Dragaš, Milica A.

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  • Dragaš, Milica A. (2)
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Author's Bibliography

Influence of thin oxide layer to photoacoustic signal of nano-mechanical structures

Đorđević, Katarina Lj.; Galović, Slobodanka; Dragaš, Milica A.; Markushev, Dragana K.; Markushev, Dragan D.

(Belgrade : Vinča Institute of Nuclear Sciences, 2023)

TY  - CONF
AU  - Đorđević, Katarina Lj.
AU  - Galović, Slobodanka
AU  - Dragaš, Milica A.
AU  - Markushev, Dragana K.
AU  - Markushev, Dragan D.
PY  - 2023
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/11800
AB  - Nano mechanical structures (NEMS) are being developed for application in pressure and temperature sensors. They consist of a very thin oxide layer on a silicon wafer. This layer is placed to improve their sensitivity to pressure changes. In this paper, it was investigated how much this layer affects the physical properties of such structures. In the research, the photoacoustic gas microphone experimental measurement method was applied and neural networks were developed for solving the inverse photoacoustic problem. The obtained results show that controlling the thickness of the oxide layer can be done by engineering the thermal elastic and optical properties of the NEMS.
PB  - Belgrade : Vinča Institute of Nuclear Sciences
C3  - PHOTONICA2023 : 9th International School and Conference on Photonics : book of abstracts; August 28 - September 1, 2023; Belgrade
T1  - Influence of thin oxide layer to photoacoustic signal of nano-mechanical structures
SP  - 38
EP  - 38
UR  - https://hdl.handle.net/21.15107/rcub_vinar_11800
ER  - 
@conference{
author = "Đorđević, Katarina Lj. and Galović, Slobodanka and Dragaš, Milica A. and Markushev, Dragana K. and Markushev, Dragan D.",
year = "2023",
abstract = "Nano mechanical structures (NEMS) are being developed for application in pressure and temperature sensors. They consist of a very thin oxide layer on a silicon wafer. This layer is placed to improve their sensitivity to pressure changes. In this paper, it was investigated how much this layer affects the physical properties of such structures. In the research, the photoacoustic gas microphone experimental measurement method was applied and neural networks were developed for solving the inverse photoacoustic problem. The obtained results show that controlling the thickness of the oxide layer can be done by engineering the thermal elastic and optical properties of the NEMS.",
publisher = "Belgrade : Vinča Institute of Nuclear Sciences",
journal = "PHOTONICA2023 : 9th International School and Conference on Photonics : book of abstracts; August 28 - September 1, 2023; Belgrade",
title = "Influence of thin oxide layer to photoacoustic signal of nano-mechanical structures",
pages = "38-38",
url = "https://hdl.handle.net/21.15107/rcub_vinar_11800"
}
Đorđević, K. Lj., Galović, S., Dragaš, M. A., Markushev, D. K.,& Markushev, D. D.. (2023). Influence of thin oxide layer to photoacoustic signal of nano-mechanical structures. in PHOTONICA2023 : 9th International School and Conference on Photonics : book of abstracts; August 28 - September 1, 2023; Belgrade
Belgrade : Vinča Institute of Nuclear Sciences., 38-38.
https://hdl.handle.net/21.15107/rcub_vinar_11800
Đorđević KL, Galović S, Dragaš MA, Markushev DK, Markushev DD. Influence of thin oxide layer to photoacoustic signal of nano-mechanical structures. in PHOTONICA2023 : 9th International School and Conference on Photonics : book of abstracts; August 28 - September 1, 2023; Belgrade. 2023;:38-38.
https://hdl.handle.net/21.15107/rcub_vinar_11800 .
Đorđević, Katarina Lj., Galović, Slobodanka, Dragaš, Milica A., Markushev, Dragana K., Markushev, Dragan D., "Influence of thin oxide layer to photoacoustic signal of nano-mechanical structures" in PHOTONICA2023 : 9th International School and Conference on Photonics : book of abstracts; August 28 - September 1, 2023; Belgrade (2023):38-38,
https://hdl.handle.net/21.15107/rcub_vinar_11800 .

