510",
doi = "10.1016/j.nimb.2008.03.032"
}

Popović, M., Stojanović, M., Peruško, D., Novaković, M. M., Radović, I., Milinović, V., Timotijević, B., Mitrić, M.,& Milosavljević, M.. (2008). Ion beam modification of structural and electrical properties of TiN thin films. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 266(10), 2507-2510.
https://doi.org/10.1016/j.nimb.2008.03.032

Popović M, Stojanović M, Peruško D, Novaković MM, Radović I, Milinović V, Timotijević B, Mitrić M, Milosavljević M. Ion beam modification of structural and electrical properties of TiN thin films. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2008;266(10):2507-2510.
doi:10.1016/j.nimb.2008.03.032 .

Popović, Maja, Stojanović, Milan, Peruško, Davor, Novaković, Mirjana M., Radović, Ivan, Milinović, Velimir, Timotijević, B., Mitrić, Miodrag, Milosavljević, Momir, "Ion beam modification of structural and electrical properties of TiN thin films" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 266, no. 10 (2008):2507-2510,
https://doi.org/10.1016/j.nimb.2008.03.032 . .