Miletić, Vedran

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  • Miletić, Vedran (1)
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Development and comparison of the techniques for solving the inverse problem in photoacoustic characterization of semiconductors

Nešić, Mioljub; Popović, Marica; Đorđević, Katarina; Miletić, Vedran; Jordović-Pavlović, Miroslava; Markushev, Dragan; Galović, Slobodanka

(2021)

TY  - JOUR
AU  - Nešić, Mioljub
AU  - Popović, Marica
AU  - Đorđević, Katarina
AU  - Miletić, Vedran
AU  - Jordović-Pavlović, Miroslava
AU  - Markushev, Dragan
AU  - Galović, Slobodanka
PY  - 2021
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/11865
AB  - In this work, theoretically/mathematically simulated (TMS) model is presented for the photoacoustic (PA) frequency response of a semiconductor in a minimum volume PA cell. By analyzing of the TMS model, the infuences of thermal difusivity and linear coefcient of thermal expansion on silicon sample PA frequency response were investigated and two methods were developed for their estimation. The frst one is a self consistent inverse procedure for solving the exponential problems of mathematical physics, based on regression. The second one, a well trained three-layer perceptron with back propagation, based upon theory of artifcial neural networks, is developed and presented. These two inverse problem solving concepts are applied to thermo-elastic characterization of silicon, compared and discussed in the domain of semiconductor characterization.
T2  - Optical and Quantum Electronics
T1  - Development and comparison of the techniques for solving the inverse problem in photoacoustic characterization of semiconductors
VL  - 53
IS  - 7
DO  - 10.1007/s11082-021-02958-0
ER  - 
@article{
author = "Nešić, Mioljub and Popović, Marica and Đorđević, Katarina and Miletić, Vedran and Jordović-Pavlović, Miroslava and Markushev, Dragan and Galović, Slobodanka",
year = "2021",
abstract = "In this work, theoretically/mathematically simulated (TMS) model is presented for the photoacoustic (PA) frequency response of a semiconductor in a minimum volume PA cell. By analyzing of the TMS model, the infuences of thermal difusivity and linear coefcient of thermal expansion on silicon sample PA frequency response were investigated and two methods were developed for their estimation. The frst one is a self consistent inverse procedure for solving the exponential problems of mathematical physics, based on regression. The second one, a well trained three-layer perceptron with back propagation, based upon theory of artifcial neural networks, is developed and presented. These two inverse problem solving concepts are applied to thermo-elastic characterization of silicon, compared and discussed in the domain of semiconductor characterization.",
journal = "Optical and Quantum Electronics",
title = "Development and comparison of the techniques for solving the inverse problem in photoacoustic characterization of semiconductors",
volume = "53",
number = "7",
doi = "10.1007/s11082-021-02958-0"
}
Nešić, M., Popović, M., Đorđević, K., Miletić, V., Jordović-Pavlović, M., Markushev, D.,& Galović, S.. (2021). Development and comparison of the techniques for solving the inverse problem in photoacoustic characterization of semiconductors. in Optical and Quantum Electronics, 53(7).
https://doi.org/10.1007/s11082-021-02958-0
Nešić M, Popović M, Đorđević K, Miletić V, Jordović-Pavlović M, Markushev D, Galović S. Development and comparison of the techniques for solving the inverse problem in photoacoustic characterization of semiconductors. in Optical and Quantum Electronics. 2021;53(7).
doi:10.1007/s11082-021-02958-0 .
Nešić, Mioljub, Popović, Marica, Đorđević, Katarina, Miletić, Vedran, Jordović-Pavlović, Miroslava, Markushev, Dragan, Galović, Slobodanka, "Development and comparison of the techniques for solving the inverse problem in photoacoustic characterization of semiconductors" in Optical and Quantum Electronics, 53, no. 7 (2021),
https://doi.org/10.1007/s11082-021-02958-0 . .
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