The photogenerated excess carriers influence on the photoacoustic signal of a narrow bandgap semiconductor

Dragaš, Milica A.; Galović, Slobodanka; Đorđević, Katarina Lj.

(Belgrade : Institute of Technical Sciences of SASA, 2023)

TY  - CONF
AU  - Dragaš, Milica A.
AU  - Galović, Slobodanka
AU  - Đorđević, Katarina Lj.
PY  - 2023
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12311
AB  - In this work, the influence of photogenerated excess carriers on thermodiffusion and thermoelastic mechanisms in the total photoacoustic signal is analyzed. Optically excited ntype silicon with light periodically modulated in the audio range from 20 to 20kHz showed that photogenerated excess carriers, with bulk and surface carrier recombination, lead to creation of slow thermal source (compared to fast source caused by photo-excited phonon) that have effects on thermodiffusion and thermoelastic mechanisms of the total photoacoustic signal at frequencies up to 1kHz, but also cause additional, plasmaelastic bending of semiconductor, which has an influence on the total photoacoustic signal at frequencies greater than 10kHz.
PB  - Belgrade : Institute of Technical Sciences of SASA
C3  - 21st Young Researchers' Conference Materials Sciences and Engineering : program and the book of abstracts
T1  - The photogenerated excess carriers influence on the photoacoustic signal of a narrow bandgap semiconductor
SP  - 36
EP  - 36
UR  - https://hdl.handle.net/21.15107/rcub_vinar_12311
ER  - 
@conference{
author = "Dragaš, Milica A. and Galović, Slobodanka and Đorđević, Katarina Lj.",
year = "2023",
abstract = "In this work, the influence of photogenerated excess carriers on thermodiffusion and thermoelastic mechanisms in the total photoacoustic signal is analyzed. Optically excited ntype silicon with light periodically modulated in the audio range from 20 to 20kHz showed that photogenerated excess carriers, with bulk and surface carrier recombination, lead to creation of slow thermal source (compared to fast source caused by photo-excited phonon) that have effects on thermodiffusion and thermoelastic mechanisms of the total photoacoustic signal at frequencies up to 1kHz, but also cause additional, plasmaelastic bending of semiconductor, which has an influence on the total photoacoustic signal at frequencies greater than 10kHz.",
publisher = "Belgrade : Institute of Technical Sciences of SASA",
journal = "21st Young Researchers' Conference Materials Sciences and Engineering : program and the book of abstracts",
title = "The photogenerated excess carriers influence on the photoacoustic signal of a narrow bandgap semiconductor",
pages = "36-36",
url = "https://hdl.handle.net/21.15107/rcub_vinar_12311"
}
Dragaš, M. A., Galović, S.,& Đorđević, K. Lj.. (2023). The photogenerated excess carriers influence on the photoacoustic signal of a narrow bandgap semiconductor. in 21st Young Researchers' Conference Materials Sciences and Engineering : program and the book of abstracts
Belgrade : Institute of Technical Sciences of SASA., 36-36.
https://hdl.handle.net/21.15107/rcub_vinar_12311
Dragaš MA, Galović S, Đorđević KL. The photogenerated excess carriers influence on the photoacoustic signal of a narrow bandgap semiconductor. in 21st Young Researchers' Conference Materials Sciences and Engineering : program and the book of abstracts. 2023;:36-36.
https://hdl.handle.net/21.15107/rcub_vinar_12311 .
Dragaš, Milica A., Galović, Slobodanka, Đorđević, Katarina Lj., "The photogenerated excess carriers influence on the photoacoustic signal of a narrow bandgap semiconductor" in 21st Young Researchers' Conference Materials Sciences and Engineering : program and the book of abstracts (2023):36-36,
https://hdl.handle.net/21.15107/rcub_vinar_12311 .