TY  - JOUR
AU  - Atić, Aleksandar
AU  - Wang, Xizhe
AU  - Vuković, Nikola
AU  - Stanojević, Novak
AU  - Demić, Aleksandar
AU  - Indjin, Dragan
AU  - Radovanović, Jelena
PY  - 2024
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12868
AB  - ZnO-based heterostructures are up-and-coming candidates for terahertz (THz) optoelectronic devices, largely owing to their innate material attributes. The significant ZnO LO-phonon energy plays a pivotal role in mitigating thermally induced LO-phonon scattering, potentially significantly elevating the temperature performance of quantum cascade lasers (QCLs). In this work, we calculate the electronic structure and absorption of ZnO/ZnMgO multiple semiconductor quantum wells (MQWs) and the current density–voltage characteristics of nonpolar m-plane ZnO/ZnMgO double-barrier resonant tunnelling diodes (RTDs). Both MQWs and RTDs are considered here as two building blocks of a QCL. We show how the doping, Mg percentage and layer thickness affect the absorption of MQWs at room temperature. We confirm that in the high doping concentrations regime, a full quantum treatment that includes the depolarisation shift effect must be considered, as it shifts mid-infrared absorption peak energy for several tens of meV. Furthermore, we also focus on the performance of RTDs for various parameter changes and conclude that, to maximise the peak-to-valley ratio (PVR), the optimal doping density of the analysed ZnO/Zn88Mg12O double-barrier RTD should be approximately 1018 cm−3, whilst the optimal barrier thickness should be 1.3 nm, with a Mg mole fraction of ~9%.
T2  - Materials
T1  - Resonant Tunnelling and Intersubband Optical Properties of ZnO/ZnMgO Semiconductor Heterostructures: Impact of Doping and Layer Structure Variation
VL  - 17
IS  - 4
SP  - 927
DO  - 10.3390/ma17040927
ER  - 

@article{
author = "Atić, Aleksandar and Wang, Xizhe and Vuković, Nikola and Stanojević, Novak and Demić, Aleksandar and Indjin, Dragan and Radovanović, Jelena",
year = "2024",
abstract = "ZnO-based heterostructures are up-and-coming candidates for terahertz (THz) optoelectronic devices, largely owing to their innate material attributes. The significant ZnO LO-phonon energy plays a pivotal role in mitigating thermally induced LO-phonon scattering, potentially significantly elevating the temperature performance of quantum cascade lasers (QCLs). In this work, we calculate the electronic structure and absorption of ZnO/ZnMgO multiple semiconductor quantum wells (MQWs) and the current density–voltage characteristics of nonpolar m-plane ZnO/ZnMgO double-barrier resonant tunnelling diodes (RTDs). Both MQWs and RTDs are considered here as two building blocks of a QCL. We show how the doping, Mg percentage and layer thickness affect the absorption of MQWs at room temperature. We confirm that in the high doping concentrations regime, a full quantum treatment that includes the depolarisation shift effect must be considered, as it shifts mid-infrared absorption peak energy for several tens of meV. Furthermore, we also focus on the performance of RTDs for various parameter changes and conclude that, to maximise the peak-to-valley ratio (PVR), the optimal doping density of the analysed ZnO/Zn88Mg12O double-barrier RTD should be approximately 1018 cm−3, whilst the optimal barrier thickness should be 1.3 nm, with a Mg mole fraction of ~9%.",
journal = "Materials",
title = "Resonant Tunnelling and Intersubband Optical Properties of ZnO/ZnMgO Semiconductor Heterostructures: Impact of Doping and Layer Structure Variation",
volume = "17",
number = "4",
pages = "927",
doi = "10.3390/ma17040927"
}

Atić, A., Wang, X., Vuković, N., Stanojević, N., Demić, A., Indjin, D.,& Radovanović, J.. (2024). Resonant Tunnelling and Intersubband Optical Properties of ZnO/ZnMgO Semiconductor Heterostructures: Impact of Doping and Layer Structure Variation. in Materials, 17(4), 927.
https://doi.org/10.3390/ma17040927

Atić A, Wang X, Vuković N, Stanojević N, Demić A, Indjin D, Radovanović J. Resonant Tunnelling and Intersubband Optical Properties of ZnO/ZnMgO Semiconductor Heterostructures: Impact of Doping and Layer Structure Variation. in Materials. 2024;17(4):927.
doi:10.3390/ma17040927 .

Atić, Aleksandar, Wang, Xizhe, Vuković, Nikola, Stanojević, Novak, Demić, Aleksandar, Indjin, Dragan, Radovanović, Jelena, "Resonant Tunnelling and Intersubband Optical Properties of ZnO/ZnMgO Semiconductor Heterostructures: Impact of Doping and Layer Structure Variation" in Materials, 17, no. 4 (2024):927,
https://doi.org/10.3390/ma17040927 . .

TY  - JOUR
AU  - Atić, Aleksandar
AU  - Vuković, Nikola N.
AU  - Radovanović, Jelena
PY  - 2022
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/10450
AB  - ZnO based heterostructures have recently received increased research attention, related to the development of room temperature THz/MiR semiconductor devices. The potential for these applications stems from the combination of wide direct bandgap and high exciton binding energy. In this work, we focus on the intersubband transition between bound states in the conduction band, and apply self-consistent numerical modelling to a system of Schrödinger–Poisson equations to evaluate the electronics structure of coupled semiconductor quantum wells. We subsequently analyse the fractional optical absorption at room temperature, as it varies with layers’ thicknesses, doping density and external electric field magnitude.
T2  - Optical and Quantum Electronics
T1  - Calculation of intersubband absorption in ZnO/ZnMgO asymmetric double quantum wells
VL  - 54
IS  - 12
SP  - 810
DO  - 10.1007/s11082-022-04170-0
ER  - 

@article{
author = "Atić, Aleksandar and Vuković, Nikola N. and Radovanović, Jelena",
year = "2022",
abstract = "ZnO based heterostructures have recently received increased research attention, related to the development of room temperature THz/MiR semiconductor devices. The potential for these applications stems from the combination of wide direct bandgap and high exciton binding energy. In this work, we focus on the intersubband transition between bound states in the conduction band, and apply self-consistent numerical modelling to a system of Schrödinger–Poisson equations to evaluate the electronics structure of coupled semiconductor quantum wells. We subsequently analyse the fractional optical absorption at room temperature, as it varies with layers’ thicknesses, doping density and external electric field magnitude.",
journal = "Optical and Quantum Electronics",
title = "Calculation of intersubband absorption in ZnO/ZnMgO asymmetric double quantum wells",
volume = "54",
number = "12",
pages = "810",
doi = "10.1007/s11082-022-04170-0"
}

Atić, A., Vuković, N. N.,& Radovanović, J.. (2022). Calculation of intersubband absorption in ZnO/ZnMgO asymmetric double quantum wells. in Optical and Quantum Electronics, 54(12), 810.
https://doi.org/10.1007/s11082-022-04170-0

Atić A, Vuković NN, Radovanović J. Calculation of intersubband absorption in ZnO/ZnMgO asymmetric double quantum wells. in Optical and Quantum Electronics. 2022;54(12):810.
doi:10.1007/s11082-022-04170-0 .

Atić, Aleksandar, Vuković, Nikola N., Radovanović, Jelena, "Calculation of intersubband absorption in ZnO/ZnMgO asymmetric double quantum wells" in Optical and Quantum Electronics, 54, no. 12 (2022):810,
https://doi.org/10.1007/s11082-022-04170-0 . .